Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications

In the present studies, various copper delafossite materials viz; CuAlO2, CuGaO2, CuFeO2 , CuGa1-xFexO2, CuYO2 and CuCaxY1-xO2 were synthesised by solid state reaction technique. These copper delafossite materials were grown in thin film form by rf magnetron sputtering technique. In general copper delafossites exhibit good optical transparency. The conductivity of the CuYO2 could be improved by Ca doping or by oxygen intercalation by annealing the film in oxygen atmosphere. It has so far been impossible to improve the p-type conductivity of CuGaO2 significantly by doping Mg or Ca on the Ga site. The ptype conductivity is presumed to be due to oxygen doping or Cu Vacancies [6]. Reports in literature show, oxygen intercalation or divalent ion doping on Ga site is not possible for CuGaO2 thin films to improve the p-type conductivity. Sintered powder and crystals of CuFeO2 have been reported as the materials having the highest p-type conductivity [14, 15] among the copper and silver delafossites. However the CuFeO2 films are found to be less transparent in the visible region compared to CuGaO2. Hence in the present work, the solid solution between the CuGaO2 and CuFeO2 was effected by solid state reaction, varying the Fe content. The CuGa1-xFexO2 with Fe content, x=0.5 shows an increase in conductivity by two orders, compared to CuGaO2 but the transparency is only about 50% in the visible region which is less than that of CuGaO2 The synthesis of α−AgGaO2 was carried out by two step process which involves the synthesis of β-AgGaO2 by ion exchange reaction followed by the hydrothermal conversion of the β-AgGaO2 into α-AgGaO2. The trace amount of Ag has been reduced substantially in the two step synthesis compared to the direct hydrothermal synthesis. Thin films of α-AgGaO2 were prepared on silicon and Al2O3 substrates by pulsed laser deposition. These studies indicate the possibility of using this material as p-type material in thin film form for transparent electronics. The room temperature conductivity of α-AgGaO2 was measured as 3.17 x 10-4 Scm-1and the optical band gap was estimated as 4.12 eV. A transparent p-n junction thin film diode on glass substrate was fabricated using p-type α-AgGaO2 and n-ZnO.AgCoO2 thin films with 50% transparency in the visible region were deposited on single crystalline Al2O3 and amorphous silica substrates by RF magnetron sputtering and p type conductivity of AgCoO2 was demonstrated by fabricating transparent p-n junction diode with AgCoO2 as p-side and ZnO: Al as n-side using sputtering. The junction thus obtained was found to be rectifying with a forward to reverse current of about 10 at an applied voltage of 3 V.The present study shows that silver delafossite thin films with p-type conductivity can be used for the fabrication of active devices for transparent electronics applications.

Vibrational behaviour of bcc Cu-based shape memory alloys close to the martensitic transition

Experimental data from ultrasonic and inelastic neutron scattering measurements are analyzed for different families of Cu-based shape-memory alloys. It is shown that the transition occurs at a value, independent of composition and alloy family, of the ratio between the elastic constants associated with the two shears necessary to accomplish the lattice distortion from the bcc to the close-packed structure. The zone boundary frequency of the TA2[110] branch evaluated at the transition point (TM), weakly depends, for each family, on composition. A linear relationship between this frequency and the inverse of the elastic constant C', both quantities evaluated at TM, has been found, in agreement with the prediction of a Landau model proposed for martensitic transformations.

Third order elastic constants of bcc Cu-Al-Ni

We have measured the changes in the ultrasonic wave velocity, induced by the application of uniaxial stresses in a Cu-Al-Ni single crystal. From these measurements, the complete set of third-order elastic constants has been obtained. The comparison of results for Cu-Al-Ni with available data for other Cu-based alloys has shown that all these alloys exhibit similar anharmonic behavior. By using the measured elastic constants in a Landau expansion for elastic phase transitions, we have been able to give an estimation of the value of a fourth-order elastic constants combination. The experiments have also shown that the application of a stress in the [001] direction, reduces the material resistance to a (110)[110] shear and thus favors the martensitic transition.

On the stability of the bcc phase in Cu-Al-Mn shape memory alloys

Measurements of the entropy change at the martensitic transition of two composition-related sets of Cu-Al-Mn shape-memory alloys are reported. It is found that most of the entropy change has a vibrational origin, and depends only on the particular close-packed structure of the low-temperature phase. Using data from the literature for other Cu-based alloys, this result is shown to be general. In addition, it is shown that the martensitic structure changes from 18R to 2H when the ratio of conduction electrons per atom reaches the same value as the eutectoid point in the equilibrium phase diagram. This finding indicates that the structure of the metastable low-temperature phase is reminiscent of the equilibrium structure.

Disorder-induced critical phenomena in magnetically glassy Cu-Al-Mn alloys

Measurements of magnetic hysteresis loops in Cu-Al-Mn alloys of different Mn content at low temperatures are presented. The loops are smooth and continuous above a certain temperature, but exhibit a magnetization discontinuity below that temperature. Scaling analysis suggest that this system displays a disorder-induced phase transition line. Measurements allow one to determine the critical exponents ß=0.03±0.01 and ß¿=0.4±0.1, which coincide with those reported recently in a different system, thus supporting the existence of universality for disorder-induced critical points.

Kinetics of martensitic transitions in Cu-Al-Mn under thermal cycling: Analysis at multiple length scales

In this paper we study the evolution of the kinetic features of the martensitic transition in a Cu-Al-Mn single crystal under thermal cycling. The use of several experimental techniques including optical microscopy, calorimetry, and acoustic emission, has enabled us to perform an analysis at multiple scales. In particular, we have focused on the analysis of avalanche events (associated with the nucleation and growth of martensitic domains), which occur during the transition. There are significant differences between the kinetics at large and small length scales. On the one hand, at small length scales, small avalanche events tend to sum to give new larger events in subsequent loops. On the other hand, at large length scales the large domains tend to split into smaller ones on thermal cycling. We suggest that such different behavior is the necessary ingredient that leads the system to the final critical state corresponding to a power-law distribution of avalanches.

Hysteresis in a system driven by either generalized force or displacement variables: martensitic phase transition in single-crystalline Cu-Zn-Al

We report on experiments aimed at comparing the hysteretic response of a Cu-Zn-Al single crystal undergoing a martensitic transition under strain-driven and stress-driven conditions. Strain-driven experiments were performed using a conventional tensile machine while a special device was designed to perform stress-driven experiments. Significant differences in the hysteresis loops were found. The strain-driven curves show reentrant behavior yield point which is not observed in the stress-driven case. The dissipated energy in the stress-driven curves is larger than in the strain-driven ones. Results from recently proposed models qualitatively agree with experiments.