Beiträge zur kenntnis der meeresalgen.

No. 1-5 extracted from Wissenschaftliche meeresuntersuchungen, neue folgs, 2. bd., 1897; no. 5-13; "Sonderabdruck aus: Wissenschaftliche meeresuntersuchungen ... Neue folge. III. [-V.] bd., abteilung Helgoland [1899-1912]"

Étude et passivation des défauts introduits par la gravure de vias sur cellule photovoltaïque triple jonction

Malgré l'augmentation constante de l'efficacité des cellules photovoltaïques multi-jonctions destinées au photovoltaïque concentré, des pertes de performances subsistent à haute concentration solaire. Elles sont principalement causées par un ombrage excessif dû aux métallisations ou par effet Joule à cause de la résistance série. Une des solutions à ce problème est de reporter le contact métallique en face avant sur la face arrière grâce à des vias métallisés et isolés électriquement. Avec cette architecture, les pertes dues à l'effet Joule et à l'ombrage seront limitées et des gains en efficacité sont attendus. Toutefois, l'intégration de vias sur des cellules photovoltaïques triple jonction favorise la recombinaison électron-trou en surface et peut provoquer une perte de performances de ces dispositifs. Ce mémoire présente les travaux de recherche effectués visant à étudier précisément cette problématique ainsi qu'à proposer des solutions pour limiter ces pertes. L'objectif est d'évaluer les pertes de performances de cellules photovoltaïques triple jonction suite à l'intégration de vias. Dans un second temps, l'objectif secondaire vise à limiter les pertes grâce à des traitements de passivation. Les résultats et solutions qu'apporte ce projet représentent une étape clé dans la réalisation de cette nouvelle architecture de contact électrique pour cellules photovoltaïques. En effet, les conclusions de ce projet de recherche permettent de valider la possibilité d'obtenir des gains en efficacité grâce à cette architecture. De plus, les procédés de microfabrication présentés dans ce projet de recherche proposent des solutions afin d'intégrer des vias sur ces hétérostructures tout en limitant les pertes en performances.

Alteraciones cutáneas de miembros superiores por exposición a agroquímicos en cultivos de arroz, departamento de La Guajira 2016

Introducción: la vida, salud y trabajo del agricultor tienen sus propias particularidades, estilos y actividades, su calidad de vida puede afectarse por exponerse a sustancias químicas, convirtiéndola en una labor muy riesgosa. Objetivo: establecer la prevalencia de las alteraciones cutáneas de miembros superiores por exposición a agroquímicos en cultivos de arroz. Material y método: estudio de corte transversal, población de 100 trabajadores, ubicadas en zona rural de Fonseca La Guajira, durante el año 2016. Se analizaron variables sociodemográficas, laborales y clínicas relacionadas. Para el análisis estadístico se aplicaron las pruebas de Shapiro-Wilk, Ji-Cuadrado de Pearson, medidas de asociación con OR y sus respectivos intervalos de confianza del 95%, análisis multivariado con una Regresión Logística Incondicional, nivel de significancia del 5% (p<0.05) para pruebas estadísticas. Resultados: el 98,9% fueron hombres, las edades oscilaron entre los 18 y 83 años (media de 43,7 años). El 40,91% reporto fumigar y el, 15,15% abona. Reportaron tener rinitis alérgica el 21,2%, alergia ocular 25,3%, asma 16,41%, eczemas en las manos 19,15% y ronchas o habones 17,95%; el 40,31% uso herbicidas, 8,77% fungicidas, 35,09% insecticidas, 14,04% fertilizante y 1,75% coadyuvante. La dependencia es prácticamente nula entre la aparición de eczemas y categoría toxica (p=0,021); R de Pearson (R=0,121; p=0,247) con correlación positiva; no existe una relación entre el número de personas con alergias dérmicas y la toxicidad (X2= 2,271; p=0,518), el R de Pearson (R=-0,152; p=0,150). Conclusión: la exposición a agroquímicos sin las condiciones mínimas de seguridad y salud en el trabajo, se relaciona con la aparición de alteraciones cutáneas.

(Ba3MTiMO9)-Ti-III-O-V (M-III = Fe, Ga, Y, Lu, M-V = Nb, Ta, Sb) perovskite oxides Synthesis, structure and dielectric properties

We describe the synthesis structures and dielectric properties of new perovskite oxides of the formula (Ba3MTiMO9)-Ti-III-O-V for M-III = Fe Ga Y Lu and M-V = Nb Ta Sb While M-V = Nb and Ta oxides adopt disordered/partially ordered 3C perovskite structures where M-III/Ti/M-V metal-oxygen octahedra are corner connected the M-V = Sb oxides show a distinct preference for the 6H structure where Sb-V/Ti-IV metal-oxygen octahedra share a common face forming (Sb Ti)O-9 dimers that are corner-connected to the (MO6)-O-III octahedra The preference of antimony oxides (Sb-V 4d(10)) for the 6H structure which arises from a special Sb-V-O chemical bonding that tends to avoid linear Sb-O-Sb linkages unlike Nb-V/Ta-V d(0) atoms which prefer similar to 180 degrees Nb/Ta-O-Nb/Ta linkages - is consistent with the crystal chemistry of M-V-O oxides in general The dielectric properties reveal a significant difference among Mill members All the oxides with the 3C structure excepting those with Mill = Fe show a normal low loss dielectric behaviour with epsilon = 20-60 in the temperature range 50-400 degrees C the M-III = Fe members with this structure (M-V = Nb Ta) display a relaxor-like ferroelectric behaviour with large E values at frequencies <= 1 MHz (50-500 degrees C) (C) 2010 Elsevier Masson SAS All rights reserved

Synthesis of zero valent iron nanoparticles and application to removal of arsenic(III) and arsenic(V) from water

Recently nano scale zero valent iron particles (nZVI) have been considered as smart adsorbent for environmental and groundwater remediation. Although several synthetic methods are available for the preparation of nZVI, air stable nZVI are not available for remediation works. Further, challenges demand synthesis of nZVI without stabilizers and capping agents. A modified methodology for the synthesis of air stable nZVI has been developed without any capping agents and characterized by powder X-Ray Diffraction (XRD), Scanning Electron Microscopy Energy-dispersive X-Ray (SEM-EDS), Transmission Electron Microscopy (TEM) and X-Ray Photoelectron Spectroscopy (XPS). The results of the present study suggest that the synthetic nZVI are air-stable over a period of one year and consists of particles of 30-40 nm in diameter. Although a layer of less than 3 am thick oxide/hydroxide is observed by TEM and XPS, it appears to be due to oxidation of outer surface during analysis. Adsorption study has shown that the synthetic nZVI are more effective adsorbent than the commercial nZVI and can remove simultaneously arsenite As-III] and arsenate As-V] from water without prior reduction of As-V to As-III. The removal process is adsorptive rather than precipitative and the removal of As-III is greater than that of As-V.

P.v.b. virgillii maronis : bucolicorum, eclogaex., georgicorum, libri iii., aeneidos, libri xii. et in ea, mauri servii honorati : grammatici comentarii, ex antiquiss : exemplaribus longe meliores et auctiores : ex bibliotheca petri danielis i.c. : accessit fabij planciadis fulgentij liber de continentia virgiliana, auctior e mss. codd. item iunij philargyrij commentariolus in bucolica & georgica virgilij. : cum certissimo et copiosissimo indice

As Bucólicas são constituídas de dez éclogas, consideradas como traduzidas ou imitadas de Teócrito. As Geórgias são um poema didático no qual se acentua a predileção de Virgílio pela vida campestre. A Eneida é uma utopia política que o poeta não conseguiu acabar e foi publicada contra a sua vontade expressa.

Taller Integrado 3A (Proyectos V, Construcción I y Urbanismo III)

Nivel educativo: Grado. Duración (en horas): Más de 50 horas

Nous sommes tousjours au dela : a negação narrative do sujeito modern em Sur des vers de Virgile (ensaios III, cap.V) de Michel de Motaigne

Investigando a apresentação das ideias em Sobre versos de Virgílio, a tese demonstra como sua estruturação ambígua, onde tudo é constantemente negado por seus contrários, leva a um contínuo estado de confusão e perplexidade, tornando impossível a determinação lógica dos conceitos e conduzindo a um progressivo esvaziamento do texto enquanto signo direto do pensamento do autor. Por outro lado, partindo de uma perspectiva hermenêutica influenciada pela anatomia, a análise mostra que o uso sistemático e criativo das instâncias narrativas (autor, narrador, signatário), juntamente com a reunificação textual de diferentes Montaignes (presentes nos diversos estágio editoriais do ensaio), acaba por dissolver a própria noção de identidade a si do autor, tendo por consequência imediata sua disseminação em vários sujeitos diversos e contraditórios e, por fim, colocando em xeque a clássica percepção dos Ensaios com o nascimento da subjetividade moderna.

Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices. © 2010 IEEE.

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires

The effects of growth temperature and V/III ratio on the morphology and crystallographic phases of InP nanowires that are grown by metal organic chemical vapour deposition have been studied. We show that higher growth temperatures or higher V/III ratios promote the formation of wurtzite nanowires while zinc-blende nanowires are favourableat lower growth temperatures and lower V/III ratios. A schematic map of distribution of zinc-blende and wurtzite structures has been developed in the range of growth temperatures (400-510 °C) and V/III ratios (44 to 700) investigated in this study. © 2010 IOP Publishing Ltd.

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 degrees C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved.

Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD

Effects of V/III ratio on heavily Si doped InGaAs and InP were studied using low pressure metalorganic chemical vapor deposition (LP-MOCVD) at a growth temperature of 550degreesC. In InGaAs, as the V/III ratio decreases from 256 to 64, the carrier concentration increases from 3.0 x 10(18) to 5.8 x 10(18) cm(-3), and the lattice mismatch of InGaAs to InP was observed to vary from -5.70 x10(-4) to 1.49 x 10(-3). In InP, when the V/III ratio decreases from 230 to 92, the same trend as that in Si doped InGaAs was observed that the carrier concentration increases from 9.2 x 10(18) to 1.3 x 10(19) cm(-3). The change of AsH3 was found to have stronger effect on Si incorporation in InGaAs at lower growth temperature than at higher growth temperature. (C) 2003 Elsevier B.V. All rights reserved.