937 resultados para PLATFORM SWITCHING
Resumo:
The time response of optical switching properties of Sb thin films under focused laser pulses is investigated. The results show that the response course can be divided into onset, opening, and closing stages. Formulas for their lengths are given. The onset and opening times decrease with increasing pumping light power density. The closing time is about 150 ns. For optical memory, if the power density of the readout and recording lasers changes from 5 x 10(9) to 15 x 10(9) W/m(2), the onset time changes from 2.5 to 0.30 mus, and the opening time is on the nanosecond scale. (C) 2003 Society of Photo-Optical Instrumentation Engineers.
Resumo:
Spintronics, or spin electronics, is aimed at efficient control and manipulation of spin degrees of freedom in electron systems. To comply with demands of nowaday spintronics, the studies of electron systems hosting giant spin-orbit-split electron states have become one of the most important problems providing us with a basis for desirable spintronics devices. In construction of such devices, it is also tempting to involve graphene, which has attracted great attention because of its unique and remarkable electronic properties and was recognized as a viable replacement for silicon in electronics. In this case, a challenging goal is to lift spin degeneracy of graphene Dirac states. Here, we propose a novel pathway to achieve this goal by means of coupling of graphene and polar-substrate surface states with giant Rashba-type spin-splitting. We theoretically demonstrate it by constructing the graphene@BiTeCl system, which appears to possess spin-helical graphene Dirac states caused by the strong interaction of Dirac and Rashba electrons. We anticipate that our findings will stimulate rapid growth in theoretical and experimental investigations of graphene Dirac states with real spin-momentum locking, which can revolutionize the graphene spintronics and become a reliable base for prospective spintronics applications.
Resumo:
We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.
Resumo:
A planar waveguide laser operating in a negative branch unstable resonator is Q-switched by an acoustooptic mod latorin anew configuration, providing effective, high-speed switching. The laser using a 200-mu m Nd:YAG core, face pumped by 10 laser diode bars, has produced 100-W output in a good beam quality at 100-kHz pulse rate, and 4.5 mJ at lower frequency with 15-ns pulse duration.
Resumo:
We demonstrate passive Q-switching of short-length double-clad Tm3+-doped silica fiber lasers near 2 mu m pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr2+:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 mu] and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at similar to 10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed. (c) 2008 Elsevier B.V. All rights reserved.