Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors

Silicon on Insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100V and average leakage current densities at 70 V were only 55 nA/ sq cm. MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45x1011cn-2 for a dose of 2.7Mrad

Detection of DNA base variation and cytosine methylation at a single nucleotide site using a highly sensitive fluorescent probe

A fluorescent DNA probe containing an anthracene group attached via an anucleosidic linker can identify all four DNA bases at a single site as well as the epigenetic modification C/5-MeC via a hybridisation sensing assay.

Waveguide-to-microstrip transition at G-band using elevated E-plane probe

A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than 210dB between 150 and 200 GHz and S21 ¼ 2 4dB at centre band (180GHz) for two transitions in back-to-back configuration.

METHYL-ORANGE AS A PROBE OF PHOTOELECTROCHEMICAL REACTIONS SENSITIZED BY COLLOIDAL CDS

The kinetics of photoreduction of methyl orange by ethylenediaminetetraacetic acid (EDTA) sensitized by colloidal CdS are reported as a function of [methyl orange], [O2] and [EDTA]. The results are interpreted using a reaction scheme which was proposed in an earlier paper for the same reaction sensitized by a powdered dispersion of highly crystalline CdS. An analysis of the results for the CdS colloid based on this reaction scheme shows that the rate of dye reduction by photogenerated electrons is approximately 50 times greater than the rate of oxygen reduction and the rate of scavenging of the photogenerated holes is approximately 7000 times greater than the rate of recombination. These findings are discussed in the light of similar observations reported for powdered CdS.