The nature of gypsum mortars for external rendering in Spain. Traditional manufacture and mineralogy

The present work focuses on gypsum mortar manufactu red in traditional kilns and used historically as exterior rendering. A documentation survey has been carried out followed by an experimental analysis using geological techniques. Conclusion shows that traditional gypsum is formed by anhydrite and inert active impurities (crystalline amorphous silica; cl ays and hydraulic phases) produced by the craft manufacture process of the system, in a kiln with a 200ºC to 1000ºC temperature interval, and continuo us fuel supply during 36 hours. Anhydrite together wit h the hydraulic phases set at consecutive time peri ods and with the presence of moisture improve the physi cal and mechanical properties of the final product. The hydration system is of great complexity and sho ws a very slow kinetics when in presence of impurities

Influence of high aluminium content on the mechanical properties of directionally solidified multicrystalline silicon

The purpose of this research is the mechanical characterisation of multicrystalline silicon crystallised from silicon feedstock with a high content of aluminium for photovoltaic applications. The mechanical strength, fracture toughness and elastic modulus were measured at different positions within the multicrystalline silicon block to quantify the impact of the segregation of impurities on these mechanical properties. Aluminium segregated to the top of the block and caused extensive micro-cracking of the silicon matrix due to the thermal mismatch between silicon and the aluminium inclusions. Silicon nitride inclusions reduced the fracture toughness and caused failure by radial cracking in its surroundings due to its thermal mismatch with silicon. However, silicon carbide increased the fracture toughness and elastic modulus of silicon.

Review of experimental results related to the operation of intermediate band solar cells

The intermediate band solar cell (IBSC) has drawn the attention of the scientific community as a means to achieve high-efficiency solar cells. Complete IBSC devices have been manufactured using quantum dots, highly mismatched alloys, or bulk materials with deep-level impurities. Characterization of these devices has led, among other experimental results, to the demonstration of the two operating principles of an IBSC: the production of the photocurrent from the absorption of two below bandgap energy photons and the preservation of the output voltage of the solar cell. This study offers a thorough compilation of the most relevant reported results for the variety of technologies investigated and provides the reader with an updated record of IBSC experimental achievements. A table condensing the reported experimental results is presented, which provides information at a glance about achievements, as well as pending results, for every studied technology.

Polyaniline-coated carbon papers for supercapacitor electrodes

Graphene and carbon nanotubes are promising materials for supercapacitor electrodes because of their high specific surface area and excellent electrical, thermal, and mechanical properties. However, these materials suffer from a high manufacturing cost and some aggregation of graphene layers or the presence of toxic residual metallic impurities of carbon nanotubes.

Photovoltaic application of the V, Cr and Mn-doped cadmium thioindate

The CdIn2S4 spinel semiconductor is a potential photovoltaic material due to its energy band gap and absorption properties. These optoelectronic properties can be potentiality improved by the insertion of intermediate states into the energy bandgap. We explore this possibility using M = Cr, V and Mn as an impurity. We analyze with first-principles almost all substitutions of the host atoms by M at the octahedral and tetrahedral sites in the normal and inverse spinel structures. In almost all cases, the impurities introduce deeper bands into the host energy bandgap. Depending on the site substitution, these bands are full, empty or partially-full. It increases the number of possible inter-band transitions and the possible applications in optoelectronic devices. The contribution of the impurity states to these bands and the substitutional energies indicate that these impurities are energetically favorable for some sites in the host spinel. The absorption coefficients in the independent-particle approximation show that these deeper bands open additional photon absorption channels. It could therefore increase the solar-light absorption with respect to the host.

Ionization energies of amphoteric-doped Cu2ZnSnS4: Photovoltaic application

The substitution of Cu, Sn or Zn in the quaternary Cu2ZnSnS4 semiconductor by impurities that introduce intermediate states in the energy bandgap could have important implications either for photovoltaic or spintronic applications. This allows more generation–recombination channels than for the host semiconductor. We explore and discuss this possibility by obtaining the ionization energies from total energy first-principles calculations. The three substitutions of Cu, Sn and Zn by impurities are analyzed. From these results we have found that several impurities have an amphoteric behavior with the donor and acceptor energies in the energy bandgap. In order to analyze the role of the ionization energies in both the radiative and non-radiative processes, the host energy bandgap and the acceptor and the donor energies have been obtained as a function of the inward and outward impurity-S displacements. We carried out the analysis for both the natural and synthetic CZTS. The results show that the ionization energies are similar, whereas the energy band gaps are different.

Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells

With the final goal of integrating III-V materials on silicon substrates for tandem solar cells, the influence of the Metal-Organic Vapor Phase Epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. An important degradation of minority carrier lifetime during the surface preparation (i.e. H2 anneal) has been observed. Three different mechanisms have been proposed for explaining this behavior: 1) the introduction of extrinsic impurities coming from the reactor; 2) the activation of intrinsic lifetime killing impurities coming from the wafer itself; and finally, 3) the formation of crystal defects, which eventually become recombination centers. The effect of the emitter formation by phosphorus diffusion has also been evaluated. In this sense, it has been reported that lifetime can be recovered during the emitter formation either by the effect of the P on extracting impurities, or by the role of the atomic hydrogen on passivating the defects.

Manufacturing of self-passivating tungsten based alloys by different powder metallurgical routes

Self-passivating tungsten based alloys will provide a major safety advantage compared to pure tungsten when used as first wall armor of future fusion reactors, due to the formation of a protective oxide layer which prevents the formation of volatile and radioactive WO3 in case of a loss of coolant accident with simultaneous air ingress. Bulk WCr10Ti2 alloys were manufactured by two different powder metallurgical routes: (1) mechanical alloying (MA) followed by hot isostatic pressing (HIP) of metallic capsules, and (2) MA, compaction, pressureless sintering in H2 and subsequent HIPing without encapsulation. Both routes resulted in fully dense materials with homogeneous microstructure and grain sizes of 300 nm and 1 μm, respectively. The content of impurities remained unchanged after HIP, but it increased after sintering due to binder residue. It was not possible to produce large samples by route (2) due to difficulties in the uniaxial compaction stage. Flexural strength and fracture toughness measured on samples produced by route (1) revealed a ductile-to-brittle-transition temperature (DBTT) of about 950 °C. The strength increased from room temperature to 800 °C, decreasing significantly in the plastic region. An increase of fracture toughness is observed around the DBTT.

How do Impurity Inclusions Influence the Mechanical Properties of Multicrystalline Silicon?

The purpose of this research is to characterise the mechanical properties of multicrystalline silicon for photovoltaic applications that was crystallised from silicon feedstock with a high content of several types of impurities. The mechanical strength, fracture toughness and elastic modulus were measured at different positions within a multicrystalline silicon block to quantify the effect of impurity segregation on these mechanical properties. The microstructure and fracture surfaces of the samples was exhaustively analysed with a scanning electron microscope in order to correlate the values of mechanical properties with material microstructure. Fracture stresses values were treated statistically via the Weibull statistics. The results of this research show that metals segregate to the top of the block, produce moderate microcracking and introduce high thermal stresses. Silicon oxide is produced at the bottom part of the silicon block, and its presence significantly reduces the mechanical strength and fracture toughness of multicrystalline silicon due to both thermal and elastic mismatch between silicon and the silicon oxide inclusions. Silicon carbide inclusions from the upper parts of the block increase the fracture toughness and elastic modulus of multicrystalline silicon. Additionally, the mechanical strength of multicrystalline silicon can increase when the radius of the silicon carbide inclusions is smaller than ~10 µm. The most damaging type of impurity inclusion for the multicrystalline silicon block studied in this work was amorphous silicon oxide. The oriented precipitation of silicon oxide at grain and twin boundaries eases the formation of radial cracks between inclusions and decreases significatively the mechanical strength of multicrystalline silicon. The second most influencing type of impurity inclusions were metals like aluminium and copper, that cause spontaneous microcracking in their surroundings after the crystallisation process, therefore reducing the mechanical response of multicrystalline silicon. Therefore, solar cell producers should pay attention to the content of metals and oxygen within the silicon feedstock in order to produce solar cells with reliable mechanical properties.

Electrical investigation of p-type 4H-SiC heavily doped by ion implantation

In the last decades, an increasing interest in the research field of wide bandgap semiconductors was observed, mostly due to the progressive approaching of silicon-based devices to their theoretical limits. 4H-SiC is an example among these, and is a mature compound for applications. The main advantages offered 4H-SiC in comparison with silicon are an higher breakdown field, an higher thermal conductivity, a higher operating temperature, very high hardness and melting point, biocompatibility, but also low switching losses in high frequencies applications and lower on-resistances in unipolar devices. Then, 4H-SiC power devices offer great performance improvement; moreover, they can work in hostile environments where silicon power devices cannot function. Ion implantation technology is a key process in the fabrication of almost all kinds of SiC devices, owing to the advantage of a spatially selective doping. This work is dedicated to the electrical investigation of several differently-processed 4H-SiC ion- implanted samples, mainly through Hall effect and space charge spectroscopy experiments. It was also developed the automatic control (Labview) of several experiments. In the work, the effectiveness of high temperature post-implant thermal treatments (up to 2000°C) were studied and compared considering: (i) different methods, (ii) different temperatures and (iii) different duration of the annealing process. Preliminary p + /n and Schottky junctions were also investigated as simple test devices. 1) Heavy doping by ion implantation of single off-axis 4H-SiC layers The electrical investigation is one of the most important characterization of ion-implanted samples, which must be submitted to mandatory post-implant thermal treatment in order to both (i) recover the lattice after ion bombardment, and (ii) address the implanted impurities into lattice sites so that they can effectively act as dopants. Electrical investigation can give fundamental information on the efficiency of the electrical impurity activation. To understand the results of the research it should be noted that: (a) To realize good ohmic contacts it is necessary to obtain spatially defined highly doped regions, which must have conductivity as low as possible. (b) It has been shown that the electrical activation efficiency and the electrical conductivity increase with the annealing temperature increasing. (c) To maximize the layer conductivity, temperatures around 1700°C are generally used and implantation density high till to 10 21 cm -3 . In this work, an original approach, different from (c), is explored by the using very high annealing temperature, around 2000°C, on samples of Al + -implant concentration of the order of 10 20 cm -3 . Several Al + -implanted 4H-SiC samples, resulting of p-type conductivity, were investigated, with a nominal density varying in the range of about 1-5∙10 20 cm -3 and subjected to two different high temperature thermal treatments. One annealing method uses a radiofrequency heated furnace till to 1950°C (Conventional Annealing, CA), the other exploits a microwave field, providing a fast heating rate up to 2000°C (Micro-Wave Annealing, MWA). In this contest, mainly ion implanted p-type samples were investigated, both off-axis and on-axis <0001> semi-insulating 4H-SiC. Concerning p-type off-axis samples, a high electrical activation of implanted Al (50-70%) and a compensation ratio below 10% were estimated. In the work, the main sample processing parameters have been varied, as the implant temperature, CA annealing duration, and heating/cooling rates, and the best values assessed. MWA method leads to higher hole density and lower mobility than CA in equivalent ion implanted layers, resulting in lower resistivity, probably related to the 50°C higher annealing temperature. An optimal duration of the CA treatment was estimated in about 12-13 minutes. A RT resistivity on the lowest reported in literature for this kind of samples, has been obtained. 2) Low resistivity data: variable range hopping Notwithstanding the heavy p-type doping levels, the carrier density remained less than the critical one required for a semiconductor to metal transition. However, the high carrier densities obtained was enough to trigger a low temperature impurity band (IB) conduction. In the heaviest doped samples, such a conduction mechanism persists till to RT, without significantly prejudice the mobility values. This feature can have an interesting technological fall, because it guarantee a nearly temperature- independent carrier density, it being not affected by freeze-out effects. The usual transport mechanism occurring in the IB conduction is the nearest neighbor hopping: such a regime is effectively consistent with the resistivity temperature behavior of the lowest doped samples. In the heavier doped samples, however, a trend of the resistivity data compatible with a variable range hopping (VRH) conduction has been pointed out, here highlighted for the first time in p-type 4H-SiC. Even more: in the heaviest doped samples, and in particular, in those annealed by MWA, the temperature dependence of the resistivity data is consistent with a reduced dimensionality (2D) of the VRH conduction. In these samples, TEM investigation pointed out faulted dislocation loops in the basal plane, whose average spacing along the c-axis is comparable with the optimal length of the hops in the VRH transport. This result suggested the assignment of such a peculiar behavior to a kind of spatial confinement into a plane of the carrier hops. 3) Test device the p + -n junction In the last part of the work, the electrical properties of 4H-SiC diodes were also studied. In this case, a heavy Al + ion implantation was realized on n-type epilayers, according to the technological process applied for final devices. Good rectification properties was shown from these preliminary devices in their current-voltage characteristics. Admittance spectroscopy and deep level transient spectroscopy measurements showed the presence of electrically active defects other than the dopants ones, induced in the active region of the diodes by ion implantation. A critical comparison with the literature of these defects was performed. Preliminary to such an investigation, it was assessed the experimental set up for the admittance spectroscopy and current-voltage investigation and the automatic control of these measurements.

Estudo de metodologias de controle de qualidade do Mo-99 utilizado no preparo de geradores de Mo-99/Tc-99m

O 99mTc é o radionuclídeo mais utilizado em medicina nuclear. No Brasil os geradores de 99Mo/99mTc são produzidos exclusivamente pelo Centro de Radiofarmácia do IPEN-CNEN/SP, com 99Mo importado de diferentes fornecedores. O 99Mo (t1/2 = 66 h), por ser um produto de fissão do 235U, pode conter impurezas radionuclídicas prejudiciais à saúde humana. Dessa forma, para que o gerador seja utilizado de forma segura, é necessário que o 99Mo seja avaliado por ensaios de controle de qualidade e atenda à alguma especificação descrita em farmacopeia. A Farmacopeia Europeia (FE) apresenta monografia, com parâmetros (identificação, pureza radioquímica e pureza radionuclídica), métodos de análise, e limites, para avaliação da qualidade da solução de [99Mo] na forma de molibdato de sódio, que é utilizada como matéria-prima no preparo dos geradores de 99Mo/99mTc. No entanto, observa-se uma dificuldade na implementação e execução dos métodos por parte dos produtores de geradores, com pouca literatura sobre o assunto, provavelmente devido à falta de praticidade dos métodos propostos e à extensa lista de reagentes utilizados. Nesse trabalho foram avaliados vários parâmetros de qualidade do 99Mo descritos na monografia da FE. Foram estudados métodos de separação do 99Mo de suas impurezas radionuclídicas por extração em fase sólida (SPE) e por TLC. Após separação por SPE, foi proposta a quantificação de metais por ICP-OES para avaliar a porcentagem de retenção de Mo e a porcentagem de recuperação de Ru e Te e Sr em diversos tipos de cartuchos, em substituição ao uso de radiotraçadores. Observou-se que a marca de cartucho de SPE para separação do 99Mo recomendada pela FE apresentou baixa recuperação para Ru, quando comparado aos outros cartuchos de troca aniônica disponíveis no mercado. Amostras de 99Mo de diferentes fornecedores mundiais foram analisadas. Observou-se que é possível realizar a quantificação de 103Ru em amostras de 99Mo mesmo com tempos de decaimento acima de 4 semanas. Um método alternativo de separação do 99Mo do 131I por TLC apresentou resultados promissores. Não foi feita a quantificação das impurezas radionuclídicas emissoras beta e alfa. Todas as amostras analisadas apresentaram resultados dentro das especificações da FE para pureza radioquímica (>95%) e pureza radionuclídica.

Desenvolvimento de microesferas de vidro fosfato contendo hólmio para uso em radioterapia interna seletiva

A radioterapia interna seletiva é uma alternativa para o tratamento de alguns tipos de cânceres como o carcinoma hepatocelular (CHC), ou câncer de fígado primário. Neste tratamento, microesferas de vidro ou polimérica contendo em sua estrutura radionuclídeos emissores de partículas β- são introduzidas no fígado por meio da artéria hepática e migram, preferencialmente, para regiões hipervascularizadas, que são características da presença de tecido canceroso. Neste trabalho, foram propostos o desenvolvimento de vidros fosfato contendo hólmio para produção de microesferas e sua aplicação em radioterapia interna seletiva no Brasil. O vidro desenvolvido apresentou durabilidade química adequada, densidade de 2,7(3)g/cm3, alta estabilidade térmica e as impurezas encontradas não inviabilizam o tratamento. As microesferas foram produzidas pelos métodos da chama e da queda gravitacional e foram caracterizadas por diversas técnicas em que se observaram forma, granulometria, atividade e biocompatibilidade apropriados para o tratamento pretendido. Propõe-se que as microesferas possam ser submetidas a testes in vivo.

Estudo da cristalinidade de filmes finos de nitreto de índio e simulado pelo pacote de programas Wien2k

Neste trabalho, foi utilizado o método de deposição assistida por feixe de íons (IBAD na sigla em inglês) para produção de filmes finos de nitreto de índio em substratos de silício (111) e Safira-C. Variando as condições de deposição e utlilizando a técnica de difração de raios-X, investigou-se com o intuito de obter os parâmetros que resultam em filmes finos com melhor grau de cristalinidade. Os filmes produzidos a 380C apresentaram alta cristalinidade, superior àqueles a 250C. Temperaturas muito superiores a 380C não ocasionam a formação de filme cristalino de InN, como foi observado ao utilizar a temperatura de 480C; o mesmo se observa ao utilizar temperatura ambiente. Na temperatura considerada adequada ,de 380C, obteve-se que a utilização de Ra, ou seja, a razão de fluxo de partículas entre o nitrogênio e índio, em torno de 2,3 permite obter um melhor grau de cristalinização, o qual decresce conforme se diverge desse valor. A comparação entre difratogramas de amostras produzidas com e sem a evaporação prévia de titânio, o qual é possível observar um deslocamento dos picos do InN, indicam que o efeito Gettering permite a redução de impurezas no filme, principalmente de oxigênio. Utilizou-se a técnica de Retroespalhamento de Rutherford para obtenção da composição dos elementos e o perfil de profundidade. Notou-se uma forte mistura dos elementos do substrato de silício e safira com o nitreto de índio mesmo próximos a superfície. A presença indesejável de impurezas, principalmente o oxigênio, durante a deposição de filmes finos é praticamente inevitável. Desta forma, cálculos ab initio baseados na Teoria do Funcional da Densidade (DFT) foram realizados para investigar defeitos isolados e complexos de oxigênio no nitreto de índio e a sua influência nas propriedades óticas. Considerou-se diferentes concentrações de oxigênio (x=2,76, 8,32, 11,11 e 22,22%) aplicando-se o método PBEsolGGA e TB-mBJ para o tratamento da energia e potencial de troca e correlação. Obteve-se que é energeticamente favorável o oxigênio existir principalmente como defeito carregado e isolado. Os resultados utilizando a aproximação de TB-mBJ indicam um estreitamento do bandgap conforme a concentração de oxigênio aumenta. Entretanto, a alta contribuição do efeito de Moss-Burstein resulta num efetivo alargamento do band gap, gerando valores de band gap ótico maiores que no do bulk de nitreto de índio.

Erratum: Suppression of localization in kronig-penney models with correlated disorder (Vol. 49, PG 147, 1994)

We consider the electron dynamics and transport properties of one-dimensional continuous models with random, short-range correlated impurities. We develop a generalized Poincare map formalism to cast the Schrodinger equation for any potential into a discrete set of equations, illustrating its application by means of a specific example. We then concentrate on the case of a Kronig-Penney model with dimer impurities. The previous technique allows us to show that this model presents infinitely many resonances (zeroes of the reflection coefficient at a single dimer) that give rise to a band of extended states, in contradiction with the general viewpoint that all one-dimensional models with random potentials support only localized states. We report on exact transfer-matrix numerical calculations of the transmission coefFicient, density of states, and localization length for various strengths of disorder. The most important conclusion so obtained is that this kind of system has a very large number of extended states. Multifractal analysis of very long systems clearly demonstrates the extended character of such states in the thermodynamic limit. In closing, we brieBy discuss the relevance of these results in several physical contexts.

First Order Phase Transition in a 3D disordered system

We present a detailed numerical study on the effects of adding quenched impurities to a three dimensional system which in the pure case undergoes a strong first order phase transition (specifically, the ferromagnetic/paramagnetic transition of the site-diluted four states Potts model). We can state that the transition remains first-order in the presence of quenched disorder (a small amount of it) but it turns out to be second order as more impurities are added. A tricritical point, which is studied by means of Finite-Size Scaling, separates the first-order and second-order parts of the critical line. The results were made possible by a new definition of the disorder average that avoids the diverging-variance probability distributions that arise using the standard methodology. We also made use of a recently proposed microcanonical Monte Carlo method in which entropy, instead of free energy, is the basic quantity.