122 resultados para Carbonization.


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Carbonization of milk-free coconut kernel pulp is carried out at low temperatures. The carbon samples are activated using KOH, and electrical double-layer capacitor (EDLC) properties are studied. Among the several samples prepared, activated carbon prepared at 600 A degrees C has a large surface area (1,200 m(2) g(-1)). There is a decrease in surface area with increasing temperature of preparation. Cyclic voltammetry and galvanostatic charge-discharge studies suggest that activated carbons derived from coconut kernel pulp are appropriate materials for EDLC studies in acidic, alkaline, and non-aqueous electrolytes. Specific capacitance of 173 F g(-1) is obtained in 1 M H2SO4 electrolyte for the activated carbon prepared at 600 A degrees C. The supercapacitor properties of activated carbon sample prepared at 600 A degrees C are superior to the samples prepared at higher temperatures.

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An innovative technique to obtain high-surface-area mesostructured carbon (2545m(2)g(-1)) with significant microporosity uses Teflon as the silica template removal agent. This method not only shortens synthesis time by combining silica removal and carbonization in a single step, but also assists in ultrafast removal of the template (in 10min) with complete elimination of toxic HF usage. The obtained carbon material (JNC-1) displays excellent CO2 capture ability (ca. 26.2wt% at 0 degrees C under 0.88bar CO2 pressure), which is twice that of CMK-3 obtained by the HF etching method (13.0wt%). JNC-1 demonstrated higher H-2 adsorption capacity (2.8wt%) compared to CMK-3 (1.2wt%) at -196 degrees C under 1.0bar H-2 pressure. The bimodal pore architecture of JNC-1 led to superior supercapacitor performance, with a specific capacitance of 292Fg(-1) and 182Fg(-1) at a drain rate of 1Ag(-1) and 50Ag(-1), respectively, in 1m H2SO4 compared to CMK-3 and activated carbon.

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An innovative technique to obtain high-surface-area mesostructured carbon (2545m(2)g(-1)) with significant microporosity uses Teflon as the silica template removal agent. This method not only shortens synthesis time by combining silica removal and carbonization in a single step, but also assists in ultrafast removal of the template (in 10min) with complete elimination of toxic HF usage. The obtained carbon material (JNC-1) displays excellent CO2 capture ability (ca. 26.2wt% at 0 degrees C under 0.88bar CO2 pressure), which is twice that of CMK-3 obtained by the HF etching method (13.0wt%). JNC-1 demonstrated higher H-2 adsorption capacity (2.8wt%) compared to CMK-3 (1.2wt%) at -196 degrees C under 1.0bar H-2 pressure. The bimodal pore architecture of JNC-1 led to superior supercapacitor performance, with a specific capacitance of 292Fg(-1) and 182Fg(-1) at a drain rate of 1Ag(-1) and 50Ag(-1), respectively, in 1m H2SO4 compared to CMK-3 and activated carbon.

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SiC was grown on Si (100) substrates oriented and off-oriented by 2-5 degrees towards [011] with simultaneous supply of C2H4 and S2H6 at 1050 degrees C. SiC formed during removal of oxide could be removed at 1150 degrees C. Twinned growth occurred on both oriented and off-oriented substrates during carbonization, but fewer twins formed on the off-oriented substrate than that on the oriented substrate. In SiC growth process, twinned growth continued on the off-oriented substrate whereas twinned growth stopped and single crystal SiC with double-domain (2 x 1) superstructure formed on the oriented substrate. SiC single crystal could grow on a carbonized twinned buffer layer. Obvious SiC LO and TO phonon modes were observed with Raman spectroscopy in the epilayer grown on the oriented substrate. The surface of the epilayer grown on the oriented substrate was smooth, while there was a high density of islands on the epilayer grown on the off-oriented substrate. The film grown on the oriented substrate is superior than that grown on the off-oriented substrate. (C) 1999 Elsevier Science B.V. All rights reserved.

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Carbonized buffer layers were formed with C2H4 on Si(100) and Si(111) substrates using different methods and SIC epilayers were grown on each buffer layer at 1050 degrees C with simultaneous supply of C2H4 and Si2H6. The structure of carbonized and epitaxy layers was analyzed with in situ RHEED. The buffer layers formed at 800 degrees C were polycrystalline on both Si(100) and Si(111) substrates whereas they were single crystals, with twins on Si(100) and without tu ins on Si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees C to growth temperature. Raising the substrate temperature slowly results in the formation of more twins. Epilayers grown on carbonized polycrystalline lavers are polycrystalline. Single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (C) 1999 Elsevier Science B.V. All rights reserved.

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The effects of five metal catalysts (K, Na, Ca, Mg, and Fe) on CO2 gasification reactivity of fir char were studied using thermal gravimetric analysis. The degree of carbonization, crystal structure and morphology of char samples was characterized by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The CO2 gasification reactivity of fir char was improved through the addition of metal catalysts, in the order K>Na>Ca>Fe>Mg. XRD analysis indicated that Na and Ca improved the formation of crystal structure, and that Mg enhanced the degree of carbon structure ordering. SEM analysis showed that spotted activation centers were distributed on the surface of char samples impregnated with catalysts. Moreover, a loose flake structure was observed on the surface of both K-char and Na-char. Finally, the kinetic parameters of CO2 gasification of char samples were calculated mathematically.

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Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown on φ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD). The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM). It is shown that the optimized carbonization temperature for the growth of voids-free 3S-SiC on Si (100) substrates is 1100 ℃. The electrical properties of SiC layers are characterized using Van der Pauw method. The I-V, C-V, and the temperature dependence of I-V characteristics in n-3C-SiC-p-Si heterojunctions with AuGeNi and Al electrical pads are investigated. It is shown that the maximum reverse breakdown voltage of the n-3C-SiC-p-Si heterojunction diodes reaches to 220V at room temperature. These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).

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Palladium nanoparticle-loaded carbon nanofibers (Pd/CNFs) were synthesized by the combination of electrospinning and thermal treatment processes. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images show that spherical Pd nanoparticles (NPs) are well-dispersed on the surfaces of CNFs or embedded in CNFs. X-ray diffraction (XRD) pattern indicates that cubic phase of Pd was formed during the reduction and carbonization processes, and the presence of Pd NPs promoted the graphitization of CNFs. This nanocomposite material exhibited high electric conductivity and accelerated the electron transfer, as verified by electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV).

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Effects of organically modified montmorillonites (OMMTs) with different type and amount of modifiers on flame retardancy of polystyrene (PS) have been studied. The results from morphology analysis, gas chromatography-mass spectrometry and cone calorimeter have showed different mechanisms for the flame retardancy of PS/OMMTs composites, depending on surface property of OMNTrs. One is the catalysis of acid sites formed on the surface of octadecylammonium modified MMT (c-MMT) via Hoffman decomposition on the carbonization of degradation products, which promotes the formation of clay-enriched char barrier.