Building memristor applications: from device model to circuit design

Since the memristor was first built in 2008 at HP Labs, no end of devices and models have been presented. Also, new applications appear frequently. However, the integration of the device at the circuit level is not straightforward, because available models are still immature and/or suppose high computational loads, making their simulation long and cumbersome. This study assists circuit/systems designers in the integration of memristors in their applications, while aiding model developers in the validation of their proposals. We introduce the use of a memristor application framework to support the work of both the model developer and the circuit designer. First, the framework includes a library with the best-known memristor models, being easily extensible with upcoming models. Systematic modifications have been applied to these models to provide better convergence and significant simulations speedups. Second, a quick device simulator allows the study of the response of the models under different scenarios, helping the designer with the stimuli and operation time selection. Third, fine tuning of the device including parameters variations and threshold determination is also supported. Finally, SPICE/Spectre subcircuit generation is provided to ease the integration of the devices in application circuits. The framework provides the designer with total control overconvergence, computational load, and the evolution of system variables, overcoming usual problems in the integration of memristive devices.

Conceptual design of offshore platform supply vessel based on hybrid diesel generator-fuel cell power plant

Nowadays increasing fuel prices and upcoming pollutant emission regulations are becoming a growing concern for the shipping industry worldwide. While fuel prices will keep rising in future years, the new International Convention for the Prevention of Pollution from Ships (MARPOL) and Sulphur Emissions Control Areas (SECA) regulations will forbid ships to use heavy fuel oils at certain situations. To fulfil with these regulations, the next step in the marine shipping business will comprise the use of cleaner fuels on board as well as developing new propulsion concept. In this work a new conceptual marine propulsion system is developed, based on the integration of diesel generators with fuel cells in a 2850 metric tonne of deadweight platform supply vessel. The efficiency of the two 250 kW methanol-fed Solid Oxide Fuel Cell (SOFC) system installed on board combined with the hydro dynamically optimized design of the hull of the ship will allow the ship to successfully operate at certain modes of operation while notably reduce the pollutant emissions to the atmosphere. Besides the cogeneration heat obtained from the fuel cell system will be used to answer different heating needs on board the vessel

Prototype emitter for use in subsurface drip irrigation: Manufacturing, hydraulic evaluation and experimental analyses

The current research aims to analyse theoretically and evaluate a self-manufactured simple design for subsurface drip irrigation (SDI) emitter to avoid root and soil intrusion. It was composed of three concentric cylindrical elements: an elastic silicone membrane; a polyethylene tube with two holes drilled on its wall for water discharge; and a vinyl polychloride protector system to wrap the other elements. The discharge of the emitter depends on the change in the membrane diameter when it is deformed by the water pressure. The study of the operation of this emitter is a new approach that considers mechanical and hydraulic principles. Thus, the estimation on the membrane deformation was based on classical mechanical stress theories in composite cylinders. The hydraulic principles considered the solid deformation due to force based on water pressure and the general Darcy–Weisbach head-loss equation. Twenty emitter units, with the selected design, were handcrafted in a lathe and were used in this study. The measured pressure/discharge relationship for the emitters showed good agreement with that calculated by the theoretical approach. The variation coefficient of the handcrafted emitters was high compared to commercial emitters. Results from field evaluations showed variable values for the relative flow variation, water emission uniformity and relative flow rate coefficients, but no emitter was obstructed. Therefore, the current emitter design could be suitable for SDI following further studies to develop a final prototype.

Application of user-centered design in the development of an atomated/assisted testing system for self-service devices

Automated Teller Machines (ATMs) are sensitive self-service systems that require important investments in security and testing. ATM certifications are testing processes for machines that integrate software components from different vendors and are performed before their deployment for public use. This project was originated from the need of optimization of the certification process in an ATM manufacturing company. The process identifies compatibility problems between software components through testing. It is composed by a huge number of manual user tasks that makes the process very expensive and error-prone. Moreover, it is not possible to fully automate the process as it requires human intervention for manipulating ATM peripherals. This project presented important challenges for the development team. First, this is a critical process, as all the ATM operations rely on the software under test. Second, the context of use of ATMs applications is vastly different from ordinary software. Third, ATMs’ useful lifetime is beyond 15 years and both new and old models need to be supported. Fourth, the know-how for efficient testing depends on each specialist and it is not explicitly documented. Fifth, the huge number of tests and their importance implies the need for user efficiency and accuracy. All these factors led us conclude that besides the technical challenges, the usability of the intended software solution was critical for the project success. This business context is the motivation of this Master Thesis project. Our proposal focused in the development process applied. By combining user-centered design (UCD) with agile development we ensured both the high priority of usability and the early mitigation of software development risks caused by all the technology constraints. We performed 23 development iterations and finally we were able to provide a working solution on time according to users’ expectations. The evaluation of the project was carried out through usability tests, where 4 real users participated in different tests in the real context of use. The results were positive, according to different metrics: error rate, efficiency, effectiveness, and user satisfaction. We discuss the problems found, the benefits and the lessons learned in the process. Finally, we measured the expected project benefits by comparing the effort required by the current and the new process (once the new software tool is adopted). The savings corresponded to 40% less effort (man-hours) per certification. Future work includes additional evaluation of product usability in a real scenario (with customers) and the measuring of benefits in terms of quality improvement.

Slow fashion and sustainability in Spain: How can local manufacturing improve sustainability and how do consumers respond?

"Slow Fashion" attempts to offset the demand for fast fashion and mass production (Fletcher, 2007). Consumers' response to sustainability-based practices is a limited discourse and studies for slow fashion concept are scarce. This study thus aims to enlighten the subject of how slow fashion concept could improve local economies and how Spanish consumers respond to such initiatives. This paper is based on an exploratory qualitative research for which focus group interviews including three group discussions with Spanish consumers were held. The data was examined by constant comparison analysis to present consumer insights. Moreover, a case study was conducted with a Spanish apparel brand. Saint Brissant was chosen since it manufactures in Spain to (i) ensure its products? high quality and (ii) to empower Spanish economy. This paper provides empirical insights. Even though local manufacturing was perceived to have a higher quality, Spanish consumers? behavioural intentions of using local brands were not high.Self-interest, mainly price and design, was recorded as the most influential purchase criteria. Furthermore, Saint Brissant case demonstrated that local manufacturing could boost local economies by creating workforce. However, governmental subsidies should be rearranged and consumers? perceptions should be improved to support local manufacturers in Spain.

Sustainable Living. Environmental integration in 15 vernacular Spanish houses

This research was published online by the Spanish Ministry of Public Works in 2012. It collects 20 years of work that contributes to recognizing and enhancing the vernacular architecture in Spain, which has no known author, but has significant values and shows a wide variety of adaptation examples to climatic and environmental conditions. The research analyzes in detail and from different scales 15 houses in different climatic conditions and geographic regions in order to go deeper into the specific characteristics of each one of them from the perspective of sustainability. These houses are located in Tenerife, Salamanca, Huelva, Granada, Toledo, Madrid, Menorca, Alicante, Mallorca, Almería, La Coruña, Cantabria, Huesca and Lugo. The article analyzes the traditional dwelling, the natural environment and conditions that surround it and intends to discover the formal dialogue among them, as well as the origin of the design strategies

Integral energy behaviour of photovoltaic semi-transparent glazing elements for building integration

La hipótesis general que esta tesis quiere demostrar es que la integración arquitectónica de sistemas fotovoltaicos semitransparentes (STPV) puede contribuir a mejorar la eficiencia energética de los edificios. Por lo tanto, la investigación se centra en el desarrollo de una metodología capaz de cuantificar la reducción de la demanda energética del edificio proporcionada por estas novedosas soluciones constructivas. Al mismo tiempo, los parámetros de diseño de las soluciones STPV se han analizado para establecer cuales presentan el mayor impacto sobre el balance energético global del edificio y por lo tanto tienen que ser cuidadosamente definidos a la hora de optimizar el comportamiento energético del mismo. A la luz de estos objetivos, la metodología de estudio se ha centrado en tres puntos principales:  Caracterizar el comportamiento energético global de sistemas STPV en condiciones de operación realistas, similares a las que se darían en un sistema real;  Caracterizar el comportamiento energético global de sistemas STPV en condiciones controladas, con el objetivo de estudiar la variación del comportamiento del los elementos en función de parámetro de diseño y operación;  Evaluar el potencial de ahorro energético global de los sistemas STPV en comparación con soluciones acristaladas convencionales al variar de las condiciones de contorno constituidas por los parámetros de diseño (como el grado de transparencia), las características arquitectónicas (como el ratio entre superficie acristalada y superficie opaca en la fachada del edificio) y las condiciones climáticas (cubriendo en particular la climatología europea). En síntesis, este trabajo intenta contribuir a comprender la interacción que existe entre los sistemas STPV y el edificio, proporcionando tanto a los fabricantes de los componentes como a los profesionales de la construcción información valiosa sobre el potencial de ahorro energético asociado a estos nuevos sistemas constructivos. Asimismo el estudio define los parámetros de diseño adecuados para lograr soluciones eficientes tanto en proyectos nuevos como de rehabilitación. ABSTRACT The general hypothesis this work seeks to demonstrate is that the architectural integration of Semi-Transparent Photovoltaic (STPV) systems can contribute to improving the energy efficiency of buildings. Accordingly, the research has focused on developing a methodology able to quantify the building energy demand reduction provided by these novel constructive solutions. At the same time, the design parameters of the STPV solution have been analysed to establish which of them have the greatest impact on the global energy balance of the building, and therefore which have to be carefully defined in order to optimize the building operation. In the light of these goals, the study methodology has focused on three main points:  To characterise the global energy behaviour of STPV systems in realistic operating conditions, similar to those in which a real system will operate;  To characterise the global energy behaviour of STPV systems in controlled conditions in order to study how the performance varies depending on the design and operating parameters;  To assess the global energy saving potential of STPV systems in comparison with conventional glazing solutions by varying the boundary conditions, including design parameters (such as the degree of transparency), architectural characteristics (such as the Window to Wall Ratio) and climatic conditions (covering the European climatic conditions). In summary, this work has sought to contribute to the understanding of the interaction between STPV systems and the building, providing both components manufacturers and construction technicians, valuable information on the energy savings potential of these new construction systems and defining the appropriate design parameters to achieve efficient solutions in both new and retrofitting projects.

CMOS integration of AlN based piezoelectric microcantilevers

El gran crecimiento de los sistemas MEMS (Micro Electro Mechanical Systems) así como su presencia en la mayoría de los dispositivos que usamos diariamente despertó nuestro interés. Paralelamente, la tecnología CMOS (Complementary Metal Oxide Semiconductor) es la tecnología más utilizada para la fabricación de circuitos integrados. Además de ventajas relacionadas con el funcionamiento electrónico del dispositivo final, la integración de sistemas MEMS en la tecnología CMOS reduce significantemente los costes de fabricación. Algunos de los dispositivos MEMS con mayor variedad de aplicaciones son los microflejes. Estos dispositivos pueden ser utilizados para la extracción de energía, en microscopios de fuerza atómica o en sensores, como por ejemplo, para biodetección. Los materiales piezoeléctricos más comúnmente utilizados en aplicaciones MEMS se sintetizan a altas temperaturas y por lo tanto no son compatibles con la tecnología CMOS. En nuestro caso hemos usado nitruro de alumino (AlN), que se deposita a temperatura ambiente y es compatible con la tecnología CMOS. Además, es biocompatible, y por tanto podría formar parte de un dispositivo que actúe como biosensor. A lo largo de esta tesis hemos prestado especial atención en desarrollar un proceso de fabricación rápido, reproducible y de bajo coste. Para ello, todos los pasos de fabricación han sido minuciosamente optimizados. Los parámetros de sputtering para depositar el AlN, las distintas técnicas y recetas de ataque, los materiales que actúan como electrodos o las capas sacrificiales para liberar los flejes son algunos de los factores clave estudiados en este trabajo. Una vez que la fabricación de los microflejes de AlN ha sido optimizada, fueron medidos para caracterizar sus propiedades piezoeléctricas y finalmente verificar positivamente su viabilidad como dispositivos piezoeléctricos. ABSTRACT The huge growth of MEMS (Micro Electro Mechanical Systems) as well as their presence in most of our daily used devices aroused our interest on them. At the same time, CMOS (Complementary Metal Oxide Semiconductor) technology is the most popular technology for integrated circuits. In addition to advantages related with the electronics operation of the final device, the integration of MEMS with CMOS technology reduces the manufacturing costs significantly. Some of the MEMS devices with a wider variety of applications are the microcantilevers. These devices can be used for energy harvesting, in an atomic force microscopes or as sensors, as for example, for biodetection. Most of the piezoelectric materials used for these MEMS applications are synthesized at high temperature and consequently are not compatible with CMOS technology. In our case we have used aluminum nitride (AlN), which is deposited at room temperature and hence fully compatible with CMOS technology. Otherwise, it is biocompatible and and can be used to compose a biosensing device. During this thesis work we have specially focused our attention in developing a high throughput, reproducible and low cost fabrication process. All the manufacturing process steps of have been thoroughly optimized in order to achieve this goal. Sputtering parameters to synthesize AlN, different techniques and etching recipes, electrode material and sacrificial layers are some of the key factors studied in this work to develop the manufacturing process. Once the AlN microcantilevers fabrication was optimized, they were measured to characterize their piezoelectric properties and to successfully check their viability as piezoelectric devices.

Design and Simulation of Deep Nanometer SRAM Cells under Energy, Mismatch, and Radiation Constraints

La fiabilidad está pasando a ser el principal problema de los circuitos integrados según la tecnología desciende por debajo de los 22nm. Pequeñas imperfecciones en la fabricación de los dispositivos dan lugar ahora a importantes diferencias aleatorias en sus características eléctricas, que han de ser tenidas en cuenta durante la fase de diseño. Los nuevos procesos y materiales requeridos para la fabricación de dispositivos de dimensiones tan reducidas están dando lugar a diferentes efectos que resultan finalmente en un incremento del consumo estático, o una mayor vulnerabilidad frente a radiación. Las memorias SRAM son ya la parte más vulnerable de un sistema electrónico, no solo por representar más de la mitad del área de los SoCs y microprocesadores actuales, sino también porque las variaciones de proceso les afectan de forma crítica, donde el fallo de una única célula afecta a la memoria entera. Esta tesis aborda los diferentes retos que presenta el diseño de memorias SRAM en las tecnologías más pequeñas. En un escenario de aumento de la variabilidad, se consideran problemas como el consumo de energía, el diseño teniendo en cuenta efectos de la tecnología a bajo nivel o el endurecimiento frente a radiación. En primer lugar, dado el aumento de la variabilidad de los dispositivos pertenecientes a los nodos tecnológicos más pequeños, así como a la aparición de nuevas fuentes de variabilidad por la inclusión de nuevos dispositivos y la reducción de sus dimensiones, la precisión del modelado de dicha variabilidad es crucial. Se propone en la tesis extender el método de inyectores, que modela la variabilidad a nivel de circuito, abstrayendo sus causas físicas, añadiendo dos nuevas fuentes para modelar la pendiente sub-umbral y el DIBL, de creciente importancia en la tecnología FinFET. Los dos nuevos inyectores propuestos incrementan la exactitud de figuras de mérito a diferentes niveles de abstracción del diseño electrónico: a nivel de transistor, de puerta y de circuito. El error cuadrático medio al simular métricas de estabilidad y prestaciones de células SRAM se reduce un mínimo de 1,5 veces y hasta un máximo de 7,5 a la vez que la estimación de la probabilidad de fallo se mejora en varios ordenes de magnitud. El diseño para bajo consumo es una de las principales aplicaciones actuales dada la creciente importancia de los dispositivos móviles dependientes de baterías. Es igualmente necesario debido a las importantes densidades de potencia en los sistemas actuales, con el fin de reducir su disipación térmica y sus consecuencias en cuanto al envejecimiento. El método tradicional de reducir la tensión de alimentación para reducir el consumo es problemático en el caso de las memorias SRAM dado el creciente impacto de la variabilidad a bajas tensiones. Se propone el diseño de una célula que usa valores negativos en la bit-line para reducir los fallos de escritura según se reduce la tensión de alimentación principal. A pesar de usar una segunda fuente de alimentación para la tensión negativa en la bit-line, el diseño propuesto consigue reducir el consumo hasta en un 20 % comparado con una célula convencional. Una nueva métrica, el hold trip point se ha propuesto para prevenir nuevos tipos de fallo debidos al uso de tensiones negativas, así como un método alternativo para estimar la velocidad de lectura, reduciendo el número de simulaciones necesarias. Según continúa la reducción del tamaño de los dispositivos electrónicos, se incluyen nuevos mecanismos que permiten facilitar el proceso de fabricación, o alcanzar las prestaciones requeridas para cada nueva generación tecnológica. Se puede citar como ejemplo el estrés compresivo o extensivo aplicado a los fins en tecnologías FinFET, que altera la movilidad de los transistores fabricados a partir de dichos fins. Los efectos de estos mecanismos dependen mucho del layout, la posición de unos transistores afecta a los transistores colindantes y pudiendo ser el efecto diferente en diferentes tipos de transistores. Se propone el uso de una célula SRAM complementaria que utiliza dispositivos pMOS en los transistores de paso, así reduciendo la longitud de los fins de los transistores nMOS y alargando los de los pMOS, extendiéndolos a las células vecinas y hasta los límites de la matriz de células. Considerando los efectos del STI y estresores de SiGe, el diseño propuesto mejora los dos tipos de transistores, mejorando las prestaciones de la célula SRAM complementaria en más de un 10% para una misma probabilidad de fallo y un mismo consumo estático, sin que se requiera aumentar el área. Finalmente, la radiación ha sido un problema recurrente en la electrónica para aplicaciones espaciales, pero la reducción de las corrientes y tensiones de los dispositivos actuales los está volviendo vulnerables al ruido generado por radiación, incluso a nivel de suelo. Pese a que tecnologías como SOI o FinFET reducen la cantidad de energía colectada por el circuito durante el impacto de una partícula, las importantes variaciones de proceso en los nodos más pequeños va a afectar su inmunidad frente a la radiación. Se demuestra que los errores inducidos por radiación pueden aumentar hasta en un 40 % en el nodo de 7nm cuando se consideran las variaciones de proceso, comparado con el caso nominal. Este incremento es de una magnitud mayor que la mejora obtenida mediante el diseño de células de memoria específicamente endurecidas frente a radiación, sugiriendo que la reducción de la variabilidad representaría una mayor mejora. ABSTRACT Reliability is becoming the main concern on integrated circuit as the technology goes beyond 22nm. Small imperfections in the device manufacturing result now in important random differences of the devices at electrical level which must be dealt with during the design. New processes and materials, required to allow the fabrication of the extremely short devices, are making new effects appear resulting ultimately on increased static power consumption, or higher vulnerability to radiation SRAMs have become the most vulnerable part of electronic systems, not only they account for more than half of the chip area of nowadays SoCs and microprocessors, but they are critical as soon as different variation sources are regarded, with failures in a single cell making the whole memory fail. This thesis addresses the different challenges that SRAM design has in the smallest technologies. In a common scenario of increasing variability, issues like energy consumption, design aware of the technology and radiation hardening are considered. First, given the increasing magnitude of device variability in the smallest nodes, as well as new sources of variability appearing as a consequence of new devices and shortened lengths, an accurate modeling of the variability is crucial. We propose to extend the injectors method that models variability at circuit level, abstracting its physical sources, to better model sub-threshold slope and drain induced barrier lowering that are gaining importance in FinFET technology. The two new proposed injectors bring an increased accuracy of figures of merit at different abstraction levels of electronic design, at transistor, gate and circuit levels. The mean square error estimating performance and stability metrics of SRAM cells is reduced by at least 1.5 and up to 7.5 while the yield estimation is improved by orders of magnitude. Low power design is a major constraint given the high-growing market of mobile devices that run on battery. It is also relevant because of the increased power densities of nowadays systems, in order to reduce the thermal dissipation and its impact on aging. The traditional approach of reducing the voltage to lower the energy consumption if challenging in the case of SRAMs given the increased impact of process variations at low voltage supplies. We propose a cell design that makes use of negative bit-line write-assist to overcome write failures as the main supply voltage is lowered. Despite using a second power source for the negative bit-line, the design achieves an energy reduction up to 20% compared to a conventional cell. A new metric, the hold trip point has been introduced to deal with new sources of failures to cells using a negative bit-line voltage, as well as an alternative method to estimate cell speed, requiring less simulations. With the continuous reduction of device sizes, new mechanisms need to be included to ease the fabrication process and to meet the performance targets of the successive nodes. As example we can consider the compressive or tensile strains included in FinFET technology, that alter the mobility of the transistors made out of the concerned fins. The effects of these mechanisms are very dependent on the layout, with transistor being affected by their neighbors, and different types of transistors being affected in a different way. We propose to use complementary SRAM cells with pMOS pass-gates in order to reduce the fin length of nMOS devices and achieve long uncut fins for the pMOS devices when the cell is included in its corresponding array. Once Shallow Trench isolation and SiGe stressors are considered the proposed design improves both kinds of transistor, boosting the performance of complementary SRAM cells by more than 10% for a same failure probability and static power consumption, with no area overhead. While radiation has been a traditional concern in space electronics, the small currents and voltages used in the latest nodes are making them more vulnerable to radiation-induced transient noise, even at ground level. Even if SOI or FinFET technologies reduce the amount of energy transferred from the striking particle to the circuit, the important process variation that the smallest nodes will present will affect their radiation hardening capabilities. We demonstrate that process variations can increase the radiation-induced error rate by up to 40% in the 7nm node compared to the nominal case. This increase is higher than the improvement achieved by radiation-hardened cells suggesting that the reduction of process variations would bring a higher improvement.

Transport interchange and local urban environment integration

Among the different interchange design aspects, integrated land use and infrastructure planning is maybe one of the most problematic fields in practice, given that a joint transport and urban planning spills over the regular scope of action of interchange developers, whereas it involves the cooperation and agreement of various authorities. Not only this, but the very issue of land use-transport integration seems to be a long-standing mantra in planning and transport research, lacking scientific evidence. This paper is an output of an ongoing European research project called ?NODES - New tOols for Design and OpEration of Urban Transport InterchangeS?. Its aim is to start re-focusing the academic-scientific evidence on the question and to foresee a specific and practical framework to approach the problem. The underlying hypothesis is that the interchange could be a catalyst of life and security in the city.

CompactRIO: advanced data acquisition systems integration in CODAC Core System

Las herramientas de configuración basadas en lenguajes de alto nivel como LabVIEW permiten el desarrollo de sistemas de adquisición de datos basados en hardware reconfigurable FPGA muy complejos en un breve periodo de tiempo. La estandarización del ciclo de diseño hardware/software y la utilización de herramientas como EPICS facilita su integración con la plataforma de adquisición y control ITER CODAC CORE SYSTEM (CCS) basada en Linux. En este proyecto se propondrá una metodología que simplificará el ciclo completo de integración de plataformas novedosas, como cRIO, en las que el funcionamiento del hardware de adquisición puede ser modificado por el usuario para que éste se amolde a sus requisitos específicos. El objetivo principal de este proyecto fin de master es realizar la integración de un sistema cRIO NI9159 y diferentes módulos de E/S analógica y digital en EPICS y en CODAC CORE SYSTEM (CCS). Este último consiste en un conjunto de herramientas software que simplifican la integración de los sistemas de instrumentación y control del experimento ITER. Para cumplir el objetivo se realizarán las siguientes tareas: • Desarrollo de un sistema de adquisición de datos basado en FPGA con la plataforma hardware CompactRIO. En esta tarea se realizará la configuración del sistema y la implementación en LabVIEW para FPGA del hardware necesario para comunicarse con los módulos: NI9205, NI9264, NI9401.NI9477, NI9426, NI9425 y NI9476 • Implementación de un driver software utilizando la metodología de AsynDriver para integración del cRIO con EPICS. Esta tarea requiere definir todos los records necesarios que exige EPICS y crear las interfaces adecuadas que permitirán comunicarse con el hardware. • Implementar la descripción del sistema cRIO y del driver EPICS en el sistema de descripción de plantas de ITER llamado SDD. Esto automatiza la creación de las aplicaciones de EPICS que se denominan IOCs. SUMMARY The configuration tools based in high-level programing languages like LabVIEW allows the development of high complex data acquisition systems based on reconfigurable hardware FPGA in a short time period. The standardization of the hardware/software design cycle and the use of tools like EPICS ease the integration with the data acquisition and control platform of ITER, the CODAC Core System based on Linux. In this project a methodology is proposed in order to simplify the full integration cycle of new platforms like CompactRIO (cRIO), in which the data acquisition functionality can be reconfigured by the user to fits its concrete requirements. The main objective of this MSc final project is to develop the integration of a cRIO NI-9159 and its different analog and digital Input/Output modules with EPICS in a CCS. The CCS consists of a set of software tools that simplifies the integration of instrumentation and control systems in the International Thermonuclear Reactor (ITER) experiment. To achieve such goal the following tasks are carried out: • Development of a DAQ system based on FPGA using the cRIO hardware platform. This task comprehends the configuration of the system and the implementation of the mandatory hardware to communicate to the I/O adapter modules NI9205, NI9264, NI9401, NI9477, NI9426, NI9425 y NI9476 using LabVIEW for FPGA. • Implementation of a software driver using the asynDriver methodology to integrate such cRIO system with EPICS. This task requires the definition of the necessary EPICS records and the creation of the appropriate interfaces that allow the communication with the hardware. • Develop the cRIO system’s description and the EPICS driver in the ITER plant description tool named SDD. This development will automate the creation of EPICS applications, called IOCs.

A temperature-based thermodynamically consistent integration scheme for discrete thermo-elastodynamics

The formulation of thermodynamically consistent (TC) time integration methods was introduced by a general procedure based on the GENERIC form of the evolution equations for thermo-mechanical problems. The use of the entropy was reported to be the best choice for the thermodynamical variable to easily provide TC integrators. Also the employment of the internal energy was proved to not involve excessive complications. However, attempts towards the use of the temperature in the design of GENERIC-based TC schemes have so far been unfruitful. This paper complements the said procedure to attain TC integrators by presenting a TC scheme based on the temperature as thermodynamical state variable. As a result, the problems which arise due to the use of the entropy are overcome, mainly the definition of boundary conditions. What is more, the newly proposed method exhibits the general enhanced numerical stability and robustness properties of the entropy formulation.

Design of a Semi-analytical Method to Describe Plasma-Wall Interactions

Electric probes are objects immersed in the plasma with sharp boundaries which collect of emit charged particles. Consequently, the nearby plasma evolves under abrupt imposed and/or naturally emerging conditions. There could be localized currents, different time scales for plasma species evolution, charge separation and absorbing-emitting walls. The traditional numerical schemes based on differences often transform these disparate boundary conditions into computational singularities. This is the case of models using advection-diffusion differential equations with source-sink terms (also called Fokker-Planck equations). These equations are used in both, fluid and kinetic descriptions, to obtain the distribution functions or the density for each plasma species close to the boundaries. We present a resolution method grounded on an integral advancing scheme by using approximate Green's functions, also called short-time propagators. All the integrals, as a path integration process, are numerically calculated, what states a robust grid-free computational integral method, which is unconditionally stable for any time step. Hence, the sharp boundary conditions, as the current emission from a wall, can be treated during the short-time regime providing solutions that works as if they were known for each time step analytically. The form of the propagator (typically a multivariate Gaussian) is not unique and it can be adjusted during the advancing scheme to preserve the conserved quantities of the problem. The effects of the electric or magnetic fields can be incorporated into the iterative algorithm. The method allows smooth transitions of the evolving solutions even when abrupt discontinuities are present. In this work it is proposed a procedure to incorporate, for the very first time, the boundary conditions in the numerical integral scheme. This numerical scheme is applied to model the plasma bulk interaction with a charge-emitting electrode, dealing with fluid diffusion equations combined with Poisson equation self-consistently. It has been checked the stability of this computational method under any number of iterations, even for advancing in time electrons and ions having different time scales. This work establishes the basis to deal in future work with problems related to plasma thrusters or emissive probes in electromagnetic fields.

Esquema de Referencia para Acoplamiento Débil entre Sistema Informático y Equipo de Producción

La meta de intercambiabilidad de piezas establecida en los sistemas de producción del siglo XIX, es ampliada en el último cuarto del siglo pasado para lograr la capacidad de fabricación de varios tipos de producto en un mismo sistema de manufactura, requerimiento impulsado por la incertidumbre del mercado. Esta incertidumbre conduce a plantear la flexibilidad como característica importante en el sistema de producción. La presente tesis se ubica en el problema de integración del sistema informático (SI) con el equipo de producción (EP) en la búsqueda de una solución que coadyuve a satisfacer los requerimientos de flexibilidad impuestas por las condiciones actuales de mercado. Se describen antecedentes de los sistemas de producción actuales y del concepto de flexibilidad. Se propone una clasificación compacta y práctica de los tipos de flexibilidad relevantes en el problema de integración SI-EP, con la finalidad de ubicar el significado de flexibilidad en el área de interés. Así mismo, las variables a manejar en la solución son clasificadas en cuatro tipos: Medio físico, lenguajes de programación y controlador, naturaleza del equipo y componentes de acoplamiento. Por otra parte, la característica de reusabilidad como un efecto importante y deseable de un sistema flexible, es planteada como meta en la solución propuesta no solo a nivel aplicación del sistema sino también a nivel de reuso de conceptos de diseño. Se propone un esquema de referencia en tres niveles de abstracción, que permita manejar y reutilizar en forma organizada el conocimiento del dominio de aplicación (integración SI-EP), el desarrollo de sistemas de aplicación genérica así como también la aplicación del mismo en un caso particular. Un análisis del concepto de acoplamiento débil (AD) es utilizado como base en la solución propuesta al problema de integración SI-EP. El desarrollo inicia identificando condiciones para la existencia del acoplamiento débil, compensadores para soportar la operación del sistema bajo AD y los efectos que ocasionan en el sistema informático los cambios en el conjunto de equipos de producción. Así mismo, se introducen como componentes principales del acoplamiento los componentes tecnológico, tarea y rol, a utilizar en el análisis de los requerimientos para el desarrollo de una solución de AD entre SI-EP. La estructura de tres niveles del esquema de referencia propuesto surge del análisis del significado de conceptos de referencia comúnmente reportados en la literatura, tales como arquitectura de referencia, modelo de referencia, marco de trabajo, entre otros. Se presenta un análisis de su significado como base para la definición de cada uno de los niveles de la estructura del esquema, pretendiendo con ello evitar la ambigüedad existente debido al uso indistinto de tales conceptos en la literatura revisada. Por otra parte, la relación entre niveles es definida tomando como base la estructura de cuatro capas planteada en el área de modelado de datos. La arquitectura de referencia, implementada en el primer nivel del esquema propuesto es utilizada como base para el desarrollo del modelo de referencia o marco de trabajo para el acoplamiento débil entre el SI y el EP. La solución propuesta es validada en la integración de un sistema informático de coordinación de flujo y procesamiento de pieza con un conjunto variable de equipos de diferentes tipos, naturaleza y fabricantes. En el ejercicio de validación se abordaron diferentes estándares y técnicas comúnmente empleadas como soporte al problema de integración a nivel componente tecnológico, tales como herramientas de cero configuración (ejemplo: plug and play), estándar OPC-UA, colas de mensajes y servicios web, permitiendo así ubicar el apoyo de estas técnicas en el ámbito del componente tecnológico y su relación con los otros componentes de acoplamiento: tarea y rol. ABSTRACT The interchangeability of parts, as a goal of manufacturing systems at the nineteenth century, is extended into the present to achieve the ability to manufacture various types of products in the same manufacturing system, requirement associated with market uncertainty. This uncertainty raises flexibility as an important feature in the production system. This thesis addresses the problem regarding integration of software system (SS) and the set of production equipment (PE); looking for a solution that contributes to satisfy the requirements of flexibility that the current market conditions impose on manufacturing, particularly to the production floor. Antecedents to actual production systems as well as the concept of flexibility are described and analyzed in detail. A practical and compact classification of flexibility types of relevance to the integration SS-EP problem is proposed with the aim to delimit the meaning of flexibility regarding the area of interest. Also, a classification for the variables involved in the integration problem is presented into four types: Physical media, programming and controller languages, equipment nature and coupling components. In addition, the characteristic of reusability that has been seen as an important and desirable effect of a flexible system is taken as a goal in the proposed solution, not only at system implementation level but also at system design level. In this direction, a reference scheme is proposed consisting of three abstraction levels to systematically support management and reuse of domain knowledge (SS-PE), development of a generic system as well as its application in a particular case. The concept of loose coupling is used as a basis in the development of the proposed solution to the problem of integration SS-EP. The first step of the development process consists of an analysis of the loose coupled concept, identifying conditions for its existence, compensators for system operation under loose coupling conditions as well as effects in the software system caused by modification in the set of production equipment. In addition coupling components: technological, task and role are introduced as main components to support the analysis of requirements regarding loose coupling of SS-PE. The three tier structure of the proposed reference scheme emerges from the analysis of reference concepts commonly reported in the literature, such as reference architecture, reference model and framework, among others. An analysis of these concepts is used as a basis for definition of the structure levels of the proposed scheme, trying to avoid the ambiguity due to the indiscriminate use of such concepts in the reviewed literature. In addition, the relation between adjacent levels of the structure is defined based on the four tiers structure commonly used in the data modelling area. The reference architecture is located as the first level in the structure of the proposed reference scheme and it is utilized as a basis for the development of the reference model or loose coupling framework for SS-PE integration. The proposed solution is validated by integrating a software system (process and piece flow coordination system) with a variable set of production equipment including different types, nature and manufacturers of equipment. Furthermore, in this validation exercise, different standards and techniques commonly used have been taken into account to support the issue of technology coupling component, such as tools for zero configuration (i.e. Plug and Play), message queues, OPC-UA standard, and web services. Through this part of the validation exercise, these integration tools are located as a part of the technological component and they are related to the role and task components of coupling.

Design, Technology and Characterization of Micromechanised Sensors and Actuators for Harsh Environments

Los sistemas micro electro mecánicos (MEMS) han demostrado ser una exitosa familia de dispositivos que pueden usarse como plataforma para el desarrollo de dispositivos con aplicaciones en óptica, comunicaciones, procesado de señal y sensorización. Los dispositivos MEMS estándar suelen estar fabricados usando tecnología de silicio. Sin embargo, el rendimiento de estos MEMS se puede mejorar si se usan otros materiales. Por ejemplo, el diamante nanocristalino (NCD) ofrece unas excelentes propiedades mecánicas, transparencia y una superficie fácil de funcionalizar. Por otro lado, el sistema de materiales (In; Ga; Al)N, los materiales IIIN, se pueden usar para producir estructuras monocristalinas con alta sensibilidad mecánica y química. Además, el AlN se puede depositar por pulverización catódica reactiva sobre varios substratos, incluyendo NCD, para formar capas policristalinas orientadas con alta respuesta piezoeléctrica. Adicionalmente, tanto el NCD como los materiales III-N muestran una gran estabilidad térmica y química, lo que los hace una elección idónea para desarrollar dispositivos para aplicaciones para alta temperatura, ambientes agresivos e incluso para aplicaciones biocompatibles. En esta tesis se han usado estos materiales para el diseño y medición de demostradores tecnológicos. Se han perseguido tres objetivos principales: _ Desarrollo de unos procesos de fabricación apropiados. _ Medición de las propiedades mecánicas de los materiales y de los factores que limitan el rendimiento de los dispositivos. _ Usar los datos medidos para desarrollar dispositivos demostradores complejos. En la primera parte de esta tesis se han estudiado varias técnicas de fabricación. La estabilidad de estos materiales impide el ataque y dificulta la producción de estructuras suspendidas. Los primeros capítulos de esta disertación se dedican al desarrollo de unos procesos de transferencia de patrones por ataque seco y a la optimización del ataque húmedo sacrificial de varios substratos propuestos. Los resultados de los procedimientos de ataque se presentan y se describe la optimización de las técnicas para la fabricación de estructuras suspendidas de NCD y materiales III-N. En un capítulo posterior se estudia el crecimiento de AlN por pulverización catódica. Como se ha calculado en esta disertación para obtener una actuación eficiente de MEMS, las capas de AlN han de ser finas, típicamente d < 200 nm, lo que supone serias dificultades para la obtención de capas orientadas con respuesta piezoeléctrica. Las condiciones de depósito se han mapeado para identificar las fronteras que proporcionan el crecimiento de material orientado desde los primeros pasos del proceso. Además, durante la optimización de los procesos de ataque se estudió un procedimiento para fabricar películas de GaN nanoporoso. Estas capas porosas pueden servir como capas sacrificiales para la fabricación de estructuras suspendidas de GaN con baja tensión residual o como capas para mejorar la funcionalización superficial de sensores químicos o biológicos. El proceso de inducción de poros se discutirá y también se presentarán experimentos de ataque y funcionalización. En segundo lugar, se han determinado las propiedades mecánicas del NCD y de los materiales III-N. Se han fabricado varias estructuras suspendidas para la medición del módulo de Young y de la tensión residual. Además, las estructuras de NCD se midieron en resonancia para calcular el rendimiento de los dispositivos en términos de frecuencia y factor de calidad. Se identificaron los factores intrínsecos y extrínsecos que limitan ambas figuras de mérito y se han desarrollado modelos para considerar estas imperfecciones en las etapas de diseño de los dispositivos. Por otra parte, los materiales III-N normalmente presentan grandes gradientes de deformación residual que causan la deformación de las estructuras al ser liberadas. Se han medido y modelado estos efectos para los tres materiales binarios del sistema para proporcionar puntos de interpolación que permitan predecir las características de las aleaciones del sistema III-N. Por último, los datos recabados se han usado para desarrollar modelos analíticos y numéricos para el diseño de varios dispositivos. Se han estudiado las propiedades de transducción y se proporcionan topologías optimizadas. En el último capítulo de esta disertación se presentan diseños optimizados de los siguientes dispositivos: _ Traviesas y voladizos de AlN=NCD con actuación piezoeléctrica aplicados a nanoconmutadores de RF para señales de alta potencia. _ Membranas circulares de AlN=NCD con actuación piezoeléctrica aplicadas a lentes sintonizables. _ Filtros ópticos Fabry-Pérot basados en cavidades aéreas y membranas de GaN actuadas electrostáticamente. En resumen, se han desarrollado unos nuevos procedimientos optimizados para la fabricación de estructuras de NCD y materiales III-N. Estas técnicas se han usado para producir estructuras que llevaron a la determinación de las principales propiedades mecánicas y de los parámetros de los dispositivos necesarios para el diseño de MEMS. Finalmente, los datos obtenidos se han usado para el diseño optimizado de varios dispositivos demostradores. ABSTRACT Micro Electro Mechanical Systems (MEMS) have proven to be a successful family of devices that can be used as a platform for the development of devices with applications in optics, communications, signal processing and sensorics. Standard MEMS devices are usually fabricated using silicon based materials. However, the performance of these MEMS can be improved if other material systems are used. For instance, nanocrystalline diamond (NCD) offers excellent mechanical properties, optical transparency and ease of surface functionalization. On the other hand, the (In; Ga; Al)N material system, the III-N materials, can be used to produce single crystal structures with high mechanical and chemical sensitivity. Also, AlN can be deposited by reactive sputtering on various substrates, including NCD, to form oriented polycrystalline layers with high piezoelectric response. In addition, both NCD and III-N materials exhibit high thermal and chemical stability, which makes these material the perfect choice for the development of devices for high temperatures, harsh environments and even biocompatible applications. In this thesis these materials have been used for the design and measurement of technological demonstrators. Three main objectives have been pursued: _ Development of suitable fabrication processes. _ Measurement of the material mechanical properties and device performance limiting factors. _ Use the gathered data to design complex demonstrator devices. In a first part of the thesis several fabrication processes have been addressed. The stability of these materials hinders the etching of the layers and hampers the production of free standing structures. The first chapters of this dissertation are devoted to the development of a dry patterning etching process and to sacrificial etching optimization of several proposed substrates. The results of the etching processes are presented and the optimization of the technique for the manufacturing of NCD and III-N free standing structures is described. In a later chapter, sputtering growth of thin AlN layers is studied. As calculated in this dissertation, for efficient MEMS piezoelectric actuation the AlN layers have to be very thin, typically d < 200 nm, which poses serious difficulties to the production of c-axis oriented material with piezoelectric response. The deposition conditions have been mapped in order to identify the boundaries that give rise to the growth of c-axis oriented material from the first deposition stages. Additionally, during the etching optimization a procedure for fabricating nanoporous GaN layers was also studied. Such porous layers can serve as a sacrificial layer for the release of low stressed GaN devices or as a functionalization enhancement layer for chemical and biological sensors. The pore induction process will be discussed and etching and functionalization trials are presented. Secondly, the mechanical properties of NCD and III-N materials have been determined. Several free standing structures were fabricated for the measurement of the material Young’s modulus and residual stress. In addition, NCD structures were measured under resonance in order to calculate the device performance in terms of frequency and quality factor. Intrinsic and extrinsic limiting factors for both figures were identified and models have been developed in order to take into account these imperfections in the device design stages. On the other hand, III-N materials usually present large strain gradients that lead to device deformation after release. These effects have been measured and modeled for the three binary materials of the system in order to provide the interpolation points for predicting the behavior of the III-N alloys. Finally, the gathered data has been used for developing analytic and numeric models for the design of various devices. The transduction properties are studied and optimized topologies are provided. Optimized design of the following devices is presented at the last chapter of this dissertation: _ AlN=NCD piezoelectrically actuated beams applied to RF nanoswitches for large power signals. _ AlN=NCD piezoelectrically actuated circular membranes applied to tunable lenses. _ GaN based air gap tunable optical Fabry-Pérot filters with electrostatic actuation. On the whole, new optimized fabrication processes has been developed for the fabrication of NCD and III-N MEMS structures. These processing techniques was used to produce structures that led to the determination of the main mechanical properties and device parameters needed for MEMS design. Lastly, the gathered data was used for the design of various optimized demonstrator devices.