Trench MOS-gated power devices

MOS gated power devices are now available for power switching applications with voltage blocking requirements up to 1 kV and current ratings up to 300A. This is due to the invention of the IGBT, a device in which MOS gate turn-on leads to minority carrier injection to modulate the high resistance drift region required for voltage blocking. The paper presents current technologies being developed in order to expand the applications of MOS gated power devices. Also explained is the available trench gate technology that can be used to fabricate power devices.

1.4 kV, 25 A, PT and NPT Trench IGBTs with optimum forward characteristics

In this paper we report the development of 1.4 kV 25 A PT and NPT Trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100A/cm2 was 1.1 V for PT non-irradiated devices and 2.1 V for 16 MRad PT irradiated devices. The non-irradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm2 at 125 C. The maximum controllable current density was in excess of 1000A/cm2.