Self-organized superlattices along the [001] growth direction in In0.52Al0.48As layers grown on nominally (001) InP substrates by molecular beam epitaxy

Horizontal self-organized superlattice structures consisting of alternating In-rich and Al-rich layers formed naturally during solid-source molecular beam epitaxy (MBE) growth of In0.52Al0.48As on exactly (001) InP substrates, with In and At fluxes unchanged. The growth temperatures were changed from 490 to 510 degrees C, the most commonly used growth temperature for In0.52Al0.48As alloy. No self-organized superlattices (SLs) were observed at the growth temperature 490 degrees C, and self-organized SLs were observed in InAlAs layers at growth temperatures ranging from 498 to 510 degrees C. The results show that the period of the SLs is very highly regular, with the value of similar to 6 nm, and the composition of In or Al varies approximately sinusoidally along the [001] growth direction. The theoretical simulation results confirm that the In composition modulation amplitude is less than 0.02 relative the In composition of the In0.52Al0.48As lattice matched with the InP substrate. The influence of InAs self-organized quantum wires on the spontaneously formed InxAl1-xAs/InyAl1-yAs SLs was also studied and the formation of self-organized InxAl1-xAs/InyAl1-yAs SLs was attributed to the strain-mediated surface segregation process during MBE growth of In0.52Al0.48As alloy. (C) 2005 Published by Elsevier Ltd.

Electronic structure of paramagnetic In1-xMnx as nanowires

The electronic structure, spin splitting energies, and g factors of paramagnetic In1-xMnxAs nanowires under magnetic and electric fields are investigated theoretically including the sp-d exchange interaction between the carriers and the magnetic ion. We find that the effective g factor changes dramatically with the magnetic field. The spin splitting due to the sp-d exchange interaction counteracts the Zeeman spin splitting. The effective g factor can be tuned to zero by the external magnetic field. There is also spin splitting under an electric field due to the Rashba spin-orbit coupling which is a relativistic effect. The spin-degenerated bands split at nonzero k(z) (k(z) is the wave vector in the wire direction), and the spin-splitting bands cross at k(z) = 0, whose k(z)-positive part and negative part are symmetrical. A proper magnetic field makes the k(z)-positive part and negative part of the bands asymmetrical, and the bands cross at nonzero k(z). In the absence of magnetic field, the electron Rashba coefficient increases almost linearly with the electric field, while the hole Rashba coefficient increases at first and then decreases as the electric field increases. The hole Rashba coefficient can be tuned to zero by the electric field.

Hole Rashba effect and g-factor in InP nanowires

The hole Rashba effect and g-factor in InP nanowires in the presence of electric and magnetic fields which bring spin splitting are investigated theoretically in the framework of eight-band effective-mass envelop function theory, by expanding the lateral wave function in Bessel functions. It is well known that the electron Rashba coefficient increases nearly linearly with the electric field. As the Rashba spin splitting is zero at zero k(z) ( the wave vector along the wire direction), the electron g-factor at k(z) = 0 changes little with the electric field. While we find that as the electric field increases, the hole Rashba coefficient increases at first, then decreases. It is noticed that the hole Rashba coefficient is zero at a critical electric field. The hole g-factor at k(z) = 0 changes obviously with the electric field.

Rashba spin-orbit coupling in InSb nanowires under transverse electric field

We investigate the Rashba spin-orbit coupling brought by transverse electric field in InSb nanowires. In small k(z) (k(z) is the wave vector along the wire direction) range, the Rashba spin-orbit splitting energy has a linear relationship with k(z), so we can define a Rashba coefficient similarly to the quantum well case. We deduce some empirical formulas of the spin-orbit splitting energy and Rashba coefficient, and compare them with the effective-mass calculating results. It is interesting to find that the Rashba spin-orbit splitting energy decreases as k(z) increases when k(z) is large due to the k(z)-quadratic term in the band energy. The Rashba coefficient increases with increasing electric field, and shows a saturating trend when the electric field is large. As the radius increases, the Rashba coefficient increases at first, then decreases. The effects of magnetic fields along different directions are discussed. The case where the magnetic field is along the wire direction or the electric field direction are similar. The spin state in an energy band changes smoothly as k(z) changes. The case where the magnetic field is perpendicular to the wire direction and the electric field direction is quite different from the above two cases, the k(z)-positive and negative parts of the energy bands are not symmetrical, and the energy bands with different spins cross at a k(z)-nonzero point, where the spin splitting energy and the effective g factor are zero.

Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate

Single-crystalline alpha-Si3N4 nanowires are controlled to grow perpendicular to the wet-etched trenches in the SiO0.94 film on the plane of the Si substrate without metal catalysis. A detailed characterization is carried out by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The photoluminescence at 600 nm from alpha-Si3N4 nanowires is attributed to the recombination at the defect state formed by the Si dangling bond N3 equivalent to Si-center dot. The growth mechanism is considered to be related to the catalysis and nitridation of SiO nanoclusters preferably re-deposited around the inner corner of the trenches, as well as faster Si diffusion along the slanting side walls of the trenches. This simple direction-controlled growth method is compatible with the CMOS process, and could facilitate the fabrication of alpha-Si3N4 nanoelectronic or nanophotonic devices on the Si platform.

Electronic structure and g factors of narrow-gap zinc-blende nanowires and nanorods

The Hamiltonian in the framework of eight-band effective-mass approximation of the zinc-blende nanowires and nanorods in the presence of external homogeneous magnetic field is given in the cylindrical coordinate. The electronic structure, optical properties, magnetic energy levels, and g factors of the nanowires and nanorods are calculated. It is found that the electron states consist of many hole-state components, due to the coupling of the conduction band and valence band. For the normal bands which are monotone functions of |k(z)|, long nanorods can be modeled by the nanowires, the energy levels of the nanorods approximately equal the values of the energy band E(k(z)) of the nanowires with the same radius at a special k(z), where k(z) is the wave vector in the wire direction. Due to the coupling of the states, some of the hole energy bands of the nanowires have their highest points at k(z)=0. Especially, the highest hole state of the InSb nanowires is not at the k(z)=0 point. It is an indirect band gap. For these abnormal bands, nanorods can not be modeled by the nanowires. The energy levels of the nanorods show an interesting plait-like pattern. The linear polarization factor is zero, when the aspect ratio L/2R is smaller than 1, and increases as the length increases. The g(z) and g(x) factors as functions of the k(z), radius R and length L are calculated for the wires and rods, respectively. For the wires, the g(z) of the electron ground state increases, and the g(z) of the hole ground state decreases first, then increases with the k(z) increasing. For the rods, the g(z) and g(x) of the electron ground state decrease as the R or the L increases. The g(x) of the hole ground state decreases, the g(z) of the hole ground state increases with the L increasing. The variation of the g(z) of the wires with the k(z) is in agreement with the variation of the g(z) of the rods with the L.

A new development on ANN in China - Biomimetic pattern recognition and multi weight vector neurons

A new model of pattern recognition principles-Biomimetic Pattern Recognition, which is based on "matter cognition" instead of "matter classification", has been proposed. As a important means realizing Biomimetic Pattern Recognition, the mathematical model and analyzing method of ANN get breakthrough: a novel all-purpose mathematical model has been advanced, which can simulate all kinds of neuron architecture, including RBF and BP models. As the same time this model has been realized using hardware; the high-dimension space geometry method, a new means to analyzing ANN, has been researched.

An adaptive controller for a class of nonlinear system using direction basis function

For a class of nonlinear dynamical systems, the adaptive controllers are investigated using direction basis function (DBF) in this paper. Based on the criterion of Lyapunov' stability, DBF is designed which guarantees that the output of the controlled system asymptotically tracks the reference signals. Finally, the simulation shows the good tracking effectiveness of the adaptive controller.

Cancer classification based on direction-basis-function neural networks

Automatic molecular classification of cancer based on DNA microarray has many advantages over conventional classification based on morphological appearance of the tumor. Using artificial neural networks is a general approach for automatic classification. In this paper, Direction-Basis-Function neuron and Priority-Ordered algorithm are applied to neural networks. And the leukemia gene expression dataset is used as an example to testify the classifier. The result of our method is compared to that of SVM. It shows that our method makes a better performance than SVM.

Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)

The self-organized InAs/In0.52Al0.48As nanostructure were grown on InP (001) using molecular beam epitaxy (MBE). The nanostructure has been studied using transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The edge dislocations with the Burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. The results show that in the region near an edge dislocation, no InAs wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. The mechanisms for the formation of the [001]/2 edge dislocations were discussed.

Performance of an embedded optical vector matrix multiplication processor architecture

An embedded architecture of optical vector matrix multiplier (OVMM) is presented. The embedded architecture is aimed at optimising the data flow of vector matrix multiplier (VMM) to promote its performance. Data dependence is discussed when the OVMM is connected to a cluster system. A simulator is built to analyse the performance according to the architecture. According to the simulation, Amdahl's law is used to analyse the hybrid opto-electronic system. It is found that the electronic part and its interaction with optical part form the bottleneck of system.

Steady-state bright-dark vector spatial solitons in biased photorefractive-photovoltaic crystals

We show that bright-dark vector solitons are possible in biased photorefractive-photovoltaic crystals under steady-state conditions, which result from both the bulk photovoltaic effect and the spatially nonuniform screening of the external bias field. The analytical solutions of these vector solitons can be obtained in the case of \sigma\ much less than 1, where sigma is the parameter controlling the intensities of the two optical beams. In the limit of -1 < sigma much less than 1, these vector solitons can also be determined by use of simple numerical integration procedures. When the bulk photovoltaic effect is neglectable, these vector solitons are bright-dark vector screening solitons studied previously in the \sigma\ much less than 1 regime, and predict bright-dark vector screening solitons in the -1 < sigma less than or equal to 1 regime. When the external bias field is absent, these vector solitons predict bright-dark vector photovoltaic solitons in closed and open circuits. (C) 2002 Elsevier Science B.V. All rights reserved.

Two-component model for the interstellar scattering in direction to the Vela pulsar

This paper discusses a rigorous treatment of the refractive scintillation of pulsar PSR B0833-45 caused by a two-component interstellar scattering medium. It is assumed that the interstellar scattering medium is composed of a thin screen ISM and an extended interstellar medium. We consider that the scattering of the thin screen concentrates in a thin layer presented by a delta function distribution and that the scattering density of the extended irregular medium satisfies the Gaussian distribution. We investigate and develop equations for the flux density structure function corresponding to this two-component ISM geometry in the scattering density distribution and compare our result with that of the Vela pulsar observations. We conclude that the refractive scintillation caused by this two-component ISM scattering gives a more satisfactory explanation for the observed flux density variation of the Vela pulsar than does the single extended medium model. The level of refractive scintillation is strongly sensitive to the distribution of scattering material along the line of sight. The logarithmic slope of the structure function is sensitive to thin screen location and is relatively insensitive to the scattering strength of the thin screen medium. Therefore, the proposed model can be applied to interpret the structure function of flux density observed in pulsar PSR B0833-45. The result suggests that the medium consists of a discontinuous distribution of plasma turbulence embedded in the Vela supernova remnant. Thus our work provides some insight into the distribution of the scattering along the line of sight to the Vela pulsar.