Temperature dependence and characterization of gold thin film actuated membranes for radio frequency microelectromechanical switches

Over the last 10 years, the development and the understanding of the mechanical properties of thin film material have been essential for improving the reliability and lifetime in operation of microelectromechanical systems (MEMS). Although the properties of a bulk material might be well characterized, thin-film properties are considerably different from those of the bulk and it cannot be assumed that mechanical properties measured using bulk specimens will apply to the same materials when used as a thin film in MEMS. For many microelectronic thin films, the material properties depend strongly on the details of the deposition process and the growth conditions on its substrate. ^ The purpose of this dissertation is to determine the temperature dependence of a gold thin film membrane on the pull down voltage of a MEMS switch as the temperature is varied from room temperature (300 K) to cryogenic temperature (10 K). For this purpose, an RF MEMS shunt switch was designed and fabricated. The switch is composed of a gold coplanar waveguide structure with a gold bridge membrane suspended above an area of the center conductor which is covered by a dielectric (BaTiO3). The gold membrane is actuated by an electrostatic force acting between the transmission line and the membrane when voltage is applied. ^ Material characterization of the gold evaporated thin film membrane was obtained via AFM, SEM, TEM and X-ray diffraction analyses. A mathematical relation was used to estimate the pull down voltage of the switch at cryogenic temperature and results showed that the mathematical theory match the experimental values of the tested MEMS switches. ^

Elastic modulus study of gold thin film for use as an actuated membrane in a superconductive radio frequency (RF) MicroElectroMechanical (MEM) switch

The objective of this research was to find Young's elastic modulus for thin gold films at room and cryogenic temperatures based on the flexional model which has not been previously attempted. Electrical Sonnet simulations and numerical methods using Abacus for the mechanical responses were employed for this purpose. A RF MEM shunt switch was designed and a fabrication process developed in house. The switch is composed of a superconducting YBa2Cu3O7 coplanar waveguide structure with an Au bridge membrane suspended above an area of the center conductor covered with BaTiO3 dielectric. The Au membrane is actuated by the electrostatic attractive force acting between the transmission line and the membrane when voltage is applied. The value of the actuation force will greatly depend on the switch pull-down voltage and on the geometry and mechanical properties of the bridge material. Results show that the elastic modulus for Au thin film can be 484 times higher at cryogenic temperature than it is at room temperature.

Design and simulation of a low-actuation-voltage MEMS switch

This paper presents a low-actuation-voltage micro-electromechanical system (MEMS) capacitive shunt switch which has a very large bandwidth (4 GHz to 24 GHz). In this work, the isolation of MEMS switch is improved by adding two short high impedance transmission lines at the beginning and end of a coplanar waveguide (CPW). Simulating the switch demonstrates that a return loss (S11) is less than -26 dB for the entire frequency band, and perfect matching at 20 GHz in upstate position. A ramp dual pulse driver is also designed for reducing the capacitive charge injection for considering the reliability of the switch. The simulation results show that the shifting of voltage due to the capacitive charge is reduced by more than 35% of the initial value. Finally, the dynamic behavior of the MEMS switch is simulated by modal analysis and using CoventorWare to calculate the natural frequencies of the switch and its mode shapes. The switching ON and OFF time are 4.48 and 2.43 μs, respectively, with an actuation voltage of less than 15 V.

Through Wafer 3D Vertical Micro-Coaxial Probe for High Frequency Material Characterization and Millimeter Wave Packaging Systems

This work presents the development of an in-plane vertical micro-coaxial probe using bulk micromachining technique for high frequency material characterization. The coaxial probe was fabricated in a silicon substrate by standard photolithography and a deep reactive ion etching (DRIE) technique. The through-hole structure in the form of a coaxial probe was etched and metalized with a diluted silver paste. A co-planar waveguide configuration was integrated with the design to characterize the probe. The electrical and RF characteristics of the coaxial probe were determined by simulating the probe design in Ansoft’s High Frequency Structure Simulator (HFSS). The reflection coefficient and transducer gain performance of the probe was measured up to 65 GHz using a vector network analyzer (VNA). The probe demonstrated excellent results over a wide frequency band, indicating its ability to integrate with millimeter wave packaging systems as well as characterize unknown materials at high frequencies. The probe was then placed in contact with 3 materials where their unknown permittivities were determined. To accomplish this, the coaxial probe was placed in contact with the material under test and electromagnetic waves were directed to the surface using the VNA, where its reflection coefficient was then determined over a wide frequency band from dc-to -65GHz. Next, the permittivity of each material was deduced from its measured reflection coefficients using a cross ratio invariance coding technique. The permittivity results obtained when measuring the reflection coefficient data were compared to simulated permittivity results and agreed well. These results validate the use of the micro-coaxial probe to characterize the permittivity of unknown materials at high frequencies up to 65GHz.

A hybrid approach for resolving the electromagnetic fields inside a waveguide loaded with a lossy medium

In this work a novel hybrid approach is presented that uses a combination of both time domain and frequency domain solution strategies to predict the power distribution within a lossy medium loaded within a waveguide. The problem of determining the electromagnetic fields evolving within the waveguide and the lossy medium is decoupled into two components, one for computing the fields in the waveguide including a coarse representation of the medium (the exterior problem) and one for a detailed resolution of the lossy medium (the interior problem). A previously documented cell-centred Maxwell’s equations numerical solver can be used to resolve the exterior problem accurately in the time domain. Thereafter the discrete Fourier transform can be applied to the computed field data around the interface of the medium to estimate the frequency domain boundary condition in-formation that is needed for closure of the interior problem. Since only the electric fields are required to compute the power distribution generated within the lossy medium, the interior problem can be resolved efficiently using the Helmholtz equation. A consistent cell-centred finite-volume method is then used to discretise this equation on a fine mesh and the underlying large, sparse, complex matrix system is solved for the required electric field using the iterative Krylov subspace based GMRES iterative solver. It will be shown that the hybrid solution methodology works well when a single frequency is considered in the evaluation of the Helmholtz equation in a single mode waveguide. A restriction of the scheme is that the material needs to be sufficiently lossy, so that any penetrating waves in the material are absorbed.

A compact interferometric sensor design using three waveguide coupling

The use of metal stripes for the guiding of plasmons is a well established technique for the infrared regime and has resulted in the development of a myriad of passive optical components and sensing devices. However, the plasmons suffer from large losses around sharp bends, making the compact design of nanoscale sensors and circuits problematic. A compact alternative would be to use evanescent coupling between two sufficiently close stripes, and thus we propose a compact interferometer design using evanescent coupling. The sensitivity of the design is compared with that achieved using a hand-held sensor based on the Kretschmann style surface plasmon resonance technique. Modeling of the new interferometric sensor is performed for various structural parameters using finite-difference time-domain and COMSOL Multiphysics. The physical mechanisms behind the coupling and propagation of plasmons in this structure are explained in terms of the allowed modes in each section of the device.

Optical waveguide and cavity effects on whispering-gallery mode resonances in a ZnO nanonail

Spatially resolved cathodoluminescence (CL) study of a ZnO nanonail, having thin shank, tapered neck, and hexagonal head sections, is reported. Monochromatic imaging and line scan profiling indicate that the wave guiding and leaking from growth imperfections in addition to the oxygen deficiency variation determine the spatial contrast of CL emissions. Occurrence of resonance peaks at identical wavelengths regardless of CL-excitation spots is inconsistent with the whispering-gallery mode (WGM) resonances of a two-dimensional cavity in the finite difference time domain simulation. However, three dimensioanl cavity simulation produced WGM peaks that are consistent with the experimental spectra, including transverse-electric resonances that are comparable to transverse-magnetic ones.

Simulations of the effect of waveguide cross-section on quantum dot – plasmon coupling

Quantum dot - plasmon waveguide systems are of interest for the active control of plasmon propagation, and consequently, the development of active nanophotonic devices such as nano-sized optical transistors. This paper is concerned with how varying aspect ratio of the waveguide crosssection affects the quantum dot - plasmon coupling. We compare a stripe waveguide with an equivalent nanowire, illustrating that both waveguides have a similar coupling strength to a nearby quantum dot for small waveguide cross-section, thereby indicating that stripe lithographic waveguides have strong potential use in quantum dot –plasmon waveguide systems. We also demonstrate that changing the aspect ratio of both stripe and wire waveguides can increase the spontaneous emission rate of the quantum dot into the plasmon mode, by up to a factor of five. The results of this paper will contribute to the optimisation of quantum dot - plasmon waveguide systems and help pave the way for the development of active nanophotonics devices.

Graph rigidity for near-coplanar structure from motion

Recent algorithms for monocular motion capture (MoCap) estimate weak-perspective camera matrices between images using a small subset of approximately-rigid points on the human body (i.e. the torso and hip). A problem with this approach, however, is that these points are often close to coplanar, causing canonical linear factorisation algorithms for rigid structure from motion (SFM) to become extremely sensitive to noise. In this paper, we propose an alternative solution to weak-perspective SFM based on a convex relaxation of graph rigidity. We demonstrate the success of our algorithm on both synthetic and real world data, allowing for much improved solutions to marker less MoCap problems on human bodies. Finally, we propose an approach to solve the two-fold ambiguity over bone direction using a k-nearest neighbour kernel density estimator.

Intensity pulsations in distributed feedback Yb:Phosphate waveguide lasers

The intensity pulsations of a cw 1030 nm Yb:Phosphate monolithic waveguide laser with distributed feedback are described. We show that the pulsations could result from the coupling of the two orthogonal polarization modes through the two photon process of cooperative luminescence. The predictions of the presented theoretical model agree well with the observed behaviour.

Simulations of the spontaneous emission of a quantum dot near a gap plasmon waveguide

In this paper we modeled a quantum dot at near proximity to a gap plasmon waveguide to study the quantum dot-plasmon interactions. Assuming that the waveguide is single mode, this paper is concerned about the dependence of spontaneous emission rate of the quantum dot on waveguide dimensions such as width and height. We compare coupling efficiency of a gap waveguide with symmetric configuration and asymmetric configuration illustrating that symmetric waveguide has a better coupling efficiency to the quantum dot. We also demonstrate that optimally placed quantum dot near a symmetric waveguide with 50 nm x 50 nm cross section can capture 80% of the spontaneous emission into a guided plasmon mode.

Self-action of high-frequency surface waves in a magnetoactive planar plasma waveguide

The self-modulation process of a high-frequency surface wave (SW) in a wave-guiding structure - a semibounded magnetoactive plasma and perfectly conducting metal wall - is considered for the weak nonlinearity approximation. Estimates are given for the contributions to the nonlinear frequency shift of the SW from the two principal self-action channels: via the generation of a signal of the doubled frequency and of static surface perturbations, arising as the result of the action of a ponderomotive force. Solutions for the field envelope of the nonlinear wave are examined with regard to their stability with respect to longitudinal and transverse perturbations.

Self-interaction of high-frequency surface waves in magnetoactive plasma planar waveguide

The nonlinear effect of hf surface waves self-interaction in a magnetoactive planar plasma waveguide is studies. The waveguide structure under consideration can be formed by gaseous or semiconducting homogeneous plasma, which is limited by a perfectly conducting metal surface. The surface (localized near the surface) wave perturbations propagating on the plasma-metal boundary perpendicular to the constant external magnetic field, are investigated. The nonlinear frequency shift connected with interaction of the second harmonic and static surface perturbations with the main frequency wave, is determined using the approximation of weak nonlinearity. It is shown that the process of double-frequency signal generation is the dissipative one as a result of bulk wave excitation on the surface wave second harmonic.

Parametric excitation of high-frequency surface waves in a plasma-metal waveguide structure

The problem concerning the excitation of high-frequency surface waves (SW) propagating across an external magnetic field at a plasma-metal interface is considered. A homogeneous electric pump field is applied in the direction transverse with respect to the plasma-metal interface. Two high-frequency SW from different frequency ranges of existence and propagating in different directions are shown to be excited in this pump field. The instability threshold pump-field values and increments are obtained for different parameters of the considered waveguide structure. The results associated with saturation of the nonlinear instability due to self-interaction effects of the excited SW are given as well. The results are appropriate for both gaseous and semiconductor plasmas.