Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps

A critical element for the successful growth of GaN device layers on Si is accurate control of the AlGaN buffer layers used to manage strain. Here we present a method for measuring the composition of the AlGaN buffer layers in device structures which makes use of a one-dimensional x-ray detector to provide efficient measurement of a reciprocal space map which covers the full compositional range from AlN to GaN. Combining this with a suitable x-ray reflection with low strain sensitivity it is possible to accurately determine the Al fraction of the buffer layers independent of their relaxation state. © 2013 IOP Publishing Ltd.

Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H-2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees C for 30 s in N-2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H-2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H-2 in N-2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N-2 to 10% H-2 in N-2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N-2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H-2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.

A 5.6-mW Power Dissipation CMOS Frequency Synthesizer for L1/L2 Dual-Band GPS Application

This paper presents a wide tuning range CMOS frequency synthesizer for dual-band GPS receiver, which has been fabricated in a standard 0.18-um RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45GHz and 3.14GHz in case of process corner or temperature variation, with a current consumption varying accordingly from 0.8mA to 0.4mA, from a 1.8V supply voltage. The measurement results show that the whole frequency synthesizer costs a very low power consumption of 5.6mW working at L I band with in-band phase noise less than -82dBc/Hz and out-of-band phase noise about -112 dBc/Hz at 1MHz offset from a 3.142GHz carrier.

20—50 MeV O~(5+)离子引起Au的L壳层X射线产生截面研究

在北京13 MV串列加速器上利用20—50MeVO5+离子研究Au的L壳层X射线产生截面.实验结果表明σ(Ll)/σ(Lα),σ(Lβ)/σ(Lα)和σ(Lγ)/σ(Lα)与ECPSSR理论计算结果符合比较好.在实验中由于较高的能量,在能量点存在能移现象.

不同土壤水分条件对长白山阔叶红松林5种树种的生理生态特性的影响(英文)

水分亏缺影响植物的整个生长过程,不论是外部形态还是内部结构以及各种代谢过程均受到影响。不同植物对其不同程度水分亏缺的响应是不同的,这主要是由于不同植物在不同水分条件下碳同化与水分利用机制间存在差异的结果。本研究以组成长白山阔叶红松林主要树种红松、水曲柳、胡桃楸、椴树和蒙古柞的幼苗为研究对象,盆栽于模拟干旱条件下,其土壤含水量分别为田间持水量(37.2%)的85%~100%(CK)、65%~85%、(MW)和45%~65%(LW)。讨论了不同模拟干旱强度对树木耐旱特征、净光合速率、蒸腾速率和水分利用率等参数的影响。结果表明,所有供试树种经模拟干旱处理后叶片耐旱特征增加:叶片厚度、自由水含量和肉质度增加,比叶面积减小。不同树种的光合速率对不同土壤水分条件反映趋势基本相似,除水曲柳在轻度土壤水分亏缺下光合速率和水分利用率比对照组有所提高外,其它4个树种光合速率和水分利用率均下降,但蒸腾速率对土壤水分含量反应不一,反映出幼树对对土壤水分含量适应的复杂性。表3参15。

细辛精油对5种木本花卉病害的离体抑菌效果比较

采用生长速率法和孢子萌发法测定了细辛精油对引起木本花卉叶部病害的5种病原菌(牡丹炭疽病、牡丹拟盘多毛孢叶斑病、月季黑斑病、肉桂链格孢叶斑病和龙血树镰孢叶斑病)的菌丝生长和孢子萌发的抑制作用。结果表明:细辛精油对牡丹拟盘多毛孢叶斑病菌菌丝生长和孢子萌发的抑制效果均为最好,EC50分别为120.43 mg/L和110.66 mg/L;对于同一种病原菌来说,细辛精油对牡丹炭疽病菌和肉桂链格孢叶斑病菌菌丝生长的抑制作用强于对其孢子萌发的抑制作用,对牡丹拟盘多毛孢叶斑病菌和龙血树镰孢叶斑病菌孢子萌发的抑制作用强于对其菌丝生长的抑制作用。

多晶富镉Hg_(1-x)Cd_xTe的电沉积及Hg_(0.09)Cd_(0.91)Te薄膜的光电化学行为

本文研究了在酸性CdSO_4+HTeO_2~+6HgCl_2 电解液中多晶富镉Hg_(1-x),Cd_(?),Te(x>0.5)的电沉积过程,实现了三种离子在同一电位下共沉积的技术。对在钛基底上沉积出的薄膜进行XRD,SEM和EDAX分析,结果表明薄膜为闪锌矿型的多晶结构,分布均匀连续。考察了(1—x)=0.09时多晶薄膜在多硫氧化还原电对液中的光电化学行为,光强为100mW/cm~2时,短路光电流I_(sc)=1.88mA/cm~2,开路光电压V_(oc)=0.25V,填充因子F·F=0.22。由光电化学光谱所确定出的禁带宽度E_g=1.26eV,Mott-schottky曲线给出了电极的平带电位φfb为—1.26V(vs.SCE),从而得到开路光电压V_(oc)可能达到的最大值为0.49V。因此,多晶富镉Hg_(1-x)Cd_xTe薄膜是一种很有潜力的光活性电极材料。