Methodology analysis of a computational tool used in electronic circuit design

This paper considers the importance of using a top-down methodology and suitable CAD tools in the development of electronic circuits. The paper presents an evaluation of the methodology used in a computational tool created to support the synthesis of digital to analog converter models by translating between different tools used in a wide variety of applications. This tool is named MS 2SV and works directly with the following two commercial tools: MATLAB/Simulink and SystemVision. Model translation of an electronic circuit is achieved by translating a mixed-signal block diagram developed in Simulink into a lower level of abstraction in VHDL-AMS and the simulation project support structure in SystemVision. The method validation was performed by analyzing the power spectral of the signal obtained by the discrete Fourier transform of a digital to analog converter simulation model. © 2011 IEEE.

Comparative analysis for reactive energy measurement methodologies, under non-sinusoidal conditions in three-phase four-wire circuits

This paper presents some methodologies for reactive energy measurement, considering three modern power theories that are suitable for three-phase four-wire non-sinusoidal and unbalanced circuits. The theories were applied in some profiles collected in electrical distribution systems which have real characteristics for voltages and currents measured by commercial reactive energy meters. The experimental results are presented in order to analyze the accuracy of the methodologies, considering the standard IEEE 1459-2010 as a reference. Finally, for additional comparisons, the theories will be confronted with the modern Yokogawa WT3000 energy meter and three samples of a commercial energy meter through an experimental setup. © 2011 IEEE.

A Facile Measurement of Heterogeneous Electron Transfer Kinetics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Modeling of piezoelectric energy harvesting considering the dependence of the rectifier circuit

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Electrothermal characterization and nonlinear modelling of GaN transistors for telecommunication circuit design

This thesis starts showing the main characteristics and application fields of the AlGaN/GaN HEMT technology, focusing on reliability aspects essentially due to the presence of low frequency dispersive phenomena which limit in several ways the microwave performance of this kind of devices. Based on an equivalent voltage approach, a new low frequency device model is presented where the dynamic nonlinearity of the trapping effect is taken into account for the first time allowing considerable improvements in the prediction of very important quantities for the design of power amplifier such as power added efficiency, dissipated power and internal device temperature. An innovative and low-cost measurement setup for the characterization of the device under low-frequency large-amplitude sinusoidal excitation is also presented. This setup allows the identification of the new low frequency model through suitable procedures explained in detail. In this thesis a new non-invasive empirical method for compact electrothermal modeling and thermal resistance extraction is also described. The new contribution of the proposed approach concerns the non linear dependence of the channel temperature on the dissipated power. This is very important for GaN devices since they are capable of operating at relatively high temperatures with high power densities and the dependence of the thermal resistance on the temperature is quite relevant. Finally a novel method for the device thermal simulation is investigated: based on the analytical solution of the tree-dimensional heat equation, a Visual Basic program has been developed to estimate, in real time, the temperature distribution on the hottest surface of planar multilayer structures. The developed solver is particularly useful for peak temperature estimation at the design stage when critical decisions about circuit design and packaging have to be made. It facilitates the layout optimization and reliability improvement, allowing the correct choice of the device geometry and configuration to achieve the best possible thermal performance.

Measurement of the drift field in the ARGONTUBE LAr TPC with 266 nm pulsed laser beams

ARGONTUBE is a liquid argon time projection chamber (LAr TPC) with a drift field generated in-situ by a Greinacher voltage multiplier circuit. We present results on the measurement of the drift-field distribution inside ARGONTUBE using straight ionization tracks generated by an intense UV laser beam. Our analysis is based on a simplified model of the charging of a multi-stage Greinacher circuit to describe the voltages on the field cage rings.