986 resultados para Equivalent-circuit model


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The ability to predict the properties of magnetic materials in a device is essential to ensuring the correct operation and optimization of the design as well as the device behavior over a wide range of input frequencies. Typically, development and simulation of wide-bandwidth models requires detailed, physics-based simulations that utilize significant computational resources. Balancing the trade-offs between model computational overhead and accuracy can be cumbersome, especially when the nonlinear effects of saturation and hysteresis are included in the model. This study focuses on the development of a system for analyzing magnetic devices in cases where model accuracy and computational intensity must be carefully and easily balanced by the engineer. A method for adjusting model complexity and corresponding level of detail while incorporating the nonlinear effects of hysteresis is presented that builds upon recent work in loss analysis and magnetic equivalent circuit (MEC) modeling. The approach utilizes MEC models in conjunction with linearization and model-order reduction techniques to process magnetic devices based on geometry and core type. The validity of steady-state permeability approximations is also discussed.

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In this paper it is proposed to obtain enhanced and more efficient parameters model from generalized five parameters (single diode) model of PV cells. The paper also introduces, describes and implements a seven parameter model for photovoltaic cell (PV cell) which includes two internal parameters and five external parameters. To obtain the model the mathematical equations and an equivalent circuit consisting of a photo generated current source, a series resistor, a shunt resistor and a diode is used. The fundamental equation of PV cell is used to analyse and best fit the observation data. Especially bisection iteration method is used to obtain the expected result and to understand the deviation of changes in different parameters situation at various conditions respectively. The produced model can be used of measuring and understanding the actions of photovoltaic cells for certain changes and parameters extraction. The effect is also studied with I-V and P-V characteristics of PV cells though it is a challenge to optimize the output with real time simulation. The working procedure is also discussed and an experiment presented to get the closure and insight about the produced model and to decide upon the model validity. At the end, we observed that the result of the simulation is very close to the produced model.

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The validity of the concept of equivalent sphere introduced by Aris in 1957 to multicomponent reacting systems is investigated in this paper. A network of C6 hydrocarbon reforming reaction and a fixed bed reactor are taken as the model reaction network and the reactor configuration, respectively.

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This communications describes an electromagnetic model of a radial line planar antenna consisting of a radial guide with one central probe and many peripheral probes arranged in concentric circles feeding an array of antenna elements such as patches or wire curls. The model takes into account interactions between the coupling probes while assuming isolation of radiating elements. Based on this model, computer programs are developed to determine equivalent circuit parameters of the feed network and the radiation pattern of the radial line planar antenna. Comparisons are made between the present model and the two-probe model developed earlier by other researchers.

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Dissertation presented to obtain the PhD degree in Electrical and Computer Engineering - Electronics

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L’objectiu d’aquest projecte que consisteix a elaborar un algoritme d’optimització que permeti, mitjançant un ajust de dades per mínims quadrats, la extracció dels paràmetres del circuit equivalent que composen el model teòric d’un ressonador FBAR, a partir de les mesures dels paràmetres S. Per a dur a terme aquest treball, es desenvolupa en primer lloc tota la teoria necessària de ressonadors FBAR. Començant pel funcionament i l’estructura, i mostrant especial interès en el modelat d’aquests ressonadors mitjançant els models de Mason, Butterworth Van-Dyke i BVD Modificat. En segon terme, s’estudia la teoria sobre optimització i programació No-Lineal. Un cop s’ha exposat la teoria, es procedeix a la descripció de l’algoritme implementat. Aquest algoritme utilitza una estratègia de múltiples passos que agilitzen l'extracció dels paràmetres del ressonador.

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Työssä tutkitaan nopeusanturittoman vaihtovirtakäytön skalaarisia ohjaus- ja säätömenetelmiä. Työn alussa esitetään perusteoriat taajuusmuuttajista ja oikosulkumoottoreista. Tämän jälkeen esitellään yleisimmin kirjallisuudessa esiintyneet skalaariohjaukset ja –säädöt. Vektorisäätöä ja erityisesti moottoriparametrien vaikutusta säädön toimivuuteen esitellään lyhyesti. Työn tavoitteena on ACS800 taajuusmuuttajan skalaarisäädön tutkiminen. ACS800:n nykyinen skalaarisäätö on liian sidoksissa vektorisäätöön, joten simulointien ja kirjallisuustutkimuksen tarkoituksena on täysin vektorisäädöstä eriytetyn skalaarisäädön kehitysmahdollisuuksien tutkiminen. Kirjallisuudessa esiintyneiden säätöjen avulla muodostetaan diskreettiaikainen toteutus skalaarisäädölle vaihtovirtakäytössä, jossa on käytössä virran ja välipiirijännitteen takaisinkytkentä. Säädettävää moottoria mallinnetaan jatkuvaaikaisella L-sijaiskytkennällä. Välipiirin mallinnus toimii myös jatkuva-aikaisena lukuun ottamatta välipiirin tasavirtakomponenttia, joka muodostetaan virran takaisinkytkennän ja PWM-modulaattorin kytkinasentojen avulla. Simuloinnin tarkoituksena on mallintaa skalaarisäädön suurimpia ongelmia, kuten virta- ja välijännitesäätöä. Tuloksista voidaan päätellä, että perussäädöt toimivat moitteettomasti, mutta erityisesti virtasäätöä tulisi kehittää.

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Tässä kandidaatintyössä on tarkoitus määrittää monitoisioisen muuntajan yksivaiheisen sijaiskytkentä ja sen parametrit käyttämällä perinteisiä mittausmenetelmiä. Näihin kuuluvat tyhjäkäynti-, oikosulku- sekä tasajännitekoe. Muuntajasta on tehty simulointimalli, jota varten sijaiskytkennän parametreja tarvitaan.

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A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise inducedby the diffusion of carriers through the semiconductor and the noise induced by the thermionicemission of carriers across the metal¿semiconductor interface. Closed analytical formulas arederived for the junction resistance, series resistance, and contributions to the net noise localized indifferent space regions of the diode, all valid in the whole range of applied biases. An additionalcontribution to the voltage-noise spectral density is identified, whose origin may be traced back tothe cross correlation between the voltage-noise sources associated with the junction resistance andthose for the series resistance. It is argued that an inclusion of the cross-correlation term as a newelement in the existing equivalent circuit models of Schottky diodes could explain the discrepanciesbetween these models and experimental measurements or Monte Carlo simulations.

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A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise inducedby the diffusion of carriers through the semiconductor and the noise induced by the thermionicemission of carriers across the metal¿semiconductor interface. Closed analytical formulas arederived for the junction resistance, series resistance, and contributions to the net noise localized indifferent space regions of the diode, all valid in the whole range of applied biases. An additionalcontribution to the voltage-noise spectral density is identified, whose origin may be traced back tothe cross correlation between the voltage-noise sources associated with the junction resistance andthose for the series resistance. It is argued that an inclusion of the cross-correlation term as a newelement in the existing equivalent circuit models of Schottky diodes could explain the discrepanciesbetween these models and experimental measurements or Monte Carlo simulations.

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This paper discusses different aspects related to the application of electrochemical impedance spectroscopy (EIS) in the study of heterogeneous electrochemical reactions occurring on Dimensionally Stable anodes (DSA®). The most relevant aspects of the semiconductor/electrolyte interface, the application of the EIS classical equivalent circuit approach and the ac porous model in DSA are presented. The paper shows that DSA type electrodes can be consistently investigated by using the ac porous model and an analysis is presented showing the advantage of applying this kind of approach to study heterogeneous reactions on DSA electrodes. Furthermore, some preliminary results on Ti/Ru0,3Ti(0,7-x)Sn x O2 based electrodes are presented to exemplify the use of the ac porous model analysis.

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A description is given of the global atmospheric electric circuit operating between the Earth’s surface and the ionosphere. Attention is drawn to the huge range of horizontal and vertical spatial scales, ranging from 10−9 m to 1012 m, concerned with the many important processes at work. A similarly enormous range of time scales is involved from 10−6 s to 109 s, in the physical effects and different phenomena that need to be considered. The current flowing in the global circuit is generated by disturbed weather such as thunderstorms and electrified rain/shower clouds, mostly occurring over the Earth’s land surface. The profile of electrical conductivity up through the atmosphere, determined mainly by galactic cosmic ray ionization, is a crucial parameter of the circuit. Model simulation results on the variation of the ionospheric potential, ∼250 kV positive with respect to the Earth’s potential, following lightning discharges and sprites are summarized. Experimental results comparing global circuit variations with the neutron rate recorded at Climax, Colorado, are then discussed. Within the return (load) part of the circuit in the fair weather regions remote from the generators, charge layers exist on the upper and lower edges of extensive layer clouds; new experimental evidence for these charge layers is also reviewed. Finally, some directions for future research in the subject are suggested.

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This work presents a theoretical and numerical analysis using the transverse resonance technique (TRT) and a proposed MTRT applied in the analysis of the dispersive characteristics of microstrip lines built on truncated isotropic and anisotropic dielectric substrates. The TRT uses the transmission lines model in the transversal section of the structure, allowing to analyze its dispersive behavior. The difference between TRT and MTRT consists basically of the resonance direction. While in the TRT the resonance is calculated in the same direction of the metallic strip normal axis, the MTRT considers the resonance in the metallic strip parallel plane. Although the application of the MTRT results in a more complex equivalent circuit, its use allows some added characterization, like longitudinal section electric mode (LSE) and longitudinal section magnetic mode (LSM), microstrips with truncated substrate, or structures with different dielectric regions. A computer program using TRT and MTRT proposed in this work is implemented for the characterization of microstrips on truncated isotropic and anisotropic substrates. In this analysis, propagating and evanescent modes are considered. Thus, it is possible to characterize both the dominant and higher order modes of the structure. Numerical results are presented for the effective permittivity, characteristic impedance and relative phase velocity for microstrip lines with different parameters and dimensions of the dielectric substrate. Agreement with the results obtained in the literature are shown, as well as experimental results. In some cases, the convergence analysis is also performed by considering the limiting conditions, like particular cases of isotropic materials or structures with dielectric of infinite size found in the literature. The numerical convergence of the formulation is also analyzed. Finally, conclusions and suggestions for the continuity of this work are presented

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This paper presents a new static model for tubular fluorescent lamps (T12 bulb) operated at high frequencies. The main goal of this paper is to investigate the effects of ambient temperature and nominal switching frequency of operation in the static characteristics of tubular fluorescent lamps. The methodology for obtaining the model is based on several two-dimensional mathematical regressions, used to provide the behavior of the fluorescent lamp according to different independent variables, namely: power processed through the lamp and ambient temperature. In addition, the proposed model can be easily converted to a lamp equivalent resistance model, which can be useful for ballast designers. Finally, the curves obtained using the new model are compared to the correspondent experimental data, in order to verify the accuracy of the proposed methodology.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)