916 resultados para AU(111) SURFACE


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在Au(111)硫醇自组装膜上通过原子力显微镜(AFM)纳米刻蚀加工了各种功能化纳米结构。本论文取得的主要成果如下: 1. “蘸笔”技术移除自组装膜及金基底 以烯丙基溴为墨水,用蘸笔技术在16-巯基十六羧酸(MHA)修饰的Au(111)基底上可以实现对金基底的直接加工,形成阴刻图案;并提出了详细的加工机理。 2. Au(111)自组膜表面的可逆加工 (1)利用乙醇修饰的导电AFM针尖通过电致刻蚀在Au(111)基底的烷基硫醇自组装膜上实现了阴阳刻图案的可逆加工。X射线光电子能谱分析表明阳刻图案的化学组成为氧化金,且此氧化金可被乙醇还原生成金得到阴刻图案。此阴刻图案可用作纳米模板,我们利用此模板加工了氧化铁磁性纳米结构和溶菌酶蛋白质纳米结构。 (2)用修饰硫醇的导电AFM针尖在Au(111)基底上实现了硫醇的可逆书写。 3. Au(111)自组膜表面官能团转化 用硫醇自组装膜修饰的Pt针在Au(111)基底的烷基硫醇自组装膜上实现了表面端基官能团转化。所得亲水性纳米图案可用作物理(如直接吸附纳米粒子)和化学纳米模板(如诱导硅烷自组装)。加工过程中基底自组装膜保持完整,未破坏Au-S键。 4. AFM研究适配子与血小板衍生生长因子-BB的相互作用 利用AFM电致刻蚀在HS-(CH2)12-(OCH2CH2)4-OH(EG4)/Au(111)上选择性移除EG4,在新暴露的金基底上生长血小板衍生生长因子-BB(PDGF-BB)适配子与EG4的混合自组装膜,通过PDGF-BB适配子与 PDGF-BB的特异性键合固定PDGF-BB,得到PDGF-BB的纳米图案。

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本论文利用扫描隧道显微镜(STM)在Au(111)电极上结合电化学方法在分子水平上观察分子的吸附组装和结构调控等。主要内容如下: (1) 用现场电化学扫描隧道显微镜(ECSTM)在Au(111)电极上研究了巯基己醇(MHO)取代六苯并苯的详细过程。取代速度强烈依赖于MHO的浓度。浓度较低时,反应速度较慢,我们可以用现场ECSTM跟踪观察详细的取代过程。取代首先发生在靠近重构线肘部的位置,出现单分子或多个六苯并苯分子的取代而形成的pits。随着取代过程的进行,这些小的pits生长或合并成较大的pits;pits周围的六苯并苯分子逐渐被MHO取代,最终在限定的区域内形成有序的domain。观察局部区域的取代过程,我们发现沿着重构线的方向扩展速度最快。快速取代之后,MHO在Au(111)电极表面形成( )R30°晶格结构,而慢速取代之后,MHO在表面形成c(4×2)超结构。与MHO在干净的Au(111)电极上的吸附相比,在六苯并苯修饰的Au(111)电极上即使在很低的浓度下也没有观察到平躺的物理吸附相,而是直接形成化学吸附相。这可能是由于六苯并苯的存在,MHO的碳氢链不能直接与Au原子接触。通过数据分析,我们发现取代速率曲线呈倒S形状。 (2) 我们用循环伏安法(CV)和ECSTM研究了腺嘌呤(Adenine,A),胸腺嘧啶(Thymine,T)和鸟嘌呤(Guanine,G)单组分及混合组分(A+T)的电化学二维相变。施加在Au(111)电极上的电位不同,A会呈现不同的吸附状态,包括物理吸附相和化学吸附相。在物理吸附的电势范围,高分辨ECSTM图像显示,同一个电势下共存着多样性的A的吸附结构。当基底电势变得更正时,一种更倾斜的吸附状态也就是A的化学吸附相会形成。在较负电位下,A和T能通过分子之间氢键作用在Au(111)电极上形成一种新的网络结构,而G能形成多层吸附。 (3) 利用STM研究了不同方法移除硫醇自组装膜之后金电极表面的再生情况。分别使用了化学法和电化学还原脱附法。化学法比较简单,使用的试剂有王水,piranha和NaBH4。王水对金电极表面有强腐蚀作用;piranha和NaBH4对金表面的作用较小,但是NaBH4处理之后的金表面上会有较多的亮岛出现。在移除自组装膜之后的电极上直接组装六苯并苯,我们观察到用piranha和NaBH4处理之后的金电极表面上六苯并苯自组装膜缺陷较多,有序domain也比较小。电化学法脱附可以得到比较干净的金表面,直接组装的六苯并苯自组装膜有序性好,缺陷少。而且,电化学脱附法通过控制电位可以实现硫醇自组装膜和六苯并苯自组装膜的相互转换。

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用循环伏安法(CV)和电化学扫描隧道显微镜(ECSTM)在HClO4溶液中研究了配对碱基腺嘌呤(Adenine,A)与胸腺嘧啶(Thymine,T)在Au(111)电极上的共吸附行为。CV曲线表明,A和T的电化学共吸附行为更接近于A的电化学吸附行为。高分辨STM图像显示,在物理吸附区域碱基A和T分子之间通过氢键作用形成一种不同于单组分的网络结构。根据STM图像提出一个可能的模型,并给出了在Au(111)电极上共吸附时A和T分子之间可能的氢键作用方式。

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Large-scale, uniform plasmid deoxyribonucleic acid (DNA) network has been successfully constructed on 11-mercaptoundecanoic acid modified gold (111) surface using a self-assembly technique. The effect of DNA concentration on the characteristics of the DNA network was investigated by atomic force microscopy. It was found that the size of meshes and the height of fibers in the DNA network could be controlled by varying the concentration of DNA with a constant time of assembly of 24 h.

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Atomic force microscope (AFM)-based scanned probe oxidation (SPO) nanolithography has been carried out on an octadecyl-terminated Si(111) surface to create dot-array patterns under ambient conditions in contact mode. The kinetics investigations indicate that this SPO process involves three stages. Within the steadily growing stage, the height of oxide dots increases logarithmically with pulse duration and linearly with pulse voltage. The lateral size of oxide dots tends to vary in a similar way. Our experiments show that a direct-log kinetic model is more applicable than a power-of-time law model for the SPO process on an alkylated silicon in demonstrating the dependence of oxide thickness on voltage exposure time within a relatively wide range. In contrast with the SPO on the octodecysilated SiO2/silicon surface, this process can be realized by a lower voltage with a shorter exposure time, which will be of great benefit to the fabrication of integrated nanometer-sized electronic devices on silicon-based substrates. This study demonstrates that the alkylated silicon is a new promising substrate material for silicon-based nanolithography.

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Scanned probe oxidation (SPO) nanolithography has been performed with an atomic force microscope (AFM) on an octadecyl-terminated silicon (111) surface to create protuberant oxide line patterns under ambient conditions in contact mode. The kinetic investigations of this SPO process indicate that the oxide line height increases linearly with applied voltage and decreases logarithmically with writing, speed. The oxide line width also tends to vary with the same law. The ambient humidity and the AFM tip state can remarkably influence this process, too. As compared with traditional octadecylsilated SiO2/Si substrate, such a substrate can guarantee the SPO with an obviously lowered voltage and a greatly increased writing speed. This study demonstrates that such alkylated silicon is a promising silicon-based substrate material for SPO nanolithography.

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Both bare and self-assembled monolayer (SAM) protected gold substrate could be etched by allyl bromide according to atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS) and inductively coupled plasma mass spectrometric (ICPMS) analysis results. With this allyl bromide ink material, negative nanopatterns could be fabricated directly by dip-pen nanolithography (DPN) on SAMs of 16-mercaptohexadecanoic acid (MHA) on Au(111) substrate. A tip-promoted etching mechanism was proposed where the gold-reactive ink could penetrate the MHA resist film through tip-induced defects resulting in local corrosive removal of the gold substrate. The fabrication mechanism was also confirmed by electrochemical characterization, energy dispersive spectroscopy (EDS) analysis and fabrication of positive nanopatterns via a used DPN tip.