Estudo do comportamento de variáveis cinemáticas na produção difrativa de mésons D-+* em colisões próton-próton √s = 7TeV

Apresentamos um estudo preliminar da produção difrativa de mésons utilizando dados obtidos da colisão próton-próton, a energias de centro de massa de 7 TeV, com o experimento CMS-LHC. O trabalho inclui o desenvolvimento do algoritmo de reconstrução dos mésons D* através do canal de decaimento D*->D0 + pion (lento) ->K+pion, a medida da eficiência de detecção e reconstrução, e uma análise do comportamento de variáveis cinemáticas na produção difrativa dessas partículas, particularmente, das lacunas de rapidez. Para isso, foi utilizada uma luminosidade integrada de 3,171pb^(-1) de dados coletados no ano de 2010. As análises com os dados experimentais foram comparadas com os resultados obtidos com geradores de Monte Carlo PYTHIA6, PYTHIA8 e POMPYT.

Spectroscopic and fluorescence decay behaviors of Yb3+ -doped SiO2-PbO-Na2O-K2O glass

The spectroscopic and fluorescent decay behaviors of Yb3+-doped SiO2-PbO-Na2O-K2O glass is reported in this work. Yb2O3 contents of 1, 1.5 and 2mol% are added into the glass. Through the measurement of absorption and fluorescence spectra, and fluorescent decay rate at room temperature and at low temperature (18 K), it is found that the nonradiative decay rate of Yb3+ ions is mainly determined by the interaction between residual hydroxyl groups and Yb3+ ions. Concentration quenching effect can be omitted in this glass up to the Yb3+ ion concentration of 8.98 x 10(20)/cm(3). Multiphonon decay rate is also very small because of the large energy gap between F-2(5/2) and F-2(7/2) levels of Yb3+ ions. (c) 2004 Elsevier B.V. All rights reserved.

Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.

We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.

Long-range interactions in turbulence and the energy decay problem.

We discuss the long-range interactions that arise in homogeneous turbulence as a consequence of the Biot-Savart law. We note that, somewhat surprisingly, these long-range correlations are very weak in decaying, isotropic turbulence, and we argue that this should also be true for magnetohydrodynamic, rotating and stratified turbulence. If this is indeed the case, it is possible to make explicit predictions for the rate of decay of energy in these anisotropic systems, and it turns out that these predictions are consistent with the available numerical and experimental evidence.