Sinusoidal phase-modulating laser diode interferometer for measuring angular displacement

We propose a sinusoidal phase-modulating laser diode interferometer for measuring small angular displacement. The interferometer is based on a Fabry-Perot plate. It has a simple structure and is insensitive to external disturbance. Sinusoidal phase-modulating interferometry is used for improving the measurement accuracy. A charge-coupled device (CCD) image sensor is used for measuring the distance between the reflected beams from two faces of the Fabry-Perot plate. From the distance, the initial angle of incidence is calculated. Compared with Michelson interferometers and autocollimators, this interferometer has the advantage of compact size and simple structure. The numerical calculation and experimental results verify the usefulness of this novel interferometer. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

Aberration measurement of projection optics in lithographic tools by use of an alternating phase-shifting mask

As a critical dimension shrinks, the degradation in image quality caused by wavefront aberrations of projection optics in lithographic tools becomes a serious problem. It is necessary to establish a technique for a fast and accurate in situ aberration measurement. We introduce what we believe to be a novel technique for characterizing the aberrations of projection optics by using an alternating phase-shifting mask. The even aberrations, such as spherical aberration and astigmatism, and the odd aberrations, such as coma, are extracted from focus shifts and image displacements of the phase-shifted pattern, respectively. The focus shifts and the image displacements are measured by a transmission image sensor. The simulation results show that, compared with the accuracy of the previous straightforward measurement technique, the accuracy of the coma measurement increases by more than 30% and the accuracy of the spherical-aberration measurement increases by approximately 20%. (c) 2006 Optical Society of America.

High energy heavy ion induced enhanced adhesion

The work described in this thesis represents an attempt to summarize to date the information collected on the process of high energy heavy ion induced enhanced adhesion. Briefly, the process involves the irradiation of materials covered by thin (≾3μm) films with high energy (E > 200 keV I nucleon) heavy ion beams (such as Fluorine or Chlorine). Enhanced adhesion has been observed on all material combinations tested, including metal on metal, metal on semiconductor, metal on dielectric and dielectric on dielectric systems. In some cases, the enhancement can be quite large, so that a film that could be wiped off a substrate quite easily before irradiation can withstand determined scrubbing afterwards.

Very little is understood yet about this adhesion mechanism, so what is presented are primarily observations about systems studied, and descriptions of the actual preparation and irradiation of samples used. Some discussion is presented about mechanisms that have been considered but rejected.

物体表面形貌的正弦相位调制实时干涉测量技术研究

表面形貌干涉测量技术是一种高精度的非接触式测量技术,在工业生产和科学研究中具有广泛的应用。提出一种实时测量表面形貌的正弦相位调制干涉测量新技术。该技术用激光二极管作光源,用自制的高速图像传感器探测干涉信号,通过信号处理电路实时解相得到被测表面所对应的相位分布,实时分析相位获得物体表面形貌。该技术消除了光强和部分外界干扰的影响,提高了系统的测量精度。楔形光学平板表面形貌的测量结果表明,测量点为60×60个的情况下,测量时间小于8.2 ms,重复测量精度(RMS)为4.3 nm。

Structure-change-dependent transmittance of PtOx thin film in super-resolution near-field structure: Diffraction effect analysis

To study working mechanism of super-resolution near-field structure (super-RENS) optical disk from a far-field optics view is very necessary because of the actual far-field writing/readout process in the optical disk system. A Gaussian diffraction model based on Fresnel-Kirchhoff diffraction theory of PtOx-type super-RENS has been set up in this Letter. The relationship between micro-structural deformation (change of bubble structure and refractive index profile) with far-field optical response of PtOx thin film has been studied with it in detail. The simulation results are in good agreement with the experimental results reported in literatures with a designed configuration. These results may provide more quantitative information for better understanding of the working mechanism of metal-oxide-type super-RENS. (c) 2007 Elsevier B.V. All rights reserved.

宽禁带氧化锌半导体薄膜的研究进展

氧化锌作为新一代化合物半导体，其禁带宽度对应紫外光的波长。氧化锌薄膜有望开发蓝光、蓝绿光、紫外光等多种发光器件，具有广阔的应用前景。重点介绍了氧化锌薄膜的研究进展以及存在的问题，并对氧化锌薄膜的未来进行了展望。

The use of C-V techniques to investigate instability mechanisms in M-I-S structures

In the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radio-frequency plasma-enhanced chemical vapour deposition technique.

Materials science: The ultrasmoothness of diamond-like carbon surfaces

The ultrasmoothness of diamond-like carbon coatings is explained by an atomistic/continuum multiscale model. At the atomic scale, carbon ion impacts induce downhill currents in the top layer of a growing film. At the continuum scale, these currents cause a rapid smoothing of initially rough substrates by erosion of hills into neighboring hollows. The predicted surface evolution is in excellent agreement with atomic force microscopy measurements. This mechanism is general, as shown by similar simulations for amorphous silicon. It explains the recently reported smoothing of multilayers and amorphous transition metal oxide films and underlines the general importance of impact-induced downhill currents for ion deposition, polishing, and nanopattering.

A high performance oxygen storage material for chemical looping processes with CO2 capture

Chemical looping combustion (CLC) is a novel combustion technology that involves cyclic reduction and oxidation of oxygen storage materials to provide oxygen for the combustion of fuels to CO2 and H2O, whilst giving a pure stream of CO2 suitable for sequestration or utilisation. Here, we report a method for preparing of oxygen storage materials from layered double hydroxides (LDHs) precursors and demonstrate their applications in the CLC process. The LDHs precursor enables homogeneous mixing of elements at the molecular level, giving a high degree of dispersion and high-loading of active metal oxide in the support after calcination. Using a Cu-Al LDH precursor as a prototype, we demonstrate that rational design of oxygen storage materials by material chemistry significantly improved the reactivity and stability in the high temperature redox cycles. We discovered that the presence of sodium-containing species were effective in inhibiting the formation of copper aluminates (CuAl2O4 or CuAlO 2) and stabilising the copper phase in an amorphous support over multiple redox cycles. A representative nanostructured Cu-based oxygen storage material derived from the LDH precursor showed stable gaseous O2 release capacity (∼5 wt%), stable oxygen storage capacity (∼12 wt%), and stable reaction rates during reversible phase changes between CuO-Cu 2O-Cu at high temperatures (800-1000 °C). We anticipate that the strategy can be extended to manufacture a variety of metal oxide composites for applications in novel high temperature looping cycles for clean energy production and CO2 capture. © The Royal Society of Chemistry 2013.

Interaction between Fe-based oxygen carriers and n-heptane during chemical looping combustion

Chemical looping combustion (CLC) uses a metal oxide (the oxygen carrier) to provide oxygen for the combustion of a fuel and gives an inherent separation of pure CO2 with minimal energy penalty. In solid-fuel CLC, volatile matter will interact with oxygen carriers. Here, the interaction between iron-based oxygen carriers and a volatile hydrocarbon (n-heptane) was investigated in both a laboratory-scale fluidised bed and a thermogravimetric analyser (TGA). Experiments were undertaken to characterise the thermal decomposition of the n-heptane occurring in the presence and in the absence of the oxygen carrier. In a bed of inert particles, carbon deposition increased with temperature and acetylene appeared as a possible precursor. For a bed of carrier consisting of pure Fe2O3, carbon deposition occurred once the Fe2O3 was fully reduced to Fe. When the Fe2O3 was doped with 10 mol % Al2O3 (Fe90Al), deposition started when the carrier was reduced to a mixture of Fe and FeAl2O4, the latter being very unreactive. Furthermore, when pure Fe2O3 was fully reduced to Fe, agglomeration of the fluidised bed occurred. However, Fe90Al did not give agglomeration even after extended reduction. The results suggest that Fe90Al is promising for the CLC of solid fuels. © 2012 The Combustion Institute. Published by Elsevier Inc. All rights reserved.

The mechanism of high temperature aqueous corrosion of steel

A new model is presented which describes the growth of the duplex layers of Fe3O4 on mild steel in high temperature, deoxygenated, neutral or alkaline aqueous solutions. It is shown that the layers grow by the ingress of water along oxide micropores to the metal-oxide interface and by the rate-limiting outward diffusion of Fe ions along oxide grain boundaries. The new model accounts for the observed temperature-dependence and pH-dependence of the corrosion, the morphology of inner and outer layer crystallites, the segregation of alloying elements, and the location of hydrogen evolution. The model can also be generalized to other steels and alloys. © 1989.

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. © 2013 American Chemical Society.

CO2-gasification of a lignite coal in the presence of an iron-based oxygen carrier for chemical-looping combustion

Chemical-looping combustion (CLC) has the inherent property of separating the product CO2 from flue gases. Instead of air, it uses an oxygen carrier, usually in the form of a metal oxide, to provide oxygen for combustion. All techniques so far proposed for chemical looping with solid fuels involve initially the gasification of the solid fuel in order for the gaseous products to react with the oxygen carrier. Here, the rates of gasification of coal were compared when gasification was undertaken in a fluidised bed of either (i) an active Fe-based oxygen carrier used for chemical looping or (ii) inert sand. This enabled an examination of the ability of chemical looping materials to enhance the rate of gasification of solid fuels. Batch gasification and chemical-looping combustion experiments with a German lignite and its char are reported, using an electrically-heated fluidised bed reactor at temperatures from 1073 to 1223 K. The fluidising gas was CO2 in nitrogen. The kinetics of the gasification were found to be significantly faster in the presence of the oxygen carrier, especially at temperatures above 1123 K. A numerical model was developed to account for external and internal mass transfer and for the effect of the looping agent. The model also included the effects of the evolution of the pore structure at different conversions. The presence of Fe2O3 led to an increase in the rate of gasification because of the rapid oxidation of CO by the oxygen carrier to CO2. This resulted in the removal of CO and maintained a higher mole fraction of CO2 in the mixture of gas around the particle of char, i.e. within the mass transfer boundary layer surrounding the particle. This effect was most prominent at about 20% conversion when (i) the surface area for reaction was at its maximum and (ii) because of the accompanying increase in porosity and pore size, intraparticle resistance to gas mass transfer within the particle of char had fallen, compared with that in the initial particle. Excellent agreement was observed between the rates predicted by the numerical model and those observed experimentally. ©2013 Elsevier Ltd. All rights reserved.

Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions

We reported the all electronic demonstration of spin injection and detection in the trilayers with hybrid structure of CoFeB/GaAs/(Ga,Mn)As (metal/insulator semiconductor) by probing the magnetoresistance at low temperature from 1.8 to 30 K. Tunneling magnetoresistance (TMR) ratios of 3.8%, 4.7%, 2.9%, and 1.4% at 1.8, 10, 20, and 30 K, respectively, were observed. Bias dependence of both the junction resistance and TMR ratio was studied systematically. V-half at which TMR drops to half of its maximum is 6.3 mV, being much smaller compared to that observed in (Ga,Mn)As/ZnSe/Fe and (Ga,Mn)As/AlAs/MnAs hybrid structures, indicating lower Fermi energy of (Ga,Mn)As.

Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage

CaCu3Ti(4-x)Nb(x)O(12) (x = 0, 0.01, 0.08, 0.2) ceramics were fabricated by a conventional solid-state reaction method. The ceramics showed the body-centered cubic structure without any foreign phases and the grain size decreases with Nb doping. Two Debye-type relaxations were observed for the Nb-doped samples at low frequency and high frequency, respectively. The complex electric modulus analysis revealed that the surface layer, grains and grain boundaries contributed to the dielectric constant. The low-frequency dielectric constant relative to the surface layer decreased to a minimum and then increased with the dc bias voltage at 100 Hz, which were well explained in terms of a model containing two metal oxide semiconductors in series, confirming the surface layer in the ceramics. The shift voltage V-B corresponding to the minimal capacitance increased with increase of the composition x. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.