967 resultados para Abstraction layers


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Among the many meanings of abstraction is the focus on images that are at a distance from their origins. This understanding of abstraction is central to Savanhdary Vongpoothorn’s layered, textured and sensuous canvas Crossing (2003). The references in this painting to Laotian textile design and creation endows it with the sense of a fabric-like nature, gives it the feel of cloth wrapped around bodies and of threads woven into complex symmetrical patterns. Here, the distance from origins is expressed as a separation from the material forms of Lao culture. At the same time the work is a visual reference to the stretching or bending of forms, the breaking up of shapes in the natural or constructed environment, all of which create an expressive effect through the warm rose grid and visual illusions of movement and travel. This visual play suggests the sense that migration or movement is a means through which cultural forms get recoded and translated. The making of Crossing like many of Savanhdary’s works involved manipulation of the canvas through pricking and poking, and then the application of layers and dots of paint. The overall effect is one of a synthesis of different cultural motifs and the addition of new dimensions to familiar forms. This highlights the centrality of the idea of 'reassemblage’ in abstraction, the processes of remaking of self, of the natural world and of cultural artefacts. Savanhdary constructs intricate laced knots of colour and texture in work which expresses the possibilities presented by travel, migration and the subsequent remixture that emerges upon crossing through different cultural worlds.

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Semiconductor nanowires (NWs) show tremendous applications in micro/nano-electro-mechanical systems. In order to fulfill their promising applications, an understanding of the mechanical properties of NWs becomes increasingly important. Based on the large-scale molecular dynamics simulations, this work investigated the tensile properties of Si NWs with different faulted stacking layers. Different faulted stacking layers were introduced around the centre of the NW by the insertion or removal of certain stacking layers, inducing twins, intrinsic stacking fault, extrinsic stacking fault, and 9R crystal structure. Stress–strain curves obtained from the tensile deformation tests reveal that the presence of faulted stacking layers has induced a considerable decrease to the yield strength while only a minor decrease to Young's modulus. The brittle fracture phenomenon is observed for all tested NWs. In particular, the formation of a monatomic chain is observed for the perfect NW, which exists for a relatively wide strain range. For the defected NW, the monatomic chain appears and lasts shorter. Additionally, all defected NWs show a fracture area near the two ends, in contrast to the perfect NW whose fracture area is adjacent to the middle. This study provides a better understanding of the mechanical properties of Si NWs with the presence of different faulted stacking layers.

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Faulted stacking layers are ubiquitously observed during the crystal growth of semiconducting nanowires (NWs). In this paper, we employ the reverse non-equilibrium molecular dynamics simulation to elucidate the effect of various faulted stacking layers on the thermal conductivity (TC) of silicon (Si) NWs. We find that the stacking faults can greatly reduce the TC of the Si NW. Among the different stacking faults that are parallel to the NW's axis, the 9R polytype structure, the intrinsic and extrinsic stacking faults (iSFs and eSFs) exert more pronounced effects in the reduction of TC than the twin boundary (TB). However, for the perpendicularly aligned faulted stacking layers, the eSFs and 9R polytype structures are observed to induce a larger reduction to the TC of the NW than the TB and iSFs. For all considered NWs, the TC does not show a strong relation with the increasing number of faulted stacking layers. Our studies suggest the possibility of tuning the thermal properties of Si NWs by altering the crystal structure via the different faulted stacking layers.

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Twitter is used for a range of communicative purposes. These extend from personal tweets that address what used to be Twitter’s default question, “What’s happening?”, through one-on-one @reply conversations between close friends and attempts at getting the attention of celebrities and other public actors, to discussions in communities built around specific issues—and back again to broadcast-style statements from well-known individuals and brands to their potentially very large retinue of followers.

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Drawing on the fields of philosophy, phenomenology, art history and theory as well as the candidate's own painting practice, this PhD explores the nature of ambiguity and semiosis in contemporary abstract painting. The thesis demonstrates how the aesthetic qualities of pause and rupture, transition and slippage work emergently to break established clichés, habits and intentions in the experiencing of abstract painting and artistic practice.

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Software engineers constantly deal with problems of designing, analyzing, and improving process specifications, e.g., source code, service compositions, or process models. Process specifications are abstractions of behavior observed or intended to be implemented in reality which result from creative engineering practice. Usually, process specifications are formalized as directed graphs in which edges capture temporal relations between decisions, synchronization points, and work activities. Every process specification is a compromise between two points: On the one hand engineers strive to operate with less modeling constructs which conceal irrelevant details, while on the other hand the details are required to achieve the desired level of customization for envisioned process scenarios. In our research, we approach the problem of varying abstraction levels of process specifications. Formally, developed abstraction mechanisms exploit the structure of a process specification and allow the generalization of low-level details into concepts of a higher abstraction level. The reverse procedure can be addressed as process specialization.

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In order to execute, study, or improve operating procedures, companies document them as business process models. Often, business process analysts capture every single exception handling or alternative task handling scenario within a model. Such a tendency results in large process specifications. The core process logic becomes hidden in numerous modeling constructs. To fulfill different tasks, companies develop several model variants of the same business process at different abstraction levels. Afterwards, maintenance of such model groups involves a lot of synchronization effort and is erroneous. We propose an abstraction technique that allows generalization of process models. Business process model abstraction assumes a detailed model of a process to be available and derives coarse-grained models from it. The task of abstraction is to tell significant model elements from insignificant ones and to reduce the latter. We propose to learn insignificant process elements from supplementary model information, e.g., task execution time or frequency of task occurrence. Finally, we discuss a mechanism for user control of the model abstraction level – an abstraction slider.

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Real world business process models may consist of hundreds of elements and have sophisticated structure. Although there are tasks where such models are valuable and appreciated, in general complexity has a negative influence on model comprehension and analysis. Thus, means for managing the complexity of process models are needed. One approach is abstraction of business process models-creation of a process model which preserves the main features of the initial elaborate process model, but leaves out insignificant details. In this paper we study the structural aspects of process model abstraction and introduce an abstraction approach based on process structure trees (PST). The developed approach assures that the abstracted process model preserves the ordering constraints of the initial model. It surpasses pattern-based process model abstraction approaches, allowing to handle graph-structured process models of arbitrary structure. We also provide an evaluation of the proposed approach.

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Companies use business process models to represent their working procedures in order to deploy services to markets, to analyze them, and to improve upon them. Competitive markets necessitate complex procedures, which lead to large process specifications with sophisticated structures. Real world process models can often incorporate hundreds of modeling constructs. While a large degree of detail complicates the comprehension of the processes, it is essential to many analysis tasks. This paper presents a technique to abstract, i.e., to simplify process models. Given a detailed model, we introduce abstraction rules which generalize process fragments in order to bring the model to a higher abstraction level. The approach is suited for the abstraction of large process specifications in order to aid model comprehension as well as decomposing problems of process model analysis. The work is based on process structure trees that have recently been introduced to the field of business process management.

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Process models provide companies efficient means for managing their business processes. Tasks where process models are employed are different by nature and require models of various abstraction levels. However, maintaining several models of one business process involves a lot of synchronization effort and is erroneous. Business process model abstraction assumes a detailed model of a process to be available and derives coarse grained models from it. The task of abstraction is to tell significant model elements from insignificant ones and to reduce the latter. In this paper we argue that process model abstraction can be driven by different abstraction criteria. Criterion choice depends on a task which abstraction facilitates. We propose an abstraction slider - a mechanism that allows user control of the model abstraction level. We discuss examples of combining the slider with different abstraction criteria and sets of process model transformation rules.

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As printed and flexible plastic electronic gadgets become increasingly viable today, there is a need to develop materials that suit the fabrication processes involved. Two desirable requirements are solution-processable active materials or precursors and low-temperature processability. In this article, we describe a straightforward method of depositing ZnO films by simple spin coating of an organometallic diethylzinc precursor solution and annealing the resulting film at low temperatures (≤200 °C) without involving any synthetic steps. By controlling the humidity in which annealing is conducted, we are able to adjust the intrinsic doping level and carrier concentration in diethylzinc-derived ZnO. Doped or conducting transport layers are greatly preferable to undoped layers as they enable low-resistance contacts and minimize the potential drops. This ability to controllably realize doped ZnO is a key feature of the fabrication process that we describe in this article. We employ field-effect measurements as a diagnostic tool to measure doping levels and mobilities in ZnO and demonstrate that doped ZnO with high charge carrier concentration is ideal for solar cell applications. Respectable power conversion efficiencies (up to 4.5%) are achieved in inverted solar cells that incorporate diethylzinc-derived ZnO films as the electron transport layer and organic blends as the active material. Extensions of this approach to grow ternary and quaternary films with organometallic precursor chemicals will enable solution based growth of a number of semiconductor films as well as a method to dope them.

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In this paper, we study the Einstein relation for the diffusivity to mobility ratio (DMR) in n-channel inversion layers of non-linear optical materials on the basis of a newly formulated electron dispersion relation by considering their special properties within the frame work of k.p formalism. The results for the n-channel inversion layers of III-V, ternary and quaternary materials form a special case of our generalized analysis. The DMR for n-channel inversion layers of II-VI, IV-VI and stressed materials has been investigated by formulating the respective 2D electron dispersion laws. It has been found, taking n-channel inversion layers of CdGeAs2, Cd(3)AS(2), InAs, InSb, Hg1-xCdxTe, In1-xGaxAsyP1-y lattice matched to InP, CdS, PbTe, PbSnTe, Pb1-xSnxSe and stressed InSb as examples, that the DMR increases with the increasing surface electric field with different numerical values and the nature of the variations are totally band structure dependent. The well-known expression of the DMR for wide gap materials has been obtained as a special case under certain limiting conditions and this compatibility is an indirect test for our generalized formalism. Besides, an experimental method of determining the 2D DMR for n-channel inversion layers having arbitrary dispersion laws has been suggested.

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Uniformity in bias tilt, for the polyvinyl alcohol(PVA)surface layer induced orientation of nematic liquid crystals, could be achieved for large area display panels, if one of the transparent electrodes is first directionally rubbed with fine abrasive; then both the electrodes coated with PVA, followed by directionally buffing the chemisorbed layers in the same direction. Uniformity may be due to increased 'train' configuration of the adsorbed macromolecule by falling on to microgrooves and maintaining the same sense of asymmetry for the looped segments.

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Results are reported from an extensive series of experiments on boundary layers in which the location of pressure gradient and transition onset could be varied almost independently, by judicious use of tunnel wall liners and transition-fixing devices. The experiments show that the transition zone is sensitive to the pressure gradient especially near onset, and can be significantly asymmetric; no universal similarity appears valid in general. Observed intermittency distributions cannot be explained on the basis of the hypothesis, often made, that the spot propagates at speeds proportional to the local free-stream velocity but is otherwise unaffected by the pressure gradient.

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All the second-order boundary-layer effects have been studied for the steady laminar compressible 3-dimensional stagnation-point flows with variable properties and mass transfer for both saddle and nodal point regions. The governing equations have been solved numerically using an implicit finite-difference scheme. Results for the heat transfer and skin friction have been obtained for several values of the mass-transfer rate, wall temperature, and also for several values of parameters characterizing the nature of stagnation point and variable gas properties. The second-order effects on the heat transfer and skin friction at the wall are found to be significant and at large injection rates, they dominate over the results of the first-order boundary layer, but the effect of large suction is just the opposite. In general, the second-order effects are more pronounced in the saddle-point region than in the nodal-point region. The overall heat-transfer rate for the 3-dimensional flows is found to be more than that of the 2-dimensional flows.