Strength of hot pressed ZrB2-SiC composite after exposure to high temperatures (1000-1700 degrees C)

Residual strength (room temperature strength after exposure in air at high temperatures) of hot pressed ZrB2-SiC composites was evaluated as function of SiC contents (10-30 vol%) as well as exposure temperatures for 5 h (1000-1700 degrees C). Multilayer oxide scale structures were found after exposures. The composition and thickness of these multilayered oxide scale structure was dependent on exposure temperature and SiC contents in composites. After exposure to 1000 degrees C for 5 h, the residual strength of ZrB2-SiC composites improved by nearly 60% compared to the as-hot pressed composites with 20 and 30 vol% SiC. On the other hand, the residual strength of these composites remained unchanged after 1500 degrees C for 5 h. A drastic degradation in residual strength was observed in composites with 20 and 30 vol% SiC after exposure to 1700 degrees C for 5 h in ZrB2-SiC. An attempt was made to correlate the microstructural changes and oxide scales with residual strength with respect to variation in SiC content and temperature of expsoure. (C) 2012 Elsevier Ltd. All rights reserved.

Reactive hot pressing of Ti-B-C and Ti-C at 1200 degrees C

Stoichiometric and non-stoichiometric powder mixtures of Ti-B4C and Ti-C with 1 wt% Ni were reactively hot pressed at 40 MPa, 1200 degrees C for 30 min. In both systems, the combined presence of Ni and non-stoichiometry enabled complete densification. While in Ti-C, non-stoichiometry by itself plays a significant role in promoting densification, the formation of intermediate borides in Ti-B4C powder mixtures requires the additional presence of Ni which promotes full reaction through the formation of a transient liquid as established previously in Ti-BN powder mixtures.

Identification of a gene, ccr-1 (sll1242), required for chill-light tolerance and growth at 15 degrees C in Synechocystis sp PCC 6803

Synechocystis sp. PCC 6803 exposed to chill (5 degrees C)-light (100 mu mol photons m(-2) s(-1)) stress loses its ability to reinitiate growth. From a random insertion mutant library of Synechocystis sp. PCC 6803, a sll1242 mutant showing increased sensitivity to chill plus light was isolated. Mutant reconstruction and complementation with the wild-type gene confirmed the role of sll1242 in maintaining chill-light tolerance. At 15 degrees C, the autotrophic and mixotrophic growth of the mutant were both inhibited, paralleled by decreased photosynthetic activity. The expression of sll1242 was upregulated in Synechocystis sp. PCC 6803 after transfer from 30 to 15 degrees C at a photosynthetic photon flux density of 30 mu mol photons m(-2) S-1. sll1242, named ccr (cyanobacterial cold resistance gene)- 1, may be required for cold acclimation of cyanobacteria in light.

Room temperature (34 degrees C) operation of strain-compensated quantum cascade lasers

A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)As quantum cascade laser is reported. Quasi-continuous wave operation of this device at 34 degrees C with an output power of 11.4mW persisted for more than 30 minutes without obvious degradation. A very low threshold current density of 1.2KA/cm(2) at this temperature was observed.