Effect of Zn Sputtering Rate on the Morphological and Optical Properties of ZnO Films

Zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass and silicon substrates by RF magnetron sputtering using a zinc-aluminum target. Both films were deposited at a growth rate of 12.5 nm/min to a thickness of around 750 nm. In the visible region, the films exhibit optical transmittances which are greater than 80%. The optical energy gap of ZnO films increased from 3.28 eV to 3.36 eV upon doping with Al. This increase is related to the increase in carrier density from 5.9 × 1018 cm-3 to 2.6 × 1019 cm-3. The RMS surface roughness of ZnO films grown on glass increased from 14 to 28 nm even with only 0.9% at Al content. XRD analysis revealed that the ZnO films are polycrystalline with preferential growth parallel to the (002) plane, which corresponds to the wurtzite structure of ZnO.

Síntese e caracterização de alvo de óxido de zinco dopado com alumínio

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Investigação das propriedades ópticas de ZnO e ZnO:Al

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Desenvolvimento de procedimentos e métodos analíticos no campo forense aplicando os princípios da química verde

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudos biológicos de nanopartículas de óxido de zinco: interação com proteínas e avaliação de “Burst” oxidativo de leucócitos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Desempenho da aplicação foliar de zinco em feijoeiro

The nutritional requirements of crops, in general, becomes more intense with the beginning of the reproductive phase, being more critical at the time of seed formation, when considerable amounts of nutrients are they translocation, this requirement should be increased to the fact that nutrients are essential to training and development of new bodies of booking. This study aimed to evaluate the agronomic efficiency of foliar application of zinc (zinc oxide Zn 700 g L-1 ) in bean plant, compared to leaf application of zinc sulphate (ZnSO4) and control (without application of Zn). The experiment was installed in the Faculty of Agricultural Sciences - UNESP / Campus de Botucatu-SP. Was placed in containers with a capacity of 20L of soil and leaf applications encompassing four schemes and two of rain, with 5 replicates per treatment, a total of 40 vessels. The results for the factorial design did not show in general, significantly different answers when evaluated on the simulation of rain or the lack of simulation. The treatment (700g L-1 of ZnO) has demonstrated agronomic efficiency as its foliar application, with results equal or exceed the application of ZnSO4 and control when applied at the same dose of Zn.

Caracterização dos biofilmes de dermatófitos e desenvolvimento de protótipos anti-dermatófitos nas formas planctônica e biofilme

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Testes convencionais e empregando Micro-CT na avaliação de propriedades físico-químicas de materiais retrobturadores e cimentos endodônticos

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Membranas de biocelulose como substrato para o crescimento de nanofios de ZnO: síntese e aplicação

Pós-graduação em Química - IQ

Modificação da superfície de óxidos de ferro por dextrana derivatizada para aplicações em liberação de fármaco

Pós-graduação em Química - IQ

Membranas de biocelulose como substrato para o crescimento de nanofios de ZnO: síntese e aplicação

Pós-graduação em Química - IQ

Modificação da superfície de óxidos de ferro por dextrana derivatizada para aplicações em liberação de fármaco

Pós-graduação em Química - IQ

Comparative degradation of ZnO- and SnO(2)-based polycrystalline non-ohmic devices by current pulse stress

The degradation behaviour of SnO(2)-based varistors (SCNCr) due to current pulses (8/20 mu s) is reported here for the first time in comparison with the ZnO-based commercial varistors (ZnO). Puncturing and/or cracking failures were observed in ZnO-based varistors possessing inferior thermo-mechanical properties in comparison with that found in a SCNCr system free of failures. Both systems presented electric degradation related to the increase in the leakage current and decrease in the electric breakdown field, non-linear coefficient and average value of the potential barrier height. However, it was found that a more severe degradation occurred in the ZnO-based varistors concerning their non-ohmic behaviour, while in the SCNCr system, a strong non-ohmic behaviour remained after the degradation. These results indicate that the degradation in the metal oxide varistors is controlled by a defect diffusion process whose rate depends on the mobility, the concentration of meta-stable defects and the amount of electrically active interfaces. The improved behaviour of the SCNCr system is then inferred to be associated with the higher amount of electrically active interfaces (85%) and to a higher energy necessary to activate the diffusion of the specific defects.

Diagnostic of Silicon Carbide Surge Arresters using Leakage Current Measurement

Nowadays, the zinc oxide surge arresters (ZnO) are widely used in power systems, however, a large number of silicon carbide surge arresters (SiC) are still in service in the utilities. On the other hand, it is not possible to replace all SiC surge arresters in a short time period, being necessary to review the maintenance program taking into account the surge arresters that are more degraded. In this context, a research project was established between the University of Sao Paulo and the electrical utility CTEEP, aiming the investigation of its SiC surge arresters. This work shows that the leakage current measurement, a diagnostic method for the ZnO surge arresters, can provide useful information related to the condition of the SiC surge arresters. Analysis of the amplitude and distortion of the leakage current, also considering thermovision measurements, resulted in better evaluation of the SiC surge arresters.

Structural evolution of Eu-doped hydroxyapatite nanorods monitored by photoluminescence emission

This paper reports the synthesis of Eu-doped hydroxyapatite (HA:Eu) resulting in particles with nanorod diameters from 9 to 26 nm using the microwave hydrothermal method (HTMW). Eu3+ ions were used as a marker in the HA network by basic hydrolysis followed by the HTMW treatment. The crystalline HA:Eu nanorod nature in a short-range order was detected by photoluminescence (PL) measurements from Eu3+ emission into the HA matrix. Thus, was possible to verify that HA crystallization is favored in a short structural order when the HTMW treatment time was increased from 0 to 40 min and that the Eu3+ substitution in the HA lattice is site-selective. (C) 2012 Elsevier B.V. All rights reserved.