Passive mode locking of a diode-end-pumped Nd : GdVO4 laser with a semiconductor saturable absorber mirror

We report an end-pumped and passive mode-locking all-solid-state laser. The laser consists of a Nd:GdVO4 crystal and a linear resonator with a semiconductor saturable absorber mirror that yield mode locking. We achieved stable continuous-wave mode locking with an 8-ps pulse duration at a 154-MHz repetition rate. The average output power was 600 mW with 4 W of pump power. To our knowledge this is the first report of the use of a Nd:GdVO4 crystal for mode locking with a semiconductor saturable absorber mirror. (C) 2003 Optical Society of America.

Low-threshold diode-pumped CW passively mode-locked Nd:YVO4 lase

A low-threshold passively continuous-wave (CW) mode-locked Nd:YVO4 solid-state laser was demonstrated by use of a semiconductor saturable absorber mirror (SESAM). The threshold for continuous-wave mode-locked is relatively low, about 2.15 W. The maximum average output power was 2.12 W and the optical to optical conversion efficiency was about 32%. The pulse width was about 15 ps with the repetition rate of 105 MHz. (C) 2008 Elsevier GmbH. All rights reserved.

880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on SESAM

We report on an 880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on a semiconductor saturable absorber mirror (SESAM) for the first time. When the incident pump power was 16 W, 4.76 W average output power of continuous-wave mode-locked laser with an optical-to-optical conversion efficiency of 30% was achieved. The repetition rate of mode-locked pulse was 80 MHz with 25 ps pulse width. The maximum pulse energy and peak power were 60 nJ and 2.4 kW, respectively.

A novel HPF voltage source rectifier for variable speed refrigeration systems

A novel single-phase voltage source rectifier capable to achieve High-Power-Factor (HPF) for variable speed refrigeration system application, is proposed in this paper. The proposed system is composed by a single-phase high-power-factor boost rectifier, with two cells in interleave connection, operating in critical conduction mode, and employing a soft-switching technique, controlled by a Field Programmable Gate Array (FPGA), associated with a conventional three-phase IGBT bridge inverter (VSI - Voltage Source Inverter), controlled by a Digital Signal Processor (DSP). The soft-switching technique for the input stage is based on zero-current-switching (ZCS) cells. The rectifier's features include the reduction in the input current ripple, the reduction in the output voltage ripple, the use of low stress devices, low volume for the EMI input filter, high input power factor (PF), and low total harmonic distortion (THD) in the input current, in compliance with the EEC61000-3-2 standards. The digital controller for the output stage has been developed using a conventional voltage-frequency control (scalar V/f control), and a simplified stator oriented Vector control, in order to verify the feasibility and performance of the proposed digital controls for continuous temperature control applied at a refrigerator prototype.

Um novo sistema de refrigeração com controle de temperatura, compressor aberto, máquina de indução trifásica com velocidade variável e correção ativa do fator de potência do estágio de entrada

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Conversor para pulsos elétricos de alta tensão, de curta duração, para processos de geração de ozônio

Pós-graduação em Engenharia Elétrica - FEIS

Two stage unity power factor rectifier design

This paper presents the design process utilised for producing a two stage isolated Unity Power Factor (UPF) rectifier. The important yet less intuitive aspects of the design process are highlighted to aid in the simplification of designing a power converter which meets future UPF standards. Two converter designs are presented, a 200W converter utilising a critical conduction controller and a 750W converter based around a continuous conduction controller. Both designs presented were based on the requirements of an audio power amplifier, but the processes apply equally to a range of applications.

Nanoindentation of thin-film-substrate system: Determination of film hardness and Young's modulus

In the present paper, the hardness and Young's modulus of film-substrate systems are determined by means of nanoindentation experiments and modified models. Aluminum film and two kinds of substrates; i.e. glass and silicon, are studied. Nanoindentation XP II and continuous stiffness mode are used during the experiments. In order to avoid the influence of the Oliver and Pharr method used in the experiments, the experiment data are analyzed with the constant Young's modulus assumption and the equal hardness assumption. The volume fraction model (CZ model) proposed by Fabes et al. (1992) is used and modified to analyze the measured hardness. The method proposed by Doerner and Nix (DN formula) (1986) is modified to analyze the measured Young's modulus. Two kinds of modified empirical formula are used to predict the present experiment results and those in the literature, which include the results of two kinds of systems, i.e., a soft film on a hard substrate and a hard film on a soft substrate. In the modified CZ model, the indentation influence angle, phi, is considered as a relevant physical parameter, which embodies the effects of the indenter tip radius, pile-up or sink-in phenomena and deformation of film and substrate.

Thyristors

Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type material (i.e. three p-n junctions) comprising its main power handling section. In contrast to the linear relation which exists between load and control currents in a transistor, the thyristor is bistable. The control terminal of the thyristor, called the gate (G) electrode, may be connected to an integrated and complex structure as a part of the device. Thyristors are used to approximate ideal closed (no voltage drop between anode and cathode) or open (no anode current flow) switches for control of power flow in a circuit. This differs from low-level digital switching circuits that are designed to deliver two distinct small voltage levels while conducting small currents (ideally zero). Thyristor circuits must have the capability of delivering large currents and be able to withstand large externally applied voltages. All thyristor types are controllable in switching from a forward-lockingstate (positive potential applied to the anode with respect to the cathode, with correspondingly little anode current flow) into a forward-conduction state (large forward anode current flowing, with a small anode-cathode potential drop). Most thyristors have the characteristic that after switching from a forward-blocking state into the forward-conduction state, the gate signal can be removed and the thyristor will remain in its forward-conduction mode. This property is termed "latching" and is an important distinction between thyristors and other types of power electronic devices. © 2007 Elsevier Inc. All rights reserved.

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

H桥斩波电源的小信号数学模型及其数字化控制器的实现

A brief summary of H bridge non-isolated DC-DC converter and operation principles is presented in this paper. A small signal model of the ideal converter in continuous current mode is proposed and simulation results of the converter are given. The hardware structure of digital power supply controller based on TMS320F2808 MCU is introduced. 中文摘要：概括了加速器 H 桥非隔离式电源的运行原理与特点，在简化运行方式基础上建立了理想状态下电源连续工作模式的数学模型，并给出了仿真分析结果，介绍了基于 TMS320F2808MCU 实现的数字化电源控制器结构。

A miniaturized fluorescence detector with a windowless flow cell using a light-emitting diode

A miniaturized fluorescence detector using a high-brightness light-emitting diode as an excitation source was constructed and evaluated. A windowless flow cell based on a commercial four-port cross fitting was designed to reduce the stray-light level and to eliminate the optical alignment. The observed detection limit for fluorescein was 26 nM in the continuous-flow mode. The error in the reproducibility of the responses was evaluated by the FIA method, and was found to be within 2% RSD.

地球化学场的多重分形分析与分解

Geochemical and Geophysical anomaly play an important role in mineral exploration，their spatial structure character include singularity and self－similar。The singularity of an anomaly reflects the enrichment characters of the geochemical element ,The anomaly separation by multifractal model is useful in mineral anomaly assessment。In recent years, The continuous multifractal mode of the geochemical fields was studied ,it can be separated into the simple continuous multifractal mode and the high concentration multifractal mode, and the C－A、C－D、 S－A、MSDV、W－A method to decompose the anomaly were presented。Those are succeeded in interpretation of Geochemical and Geophysical anomaly。 This study makes a summarization to these method， we present a multifractal method based on wavelet transform to analyze the multifractal fields 。The singularity and spectrum are calculated through tracing the wavelet maximum modulus in different measure，and then the fields can be decomposed by the characters of the singularity。 It is demonstrated to be useful in interpretation of Au anomaly in Gekou－Shicheng region Rushang Shandong Province 。 Based on the multifractal theory , Using the concentration—area（C—A）method ,We study two geochemical fields in Chifeng area , Inner Mongolia。The results show that the geochemical fields have three different multifractal modes。Based on these ,we discuss the enrichment mode of the geochemical elements and their distributions in space and get the anomaly lower limit ,then the geochemical backgrounds、regional anomalies and local anomalies are distinguished

The dynamics of sustained reentry in a loop model with discrete gap junction resistance

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal.

DCM Boost interleaved converter for operation in AC and DC to trolleybus application

This paper is based on the development and experimental analysis of a DCM Boost interleaved converter suitable for application in traction systems of electrical vehicles pulled by electrical motors (Trolleybus), which are powered by urban DC or AC distribution networks. This front-end structure is capable of providing significant improvements in trolleybuses systems and in the urban distribution network costs, and efficiency. The architecture of proposed converter is composed by five boost power cells in interleaving connection, operating in discontinuous conduction mode. Furthermore, the converter can operate as AC-DC converter, or as DC-DC converter providing the proper DC output voltage range required by DC or AC adjustable speed drivers. Therefore, when supplied by single-phase AC distribution networks, and operating as AC-DC converter, it is capable to provide high power factor, reduced harmonic distortion in the input current, complying with the restrictions imposed by the IEC 61000-3-4 standards. The digital controller has been implemented using a low cost FPGA and developed totally using a hardware description language VHDL and fixed point arithmetic. Thus, two control strategies are evaluated considering the compliance with input current restrictions imposed by IEC 61000-3-4 standards, the regular PWM modulation and a current correction PWM modulation. In order to verify the feasibility and performance of the proposed system, experimental results from a 15 kW low power scale prototype are presented, operating in DC and AC conditions.