Active-passive 44 SOA-based switch with integrated power monitoring

The first monolithically integrated 44 switch with power monitoring function using on-chip PIN photodiodes is reported. Using 10Gb/s signals, under active power control an IPDR of 12dB for a 1dB power penalty is achieved. © 2012 OSA.

Carbon nanotubes: carbon nanotube based high resolution holograms (adv. Mater. 44/2012).

By using carbon nanotubes as the smallest possible scattering element, light can be diffracted in a highly controlled manner to produce a 2D image, as reported by Haider Butt and co-workers on page OP331. An array of carbon nanotubes is elegantly patterned to produce a high resolution hologram. In response to incident light on the hologram, a high contrast and wide field of view "CAMBRIDGE" image is produced.

Demonstration of cascaded operation of active-passive integrated 4×4 SOA switches with on-chip monitoring for power control and energy consumption optimization

Cascaded 4×4 SOA switches with on-chip power monitoring exhibit potential for lowpower 16×16 integrated switches. Cascaded operation at 10Gbit/s with an IPDR of 8.5dB and 79% lower power consumption than equivalent all-active switches is reported © 2013 OSA.

长江中游长吻鮠、蛇鮈寄生粘孢子虫感染率的季节动态

1.寄生长吻鮠上的粘孢子虫有3种:巨囊两极虫和四极虫一种,寄生在胆囊中,碘泡虫一种寄生在肾脏中;寄生蛇鮈上的粘孢子虫有2种:湖北碘泡虫,寄生在脑、鳃、肾、体腔、肠,主要寄生在脑,楚克拉虫一种,寄生在胆囊中。2.粘孢子虫对长吻鮠、蛇鮈的感染率存在明显的季节变化;对长吻鮠的感染率最高值出现在6月(95％),最低值出现在2月(43％),年平均值为65％;湖北碘泡虫对蛇鮈的总感染率最高值出现在12—2月(63—67％),其次在8月(58％),春秋两季感染率较低(36—44％),年平均值为51％。3.总感染率(IR

High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy

High-quality GaNAs/GaAs quantum wells with high substitutional N concentrations, grown by molecular-beam epitaxy, are demonstrated using a reduced growth rate in a range of 0.125-1 mu m/h. No phase separation is observed and the GaNAs well thickness is limited by the critical thickness. Strong room-temperature photoluminescence with a record long wavelength of 1.44 mu m is obtained from an 18-nm-thick GaN0.06As0.94/GaAs quantum well. (C) 2005 American Institute of Physics.

4×4热光SOI波导开关阵列

设计并制作了阻塞型和完全无阻塞型4×4热光SOI(silicon-on-insulator)波导开关阵列.开关单元采用了多模干涉耦合器(MMI)-MZI(Mach-Zehnder intederometer)结构的2×2光开关.阻塞型光开关附加损耗为4.8～5.4 dB,串扰为-21.8 dB～-14.5 dB.完全无阻塞型光开关阵列附加损耗为6.6～9.6 dB,串扰为-25.8～-16.8 dB.两者的消光比都在17～25 dB内变化,开关单元功耗小于230 mW.器件的开关时间小于3μs.功耗和开关速度都明显优于SiO_2基和聚合物基的开关阵列.

Design and Fabrication of Thermo-Optic 4×4 Switching Matrix in Silicon-on-Insulator

A rearrangeable nonblocking thermo-optic 4×4 switching matrix,which consists of five 2×2 multimode interference-based Mach-Zehnder interferometer(MMI-MZI) switch elements，is designed and fabricated.The minimum and maximum excess loss for the matrix are 6.6 and 10.4dB,respectively.The crosstalk in the matrix is measured to be between －12 and －19.8dB.The switching speed of the matrix is less than 30μs.The power consumption for the single switch element is about 330mW.