Optical anisotropy of InAs monolayer in (311)-oriented GaAs matrix

In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots. The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the InAs layer grown on (311)-oriented GaAs surface.

EFFECTIVE-MASS THEORY FOR GAAS/GA1-XALXAS QUANTUM WIRES AND CORRUGATED SUPERLATTICES GROWN ON (311)-ORIENTED SUBSTRATES

The electronic structures of GaAs/Ga1-xAlxAs quantum wires (corrugated superlattices) grown on (311)-oriented substrates are studied in the framework of the effective-mass envelope-function method. The electron and hole subband structure and optical transition matrix elements are calculated. When x=1, the results are compared with experiments, and it is found that the direct transition becomes an indirect transition as the widths of well and barrier become smaller.

Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100)GaAs substrates

Low-temperature photoluminescence and excitation spectra from InAs monolayer quantum structures, grown on (311)A, (311)B, and (100) GaAs substrates, are investigated, The structures were grown simultaneously by conventional molecular-beam epitaxy (MBE), The experimental results show that the quality of InAs monolayer on (311)B GaAs substrate is obviously better in crystal quality than those on the two other oriented GaAs substrates. In addition, the transition peaks of the InAs layer grown on (311) GaAs substrates shift to higher energy with respect to that from the InAs layer grown on (100) GaAs substrate.

GaAs（311）A衬底上自组装InAs量子点的结构和光学特性

于2010-11-23批量导入

生长在（311）A面GaAs衬底上的InAlAs/AlGaAsⅡ型量子点的光致发光研究

于2010-11-23批量导入

Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.

Teores de cátions dos vinhos da Microrregião Homogênea viticultora de Caxias do Sul, (MRH 311).

1987

Spontaneous local symmetry breaking: a conformational study of glycine on Cu{311}

Understanding the interplay between intrinsic molecular chirality and chirality of the bonding footprint is crucial in exploiting enantioselectivity at surfaces. As such, achiral glycine and chiral alanine are the most obvious candidates if one is to study this interplay on different surfaces. Here, we have investigated the adsorption of glycine on Cu{311} using reflection-absorption infrared spectroscopy, low-energy electron diffraction, temperature-programmed desorption and first-principles density-functional theory. This combination of techniques has allowed us to accurately identify the molecular conformations present under different conditions, and discuss the overlayer structure in the context of the possible bonding footprints. We have observed coverage-dependent local symmetry breaking, with three-point bonded glycinate moieties forming an achiral arrangement at low coverages, and chirality developing with the presence of two-point bonded moieties at high coverages. Comparison with previous work on the self-assembly of simple amino acids on Cu{311} and the structurally-similar Cu{110} surface has allowed us to rationalise the different conditions necessary for the formation of ordered chiral overlayers.