A study of the suppression of the high-temperature helium embrittlement in an oxide-particle dispersion strengthened alloy

In this paper, an investigation on the micro-structure of an Fe-base oxide-dispersion-strengthened (ODS) alloy irradiated with high-energy Ne-20 ions to different doses at a temperature around 0.5T(m) (T-m is the melting point of the alloy) is presented. Investigation with the transmission electron microscopy found that the accelerated growth of voids at grain-boundaries, which is usually a concern in conventional Fe-base alloys under conditions of inert-gas implantation, was not observed in the ODS alloy irradiated even to the highest dose (12000 at.ppm Ne). The reason is ascribed to the enhanced recombination of point defects and strong trapping of Ne atoms at the interfaces of the nano-scale oxide particles in grains. The study showed that ODS alloys have good resistance to the high-temperature inter-granular embrittlement due to inert-gas accumulation, exhibiting prominence of application in harsh situations of considerable helium production at elevated temperatures like in a fusion reactor.

Radiation crosslinking of biodegradable poly(butylene succinate) at high temperature

Poly(butylene succinate), (PBS) with different molecular weight was gamma -irradiated at different temperatures and various doses. PBS with high molecular weight and smaller peak area of crystal melting gave the highest gel content at the same temperatures and dose. A two-step irradiation (irradiation in molten state after irradiation at room temperature) gave the highest gel content in different conditions. This is due to the formation of network structure by pre-irradiation at room temperature that leads to less degradation. PBS prepared by two step irradiation was effective for improvement of heat stability because of high gel content formation. Unirradiated PBS sheets broke immediately at 110 degrees, while the irradiated sample (gel fraction, 50%) by a two step-method did not break even up to 200 minutes at 130 degreesC. The PBS sheets are biodegradable even after crosslinking.

HIGH-TEMPERATURE SUPERCONDUCTOR, YBA2CU3O7-X AS ALL-SOLID-STATE LITHIUM CELL

The utility of the high-temperature superconductor, YBa2Cu3O7-x as the cathode material for an all-solid-state lithium cell has been examined. The capacity of YBa2Cu3O7-x is 223 mA h g-1 and the discharge efficiency is > 92%. Measurements of a.c. impedance show that the charge-transfer resistance at the interface of the electrolyte/cathode is very low and increases with the depth-of-discharge of the battery. Studies using X-ray photoelectron spectroscopy (XPS) reveal that the cathode becomes doped with Li+ ions as the cell discharges.

Effect of Rht alleles on the tolerance of wheat grain set to high temperature and drought stress during booting and anthesis

Factorial pot experiments were conducted to compare the responses of GA-sensitive and GA-insensitive reduced height (Rht) alleles in wheat for susceptibility to heat and drought stress during booting and anthesis. Grain set (grains/spikelet) of near isogenic lines (NILs) was assessed following three day transfers to controlled environments imposing day temperatures (t) from 20 to 40°C. Transfers were during booting and/or anthesis and pots maintained at field capacity (FC) or had water withheld. Logistic responses (y = c/1+e-b(t -m)) described declining grain set with increasing t, and t5 was that fitted to give a 5% reduction in grain set. Averaged over NIL, t5 for anthesis at FC was 31.7±0.47°C (S.E.M, 26 d.f.). Drought at anthesis reduced t5 by <2°C. Maintaining FC at booting conferred considerable resistance to high temperatures (t5=33.9°C) but booting was particularly heat susceptible without water (t5 =26.5°C). In one background (cv. Mercia), for NILs varying at the Rht-D1 locus, there was progressive reduction in t5 with dwarfing and reduced gibberellic acid (GA) sensitivity (Rht-D1a, tall, 32.7±0.72; Rht-D1b, semi-dwarf, 29.5±0.85; Rht-D1c, severe dwarf, 24.2±0.72). This trend was not evident for the Rht-B1 locus, or for Rht-D1b in an alternative background (Maris Widgeon). The GA-sensitive severe dwarf Rht12 was more heat tolerant (t5=29.4±0.72) than the similarly statured GA-insensitive Rht-D1c. The GA-sensitive, semi-dwarfing Rht8 conferred greater drought tolerance in one experiment. Despite the effects of Rht-D1 alleles in Mercia on stress tolerance, the inconsistency of the effects over background and locus led to the conclusion that semi-dwarfing with GA-insensitivity did not necessarily increase sensitivity to stress at booting and flowering. In comparison to effects of semi-dwarfing alleles, responses to heat stress are much more dramatically affected by water availability and the precise growth stage at which the stress is experienced by the plants.

Fabrication and evaluation of a skutterudite-based thermoelectric module for high-temperature applications

We report a straightforward methodology for the fabrication of high-temperature thermoelectric (TE) modules using commercially available solder alloys and metal barriers. This methodology employs standard and accessible facilities that are simple to implement in any laboratory. A TE module formed by nine n-type Yb x Co4Sb12 and p-type Ce x Fe3CoSb12 state-of-the-art skutterudite material couples was fabricated. The physical properties of the synthesized skutterudites were determined, and the module power output, internal resistance, and thermocycling stability were evaluated in air. At a temperature difference of 365 K, the module provides more than 1.5 W cm−3 volume power density. However, thermocycling showed an increase of the internal module resistance and degradation in performance with the number of cycles when the device is operated at a hot-side temperature higher than 573 K. This may be attributed to oxidation of the skutterudite thermoelements.

Conductivity mechanism analysis at high temperature in bismuth titanate: A single crystal with sillenite-type structure

Conductivity behavior of the Bi12TiO20 single crystal was investigated by the electric modulus spectroscopy, which was carried out in the frequency range from 5 Hz to 13 MHz and at temperatures higher than 400 degrees C. The resistance curve exhibits a set of properties correlated to a negative temperature coefficient thermistor. In the temperature range investigated, the characteristic parameter (,8) of the thermistor is equal to 4834 degrees C. Temperature coefficients of the resistance (a) were derived being equal to -3.02 x 10(-2) degrees C-1 at 400 degrees C and equal to -9.86 x 10(-3) degrees C-1 at 700 degrees C. The nature of the electric relaxation phenomenon and magnitude dc conductivity are approached. (c) 2005 American Institute of Physics.

Effects of the high-temperature plasma immersion ion-implantation treatment on corrosion behavior of Ti-6Al1-4V

Nitrogen implantation into Ti alloys at higher temperatures improves their mechanical and corrosion resistance properties by forming a thicker nitride layer. In this paper, two different sets of Ti-6Al-4V samples were plasma immersion ion implantation (PIII)-treated using nitrogen plasma, varying the treatment time from 30 to 150 min (800 degrees C) and the process temperature from 400 degrees C to 800 degrees C (t = 60 min). Nanoindentation measurements of the PIII-treated samples at 800 C during 150 min showed the highest hardness value, 24 GPa, which is about four times bigger than untreated sample hardness. The N penetration at these conditions reached approximately 150 nm as analyzed by Auger spectroscopy. on the other hand, the lowest passive current density (3 x 10(-7) A. cm(-2)) was obtained for a PIII-treated sample during 30 min at higher temperature (800 degrees C). The corrosion resistance of this sample is almost the same as for the untreated specimen. Corrosion behavior evidenced that in strong oxidizing media, all PIII-treated samples are more corrosion resistant than the untreated one. PIII processing at higher temperatures promotes smoothing of the sample surface as observed by scanning electron microscopy (SEM). Grazing incidence X-ray diffraction analyses of the untreated samples identified the two typical Ti phases, Ti alpha and Ti beta. After the implantation, Ti2N and TiO2 phases were also detected.

Negative temperature coefficient thermistor based on Bi3Zn2Sb3O14 ceramic: An oxide semiconductor at high temperature

Bi1.5ZnSb1.5O7 dielectric ceramic with pyrochlore structure was investigated by impedance spectroscopy from 400 to 750 degreesC. Pyrochlore was synthesized by the polymeric precursor method, a chemical synthesis route derived from Pechini's method. The grain or bulk resistance exhibits a sensor temperature characteristic, being a thermistor with a negative temperature coefficient (NTC). Only a single region was identified on the resistance curve investigated. The NTC thermistor characteristic parameter (beta) is equal to 7140 degreesC, in the temperature range investigated. The temperature coefficient of the resistance (alpha) was derived, being equal to -4.46x10(-2) degreesC(-1) at 400 degreesC. The conduction mechanism and relaxation are discussed. (C) 2003 American Institute of Physics.

Tolerance to high temperature in F-5 inbred lines of tomato

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Anisotropy in plastic deformation of extruded magnesium alloy sheet during tensile straining at high temperature

Experimental measurements are used to characterize the anisotropy of flow stress in extruded magnesium alloy AZ31 sheet during uniaxial tension tests at temperatures between 350°C and 450°C, and strain rates ranging from 10-5 to 10-2 s-1. The sheet exhibits lower flow stress and higher tensile ductility when loaded with the tensile axis perpendicular to the extrusion direction compared to when it is loaded parallel to the extrusion direction. This anisotropy is found to be grain size, strain rate, and temperature dependent, but is only weakly dependent on texture. A microstructure based model (D. E. Cipoletti, A. F. Bower, P. E. Krajewski, Scr. Mater., 64 (2011) 931–934) is used to explain the origin of the anisotropic behavior. In contrast to room temperature behavior, where anisotropy is principally a consequence of the low resistance to slip on the basal slip system, elevated temperature anisotropy is found to be caused by the grain structure of extruded sheet. The grains are elongated parallel to the extrusion direction, leading to a lower effective grain size perpendicular to the extrusion direction. As a result, grain boundary sliding occurs more readily if the material is loaded perpendicular to the extrusion direction.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

Galvanic Corrosion of High-Temperature Low-Sag (HTLS) High Voltage Conductors: New Materials - New Challenges

High-Temperature Low-Sag (HTLS) high voltage overhead conductors offer higher operating temperatures, reduced resistance and less sag than conventional designs. With up to twice the current capacity for the same diameter conductor, they may help ease the power shortage in the constantly increasing electricity demand, but there might be some concerns about their corrosion resistance. These new conductors use materials relatively new to the power industry, such as advanced carbon fiber polymer matrix composites and unique metal matrix composites/nano-composites predominantly used in aerospace industries. This study has made an initial assessment of potential galvanic corrosion problems in three very different HTLS designs: ACCC (Aluminum Conductor Composite Core), ACCR (Aluminum Conductor Composite Reinforced) and ACSS (Aluminum Conductor Steel Supported). In particular the ACCC design was evaluated for its resistance to corrosion and compared to the other designs. The study concludes that all three designs can develop galvanic corrosion under certain circumstances. While the results are not sufficient to make service life predictions of any of the tested conductors, they point out the necessity of thorough corrosion testing of all new conductor designs.

Table 2: Firn temperature, ram resistance, mass balance and submergence velo city measurements on Colle Gnifetti

Distributional patterns of glaciological parameters at the Colle Gnifetti core drilling site are described and their interrelationships are brietly discussed. Observations within a stake network established in 1980 furnish information about snow accumulation (short term balance), submergence velocity of ice tlow (long term balance), ram hardness (melt layer stratigraphy), and firn temperature. In addition, a numerical model was used to estimate local variations of available radiant energy. Melt layer formation is considerably more intensive on the south facing parts of the firn saddie where incoming radiation is high. These melt layers seem to effectively protect some of the fallen snow from wind erosion. As a result, balance ist up to one order of magnitude larger on south facing slopes. Heat applied to the surface is therefore positively correlated with balance, whereas the relation between solar radiation and firn temperature is less dear. Distributional patterns of submergence velocity confirm that the observed spatial variability of surface balance is representative for longer time periods and greatly intluences the time scale and the stratigraphy of firn and ice cores from Colle Gnifetti.

The effect of high temperature on the insecticidal properties of Bt Cotton

Bt transgenic cotton has not shown the same level of resistance to bollworm in China, as in other major Bt cotton growing areas of the world. The objective of this study was to investigate the effects of high temperature on the CryIA insecticidal protein content and nitrogen metabolism, in the leaf of Bt transgenic cotton. The study was undertaken on two transgenic cotton cultivars, one conventional (Xinyang 822) and the other a hybrid (Kumian No. 1), during the 2001 and 2002 growing seasons at the Yangzhou University Farm, Yangzhou, China. In the 2001 study, potted cotton plants were exposed to 37 C for 24 h under glasshouse conditions at three growth stages peak square, peak flowering and peak boll developing periods. Based on the 2001 results, in 2002 the same two cultivars were exposed to the same temperature for 48 h at two growth stages-peak flowering and boll developing periods. The results of the study indicated that the insecticidal protein content of the leaf was not significantly affected by the stress during the square and flowering periods. However, exposure to high temperature for 24h during the boll period reduced the CryIA protein content by approximately 51% in the cultivar Kumian No 1, and 30% in Xinyang 822 in the 2001 study, and by approximately 73 and 63% for 48 h with the same cultivars, respectively, in the 2002 study. Glutamic-pyruvic transaminase (GPT) activity, total free amino acid and soluble protein content, and the activity of protease in the leaf, showed relatively little change in response to high temperature in the flowering period. However, exposure to high temperature in the boll period resulted in the following changes - a reduction of GPT activity, a sharp increase in free amino acid content, a significant decrease in soluble protein content, and significant increases in the activity of protease. The results suggest that high temperature may result in the degradation of soluble protein in the leaf, with a resulting decline in the level of the toxin CryIA. It is believed that this may be the cause of the reduced efficacy of Bt cotton in growing conditions in China, where temperatures during the boll period often reach 36-40&DEG; C. © 2004 Elsevier B.V All rights reserved.