977 resultados para Acyclic glycerol dialkyl glycerol tetraether flux


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KTP crystals have been grown below and above the ferroelectric transition temperature by flux method employing both spontaneous and top-seeded solution growth techniques. A slight morphological difference has been observed in these crystals when grown below and above the T-c. Ferroelectric domains are studied in these crystals by selective domain etching. It is seen that the ferroelectric domains in crystals grown spontaneously below T, show a complicated structure. A systematic investigation of the factors influencing domain structure has been carried out. Stress to some extent has been shown to affect the domain structure. Finally, a convenient way of converting the multidomain crystals into monodomain ones is described.

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A novel vinyl ether, 2,2-dimethyl-4-vinyioxymethyl-1,3-dioxol (DMVMD), that has a dimethyl ketal protected vicinal diol functionality was synthesizied from readily available starting materials, such as glycerol, acetone and acetylene. Copolymerisation of DMVMD with maleic anhydride (MAH) in various molar ratios was carried out using a free radical initiator. The composition of the copolymer was established by conductometric titration, and was found to be 1:1 irrespective of the monomer feed composition thus establishing its alternating nature. The copolymer formed clear free standing films upon solvent casting which became insoluble upon prolonged exposure to ambeint atmosphere. The insolubility is ascribed to moisture induced crosslinking. A plausible mechanism for the crosslinking involves the hydrolysis of some of the anhydride groups, followed by acid catalysed deketalization, and then by the reaction of the alcoholic groups, thus generated, with the residual anhydride to give ester crosslinks. This hypothesis was confirmed both by model reactions and insitu FT-IR studies.

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Starting from the time-dependent Ginzburg-Landau equations for a type II superconductor, we derive the equations of motion for the displacement field of a moving vortex lattice ignoring pinning and inertia. We show that it is linearly stable and, surprisingly, that it supports wavelike long-wavelength excitations arising not from inertia or elasticity but from the strain-dependent mobility of the moving lattice. It should be possible to image these waves, whose speeds are a few mu m/s, using fast scanning tunneling microscopy.

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A proper edge-coloring with the property that every cycle contains edges of at least three distinct colors is called an acyclic edge-coloring. The acyclic chromatic index of a graph G, denoted. chi'(alpha)(G), is the minimum k such that G admits an acyclic edge-coloring with k colors. We conjecture that if G is planar and Delta(G) is large enough, then chi'(alpha) (G) = Delta (G). We settle this conjecture for planar graphs with girth at least 5. We also show that chi'(alpha) (G) <= Delta (G) + 12 for all planar G, which improves a previous result by Fiedorowicz, Haluszczak, and Narayan Inform. Process. Lett., 108 (2008), pp. 412-417].

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To resolve many flow features accurately, like accurate capture of suction peak in subsonic flows and crisp shocks in flows with discontinuities, to minimise the loss in stagnation pressure in isentropic flows or even flow separation in viscous flows require an accurate and low dissipative numerical scheme. The first order kinetic flux vector splitting (KFVS) method has been found to be very robust but suffers from the problem of having much more numerical diffusion than required, resulting in inaccurate computation of the above flow features. However, numerical dissipation can be reduced by refining the grid or by using higher order kinetic schemes. In flows with strong shock waves, the higher order schemes require limiters, which reduce the local order of accuracy to first order, resulting in degradation of flow features in many cases. Further, these schemes require more points in the stencil and hence consume more computational time and memory. In this paper, we present a low dissipative modified KFVS (m-KFVS) method which leads to improved splitting of inviscid fluxes. The m-KFVS method captures the above flow features more accurately compared to first order KFVS and the results are comparable to second order accurate KFVS method, by still using the first order stencil. (C) 2011 Elsevier Ltd. All rights reserved.

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The Bénard–Marangoni convection is studied in a three-dimensional container with thermally insulated lateral walls and prescribed heat flux at lower boundary. The upper surface of the incompressible, viscous fluid is assumed to be flat with temperature dependent surface tension. A Galerkin–Tau method with odd and even trial functions satisfying all the essential boundary conditions except the natural boundary conditions at the free surface has been used to solve the problem. The critical Marangoni and Rayleigh numbers are determined for the onset of steady convection as a function of aspect ratios x0 and y0 for the cases of Bénard–Marangoni, pure Marangoni and pure Bénard convections. It is observed that critical parameters are decreasing with an increase in aspect ratios. The flow structures corresponding to the values of the critical parameters are presented in all the cases. It is observed that the critical parameters are higher for case with heat flux prescribed than those corresponding to the case with prescribed temperature. The critical Marangoni number for pure Marangoni convection is higher than critical Rayleigh number corresponding to pure Bénard convection for a given aspect ratio whereas the reverse was observed for two-dimensional infinite layer.

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The removal of native oxide from Si (1 1 1) surfaces was investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectra (SIMS) depth profiles. Two different oxide removal methods, performed under ultrahigh-vacuum (UHV) conditions, were carried out and compared. The first cleaning method is thermal desorption of oxide at 900 degrees C. The second method is the deposition of metallic gallium followed by redesorption. A significant decrease in oxygen was achieved by thermal desorption at 900 degrees C under UHV conditions. By applying a subsequent Ga deposition/redesorption, a further reduction in oxygen could be achieved. We examine the merits of an alternative oxide desorption method via conversion of the stable SiO(2) surface oxide into a volatile Ca(2)O oxide by a supply of Ga metals. Furthermore, ultra thin films of pure silicon nitride buffer layer were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma followed by GaN growth. The SIMS depth profile shows that the oxygen impurity can be reduced at GaN/beta-Si(3)N(4)/Si interfaces by applying a subsequent Ga deposition/redesorption. (C) 2011 Elsevier B.V. All rights reserved.

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Oligoarabinofuranoside-containing glycolipids relevant to mycobacterial cell wall components were synthesized in order to understand the functional roles of such glycolipids. A series of linear tetra-, hexa-, octa-and a branched heptasaccharide oligoarabinofuranosides, with 1 -> 2 and 1 -> 5 a-linkages between the furanoside residues, were synthesized by chemical methods from readily available monomer building blocks. Upon the synthesis of glycolipids, constituted with a double alkyl chain-substituted sn-glycerol core and oligosaccharide fragments, biological studies were performed to identify the effect of synthetic glycolipids on the biofilm formation and sliding motilities of Mycobacterium smegmatis. Synthetic glycolipids and arabinofuranosides displayed an inhibitory effect on the growth profile, but mostly on the biofilm formation and maturation. Similarly, synthetic compounds also influenced the sliding motility of the bacteria. Further, biophysical studies were undertaken, so as to identify the interactions of the glycolipids with a pulmonary surfactant protein, namely surfactant protein A (SP-A), with the aid of the surface plasmon resonance technique. Specificities of each glycolipid interacting with SP-A were thus evaluated. From this study, glycolipids were found to exhibit higher apparent association constants than the corresponding oligosaccharide portion alone, without the double alkyl group-substituted glycerol core.

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Tapioca starch in both glycerol-plasticized and in unplasticized states was blended with high-density polyethylene (HDPE) using HDPE-g-maleic anhydride as the compatibilizer. The impact and tensile properties of the blends were measured according to ASTM methods. The results reveal that blends containing plasticized starch have better mechanical properties than those containing unplasticized starch. High values of elongation at break at par with those of virgin HDPE could be obtained for blends, even with high loading of plasticized starch. Morphological studies by SEM microscopy of impact-fractured specimens of such blends revealed a ductile fracture, unlike blends with unplasticized starch at such high loadings, which showed brittle fracture, even with the addition of compatibilizer. In general, blends of HDPE and plasticized starch with added compatibilizer show better mechanical properties than similar blends containing unplasticized starch. (C) 2001 John Wiley & Sons, Inc.

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Validation of the flux partitioning of species model has been illustrated. Various combinations of inequality expression for the fluxes of species A and B in two successively grown hypothetical intermetallic phases in the interdiffusion zone have been considered within the constraints of this concept. Furthermore, ratio of intrinsic diffusivities of the species A and B in those two phases has been correlated in four different cases. Moreover, complete and or partial validation or invalidation of this model with respect to both the species, has been proven theoretically and also discussed with the Co-Si system as an example.

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GaN films were grown on c-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE). The effect of N/Ga flux ratio on structural, morphological, and optical properties was studied. The dislocation density found to increase with increasing the N/Ga ratio. The surface morphology of the films as seen by scanning electron microscopy shows pits on the surface and found that the pit density on the surface increases with N/Ga ratio. The room temperature photoluminescence study reveals the shift in band-edge emission toward the lower energy with increase in N/Ga ratio. This is believed to arise from the reduction in compressive stress in the films as is evidenced by room temperature Raman study. The transport studied on the Pt/GaN Schottky diodes showed a significant increase in leakage current with an increase in N/Ga ratio and was found to be caused by the increase in pit density as well as increase in dislocation density in the GaN films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3634116]

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Problems related to network coding for acyclic, instantaneous networks (where the edges of the acyclic graph representing the network are assumed to have zero-delay) have been extensively dealt with in the recent past. The most prominent of these problems include (a) the existence of network codes that achieve maximum rate of transmission, (b) efficient network code constructions, and (c) field size issues. In practice, however, networks have transmission delays. In network coding theory, such networks with transmission delays are generally abstracted by assuming that their edges have integer delays. Using enough memory at the nodes of an acyclic network with integer delays can effectively simulate instantaneous behavior, which is probably why only acyclic instantaneous networks have been primarily focused on thus far. However, nulling the effect of the network delays are not always uniformly advantageous, as we will show in this work. Essentially, we elaborate on issues ((a), (b) and (c) above) related to network coding for acyclic networks with integer delays, and show that using the delay network as is (without adding memory) turns out to be advantageous, disadvantageous or immaterial, depending on the topology of the network and the problem considered i.e., (a), (b) or (c).

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We have studied the isothermal, magnetic field (H‖c) dependent rf power P(H) dissipation (Hrf‖a) in the superconducting state of Bi2Sr2CaCu2O8 single crystals prior to and after irradiation with 250 MeV 107Ag17+ ions. In the pristine state, P(H) shows an initial decrease with increase in field, reaches a minimum at HM(T) and increases monotonically for H>HM(T). This behavior arises when the electromagnetic coupling between the pancake vortices in adjacent CuO layers becomes dominant on increasing the field and minimizes the distortions of the flux lines by confining the 2D vortices. In the post irradiated state, such an initial decrease and the minimum in P(H) is not observed but only a much reduced rf dissipation that monotonically increases with field from H = 0 onwards is seen. We attribute this difference to the strong enhancement of the tilt modulus C44 of the flux lines on irradiation when the pancake vortices in adjacent CuO bilayers are pinned along the track forming a well-stacked flux line in the field direction (‖c). We have also observed that the rf dissipation disappears at a certain temperature Tsf, at which the normal core of the flux line becomes commensurate with the columnar track diameter.

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In the present work, we report the growth of wurtzite InN epilayers on GaN/Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE). The growth parameters such as indium flux, substrate temperature and RF power affect the crystallographic and morphological properties of InN layers, which were evaluated using high resolution X-ray diffraction (HRXRD) analysis and atomic force microscopy (AFM). It is found that excess indium (In) concentrations and surface roughness were increased with increase in In flux and growth temperature. The intensity of HRXRD (0 0 0 2) peak, corresponding to c-axis orientation has been increased and full width at half maxima (FWHM) has decreased with increase in RF power. It was found that highly c-axis oriented InN epilayers can be grown at 450 degrees C growth temperature, 450 W RF power and 1.30 x 10(-7) mbar In beam equivalent pressure (BEP). The energy gap of InN layers grown by optimizing growth conditions was determined by photoluminescence and optical absorption measurement. (C) 2011 Elsevier B.V. All rights reserved.