抗对虾白斑综合症病毒的单链抗体A1的表达和生物化学特性

用噬菌体展示技术制备了抗对虾白斑综合症病毒(WSSV)的单链抗体A1。该抗体在30℃培养条件下诱导表达20h后,其蛋白表达量可达总菌体蛋白的3.67%。用亲和层析柱和SephadexG-100层析柱可将单链抗体A1纯化为一条单电泳条带,其分子量约为31.5kD。用等电聚焦电泳测定,其等电点为pH5.8。ELISA测定表明冻干的单链抗体A1在室温储藏4年后与WSSV结合仍具有较高的活力。

抗对虾白斑综合症病毒单链抗体A1基因在酵母中表达及其与抗原结合活性

通过PCR从噬菌粒载体上扩增一种抗对虾白斑综合症病毒 (WSSV)的单链抗体A1(ScFvA1)基因 ,并构建于大肠杆菌 酵母穿梭质粒载体pPIC9K上。经PCR ,酶切 ,测序鉴定重组克隆 ,发现重组成功。将重组质粒pPIC9K ScF vA1转化毕赤酵母 (Pichiapastoris)GS115中 ,利用甲醇诱导 ,将单链抗体A1在酵母中进行了初步表达。经SDS PAGE电泳 ,发现其大小约为 32KD ,通过ELISA实验 ,证明表达上清液中的单链抗体具有很高的WSSV结合活性。

Spray flame structure of rapeseed biodiesel and Jet-A1 fuel

The spray combustion characteristics of rapeseed methyl esters (RME) were compared to Jet-A1 fuel using a gas turbine type combustor. The swirling spray flames for both fuels were established at a constant power output of 6 kW. The main swirling air flow was preheated to 350 C prior to coaxially enveloping the airblast-atomized liquid fuel spray at atmospheric pressure. Investigation of the fundamental spray combustion was performed via measurements of the fuel droplet sizes and velocities, gas phase flow fields and flame reaction zones. The spray flame droplets and flow fields in the combustors were characterised using phase Doppler anemometry (PDA) and particle imaging velocimetry (PIV) respectively. Flame chemiluminescence imaging was employed to identify the flame reaction zones. The highest droplet concentration zone extends along a 30 angle from the symmetry axis, inside the flame zone. Only small droplets(<17 μ) (<17 μm)are found around the centreline region, while larger droplets are found at the edge of the spray outside the flame reaction zone. RME exhibits spray characteristics similar to Jet-A1 but with droplet concentration and volume fluxes four times higher, consistent with the expected longer droplet evaporation timescale. The flow field characteristics for both RME and Jet-A1 spray flames are very similar despite the significantly different visible characteristics of the flame reaction zones. © 2013 Elsevier Ltd. All rights reserved.

Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE

Al0.58Ga0.42N epilayers are grown by ammonia gas source molecular beam epitaxy (NH3-MBE) on (0001) sapphire substrate using AlGaN buffer layer. The effects of the buffer layer growth temperature on the properties of Al0.58Ga0.42N epilayer are especially investigated. In-situ high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM), photoconductivity measurement and cathodoluminescence (CL) are used to characterize the samples. It is found that high growth temperature of AlGaN buffer layer would improve the crystalline quality, surface smoothness, optical quality and uniformity of the Al0.58Ga0.42N epilayer. The likely reason for such improvements is also suggested. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim