Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO2 thin films

Titanium dioxide (TiO2) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO2 films were investigated. The refractive index of TiO2 films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO2 film is of anatase phase after annealing at 300 degrees C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. (C) 2012 Elsevier B.V. All rights reserved.

Top-spin analysis of new scalar and tensor interactions in e(+) e (-) collisions with transverse beam polarization

The top polarization at the International Linear Collider (ILC) with transverse beam polarization is utilized in the process to probe interactions of the scalar and tensor type beyond the Standard Model and to disentangle their individual contributions. Confidence level limits of 90% are presented on the interactions with realistic integrated luminosity and are found to improve by an order of magnitude compared to the case when the spin of the top quark is not measured. Sensitivities of the order of a few times 10 (-aEuro parts per thousand 3) TeV (-aEuro parts per thousand 2) for real and imaginary parts of both scalar and tensor couplings at and 800 GeV with an integrated luminosity of 500 fb (-aEuro parts per thousand 1) and completely polarized beams are shown to be possible.

Coupled polynomial field approach for elimination of flexure and torsion locking phenomena in the Timoshenko and Euler-Bernoulli curved beam elements

The curvature related locking phenomena in the out-of-plane deformation of Timoshenko and Euler-Bernoulli curved beam elements are demonstrated and a novel approach is proposed to circumvent them. Both flexure and Torsion locking phenomena are noticed in Timoshenko beam and torsion locking phenomenon alone in Euler-Bernoulli beam. Two locking-free curved beam finite element models are developed using coupled polynomial displacement field interpolations to eliminate these locking effects. The coupled polynomial interpolation fields are derived independently for Timoshenko and Euler-Bernoulli beam elements using the governing equations. The presented of penalty terms in the couple displacement fields incorporates the flexure-torsion coupling and flexure-shear coupling effects in an approximate manner and produce no spurious constraints in the extreme geometric limits of flexure, torsion and shear stiffness. the proposed couple polynomial finite element models, as special cases, reduce to the conventional Timoshenko beam element and Euler-Bernoulli beam element, respectively. These models are shown to perform consistently over a wide range of flexure-to-shear (EI/GA) and flexure-to-torsion (EI/GJ) stiffness ratios and are inherently devoid of flexure, torsion and shear locking phenomena. The efficacy, accuracy and reliability of the proposed models to straight and curved beam applications are demonstrated through numerical examples. (C) 2012 Elsevier B.V. All rights reserved.

Breakup and coalescence characteristics of a hollow cone swirling spray

This paper deals with an experimental study of the breakup characteristics of water emanating from hollow cone hydraulic injector nozzles induced by pressure-swirling. The experiments were conducted using two nozzles with different orifice diameters 0.3 mm and 0.5 mm and injection pressures (0.3-4 MPa) which correspond to Rep = 7000-26 000. Two types of laser diagnostic techniques were utilized: shadowgraph and phase Doppler particle anemometry for a complete study of the atomization process. Measurements that were made in the spray in both axial and radial directions indicate that both velocity and average droplet diameter profiles are highly dependent on the nozzle characteristics, Weber number and Reynolds number. The spatial variation of diameter and velocity arises principally due to primary breakup of liquid films and subsequent secondary breakup of large droplets due to aerodynamic shear. Downstream of the nozzle, coalescence of droplets due to collision was also found to be significant. Different types of liquid film breakup were considered and found to match well with the theory. Secondary breakup due to shear was also studied theoretically and compared to the experimental data. Coalescence probability at different axial and radial locations was computed to explain the experimental results. The spray is subdivided into three zones: near the nozzle, a zone consisting of film and ligament regime, where primary breakup and some secondary breakup take place; a second zone where the secondary breakup process continues, but weakens, and the centrifugal dispersion becomes dominant; and a third zone away from the spray where coalescence is dominant. Each regime has been analyzed in detail, characterized by timescale and Weber number and validated using experimental data. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4773065]

Wave propagation in a porous composite beam: Porosity determination, location and quantification

A wave-based method is developed to quantify the defect due to porosity and also to locate the porous regions, in a composite beam-type structure. Wave propagation problem for a porous laminated composite beam is modeled using spectral finite element method (SFEM), based on the modified rule of mixture approach, which is used to include the effect of porosity on the stiffness and density of the composite beam structure. The material properties are obtained from the modified rule of mixture model, which are used in a conventional SFEM to develop a new model for solving wave propagation problems in porous laminated composite beam. The influence of the porosity content on the group speed and also the effect of variation in theses parameters on the time responses are studied first, in the forward problem. The change in the time responses with the change in the porosity of the structure is used as a parameter to find the porosity content in a composite beam. The actual measured response from a structure and the numerically obtained time responses are used for the estimation of porosity, by solving a nonlinear optimization problem. The effect of the length of the porous region (in the propagation direction), on the time responses, is studied. The damage force indicator technique is used to locate the porous region in a beam and also to find its length, using the measured wave propagation responses. (C) 2012 Elsevier Ltd. All rights reserved.

Damage identification of beam-like structures with contiguous and distributed damage

Structural health monitoring of existing infrastructure is currently an active field of research, where elaborate experimental programs and advanced analytical methods are used in identifying the current state of health of critical structures. Change of static deflection as the indicator of damage is the simplest tool in a structural health monitoring scenario of bridges that is least exploited in damage identification strategies. In this paper, some simple and elegant equations based on loss of symmetry due to damage are derived and presented for identification of damage in a bridge girder modeled as a simply supported beam using changes in static deflections and dynamic parameters. A single contiguous and distributed damage, typical of reinforced or prestressed concrete structures, is assumed for the structure. The methodology is extended for a base-line-free as well as base-line-inclusive measurement. Measurement strategy involves application of loads only at two symmetric points one at a time and deflection measurements at those symmetric points as well as at the midspan of the beam. A laboratory-based experiment is used to validate the approach. Copyright (c) 2012 John Wiley & Sons, Ltd.

Non-rotating beams isospectral to a given rotating uniform beam

In this paper, we seek to find non-rotating beams with continuous mass and flexural stiffness distributions, that are isospectral to a given uniform rotating beam. The Barcilon-Gottlieb transformation is used to convert the fourth order governing equation of a non-rotating beam, to a canonical fourth order eigenvalue problem. If the coefficients in this canonical equation match with the coefficients of the uniform rotating beam equation, then the non-rotating beam is isospectral to the given rotating beam. The conditions on matching the coefficients leads to a pair of coupled differential equations. We solve these coupled differential equations for a particular case, and thereby obtain a class of non-rotating beams that are isospectral to a uniform rotating beam. However, to obtain isospectral beams, the transformation must leave the boundary conditions invariant. We show that the clamped end boundary condition is always invariant, and for the free end boundary condition to be invariant, we impose certain conditions on the beam characteristics. We also verify numerically that the frequencies of the non-rotating beam obtained using the finite element method (FEM) are the exact frequencies of the uniform rotating beam. Finally, the example of beams having a rectangular cross-section is presented to show the application of our analysis. Since experimental determination of rotating beam frequencies is a difficult task, experiments can be easily conducted on these rectangular non-rotating beams, to calculate the frequencies of the rotating beam. (c) 2012 Elsevier Ltd. All rights reserved.

Narrowing of resonances in electromagnetically induced transparency and absorption using a Laguerre-Gaussian control beam

We study the phenomenon of electromagnetically induced transparency and absorption (EITA) using a control laser with a Laguerre-Gaussian (LG) profile instead of the usual Gaussian profile, and observe significant narrowing of the resonance widths. Aligning the probe beam to the central hole in the doughnut-shaped LG control beam allows simultaneously a strong control intensity required for high signal-to-noise ratio and a low intensity in the probe region required to get narrow resonances. Experiments with an expanded Gaussian control and a second-order LG control show that transit time and orbital angular momentum do not play a significant role. This explanation is borne out by a density-matrix analysis with a radially varying control Rabi frequency. We observe these resonances using degenerate two-level transitions in the D-2 line of Rb-87 in a room temperature vapor cell, and an EIA resonance with width up to 20 times below the natural linewidth for the F = 2 -> F' = 3 transition. Thus the use of LG beams should prove advantageous in all applications of EITA and other kinds of pump-probe spectroscopy as well.

Low temperature growth of SnO2 nanowires by electron beam evaporation and their application in UV light detection

For the first time, high quality tin oxide (SnO2) nanowires have been synthesized at a low substrate temperature of 450 degrees C via vapor-liquid-solid mechanism using an electron beam evaporation technique. The grown nanowires have shown length of 2-4 mu m and diameter of 20-60 nm. High resolution transmission electron microscope studies on the grown nanowires have shown the single crystalline nature of the SnO2 nanowires. We investigated the effect of growth temperature and oxygen partial pressure on SnO2 nanowires growth. Variation of substrate temperature at a constant oxygen partial pressure of 4 x 10(-4) mbar suggested that a temperature equal to or greater than 450 degrees C was the best condition for phase pure SnO2 nanowires growth. The SnO2 nanowires grown on a SiO2 substrate were subjected to UV photo detection. The responsivity and quantum efficiency of SnO2 NWs photo detector (at 10V applied bias) was 12 A/W and 45, respectively, for 12 mu W/cm(2) UV lamp (330 nm) intensity on the photo detector.

Molecular beam epitaxial growth of (11-22) GaN on m-plane sapphire

The structural and optical properties of semipolar (1 1 -2 2) GaN grown on m-plane (1 0 -1 0) sapphire substrates by molecular beam epitaxy were investigated. An in-plane orientation relationship was found to be 1 -1 0 0] GaN parallel to 1 2-1 0] sapphire and -1 -1 2 3] GaN parallel to 0 0 0 1] sapphire for semipolar GaN on m-plane sapphire substrates. The near band emission (NBE) was found at 3.432 eV, which is slightly blue shifted compared to the bulk GaN. The Raman E-2 (high) peak position observed at 569.1 cm(-1), which indicates that film is compressively strained. Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/semipolar GaN Schottky diode found to be 0.55 eV and 2.11, respectively obtained from the TE model.

Growth of Germanium Nanowires by electron beam evaporation

Growth of high density germanium nanowires on Si substrates by electron beam evaporation (EBE) has been demonstrated using gold as catalyst. The germanium atoms are provided by evaporating germanium by electron beam evaporation (EBE) technique. Effect of substrate (growth) temperature and deposition time on the growth of nanowires has studied. The morphology of the nanowires was investigated by field emission scanning electron microscope (FESEM). It has been observed that a narrow temperature window from 380 degrees C to 480 degrees C is good for the nanowires growth as well as restriction on the maximum length of nanowires. It is also observed that high substrate temperature leading to the completely absence of nanowire growth.

Continuous beam of laser-cooled Yb atoms

We demonstrate the launching of laser-cooled Yb atoms in a continuous atomic beam. The continuous cold beam has significant advantages over the more-common pulsed fountain, which was also demonstrated by us recently. The cold beam is formed in the following steps: i) atoms from a thermal beam are first Zeeman-slowed to a small final velocity; ii) the slowed atoms are captured in a two-dimensional magneto-optic trap (2D-MOT); and iii) atoms are launched continuously in the vertical direction using two sets of moving-molasses beams, inclined at +/- 15 degrees to the vertical. The cooling transition used is the strongly allowed S-1(0) -> P-1(1) transition at 399 nm. We capture about 7x10(6) atoms in the 2D-MOT, and then launch them with a vertical velocity of 13m/s at a longitudinal temperature of 125(6) mK. Copyright (C) EPLA, 2013

Indium Assisted Growth of Silicon Nanowires by Electron beam evaporation

Silicon nanowires were grown on Si substrates by electron beam evaporation (EBE) was demonstrated using Indium as an alternate catalyst to gold. We have studied the effect of substrate (growth) temperature, deposition time on the growth of nanowires. It was observed that a narrow temperature window from 300 degrees C to 400 degrees C for the nanowires growth. At growth temperature >= 400 degrees C suppression of nanowires growth was observed due to evaporation of catalyst particle. It is also observed that higher deposition times also leading to the absence of nanowire growth as well as uncatalyzed deposition on the nanowires side walls due to limited surface diffusion of ad atoms and catalyst evaporation.

Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy

This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) substrates along with photovoltaic characteristics of GaN/p-Si heterojunctions fabricated with substrate nitridation and in absence of substrate nitridation. The high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopic studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN epifilms grown with silicon nitride buffer layer when compared with the sample grown without silicon nitride buffer layer. The low temperature PL shows a free excitonic (FX) emission peak at 3.51 eV at the temperature of 5 K with a very narrow line width of 35 meV. Temperature dependent PL spectra follow the Varshni equation well and peak energy blue shifts by similar to 63 meV from 300 to 5 K. Raman data confirms the strain free nature and reasonably good crystallinity of the films. The GaN/p-Si heterojunctions fabricated without substrate nitridation show a superior photovoltaic performance compared to the devices fabricated in presence of substrate nitridation. The discussions have been carried out on the junction properties. Such single junction devices exhibit a promising fill factor and conversion efficiency of 23.36 and 0.12 %, respectively, under concentrated AM1.5 illumination.