Nonlinear I-V characteristics of senmiconducting paints

The oxide-based high resistivity semiconducting Paints can be used on high voltage insulators for improved performance. They were found to exhibit nonlinear I-V characteristics which are reported here. The paints exhibited power law relationship and a sharp transition in merhanism of conduction at a critical voltage.

Nonlinear I-V characteristics of nanocrystalline SnO2

Current versus voltage characteristics (I-V) of nanocrystalline SnO2 materials have been investigated in air at room temperature. The samples were prepared by the inert gas condensation technique (IGCT) as well as by chemical methods. X-ray diffraction studies showed a tetragonal rutile structure for all the samples. Microstructural studies were performed with transmission electron microscopy. All the samples exhibited nonlinear I-V characteristics of the current-controlled negative resistance (CCNR) type. The results show that the threshold field (break down) voltage is higher for the samples prepared by the IGCT method than for those prepared by the chemical method due to the formation of a tin oxide layer over the crystalline tin. It is also found that the threshold field increases with the decrease in grain size.

A simple low-cost electrical switching analyzer for I-V characterization of switching samples and devices

The phenomena of nonlinear I-V behavior and electrical switching find extensive applications in power control, information storage, oscillators, etc. The study of I-V characteristics and switching parameters is necessary for the proper application of switching materials and devices. In the present work, a simple low-cost electrical switching analyzer has been developed for the measurement of the electrical characteristics of switching materials and devices. The system developed consists of a microcontroller-based excitation source and a high-speed data acquisition system. The design details of the excitation source, its interface with the high-speed data acquisition system and personal computer, and the details of the application software developed for automated measurements are described. Typical I-V characteristics and switching curves obtained with the system developed are also presented to illustrate the capability of the instrument developed.

Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition

Substantial amount of fixed charge present in most of the alternative gate dielectrics gives rise to large shifts in the flat-band voltage (VFB) and charge trapping and de-trapping causes hysterectic changes on voltage cycling. Both phenomena affect stable and reliable transistor operation. In this paper we have studied for the first time the effect of post-metallization hydrogen annealing on the C-V curve of MOS capacitors employing zirconia, one of the most promising gate dielectric. Samples were annealed in hydrogen ambient for up to 30 minutes at different temperatures ranging from room temperature to 400°C. C-V measurements were done after annealing at each temperature and the hysteresis width was calculated from the C-V curves. A minimum hysteresis width of ∼35 mV was observed on annealing the sample at 200°C confirming the excellent suitability of this dielectric

Voltage stability : some reflections on Q-V characteristics of loads

Considering voltage stability as a static viability problem, this paper takes a particular concern of Q-V characteristics and reflects on certain notions that do not seem to have been explicitly mentioned or derived in the existing documented literature. The equations of Q-V characteristics are rederived in exactness, some salient points on the curve are discovered and analysed. The results of the analysis are illustrated through a case study

Novel Rearrangements in the Staphylococcal Cassette Chromosome Mec Type V Elements of Indian ST772 and ST672 Methicillin Resistant Staphylococcus aureus Strains

Staphylococcus aureus is a commensal gram positive bacteria which causes severe and non severe infections in humans and livestock. In India, ST772 is a dominant and ST672 is an emerging clone of Staphylococcus aureus. Both cause serious human diseases, and carry type V SCCmec elements. The objective of this study was to characterize SCCmec type V elements of ST772 and ST672 because the usual PCR methods did not amplify all primers specific to the type. Whole genome sequencing analysis of seven ST772 and one ST672 S. aureus isolates revealed that the SCCmec elements of six of the ST772 isolates were the smallest of the extant type V elements and in addition have several other novel features. Only one ST772 isolate and the ST672 isolate carried bigger SCCmec cassettes which were composites carrying multiple ccrC genes. These cassettes had some similarities to type V SCCmec element from M013 isolate (ST59) from Taiwan in certain aspects. SCCmec elements of all Indian isolates had an inversion of the mec complex, similar to the bovine SCCmec type X. This study reveals that six out of seven ST772 S. aureus isolates have a novel type V (5C2) SCCmec element while one each of ST772 and ST672 isolates have a composite SCCmec type V element (5C2&5) formed by the integration of type V SCCmec into a MSSA carrying a SCC element, in addition to the mec gene complex inversions and extensive recombinations.

De condes a reyes : los señores de Champaña herederos del reino de Navarra (1234)

Resumen: En el presente estudio consideramos los diversos aspectos de la crisis que vivió el reino de Navarra en 1234, a la muerte del rey Sancho VII, sin herederos directos legítimos. Centramos el análisis en los siguientes aspectos: 1) la decisión real de un acuerdo de prohijamiento mutuo con el rey de Aragón y la voluntad de los señores del reino de hacer prevalecer la sucesión legítima en defensa de la integridad y soberanía del reino; 2) la valoración del desarrollo experimentado en el condado de Champaña y su presencia en el reino de Francia; 3) la entronización de Teobaldo I en el reino de Navarra y el estudio de los aspectos significativos de su acción de gobierno desarrollada en los campos: legislativo, administrativo y social.

AMPS modeling of light J-V characteristics of a-Si based solar cells

AMPS (Analysis of microelectronic and photonic structures) mode,which was developed by Pennsylvania State University, has been used to module the light J-V characteristics of a-Si solar cells with a structure of TCO/p-a-SiC:H/i-a-Si:H/n-a-Si:H/ metal. The effects of valence band offset and contact barriers at p/i and TOC/p, n/metal interfaces on the light J-V characteristics have been examined. The modeling has qualitatively categorized and explained the non-ideal J-V behaviors (rollover, crossover, Voc shift,and rollunder) observed in a-Si based solar cells.

Cure processing modeling and cure cycle simulation of epoxy-terminated poly(phenylene ether ketone). V: Estimation of temperature distribution during cure process

A numerical method to estimate temperature distribution during the cure of epoxy-terminated poly(phenylene ether ketone) (E-PEK)-based composite is suggested. The effect of the temperature distribution on the selection of cure cycle is evaluated using a suggested alternation criterion. The effect of varying heating rate and thickness on the temperature distribution, viscosity distribution and distribution of the extent of cure reaction are discussed based on the combination of the here-established temperature distribution model and the previously established curing kinetics model and chemorheological model. It is found that, for a thin composite (<=10mm) and low heating rate (<=2.5K/min), the effect of temperature distribution on cure cycle and on the processing window for pressure application can be neglected. Low heating rate is of benefit to reduce the temperature gradient. The processing window for pressure application becomes narrower with increasing thicknesses of composite sheets. The validity of the temperature distribution model and the modified processing window is evaluated through the characterization of mechanical and physical properties of E-PEK-based composite fabricated according to different temperature distribution conditions.

Annotation of Case C-375/92, Commission v Kingdom of Spain, ECR 1994 I-923, and Case C-45/93, Commission v Kingdom of Spain, ECR 1994 I-911

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