On the thermal noise introduced by a resistor in a circuit

Comentari sobre l'article publicat anteriorment pels mateixos autors: Vargas, M; Pallás, R; The seemingly paradoxical noise behaviour some active circuits. IEEE Transactions on Instrumentation and Measurement. 1994, vol. 43, núm. 5, p. 764-767

Quantum transport phenomena and shallow impurity states in CdSb

This work is dedicated to investigation of the energy spectrum of one of the most anisotropic narrow-gap semiconductors, CdSb. At the beginning of the present studies even the model of its energy band structure was not clear. Measurements of galvanomagnetic effects in wide temperature range (1.6 - 300 K) and in magnetic fields up to 30 T were chosen for clarifying of the energy spectrum in the intentionally undoped CdSb single crystals and doped with shallow impurities (In, Ag). Detection of the Shubnikov - de Haas oscillations allowed estimating the fundamental energy spectrum parameters. The shapes of the Fermi surfaces of electrons (sphere) and holes (ellipsoid), the number of the equivalent extremums for valence band (2) and their positions in the Brillouin zone were determined for the first time in this work. Also anisotropy coefficients, components of the tensor of effective masses of carriers, effective masses of density of states, nonparabolicity of the conduction and valence bands, g-factor and its anisotropy for n- and p-CdSb were estimated for the first time during these studies. All the results obtained are compared with the cyclotron resonance data and the corresponding theoretical calculations for p-CdSb. This is basic information for the analyses of the complex transport properties of CdSb and for working out the energy spectrum model of the shallow energy levels of defects and impurities in this semiconductor. It was found out existence of different mechanisms of hopping conductivity in the presence of metal - insulator transition induced by magnetic field in n- and p-CdSb. Quite unusual feature opened in CdSb is that different types of hopping conductivity may take place in the same crystal depending on temperature, magnetic field or even orientation of crystal in magnetic field. Transport properties of undoped p-CdSb samples show that the anisotropy of the resistivity in weak and strong magnetic fields is determined completely by the anisotropy of the effective mass of the holes. Temperature and magnetic field dependence of the Hall coefficient and magnetoresistance is attributed to presence of two groups of holes with different concentrations and mobilities. The analysis demonstrates that below Tcr ~ 20 K and down to ~ 6 - 7 K the low-mobile carriers are itinerant holes with energy E2 ≈ 6 meV. The high-mobile carriers, at all temperatures T < Tcr, are holes activated thermally from a deeper acceptor band to itinerant states of a shallower acceptor band with energy E1 ≈ 3 meV. Analysis of temperature dependences of mobilities confirms the existence of the heavy-hole band or a non-equivalent maximum and two equivalent maxima of the light-hole valence band. Galvanomagnetic effects in n-CdSb reveal the existence of two groups of carriers. These are the electrons of a single minimum in isotropic conduction band and the itinerant electrons of the narrow impurity band, having at low temperatures the energies above the bottom of the conduction band. It is found that above this impurity band exists second impurity band of only localized states and the energy of both impurity bands depend on temperature so that they sink into the band gap when temperature is increased. The bands are splitted by the spin, and in strong magnetic fields the energy difference between them decreases and redistribution of the electrons between the two impurity bands takes place. Mobility of the conduction band carriers demonstrates that scattering in n-CdSb at low temperatures is strongly anisotropic. This is because of domination from scattering on the neutral impurity centers and increasing of the contribution to mobility from scattering by acoustic phonons when temperature increases. Metallic conductivity in zero or weak magnetic field is changed to activated conductivity with increasing of magnetic field. This exhibits a metal-insulator transition (MIT) induced by the magnetic field due to shift of the Fermi level from the interval of extended states to that of the localized states of the electron spectrum near the edge of the conduction band. The Mott variablerange hopping conductivity is observed in the low- and high-field intervals on the insulating side of the MIT. The results yield information about the density of states, the localization radius of the resonant impurity band with completely localized states and about the donor band. In high magnetic fields this band is separated from the conduction band and lies below the resonant impurity bands.

Disseny d’un circuit analògic reconfigurable

En l’actualitat, l’electrònica digital s’està apoderant de la majoria de camps de desenvolupament, ja que ofereix un gran ventall de possibilitats que permeten fer front a gran quantitat de problemàtiques. Poc a Poc s’ha anat prescindint el màxim possible de l’electrònica analògica i en el seu lloc s’han utilitzat sistemes microprocessats, PLDs o qualsevol altre dispositiu digital, que proporciona beneficis enlluernadors davant la fatigosa tasca d’implementar una solució analògica.Tot i aquesta tendència, és inevitable la utilització de l’electrònica analògica, ja que el mon que ens envolta és l’entorn en el que han de proporcionar servei els diferents dissenys que es realitzen, i aquest entorn no és discret sinó continu. Partint d’aquest punt ben conegut hem de ser conscients que com a mínim els filtres d’entrada i sortida de senyal juntament amb els convertidors D/A A/D mai desapareixeran.Així doncs, aquests circuits analògics, de la mateixa forma que els digitals, han de sercomprovats un cop dissenyats, és en aquest apartat on el nostre projecte desenvoluparà un paper protagonista, ja que serà la eina que ha de permetre obtenir les diferents senyals característiques d’un determinat circuit, per posteriorment realitzar els tests que determinaran si es compleix el rang de correcte funcionament, i en cas de no complir, poder concretar quin paràmetre és el causant del defecte

El circuit comercial de Barcino: reflexions al voltant de les marques amfòriques

Barcino és encara avui una ciutat romana poc coneguda de la província Tarraconense, que segons la majoria d’especialistes fou fundada per raons polítiques. Malgrat això, una anàlisi detallada de les característiques econòmiques suggereixen que es va crear com a resultat de necessitats comercials, ja que es localitzava en una de les millors zones portuàries del NE de la península. L’article present pretén reconstruir tot el circuit comercial de Barcino a partir de les nombroses estampilles d’àmfores trobades en les excavacions. Aquestes marques comercials no solament evidencien una pròspera producció de vi en l’àrea, sinó també la corresponent demanda externa.

Réouverture [du circuit automobile] de Brooklands, Miss Ivy Cummings et son père [Sydney] : [photographie de presse] / [Agence Rol]

Référence bibliographique : Rol, 58772

Réouverture [du circuit automobile] de Brooklands : [photographie de presse] / [Agence Rol]

Référence bibliographique : Rol, 58773

Determination of the size of quantum dots by fluorescence spectroscopy.

There has been a lack of quick, simple and reliable methods for determination of nanoparticle size. An investigation of the size of hydrophobic (CdSe) and hydrophilic (CdSe/ZnS) quantum dots was performed by using the maximum position of the corresponding fluorescence spectrum. It has been found that fluorescence spectroscopy is a simple and reliable methodology to estimate the size of both quantum dot types. For a given solution, the homogeneity of the size of quantum dots is correlated to the relationship between the fluorescence maximum position (FMP) and the quantum dot size. This methodology can be extended to the other fluorescent nanoparticles. The employment of evolving factor analysis and multivariate curve resolution-alternating least squares for decomposition of the series of quantum dots fluorescence spectra recorded by a specific measuring procedure reveals the number of quantum dot fractions having different diameters. The size of the quantum dots in a particular group is defined by the FMP of the corresponding component in the decomposed spectrum. These results show that a combination of the fluorescence and appropriate statistical method for decomposition of the emission spectra of nanoparticles may be a quick and trusted method for the screening of the inhomogeneity of their solution.

Moment Operators of Observables in Quantum Mechanics, with Applications to Quantization and Homodyne Detection

The questions studied in this thesis are centered around the moment operators of a quantum observable, the latter being represented by a normalized positive operator measure. The moment operators of an observable are physically relevant, in the sense that these operators give, as averages, the moments of the outcome statistics for the measurement of the observable. The main questions under consideration in this work arise from the fact that, unlike a projection valued observable of the von Neumann formulation, a general positive operator measure cannot be characterized by its first moment operator. The possibility of characterizing certain observables by also involving higher moment operators is investigated and utilized in three different cases: a characterization of projection valued measures among all the observables is given, a quantization scheme for unbounded classical variables using translation covariant phase space operator measures is presented, and, finally, a mathematically rigorous description is obtained for the measurements of rotated quadratures and phase space observables via the high amplitude limit in the balanced homodyne and eight-port homodyne detectors, respectively. In addition, the structure of the covariant phase space operator measures, which is essential for the above quantization, is analyzed in detail in the context of a (not necessarily unimodular) locally compact group as the phase space.

Dilaton quantum cosmology in two dimensions

We consider a renormalizable two-dimensional model of dilaton gravity coupled to a set of conformal fields as a toy model for quantum cosmology. We discuss the cosmological solutions of the model and study the effect of including the back reaction due to quantum corrections. As a result, when the matter density is below some threshold new singularities form in a weak-coupling region, which suggests that they will not be removed in the full quantum theory. We also solve the Wheeler-DeWitt equation. Depending on the quantum state of the Universe, the singularities may appear in a quantum region where the wave function is not oscillatory, i.e., when there is not a well-defined notion of classical spacetime.

Quantum black holes: Nonperturbative corrections and no-veil scenario

A common belief is that further quantum corrections near the singularity of a large black hole should not substantially modify the semiclassical picture of black hole evaporation; in particular, the outgoing spectrum of radiation should be very close to the thermal spectrum predicted by Hawking. In this paper we explore a possible counterexample: in the context of dilaton gravity, we find that nonperturbative quantum corrections which are important in strong-coupling regions may completely alter the semiclassical picture, to the extent that the presumptive spacelike boundary becomes timelike, changing in this way the causal structure of the semiclassical geometry. As a result, only a small fraction of the total energy is radiated outside the fake event horizon; most of the energy comes in fact at later retarded times and there is no problem of information loss. This may constitute a general characteristic of quantum black holes, that is, quantum gravity might be such as to prevent the formation of global event horizons.

Disseny de circuit de proves de traçabilitat amb rfid

ITENE és un institut tecnològic de recerca situat a Paterna (València). Té una plantapilot especialitzada en logística on les empreses que ho vulguin (mitjançant convenis,en règim de lloguer, etc.), poden utilitzar les instal•lacions (magatzem intel•ligent,aplicacions RFID, etc.), per provar els seus productes i simular processos de logística itraçabilitat.En aquesta planta s'ha detectat la necessitat de poder provar nous productes cometiquetes, detectors i processadors equipats amb tecnologia RFID (Identificació perRadiofreqüència). Aquesta tecnologia consisteix en passar informació que conté unaetiqueta “intel•ligent” cap a un terminal (PC) mitjançant uns detectors que, perproximitat, poden llegir la informació. Per exemple, quan un camió ple de mercaderiesprèviament etiquetades, passa per un pòrtic amb detectors RFID, es genera unainformació que passa directament a un terminal. Al moment es pot saber què porta elcamió, quantitat, color, mides, etc. Si això es combina amb un ERP, es pot descomptarde l'estoc en temps real. De fet s'utilitza per moltes aplicacions logística, control deprocessos de fabricació, traçabilitat de productes, etc.Per aquest motiu, ITENE, mitjançant el contacte de AIFOS SOLUTIONS S.L (empresaespecialitzada en RFID) ha encarregat un sistema de transportadors de banda per provarnoves solucions.L'objecte del present projecte consisteix en el disseny i automatització d'un sistema de 4cintes transportadores 2 elevadors per tal de fer un circuit tancat per moure caixes en un“bucle” de forma automàtica. L'objectiu és “llençar” caixes plenes de productes (etiquetats amb RFID) mitjançant untransportador equipat amb un pòrtic que té instal•lats diversos detectors de radiofreqüència,i poder-ne provar la correcta detecció a diferents velocitats. Un “buffer” s'encarrega desubministrar les caixes d'una en una que, un cop acabat el circuit, tornen al lloc d'on hansortit. Per donar un producte per bo, es realitzen tests de diverses hores i se n'obté unaestadística de lectures bones/dolentes. Si la ràtio és la desitjada es dóna per bo elproducte.Per aconseguir un disseny correcte s'ha utilitzat diferents eines CAD per dimensionar elsistema de transportadors i els seus elements. Tota l'aplicació està realitzada en 3Dmitjançant el software AutoCAD 3D. L'abast d'aquest projecte inclourà la solució mecànica i pneumàtica del sistema, aixícom el seu muntatge i tot el referent a les normes de seguretat per tal que el sistemacompleixi la normativa referida a la seguretat de màquines

Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD

In this work, we have studied the texturization process of (100) c-Si wafers using a low concentration potassium hydroxide solution in order to obtain good quality textured wafers. The optimization of the etching conditions have led to random but uniform pyramidal structures with good optical properties. Then, symmetric heterojunctions were deposited by Hot-Wire CVD onto these substrates and the Quasi-Steady-State PhotoConductance technique was used to measure passivation quality. Little degradation in the effective lifetime and implicit open circuit voltage of these devices (< 20 mV) was observed in all cases. It is especially remarkable that for big uniform pyramids, the open-circuit voltage is comparable to the values obtained on flat substrates.

Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact.