Two-photon absorption and self-phase modulation in InGaAsP/InP multi-quantum-well waveguides

We report the first measurement of two-photon absorption (TPA) and self-phase modulation in an InGaAsP/InP multi-quantum-well waveguide. The TPA coefficient, β2, was found to be 60±10 cm/GW at 1.55 μm. Despite operating at 200 nm from the band edge, self-phase modulation as high as 8±2 rad was observed for 30-ps optical pulses at 3.8-W peak input power. A theoretical calculation indicates that this enhanced phase modulation is primarily due to bandfilling in the quantum wells and the free-carrier plasma effect.

Negligible penalty all-optical routing using a 12 × 12 passive InP wavelength-selective router

This work demonstrates transmission at 2.5 Gbit/s across two wavelength-division multiplexing (WDM) network nodes, constructed using counter-propagating semiconductor optical amplifier (SOA) wavelength converters and an integrated wavelength-selective router separated by 45 km of fiber, with an overall penalty of 0.6 dB. Minimal degradation of the eye diagram is evident across the whole system. Full utilization of the capacity of the router would allow an aggregate 360-Gbit/s node capacity for a WDM channel of 2.5 Gb/s.

All-optical routing using a 12×12 passive InP wavelength selective router and tuneable wavelength conversion

All-optical routing of 2.5Gbit/s WDM signals across two cascaded Optical Cross Connects(OXCs) with a penalty of only 0.6dB has been demonstrated using tuneable wavelength converters and a passive WDM router.

Fabrication of test structures for 4×4 InP/InGaAsP integrated optical matrix

A novel optical switching matrix measuring 1×2 mm2 in size is fabricated. The switching matrix is composed of waveguides, four 1×4 multimode interference (MMI) splitters, 32 total internal refraction mirrors and four 4×1 MMI combiners with the extremely compact size of 1×2 mm2. This integrated device are assessed and loss contribution measured from test structure is presented.

Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

All-optical routing using a 12×12 passive InP wavelength selective router and tuneable wavelength conversion

All-optical routing of 2.5Gbit/s WDM signals across two cascaded Optical Cross Connects(OXCs) with a penalty of only 0.6dB has been demonstrated using tuneable wavelength converters and a passive WDM router.

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.

We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm² V⁻¹ s⁻¹, which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s⁻¹. This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10⁵ cm s⁻¹. These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices.

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.

Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoexcited carriers in single InP nanowires. At early times after pulsed excitation, the photoluminescence line shape displays a characteristic broadening, consistent with emission from a degenerate, high-density electron-hole plasma. As the electron-hole plasma cools and the carrier density decreases, the emission rapidly converges toward a relatively narrow band consistent with free exciton emission from the InP nanowire. The free excitons in these single InP nanowires exhibit recombination lifetimes closely approaching that measured in a high-quality epilayer, suggesting that in these InP nanowires, electrons and holes are relatively insensitive to surface states. This results in higher quantum efficiencies than other single-nanowire systems as well as significant state-filling and band gap renormalization, which is observed at high electron-hole carrier densities.

Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices. © 2010 IEEE.