Crystal structure and ionic conductivity of a new bismuth tungstate,Bi3W2O10.5

The compound Bi3W2O10.5 was synthesized by the solid-state technique from Bi2O3 and WO3 in stoichiometric quantities. Single crystals were grown by the melt-cooling technique and the crystal structure was solved in the tetragonal 141in space group with a = 3.839 (1) A, c = 16-3S2 (5) A, V = 241.4 (1) angstrom(3), Z = 4 and was refined to an R index of 0.0672. The structure represents a modification of the Aurivillius phase and consists of [Bi2O2](2+) units separated by WO8 polyhedra. a.c. impedance studies indicate oxide ion conductivity of 2.91 10(-5) cm(-1) at 600 degrees C.

High-temperature superconductivity in bismuth-copper oxides of the type BimMnCupOx (M=Mg, Ca, Sr, Ba, Bi)

Several oxides of the Bi m M n Cu p O x family (m=2, 3;n=2, 3, 4;p=1, 2, 3 and M=alkaline earth or Bi), possessing structures similar to the Aurivillius family of oxides, show highT c superconductivity.

Structural, optical and electrical characteristics of transparent bismuth vanadate films deposited on indium tin oxide coated glass substrates

Bismuth vanadate (BVO) thin films were fabricated on indium tin oxide (ITO) coated glass substrates using pulsed laser ablation technique and investigated their structural, optical and electrical properties. The use of the indium tin oxide coated glass substrate resulted in reducing the leakage current characteristics of crystalline BVO thin films. The X-ray diffraction (XRD) studies confirmed the monophasic nature of the post annealed (500 A degrees C/1 h) films. The atomic force microscopy indicated the homogeneous distribution of crystallites in the as-deposited films. The as-deposited and the post annealed films were almost 90% transparent (380-900 nm) as confirmed by optical transmission studies. Dielectric constant of around 52 was attained accompanied by the low dielectric loss of 0.002 at 10 kHz for post annealed films. The leakage current of the post annealed BVO films on ITO coated glass substrates measured at room temperature was 8.1 x 10(-8) A at an applied electric field of 33 kV/cm, which was lower than that of the films with platinum and SrRuO3 as the bottom electrodes.

Impurity diffusion in bismuth single-crystals

Measurements of impurity diffusion of 86Rb, 90Sr, 133Ba, and 137Cs in single crystal Bi were carried out. Diffusion samples were prepared from single crystal Bi by ion implantation. About 1012-1013 ions were implanted, resulting in surface activities approx =104 cpm. After implantation, specimens were annealed for specified times at 220-265 deg C, and tracer penetration profiles were determined by an electrolytic method. A typical penetration profile for 137Cs in Bi showed a linear relationship for log C vs x in with Fick's law for volume diffusion. Laws of grain boundary diffusion were not obeyed and the order of magnitude of the penetration distances was much less than on a grain boundary mechanism. Results were interpreted in terms of a modified Fischer analysis using a kinetic trapping term. Effective half lengths for trapping at a twin boundary were determined for each impurity.

Dielectric relaxation in bismuth layer-structured BaBi4Ti4O15 ferroelectric ceramics

The dielectric properties of BaBi4Ti4O15 ceramics were investigated as a function of frequency (10(2)-10(6) Hz) at various temperatures (30 degrees C-470 degrees C), covering the phase transition temperature. Two different conduction mechanisms were obtained by fitting the complex impedance data to Cole-Cole equation. The grain and grain boundary resistivities were found to follow the Arrhenius law associated with activation energies: E-g similar to 1.12 eV below T-m and E-g similar to 0.70 eV above T-m for the grain conduction; and E-gb similar to 0.93 eV below T-m and E-gb similar to 0.71 eV above T-m for the grain boundary conduction. Relaxation times extracted using imaginary part of complex impedance Z `'(omega) and modulus M `'(omega) were also found to follow the Arrhenius law and showed an anomaly around the phase transition temperature. The frequency dependence of conductivity was interpreted in terms of the jump relaxation model and was fitted to the double power law. (C) 2010 Elsevier B. V. All rights reserved.

Occurrence of maximum Tc at an optimal carrier concentration in superconducting bismuth and thallium cuprates

The superconducting transition temperatures in Bi2Ca1−xLnxSr2Cu2O8+δ, TlCa1−xLnxSr2Cu2O6+δ, and Tl0.8Ca1−xLnxBa2Cu23O6+δ (Ln=Y or rare earth) vary with composition and show a maximum at a specific value of x or δ. This observation suggests that an optimal carrier concentration is required to attain maximum Tc in such cuprates which seem to be two‐band systems

A study of cubic bismuth oxides of the type bi(26-X)m(X)O(40-delta) (m=ti, mn, fe, co, ni or pb) related to gamma-bi2O3

A structural investigation of cubic oxides (space group I23) of the formula Bi(26-x)M(x)O(40-delta) (M = Ti, Mn, Fe, Co, Ni and Pb) related to the Y-Bi2O3 phase has been carried out by the Rietveld profile analysis of high-resolution X-ray powder diffraction data in order to establish the cation distributions. Compositional dependence of the cation distribution has been examined in the case of Bi26-xCoxO40-delta (1 < x < 16). The study reveals that in Bi(26-X)M(X)O(40-delta) with M = Ti, Mn, Fe, Co or Pb, the M cations tend to occupy tetrahedral (2a) sites when x < 2 while the octahedral (24f) sites are shared by the excess Co or Ni cations with Bi atoms when x > 2. Also experimental magnetic moments of Mn, Co and Ni derivatives have been used to establish the valence state and distribution of these cations.

Low-temperature synthesis of bismuth cuprates

A low temperature aqueous solution preparation under strong alkaline medium is reported for the synthesis of bismuth cuprates. Highly crystalline products were obtained at temperatures around 90 degrees C. Tetragonal Bi2CuO4 appears to be the only stable phase formed in the Bi-Cu-O system under these conditions.

Synthesis and studies on pyridinium chlorofluoro complexes of indium and bismuth

Pyridinium trichlorotrifluoroindate, (C5H5NH)(3)InCl3F3, and pyridinium trichlorofluorobismuthate, C5H5NHBiCl3F, have been synthesised by the reaction of pyridinium poly(hydrogen fluoride), PPHF, with InCI3 and BiCl3, respectively. These new complexes have been characterised by chemical and thermal analysis, NMR (H-1 and F-19) and infrared spectroscopy, and powder X-ray diffraction methods

Microstructural and dielectric properties of KCl-added bismuth vanadate ceramics

The effect of KCI addition on the microstructural, structural and dielectric properties of bismuth vanadate, Bi2VO5.5 (BiV) has been examined. The average grain size of BN ceramics increases with increase in KCl content (from an average grain size of TO to 80 mu m) as a result of the increased liquid-phase formation of KCI, at the grain boundaries. Differential scanning calorimetry (DSC) carried out on the KCl-added samples indicates an upward shift in the transition temperature (T-c), from 723 K (for BN) to 734 K (for 5 mol% KCl-added BiV). On further increase in the KCI content, T-c shifts down to about 722 K for 10 mol%. This trend is consistent with that of the lattice strain data. The relative permittivity as well as the dielectric loss decrease by more than half of the original values upon the addition of KCI. The relative permittivities of the KCl-added ceramics are comparable with the values predicted by the logarithmic mixture rule. Impedance analyses suggest that the grain boundary resistance of the KCl-added BiV ceramics is higher by two orders of magnitude than that of BN ceramics. The KCl-added BN ceramics exhibit ferroelectric domains and the domain density decreases as the grain boundary region is approached.

Mechanically activated synthesis of nanocrystalline powders of ferroelectric bismuth vanadate

Mechanical milling of a stoichiometric mixture of Bi2O3 and V2O5 yielded nanosized powders of bismuth vanadate, Bi2VO5.5 (BN). Structural evolution of the desired BiV phase, through an intermediate product (BiVO4), was monitored by subjecting the powders, ball milled for various durations to X-ray powder diffraction (XRD), differential thermal analysis (DTA), and transmission electron microscopic (TEM) studies. XRD studies indicate that the relative amount of the BiV phase present in the ball-milled mixture increases with increase in milling time and its formation reaches completion within 54 h of milling. Assynthesized powders were found to stabilize in the high-temperature tetragonal (gamma) phase. DTA analyses of the powders milled for various durations suggest that the BN phase-formation temperature decreases with increase in milling time. The nanometric size (30 nm) of the crystallites in the final product was confirmed by TEM and XRD studies. TEM studies clearly demonstrate the growth of BiV on Bi2O3 crystallites. (C) 1999 Academic Press.

Preparation and characterization of nanocrystalline powders of bismuth vanadate

The influence of mechanical activation on the formation of Bi2VO5.5 bismuth vanadate (BiV) phase, was investigated by ball-milling a stoichiometric mixture of bismuth oxide and vanadium pentoxide. The structural evolution of the desired BN phase, via an intermediate BiVO4,phase, was investigated using X-ray powder diffraction; (XRD), differential thermal analysis (DTA) and transmission electron microscopy (TEM). Milling for 54h. yielded monophasic gamma-BiV powders with an average crystallite size of 30 nm. The electron paramagnetic resonance (EPR) peaks associated with the V4+ ions are stronger and broader in nanocrystalline (n) BN than in the conventionally prepared microcrystalline (m) BN, suggesting theta significant portion of V5+ has been transformed to V4+ during milling. The optical bandgap of n-BiV was found to be higher than that of m-BiV. High density (97% of the theoretical density), fine-grained (average grain-size of 2 tun) ceramics with uniform grain-size distribution could be fabricated using n-BiV powders. These fine-grained ceramics exhibit improved dielectric, pyre and ferroelectric properties. (C) 1999 Elsevier Science S.A. All rights reserved.

Structural, dielectric and optical properties of lithium borate-bismuth tungstate glass-ceramicsc

Glasses in the system (1 - x)Li2B4O7-xBi(2)WO(6) (0.1 less than or equal to x less than or equal to 0.35) were prepared by splat quenching technique. Powder X-ray diffraction (XRD) and differential thermal analysis (DTA) were employed to characterize the as-quenched glasses. High-resolution transmission electron microscopy (HR TEM) revealed the presence of fine, nearly spherical crystallites of Bi2WO6 varying from 1.5 to 20 nm in size, depending on x in the as-quenched glasses. The glasses (corresponding to x = 0.3) heat-treated at 723 K for 6 h gave rise to a clear crystalline phase of Bi2WO6 embedded in the Li2B4O7 glass matrix, as observed by X-ray studies. The dielectric constants of the as-quenched glasses as well as the glass-ceramics decreased with increase in frequency (40Hz-100 kHz) at 300 K, and the value obtained for the glass-ceramic (x = 0.2) is in agreement with the values predicted using Maxwell's model and the logarithmic mixture rule. The dielectric constants for both the as-quenched glass and the glass-ceramic increased with increase in temperature (300 - 873 K) and exhibited anomalies close to the onset of the crystallization temperature of the host glass matrix. The optical transmission properties:of these glass-ceramics were found to be compositional dependant. (C) 2000 Elsevier Science Ltd.