High efficiency liquid crystal lasers giving "white light" emission from arrays and flexible substrates

The self-organization of the helical structure of chiral nematic liquid crystals combined with their sensitivity to electric fields makes them particularly interesting for low-threshold, wavelength tunable laser devices. We have studied these organic lasers in detail, ranging from the influence specific macroscopic properties, such as birefringence and order parameter, have on the output characteristics, to practical systems in the form of two-dimensional arrays, double-pass geometries and paintable lasers. Furthermore, even though chiral nematics are responsive to electric fields there is no facile means by which the helix periodicity can be adjusted, thereby allowing laser wavelength tuning, without adversely affecting the optical quality of the resonator. Therefore, in addition to studying the liquid crystal lasers, we have focused on finding a novel method with which to alter the periodicity of a chiral nematic using electric fields without inducing defects and degrading the optical quality factor of the resonator. This paper presents an overview of our research, describing (i) the correlation between laser output and material properties,(ii) the importance of the gain medium,(iii) multicolor laser arrays, and (iv) high slope efficiency (>60%) silicon back-plane devices. Overall we conclude that these materials have great potential for use in versatile organic laser systems.

High-efficiency InGaN/GaN quantum well structures on large area silicon substrates

The growth techniques which have enabled the realization of InGaN-based multi-quantum-well (MQW) structures with high internal quantum efficiencies (IQE) on 150mm (6-in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large-area (111) silicon substrates, using AlGaN strain-mediating interlayers to inhibit thermal-induced cracking and wafer-bowing, and using a SiN x interlayer to reduce threading dislocation densities in the active region of the MQW structure. MQWs with high IQE approaching 60% have been demonstrated. Atomic resolution electron microscopy and EELS analysis have been used to study the nature of the important interface between the Si(111) substrate and the AlN nucleation layer. We demonstrate an amorphous SiN x interlayer at the interface about 2nm wide, which does not, however, prevent good epitaxy of the AlN on the Si(111) substrate. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low-cost high-efficiency GaN LED on large-area si substrate

The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures has attracted great interest because Si wafers are readily available in large diameter at low cost. In addition, such wafers are compatible with existing processing lines for the 6-inch and larger wafer sizes commonly used in the electronics industry. With the development of various methods to avoid wafer cracking and reduce the defect density, the performance of GaN-based LED and electronic devices has been greatly improved. In this paper, we review our methods of growing crack-free InGaN-GaN multiple quantum well (MQW) LED structures of high crystalline quality on Si(111) substrates. The performance of processed LED devices and its dependence on the threading dislocation density were studied. Full wafer-level LED processing using a conventional 6-inch III-V processing line is also presented, demonstrating the great advantage of using large-size Si substrates for mass production of GaN LED devices.

Silicon-metal waveguide as a high efficiency Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip compact and high efficiency Schottky detector for telecom wavelengths based on silicon metal waveguide. Detection is based on the internal photoemission process. Theory and experimental results are discussed. © 2012 OSA.

Silicon-metal waveguide as a high efficiency schottky detector for telecom wavelengths

We demonstrate an integrated on-chip compact and high efficiency Schottky detector for telecom wavelengths based on silicon metal waveguide. Detection is based on the internal photoemission process. Theory and experimental results are discussed. © 2012 Optical Society of America.

Switch mode constant current LED Driver with high efficiency, high precision and wide dimming ratio

A high efficiency hard switching constant current LED driver is presented with high overall efficiency, high current precision, high LED efficacy, flicker-free and wide constant current dimming ratio. The high stable lighting source provides the best solution for office light, reading light and LCD backlight. © 2013 IEEE.

High efficiency and broad bandwidth grating coupler between nanophotonic waveguide and fibre

A high efficiency and broad bandwidth grating coupler between a silicon-on-insulator (SOI) nanophotonic waveguide and fibre is designed and fabricated. Coupling efficiencies of 46% and 25% at a wavelength of 1.55 mu m are achieved by simulation and experiment, respectively. An optical 3 dB bandwidth of 45 nm from 1530 nm to 1575 nm is also obtained in experiment. Numerical calculation shows that a tolerance to fabrication error of 10 nm in etch depth is achievable. The measurement results indicate that the alignment error of +/-2 mu m results in less than 1 dB additional coupling loss.

High efficiency operation of butt joint line-defect-waveguide microlaser in two-dimensional photonic crystal slab

Butt joint line-defect-waveguide microlasers are demonstrated on photonic crystal slabs with airholes in a triangular lattice. Such microlaser is designed to increase the output power from the waveguide edge directly. The output power is remarkably enhanced to 214 times higher by introducing chirped structure in the output waveguide. The lasing mode operates in the linear dispersion region of the output waveguide so that the absorption loss due to the band-edge effect is reduced. The laser resonance is illustrated theoretically using the finite difference time domain method. A practical high power efficiency of 20% is obtained in this microlaser. (C) 2008 American Institute of Physics.

High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber

The generation of passively Q-switched mode-locking operation with 100% modulation depth has been observed from a diode-pumped Nd GdVO4 laser with a low temperature In0.25Ga0.75As saturable absorber, which was grown by the metal-organic chemical-vapor deposition technique and acted as saturable absorber as well as output coupler. The repetition rate and pulse duration of the mode-locked pulses concentrated in the Q-switch envelop were 455 MHz and 12 ps, respectively. The average output power was 1.8 W and the slope efficiency was 36%. (C) 2009 Elsevier B.V. All rights reserved.

Amorphous silicon nanoparticles in compound films grown on cold substrates for high-efficiency photoluminescence

Silicon nanoparticles have been fabricated in both oxide and nitride matrices by using plasma-enhanced chemical vapour deposition, for which a low substrate temperature down to 50 degreesC turns out to be most favourable. High-rate deposition onto such a cold substrate results in the formation of nanoscaled silicon particles, which have revealed an amorphous nature under transmission electron microscope (TEM) examination. The particle size can be readily controlled below 3.0 nm, and the number density amounts to over 10(12) cm(-2), as calculated from the TEM micrographs. Strong photoluminescence in the whole visible light range has been observed in the as-deposited Si-in-SiOx and Si-in-SiNx thin films. Without altering the size or structure of the particles, a post-annealing at 300 degreesC for 2 min raised the photoluminescence efficiency to a level comparable to the achievements with nanocrystalline Si-in-SiO2 samples prepared at high temperature. This low-temperature procedure for fabricating light-emitting silicon structures opens up the possibility of manufacturing integrated silicon-based optoelectronics.

Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix

Silicon nanocrystals in SiO2 matrix are fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing. The structure and photoluminescence (PL) of the resulting films is investigated as a function of deposition temperature. Drastic improvement of PL efficiency up to 12% is achieved when the deposition temperature is reduced from 250 degreesC to room temperature. Low-temperature deposition is found to result in a high quality final structure of the films in which the silicon nanocrystals are nearly strain-free, and the Si/SiO2 interface sharp. The demonstration of the superior structural and optical properties of the films represents an important step towards the development of silicon-based light emitters. (C) 2002 American Institute of Physics.

Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency

Tunnel-regenerated multiple-active-region (TRMAR) light-emitting diodes (LEDs) with high quantum efficiency and high brightness have been proposed and fabricated. We have proved experimentally that the efficiency of the electrical luminescence and the on-axis luminous intensity of such TRMAR LEDs scaled linearly approximately with the number of the active regions. The on-axis luminous intensity of such TRMAR LEDs with only 3 mum GaP current spreading layer have exceeded 5 cd at 20 mA dc operation under 15 degrees package. The high-quantum-efficiency and high-brightness LEDs under the low injection level were realized. (C) 2001 American Institute of Physics.

High efficiency fiber to waveguide optical coupler in silicon-on-insulator-based slot waveguides - art. no. 68310R

We propose a novel optical fiber-to-waveguide coupler for integrated optical circuits. The proper materials and structural parameters of the coupler, which is based on a slot waveguide, are carefully analyzed using a full-vectorial three dimensional mode solver. Because the effective refractive index of the mode in a silicon-on-insulator-based slot waveguide can be extremely close to that of the fiber, a highly efficient fiber-to-waveguide coupling application can be realized. For a TE-like mode, the calculated minimum mismatch loss is about 1.8dB at 1550nm, and the mode conversion loss can be less than 0.5dB. The discussion of the present state-of-the-art is also involved. The proposed coupler can be used in chip-to-chip communication.