Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy (GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72 nm. When the thickness of AlN buffer is 36 nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72 nm.

Reduced dynamics with renormalization in solid-state charge qubit measurement

Quantum measurement will inevitably cause backaction on the measured system, resulting in the well-known dephasing and relaxation. In this paper, in the context of solid-state qubit measurement by a mesoscopic detector, we show that an alternative backaction known as renormalization is important under some circumstances. This effect is largely overlooked in the theory of quantum measurement.

Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

This paper reports that lnAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm(2) has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature

Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750 degrees C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation (C) 1998 Elsevier Science B.V. All rights reserved.

Sub-wavelength beam lasers with surface plasmon structures

The simulation of a plasmonic very-small-aperture laser is demonstrated in this paper. It is an integration of the surface plasmon structure and very-small-aperture laser (VSAL). The numerical results demonstrate that the transmission field can be confined to a spot with subwavelength width in the far field (3.5 mu m far from the emitting surface), and the output power density can be enhanced over 30 times of the normal VSAL. Such a device can be useful in the application of a high resolution far-field scanning optical microscope.

A preliminary study on fingerprinting approach in marine sediment dynamics with the rare earth elements

Locating the quantitized natural sediment fingerprints is an important work for marine sediment dynamics study. The total of 146 sediment samples were collected from the Shelf of the East China Sea and five rivers, including Huanghe (Yellow), Changjiang (Yangtze), Qiantang, Ou and Min River. The sediment grain size and the contents of rare earth elements (REEs) were measured with laser particle size analyzer and ICP-MS technology. The results show that absolute REE content (Sigma REE) and the concentration ratio of light REEs to heavy REEs (L/HREE) are different in the sediments among those rivers. There are higher REE contents in being less than 2 m and 2-31 mu m fractions in the Changjiang Estuary surface sediments. The REE contents of bulk sediment are dominated by the corresponding values of those leading size-fractions. Sigma REE of sediment is higher close to the estuaries and declines seaward on the inner shelf of the East China Sea (ECS). The L/HREE ratio has a tendency of increase southward from 28 degrees N. Hydrodynamic conditions plays a predominate role on spacial distributions of the surficial sediment's REE parameters. In some situations, the currents tend to remove the coarser light grains from initial populations, as well as the deposit of the finer heavy mineral grains. In other situations, the currents will change the ratio of sediment constituents, such as ratio between silts and clays in the sediments. As a result, the various values of Sigma REE or L/HREE ratio in different bulk sediments are more affected by the change of size-fractions than source location. Under the long-term stable hydrodynamic environment, i.e., the East China Sea Shelf, new sediment transport model based on the size and density gradation concept may help to understand the spatial distribution patterns of REE parameters.

Correlated electron-ion dynamics with open boundaries: formalism

We extend a new formalism, which allows correlated electron-ion dynamics to be applied to the problem of open boundary conditions. We implement this at the first moment level (allowing heating of ions by electrons) and observe the expected cooling in the classical part of the ionic kinetic energy and current-induced heating in the quantum contribution. The formalism for open boundaries should be easily extended to higher moments of the correlated electron-ion fluctuations.

Flexure-shear Analysis of Concrete Beam Reinforced with GFRP bars

This paper gives the details of flexure-shear analysis of concrete beams reinforced with GFRP rebars. The influence of vertical reinforcement ratio, longitudinal reinforcement ratio and compressive strength of concrete on shear strength of GFRP reinforced concrete beam is studied. The critical value of shear span to depth ratio (a/d) at which the mode of failure changes from flexure to shear is studied. The fail-ure load of the beam is predicted for various values of a/d ratio. The prediction show that the longitudinally FRP reinforced concrete beams having no stirrups fail in shear for a/d ratio less than 9.0. It is expected that the predicted data is useful for structural engineers to design the FRP reinforced concrete members.

Predicting magnetospheric dynamics with a coupled sun-to-Earth model: challenges and first results

Results from the first Sun-to-Earth coupled numerical model developed at the Center for Integrated Space Weather Modeling are presented. The model simulates physical processes occurring in space spanning from the corona of the Sun to the Earth's ionosphere, and it represents the first step toward creating a physics-based numerical tool for predicting space weather conditions in the near-Earth environment. Two 6- to 7-d intervals, representing different heliospheric conditions in terms of the three-dimensional configuration of the heliospheric current sheet, are chosen for simulations. These conditions lead to drastically different responses of the simulated magnetosphere-ionosphere system, emphasizing, on the one hand, challenges one encounters in building such forecasting tools, and on the other hand, emphasizing successes that can already be achieved even at this initial stage of Sun-to-Earth modeling.