Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

Untersuchungen von intrazellulären Signalwegen bei neuraler Determinierung und Differenzierung in vitro: Einfluß von GAP-43 und Bcl-2

Die PCC7-Mz1-Zellinie stellt ein geeignetes Modell dar, um frühe neurale Determinierungs- und Differenzierungsprozesse unter kontrollierten Bedingungen in vitro zu untersuchen. Aus pluripotenten Stammzellen entwickelt sich nach Behandlung mit dem Morphogen Retinsäure (RA) ein stabiles Muster aus Neuronen, Fibroblasten und Astroglia-Zellen. Parallel stirbt ein reproduzierbarer Anteil der Kultur apoptotisch. Zur näheren Aufklärung der molekularen Vorgänge während der neuralen Entwicklung wurde der Einfluß von zwei Schlüsselmolekülen - dem Proteinkinase C Substrat (PKC) GAP-43 sowie dem antiapoptotischen Bcl-2 Protein - auf die neurale Differenzierung und die damit assoziierten Apoptoseereignisse der PCC7-Mz1-Zellen untersucht. Dazu wurden stabile Zellinien, die eine Überexpression von GAP-43 bzw. von Bcl-2 aufwiesen, hergestellt. GAP-43In PCC7-Mz1-Zellen wurde die Expression von GAP-43 sowohl auf mRNA- als auch auf Protein-Ebene innerhalb von 24 Stunden nach Zugabe von RA hochreguliert. GAP-43 war bereits in noch proliferierenden neuronalen Vorläuferzellen als Substrat für PKC und als Interaktionspartner von Calmodulin funktionell. Die Überexpression von GAP-43 in PCC7-Mz1-Zellen förderte die Ausprägung des neuronalen Phänotyps. Das Differenzierungspotential der Mz-GAP-43 Klone war eingeschränkt, da sich nach Induktion mit RA aus den Stammzellen nur noch Neurone, aber keine Fibroblasten und Astroglia-Zellen mehr entwickelten. Die Determinierung für das neuronale Entwicklungsschicksal war in den Mz-GAP-43 Klonen stärker fortgeschritten als in MzN-Klonen, die durch Subklonierung aus PCC7-Mz1-Zellen generiert wurden, da die GAP-43 überexprimierenden Zellen durch Wachstum auf Laminin nicht in den pluripotenten Phänotyp revertiert werden konnten. Aufgrund der Interaktion zwischen GAP-43 und Calmodulin in Stammzellen der Mz-GAP-43 Klone kann man vermuten, daß die neuronalen Determinierungsprozesse über Ca2+/Calmodulin-abhängige Signalwege verlaufen. Da das Gen für den Transkriptionsfaktor NCNF (

In Between : The Gap of quality L'influenza dell'insegnamento di Gurdjieff nel teatro di Peter Brook, Decalan Donnellan e Robert Lepage

Il Lavoro é incentrato sull' influenza dell'insegnamento di G. I Gurdjieff sul teatro del novecento in particolare sul lavoro di Peter Brook, Declan Donnellan e Robert Lepage

"Experimental and computational approaches to historical masonry structures: A study in the direction of filling the gap"

The assessment of historical structures is a significant need for the next generations, as historical monuments represent the community’s identity and have an important cultural value to society. Most of historical structures built by using masonry which is one of the oldest and most common construction materials used in the building sector since the ancient time. Also it is considered a complex material, as it is a composition of brick units and mortar, which affects the structural performance of the building by having different mechanical behaviour with respect to different geometry and qualities given by the components.

Influence of V5/6-His Tag on the Properties of Gap Junction Channels Composed of Connexin43, Connexin40 or Connexin45

HeLa cells expressing wild-type connexin43, connexin40 or connexin45 and connexins fused with a V5/6-His tag to the carboxyl terminus (CT) domain (Cx43-tag, Cx40-tag, Cx45-tag) were used to study connexin expression and the electrical properties of gap junction channels. Immunoblots and immunolabeling indicated that tagged connexins are synthesized and targeted to gap junctions in a similar manner to their wild-type counterparts. Voltage-clamp experiments on cell pairs revealed that tagged connexins form functional channels. Comparison of multichannel and single-channel conductances indicates that tagging reduces the number of operational channels, implying interference with hemichannel trafficking, docking and/or channel opening. Tagging provoked connexin-specific effects on multichannel and single-channel properties. The Cx43-tag was most affected and the Cx45-tag, least. The modifications included (1) V j-sensitive gating of I j (V j, gap junction voltage; I j, gap junction current), (2) contribution and (3) kinetics of I j deactivation and (4) single-channel conductance. The first three reflect alterations of fast V j gating. Hence, they may be caused by structural and/or electrical changes on the CT that interact with domains of the amino terminus and cytoplasmic loop. The fourth reflects alterations of the ion-conducting pathway. Conceivably, mutations at sites remote from the channel pore, e.g., 6-His-tagged CT, affect protein conformation and thus modify channel properties indirectly. Hence, V5/6-His tagging of connexins is a useful tool for expression studies in vivo. However, it should not be ignored that it introduces connexin-dependent changes in both expression level and electrophysiological properties.

The Fundamental Gap For Hyperbolic Triangles

In 1983, M. van den Berg made his Fundamental Gap Conjecture about the difference between the first two Dirichlet eigenvalues (the fundamental gap) of any convex domain in the Euclidean plane. Recently, progress has been made in the case where the domains are polygons and, in particular, triangles. We examine the conjecture for triangles in hyperbolic geometry, though we seek an for an upper bound for the fundamental gap rather than a lower bound.