978 resultados para Gates (tavaramerkki)
Resumo:
One observed vibration mode for Tainter gate skinplates involves the bending of the skinplate about a horizontal nodal line. This vibration mode can be approximated as a streamwise rotational vibration about the horizontal nodal line. Such a streamwise rotational vibration of a Tainter gate skinplate must push away water from the portion of the skinplate rotating into the reservoir and draw water toward the gate over that portion of the skinplate receding from the reservoir. The induced pressure is termed the push-and-draw pressure. In the present paper, this push-and-draw pressure is analyzed using the potential theory developed for dissipative wave radiation problems. In the initial analysis, the usual circular-arc skinplate is replaced by a vertical, flat, rigid weir plate so that theoretical calculations can be undertaken. The theoretical push-and-draw pressure is used in the derivation of the non-dimensional equation of motion of the flow-induced rotational vibrations. Non-dimensionalization of the equation of motion permits the identification of the dimensionless equivalent added mass and the wave radiation damping coefficients. Free vibration tests of a vertical, flat, rigid weir plate model, both in air and in water, were performed to measure the equivalent added mass and the wave radiation damping coefficients. Experimental results compared favorably with the theoretical predictions, thus validating the theoretical analysis of the equivalent added mass and wave radiation damping coefficients as a prediction tool for flow-induced vibrations. Subsequently, the equation of motion of an inclined circular-arc skinplate was developed by incorporating a pressure correction coefficient, which permits empirical adaptation of the results from the hydrodynamic pressure analysis of the vertical, flat, rigid weir plate. Results from in-water free vibration tests on a 1/31-scale skinplate model of the Folsom Dam Tainter gate are used to demonstrate the utility of the equivalent added mass coefficient.
Resumo:
The Assyrian capitals are not only known for their magnificent temples and palaces, but also for their monumental city walls. The most impressive and at the same time most delicate features of all the town defenses were the city gates. As they interrupted the line of defense, they were al-ways a vulnerable spot of every system of fortifications. However, the walled cities’ economic needs demanded these gateways to be built, in order to ensure the steady flow of goods and pro-visions. Apart from that, they also had a significant ideological meaning, which is emphasized by many cuneiform texts. During the excavations of the Assyrian capitals of Ashur, Dūr Šarrūkīn, and Nineveh, a fairly large number of Assyrian city gates were brought to light. By re-examining the archaeological reports and employing remote sensing, many details of these structures can still be revealed. The paper aims at illuminating the different considerations that went into constructing these gates, as well as the development Assyrian city gates underwent and what may have influenced this process.
Resumo:
At present, several models for quantum computation have been proposed. Adiabatic quantum computation scheme particularly offers this possibility and is based on a slow enough time evolution of the system, where no transitions take place. In this work, a new strategy for quantum computation is provided from the opposite point of view. The objective is to control the non-adiabatic transitions between some states in order to produce the desired exit states after the evolution. The model is introduced by means of an analogy between the adiabatic quantum computation and an inelastic atomic collision. By means of a simple two-state model, several quantum gates are reproduced, concluding the possibility of diabatic universal faulttolerant quantum computation. Going a step further, a new quantum diabatic computation model is glimpsed, where a carefully chosen Hamiltonian could carry out a non-adiabatic transition between the initial and the sought final state.
Resumo:
The optical bistability occurring in laser diode amplifiers is used to design an all-optical logic gate capable to provide the whole set of logic functions. The structure of the reported logic gate is based on two connected 1550nm laser amplifiers (Fabry-Perot and distributed feedback laser amplifiers).
Resumo:
A chaotic output was obtained previously by us, from an Optical Programmable Logic Cell when a feedback is added. Some time delay is given to the feedback in order to obtain the non-linear behavior. The working conditions of such a cell is obtained from a simple diagram with fractal properties. We analyze its properties as well as the influence of time delay on the characteristics of the working diagram. A further study of the chaotic obtained signal is presented.
Resumo:
Creo haber leído alguna vez que Bill Gates es la persona más rica del mundo, lo que me indica que hay alguien, que no es el fisco, que dedica su tiempo a contar la riqueza de los ricos. Menos mal que también hay quien, como la Fundación Príncipe de Asturias,hace algo más útil, como es ocuparse de valorar y ensalzar la parte de su riqueza que algunos ricos destinan a resolver los problemas de los pobres del mundo. Así es como ha decidido premiar a la Fundación Bill y Melinda Gates por su labor benéfica en pro de la salud mundial y de la educación, de la erradicación de la hambruna y de reducir desigualdades que afectan a lo que llamamos tercer mundo.
Resumo:
Strained fin is one of the techniques used to improve the devices as their size keeps reducing in new nanoscale nodes. In this paper, we use a predictive technology of 14 nm where pMOS mobility is significantly improved when those devices are built on top of long, uncut fins, while nMOS devices present the opposite behavior due to the combination of strains. We explore the possibility of boosting circuit performance in repetitive structures where long uncut fins can be exploited to increase fin strain impact. In particular, pMOS pass-gates are used in 6T complementary SRAM cells (CSRAM) with reinforced pull-ups. Those cells are simulated under process variability and compared to the regular SRAM. We show that when layout dependent effects are considered the CSRAM design provides 10% to 40% faster access time while keeping the same area, power, and stability than a regular 6T SRAM cell. The conclusions also apply to 8T SRAM cells. The CSRAM cell also presents increased reliability in technologies whose nMOS devices have more mismatch than pMOS transistors.