1.55 µm High-Speed QDs Lasers for Optical Telecommunication Applications

In this work investigation of the QDs formation and the fabrication of QD based semiconductor lasers for telecom applications are presented. InAs QDs grown on AlGaInAs lattice matched to InP substrates are used to fabricate lasers operating at 1.55 µm, which is the central wavelength for far distance data transmission. This wavelength is used due to its minimum attenuation in standard glass fibers. The incorporation of QDs in this material system is more complicated in comparison to InAs QDs in the GaAs system. Due to smaller lattice mismatch the formation of circular QDs, elongated QDs and quantum wires is possible. The influence of the different growth conditions, such as the growth temperature, beam equivalent pressure, amount of deposited material on the formation of the QDs is investigated. It was already demonstrated that the formation process of QDs can be changed by the arsenic species. The formation of more round shaped QDs was observed during the growth of QDs with As2, while for As4 dash-like QDs. In this work only As2 was used for the QD growth. Different growth parameters were investigated to optimize the optical properties, like photoluminescence linewidth, and to implement those QD ensembles into laser structures as active medium. By the implementation of those QDs into laser structures a full width at half maximum (FWHM) of 30 meV was achieved. Another part of the research includes the investigation of the influence of the layer design of lasers on its lasing properties. QD lasers were demonstrated with a modal gain of more than 10 cm-1 per QD layer. Another achievement is the large signal modulation with a maximum data rate of 15 Gbit/s. The implementation of optimized QDs in the laser structure allows to increase the modal gain up to 12 cm-1 per QD layer. A reduction of the waveguide layer thickness leads to a shorter transport time of the carriers into the active region and as a result a data rate up to 22 Gbit/s was achieved, which is so far the highest digital modulation rate obtained with any 1.55 µm QD laser. The implementation of etch stop layers into the laser structure provide the possibility to fabricate feedback gratings with well defined geometries for the realization of DFB lasers. These DFB lasers were fabricated by using a combination of dry and wet etching. Single mode operation at 1.55 µm with a high side mode suppression ratio of 50 dB was achieved.

Silk fibroin biopolymer films as efficient hosts for DFB laser operation

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Boolean logic device done with DFB laser diode

We present simulation results on how power output-input characteristic Instability in Distributed FeedBack -DFB semiconductor laser diode SLA can be employed to implemented Boolean logic device. Two configurations of DFB Laser diode under external optical injection, either in the transmission or in the reflective mode of operation, is used to implement different Optical Logic Cells (OLCs), called the Q- and the P-Device OLCs. The external optical injection correspond to two inputs data plus a cw control signal that allows to choose the Boolean logic function to be implement. DFB laser diode parameters are choosing to obtain an output-input characteristic with the values desired. The desired values are mainly the on-off contrast and switching power, conforming shape of hysteretic cycle. Two DFB lasers in cascade, one working in transmission operation and the other one in reflective operation, allows designing an inputoutput characteristic based on the same respond of a self-electrooptic effect device is obtained. Input power for a bit'T' is 35 uW(70uW) and a bit "0" is zero for all the Boolean function to be execute. Device control signal range to choose the logic function is 0-140 uW (280 uW). Q-device (P-device)

Adaptive modulation induced WDM impairment reduction in optical OFDM PONs

The transmission performance of multi-channel adaptively modulated optical OFDM (AMOOFDM) signals is numerically investigated, for the first time, in optical amplification- and chromatic dispersion compensation-free, intensity-modulation and direct-detection systems incorporating directly modulated DFB lasers (DMLs). It is shown that adaptive modulation not only reduces significantly the nonlinear WDM impairments induced by the effects of cross-phase modulation and four-wave mixing, but also compensates effectively for the DML-induced frequency chirp effect. In comparison with identical modulation, adaptive modulation improves the maximum achievable signal transmission capacity of a central channel by a factor of 1.3 and 3.6 for 40km and 80km SMFs, respectively, with corresponding dynamic input optical power ranges being extended by approximately 5dB. In addition, adaptive modulation also enables cross-channel complementary modulation format mapping, leading to an improved transmission capacity of the entire WDM system. Copyright © 2010 The authors.

High performance uncooled 1.3μm VCSELs for RF-over-fiber applications

Uncooled directly-modulated 1.3μm VCSELs are shown to exhibit dynamic range, linearity and noise performance required for wireless LAN applications. A multimode fiber based WLAN 802.11b system shows performances comparable to systems with state-of-the-art DFB lasers. © 2005 Optical Society of America.

High performance uncooled 1.3μm VCSELs for RF-over-fiber applications

Uncooled directly-modulated 1.3μm VCSELs are shown to exhibit dynamic range, linearity and noise performance required for wireless LAN applications. A multimode fiber based WLAN 802.11b system shows performances comparable to systems with state-of-the-art DFB lasers. © 2005 Optical Society of America.

A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode

A 1.3-mu m AlGaInAs/InP buried heterostructure (BH) stripe distributed feedback laser with a novel AlInAs/InP complex-coupled grating grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is proposed and demonstrated. A high characteristic temperature (T-0 = 90K between 20-80 degrees C) and temperature-insensitive slope efficiency (0.25 dB drop from 20 to 80 degrees C) in 1.3 mu m AlGaInAs/InP DFB lasers was obtained by introducing AI(Ga)InAs graded-index separate-confinement heterostructure (GRINSCH) layers and a strained-compensated (SC) multi-quantum well (MQW).

InP-based optoelectronic devices for optical fiber communications

In this contribution we report the research and development of 1.55 mu m InGaAsP/InP gain-coupled DFB laser with an improved injection-carrier induced grating and of high performance 1.3 mu m and 1.55 mu m InGaAsP/InP FP and DFB lasers for communications. Long wavelength strained MQW laser diodes with a very low threshold current (7-10 mA) have been fabricated. Low pressure MOVPE technology has been employed for the preparation of the layered structure. A novel gain-coupled DFB laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. The laser structures have been prepared by hybrid growth of MOVPE and LPE techniques and reasonably good characteristics have been achieved for resultant lasers. High performance 1.3 mu m and 1.55 mu m InGaAsP/InP DFB lasers have successfully been developed for CATV and trunk line optical fiber communication.

InP-based optoelectronic devices for optical fiber communications

In this contribution we report the research and development of 1.55 mu m InGaAsP/InP gain-coupled DFB laser with an improved injection-carrier induced grating and of high performance 1.3 mu m and 1.55 mu m InGaAsP/InP FP and DFB lasers for communications. Long wavelength strained MQW laser diodes with a very low threshold current (7-10 mA) have been fabricated. Low pressure MOVPE technology has been employed for the preparation of the layered structure. A novel gain-coupled DFB laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. The laser structures have been prepared by hybrid growth of MOVPE and LPE techniques and reasonably good characteristics have been achieved for resultant lasers. High performance 1.3 mu m and 1.55 mu m InGaAsP/InP DFB lasers have successfully been developed for CATV and trunk line optical fiber communication.

40 Gbits/s all-optical clock recovery for degraded signals using an amplified feedback laser

All-optical clock recovery for the return-to-zero modulation format is demonstrated experimentally at 40 Gbits/s by using an amplified feedback laser. A 40 GHz optical clock with a root-mean-square (rms) timing jitter of 130 fs and a carrier-to-noise ratio of 42 dB is obtained. Also, a 40 GHz optical clock with timing jitter of 137 fs is directly recovered from pseudo-non-return-to-zero signals degraded by polarization-mode dispersion (PMD). No preprocessing stage to enhance the clock tone is used. The rms timing jitter of the recovered clock is investigated for different values of input power and for varying amounts of waveform distortion due to PMD.

Distributed feedback multipeak laser emission in Rhodamine 6G doped organic-inorganic hybrids

Organic-inorganic hybrid materials were prepared from an ureasil precursor (ureapropyltriethoxysilane designated as UPTES) and acrylic acid modified zirconium (IV) n-propoxide. Thin films containing rhodamine 6G (Rh6G) were prepared by spin-coating on glass substrates with different Zr:Si molar ratios (Zr:Si = 75:25, 50:50 and 25:75). Refractive index, thickness, number of propagating modes and attenuation coefficient were measured at 543.5, 632.8 and 1550 nm wavelengths by the prism coupling technique. Distributed feedback (DFB) laser effect was observed and studied as a function of films thickness and refractive index.

Laser diode bistability as sensor of optical signals pameters

Laser Diodes have been employed many times as light sources on different kinds of optical sensors. Their main function in these applications was the emission of an optical radiation impinging onto a certain object and, according to the characteristics of the reflected light, some information about this object was obtained. Laser diodes were acting, in a certain way, just as passive devices where their only function was to provide the adequate radiation to be later measured and analyzed. The objective of this paper is to report a new concept on the use of laser diodes taking into account their optical bistable properties. As it has been shown in several places, different laser diodes as, for example, DFB lasers and FP lasers, offer bistable characteristics being these characteristics a function of different parameters as wavelength, light polarization or temperature. Laser Bistability is strongly dependent on them and any small variation of above parameters gives rise to a strong change in the characteristics of its non-linear properties. These variations are analyzed and their application in sensing reported. The dependence on wavelength, spectral width, input power and phase variations, mainly for a Fabry-Perot Laser structure as basic configuration, is shown in this paper.

Application of long-period-grating sensors to respiratory plethysmography

A series of in-line curvature sensors on a garment are used to monitor the thoracic and abdominal movements of a human during respiration. These results are used to obtain volumetric tidal changes of the human torso in agreement with a spirometer used simultaneously at the mouth. The curvature sensors are based on long-period gratings (LPGs) written in a progressive three-layered fiber to render the LPGs insensitive to the refractive index external to the fiber. A curvature sensor consists of the fiber long-period grating laid on a carbon fiber ribbon, which is then encapsulated in a low-temperature curing silicone rubber. The sensors have a spectral sensitivity to curvature, d lambda/dR from similar to 7-nm m to similar to 9-nm m. The interrogation technique is borrowed from derivative spectroscopy and monitors the changes in the transmission spectral profile of the LPG's attenuation band due to curvature. The multiplexing of the sensors is achieved by spectrally matching a series of distributed feedback (DFB) lasers to the LPGs. The versatility of this sensing garment is confirmed by it being used on six other human subjects covering a wide range of body mass indices. Just six fully functional sensors are required to obtain a volumetric error of around 6%. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

Application of long-period-grating sensors to respiratory plethysmography

A series of in-line curvature sensors on a garment are used to monitor the thoracic and abdominal movements of a human during respiration. These results are used to obtain volumetric tidal changes of the human torso in agreement with a spirometer used simultaneously at the mouth. The curvature sensors are based on long-period gratings (LPGs) written in a progressive three-layered fiber to render the LPGs insensitive to the refractive index external to the fiber. A curvature sensor consists of the fiber long-period grating laid on a carbon fiber ribbon, which is then encapsulated in a low-temperature curing silicone rubber. The sensors have a spectral sensitivity to curvature, dλ/dR from ∼7-nm m to ∼9-nm m. The interrogation technique is borrowed from derivative spectroscopy and monitors the changes in the transmission spectral profile of the LPG's attenuation band due to curvature. The multiplexing of the sensors is achieved by spectrally matching a series of distributed feedback (DFB) lasers to the LPGs. The versatility of this sensing garment is confirmed by it being used on six other human subjects covering a wide range of body mass indices. Just six fully functional sensors are required to obtain a volumetric error of around 6%. © 2007 Society of Photo-Optical Instrumentation Engineers.

Stable single frequency and single polarization DFB fiber lasers operated at 1053 nm

Stable single-frequency and single-polarization distributed-feedback (DFB) fiber laser was realized by giving a pressure on the phase shift region of the fiber grating. The output wavelength of the DFB fiber laser is 1053 nm. When the pump power of 980 nm laser diode is 100 and 254 mW, the output power can reach 8.3 and 37.1 mW and the polarization extinction ratio was 26 and 20 dB, respectively. After chopped by Acousto-optic modulator (0.3 Hz), the pulse peak value variance is 4.65%(peak to peak) and 1.098% (RMS) for 31 min. (C) 2006 Elsevier Ltd. All rights reserved.