A wearable system to time gate crossing during alpine skiing slalom

INTRODUCTION: In alpine skiing, chronometry analysis is currently the most common tool to assess performance. It is widely used to rank competitors during races, as well as to manage athletes training and to evaluate material. Usually, this measurement is accurately realized using timing cells. Nevertheless, these devices are too complex and expensive to allow chronometry of every gates crossing. On the other side, differential GPS can be used for measuring gate crossing time (Waegli et al). However, this is complex (e.g. recording gate position with GPS) and mainly used in research applications. The aim of the study was to propose a wearable system to time gates crossing during alpine skiing slalom (SL), which is suitable for routine uses. METHODS: The proposed system was composed of a 3D accelerometer (ADXL320®, Analog Device, USA) placed at the sacrum of the athlete, a matrix of force sensors (Flexiforce®, Tekscan, USA) fixed on the right shin guard and a data logger (Physilog®, BioAGM, Switzerland). The sensors were sampled at 500 Hz. The crossing time were calculated in two phases. First, the accelerometer was used to detect the curves by considering the maximum of the mediolateral peak acceleration. Then, the force sensors were used to detect the impacts with the gates by considering maximum force variation. In case of non impact, the detection was realized based on the acceleration and features measured at the other gates. In order to assess the efficiency of the system, two different SL were monitored twice for two world cup level skiers, a male SL expert and a female downhill expert. RESULTS AND DISCUSSION: The combination of the accelerometer and force sensors allowed to clearly identify the gate crossing times. When comparing the runs of the SL expert and the downhill expert, we noticed that the SL expert was faster. For example for the first SL, the overall difference between the best run of each athlete was of 5.47s. At each gate, the SL expert increased the time difference slower at the beginning (0.27s/gate) than at the end (0.34s/gate). Furthermore, when comparing the runs of the SL expert, a maximum time difference of 20ms at each gate was noticed. This showed high repeatability skills of the SL expert. In opposite, the downhill expert with a maximum difference time of 1s at each gate was clearly less repeatable. Both skiers were not disturbed by the system. CONCLUSION: This study proposed a new wearable system to automatically time gates crossing during alpine skiing slalom combining force and accelerometer sensors. The system was evaluated with two professional world cup skiers and showed a high potential. This system could be extended to time other parameters. REFERENCES Waegli A, Skaloud J (2007). Inside GNSS, Spring, 24-34.

Top-gate microcrystalline silicon TFTs processed at low temperature (<200ºC)

N-type as well P-type top-gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200 °C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs)-doped μc-films deposited by HW-CVD. The gate insulator is a silicon dioxide film deposited by RF sputtering. Al-SiO 2-N type c-Si structures using this insulator present low flat-band voltage,-0.2 V, and low density of states at the interface D it=6.4×10 10 eV -1 cm -2. High field effect mobility, 25 cm 2/V s for electrons and 1.1 cm 2/V s for holes, is obtained. These values are very high, particularly the hole mobility that was never reached previously.

Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks

We report on a field-effect light emitting device based on silicon nanocrystals in silicon oxide deposited by plasma-enhanced chemical vapor deposition. The device shows high power efficiency and long lifetime. The power efficiency is enhanced up to 0.1 %25 by the presence of a silicon nitride control layer. The leakage current reduction induced by this nitride buffer effectively increases the power efficiency two orders of magnitude with regard to similarly processed devices with solely oxide. In addition, the nitride cools down the electrons that reach the polycrystalline silicon gate lowering the formation of defects, which significantly reduces the device degradation.

Role of PheE15 gate in ligand entry and nitric oxide detoxification function of Mycobacterium tuberculosis truncated hemoglobin N

The truncated hemoglobin N, HbN, of Mycobacterium tuberculosis is endowed with a potent nitric oxide dioxygenase (NOD) activity that allows it to relieve nitrosative stress and enhance in vivo survival of its host. Despite its small size, the protein matrix of HbN hosts a two-branched tunnel, consisting of orthogonal short and long channels, that connects the heme active site to the protein surface. A novel dual-path mechanism has been suggested to drive migration of O(2) and NO to the distal heme cavity. While oxygen migrates mainly by the short path, a ligand-induced conformational change regulates opening of the long tunnel branch for NO, via a phenylalanine (PheE15) residue that acts as a gate. Site-directed mutagenesis and molecular simulations have been used to examine the gating role played by PheE15 in modulating the NOD function of HbN. Mutants carrying replacement of PheE15 with alanine, isoleucine, tyrosine and tryptophan have similar O(2)/CO association kinetics, but display significant reduction in their NOD function. Molecular simulations substantiated that mutation at the PheE15 gate confers significant changes in the long tunnel, and therefore may affect the migration of ligands. These results support the pivotal role of PheE15 gate in modulating the diffusion of NO via the long tunnel branch in the oxygenated protein, and hence the NOD function of HbN.

Field-Programmable Gate Array Card for Readout and Control of Cryoelectronics

The main goal of the present Master’s Thesis project was to create a field-programmable gate array (FPGA) based system for the control of single-electron transistors or other cryoelectronic devices. The FPGA and similar technologies are studied in the present work. The fixed and programmable logic are compared with each other. The main features and limitations of the hardware used in the project are investigated. The hardware and software connections of the device to the computer are shown in detail. The software development techniques for FPGA-based design are described. The steps of design for programmable logic are considered. Furthermore, the results of filters implemented in the software are illustrated.

I must walk through the gate : an ontological necessity

This research is a self-study into my life as an athlete, elementary school teacher, leamer, and as a teacher educator/academic. Throughout the inquiry, I explore how my beliefs and values infused my lived experiences and ultimately influenced my constructivist, humanist, and ultimately my holistic teaching and learning practice which at times disrupted the status quo. I have written a collection of narratives (data generation) which embodied my identity as an unintelligent student/leamer, a teacher/learner, an experiential learner, a tenacious participant, and a change agent to name a few. As I unpack my stories and hermeneutically reconstruct their intent, I question their meaning as I explore how I can improve my teaching and learning practice and potentially effect positive change when instructing beginning teacher candidates at a Faculty of Education. At the outset I situate my story and provide the necessary political, social, and cultural background information to ground my research. I follow this with an in depth look at the elements that interconnect the theoretical framework of this self-study by presenting the notion of writing at the boundaries through auto ethnography (Ellis, 2000; Ellis & Bochner, 2004) and writing as a method of inquiry (Richardson, 2000). The emergent themes of experiential learning, identity, and embodied knowing surfaced during the data generation phase. I use the Probyn' s (1990) .. metaphor of locatedness to unpack these themes and ponder the question, Where is experience located? I deepen the exploration by layering Drake's (2007) KnowlDo/Be framework alongside locatedness and offer descriptions of learning moments grounded in pedagogical theories. In the final phase, I introduce thirdspace theory (Bhabha, 1994; Soja, 1996) as a space that allowed me to puzzle educational dilemmas and begin to reconcile the binaries that existed in my life both personally, and professionally. I end where I began by revisiting the questions that drove this study. In addition, Ireflect upon the writing process and the challenges that I encountered while immersed in this approach and contemplate the relevance of conducting a self-study. I leave the reader with what is waiting for me on the other side of the gate, for as Henry James suggested, "Experience is never limited, and it is never complete."