Improving the health and well-being of women at risk for neural tube defect recurrence

There is growing interest in providing women with internatal care, a package of healthcare and ancillary services that can improve their health during the period after the termination of one pregnancy but before the conception of the next pregnancy. Women who have had a pregnancy affected by a neural tube defect can especially benefit from internatal care because they are at increased risk for recurrence and improvements to their health during the inter-pregnancy period can prevent future negative birth outcomes. The dissertation provides three papers that inform the content of internatal care for women at risk for recurrence by examining descriptive epidemiology to develop an accurate risk profile of the population, assessing whether women at risk for recurrence would benefit from a psychosocial intervention, and determining how to improve health promotion efforts targeting folic acid use.^ Paper one identifies information relevant for developing risk profiles and conducting risk assessments. A number of investigations have found that the risk for neural tube defects differs between non-Hispanic Whites and Hispanics. To understand the risk difference, the descriptive epidemiology of spina bifida and anencephaly was examined for Hispanics and non-Hispanic Whites based on data from the Texas Birth Defects Registry for the years 1999 through 2004. Crude and adjusted birth prevalence ratios and corresponding 95% confidence intervals were calculated between descriptive epidemiologic characteristics and anencephaly and spina bifida for non-Hispanic Whites and for Hispanics. In both race/ethnic groups, anencephaly expressed an inverse relationship with maternal age and a positive linear relationship with parity. Both relationships were stronger in non-Hispanic Whites. Female infants had a higher risk for anencephaly in non-Hispanic Whites. Lower maternal education was associated with increased risk for spina bifida in Hispanics.^ Paper two assesses the need for a psychosocial intervention. For mothers who have children with spina bifida, the transition to motherhood can be stressful. This qualitative study explored the process of becoming a mother to a child with spina bifida focusing particularly on stress and coping in the immediate postnatal environment. Semi-structured interviews were conducted with six mothers who have children with spina bifida. Mothers were asked about their initial emotional and problem-based coping efforts, the quality and kind of support provided by health providers, and the characteristics of their meaning-based coping efforts; questions matched Transactional Model of Stress and Coping (TMSC) constructs. Analysis of the responses revealed a number of modifiable stress and coping transactions, the most salient being: health providers are in a position to address beliefs about self-causality and prevent mothers from experiencing the repercussions that stem from maintaining these beliefs. ^ Paper three identifies considerations when creating health promotion materials targeting folic acid use. A brochure was designed using concepts from the Precaution Adoption Process Model (PAPM). Three focus groups comprising 26 mothers of children with spina bifida evaluated the brochure. One focus group was conducted in Spanish-only, the other two focus groups were conducted in English and Spanish combined. Qualitative analysis of coded transcripts revealed that a brochure is a helpful adjunct. Questions about folic acid support the inclusion of an insert with basic information. There may be a need to develop different educational material for Hispanics so the importance of folic acid is provided in a situational context. Some participants blamed themselves for their pregnancy outcome which may affect their receptivity to messages in the brochure. The women's desire for photographs that affect their perception of threat and their identification with the second role model indicate they belong to PAPM Stage 2 and 3. Participants preferred colorful envelopes, high quality paper, intimidating photographs, simple words, conversational style sentences, and positive messages.^ These papers develop the content of risk assessment, psychosocial intervention, and health promotion components of internatal care as they apply to women at risk for recurrence. The findings provided evidence for considering parity and maternal age when assessing nutritional risk. The two dissimilarities between the two race/ethnic groups, infant sex and maternal education lent support to creating separate risk profiles. Interviews with mothers of children with spina bifida revealed the existence of unmet needs-suggesting that a psychosocial intervention provided as part of internatal care can strengthen and support women's well-being. Segmenting the audience according to race/ethnicity and PAPM stage can improve the relevance of print materials promoting folic acid use.^

InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy

This work reports on the growth by molecular beam epitaxy and characterization of InN/InGaN multiple quantum wells (MQWs) emitting at 1.5 μm. X-ray diffraction (XRD) spectra show satellite peaks up to the second order. Estimated values of well (3 nm) and barrier (9 nm) thicknesses were derived from transmission electron microscopy and the fit between experimental data and simulated XRD spectra. Transmission electron microscopy and XRD simulations also confirmed that the InGaN barriers are relaxed with respect to the GaN template, while the InN MQWs grew under biaxial compression on the InGaN barriers. Low temperature (14 K) photoluminescence measurements reveal an emission from the InN MQWs at 1.5 μm. Measurements as a function of temperature indicate the existence of localized states, probably due to InN quantum wells’ thickness fluctuations as observed by transmission electron microscopy.

Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots

Diluted nitride self-assembled In(Ga)AsN quantum dots (QDs) grown on GaAs substrates are potential candidates to emit in the windows of maximum transmittance for optical fibres (1.3-1.55 μm). In this paper, we analyse the effect of nitrogen addition on the indium desorption occurring during the capping process of InxGa1−xAs QDs (x = l and 0.7). The samples have been grown by molecular beam epitaxy and studied through transmission electron microscopy (TEM) and photoluminescence techniques. The composition distribution inside the dots was determined by statistical moiré analysis and measured by energy dispersive X-ray spectroscopy. First, the addition of nitrogen in In(Ga)As QDs gave rise to a strong redshift in the emission peak, together with a large loss of intensity and monochromaticity. Moreover, these samples showed changes in the QDs morphology as well as an increase in the density of defects. The statistical compositional analysis displayed a normal distribution in InAs QDs with an average In content of 0.7. Nevertheless, the addition of Ga and/or N leads to a bimodal distribution of the Indium content with two separated QD populations. We suggest that the nitrogen incorporation enhances the indium fixation inside the QDs where the indium/gallium ratio plays an important role in this process. The strong redshift observed in the PL should be explained not only by the N incorporation but also by the higher In content inside the QDs

Particle and energy transport in quantum disordered and quasi-periodic chains connected to mesoscopic Fermi reservoirs

We study a model of nonequilibrium quantum transport of particles and energy in a many-body system connected to mesoscopic Fermi reservoirs (the so-called meso-reservoirs). We discuss the conservation laws of particles and energy within our setup as well as the transport properties of quasi-periodic and disordered chains.

Understanding the operation of quantum dot intermediate band solar cells

In this paper, a model for intermediate band solar cells is built based on the generally understood physical concepts ruling semiconductor device operation, with special emphasis on the behavior at low temperature. The model is compared to JL-VOC measurements at concentrations up to about 1000 suns and at temperatures down to 20 K, as well as measurements of the radiative recombination obtained from electroluminescence. The agreement is reasonable. It is found that the main reason for the reduction of open circuit voltage is an operational reduction of the bandgap, but this effect disappears at high concentrations or at low temperatures.

The influence of quantum dot size on the sub-bandgap intraband photocurrent in intermediate band solar cells

The effect of quantum dot (QD) size on the performance of quantum dot intermediate band solar cells is investigated. A numerical model is used to calculate the bound state energy levels and the absorption coefficient of transitions from the ground state to all other states in the conduction band. Comparing with the current state of the art, strong absorption enhancements are found for smaller quantum dots, as well as a better positioning of the energy levels, which is expected to reduce thermal carrier escape. It is concluded that reducing the quantum dot size can increase sub-bandgap photocurrent and improve voltage preservation.

Assessing the dynamic behavior of wsn motes and rfid semi-passive tags for temperature monitoring.

A notorious advantage of wireless transmission is a significant reduction and simplification in wiring and harness. There are a lot of applications of wireless systems, but in many occasions sensor nodes require a specific housing to protect the electronics from hush environmental conditions. Nowadays the information is scarce and nonspecific on the dynamic behaviour of WSN and RFID. Therefore the purpose of this study is to evaluate the dynamic behaviour of the sensors. A series of trials were designed and performed covering temperature steps between cold room (5 °C), room temperature (23 °C) and heated environment (35 °C). As sensor nodes: three Crossbow motes, a surface mounted Nlaza module (with sensor Sensirion located on the motherboard), an aerial mounted Nlaza where the Sensirion sensor stayed at the end of a cable), and four tags RFID Turbo Tag (T700 model with and without housing), and 702-B (with and without housing). To assess the dynamic behaviour a first order response approach is used and fitted with dedicated optimization tools programmed in Matlab that allow extracting the time response (?) and corresponding determination coefficient (r2) with regard to experimental data. The shorter response time (20.9 s) is found for the uncoated T 700 tag which encapsulated version provides a significantly higher response (107.2 s). The highest ? corresponds to the Crossbow modules (144.4 s), followed by the surface mounted Nlaza module (288.1 s), while the module with aerial mounted sensor gives a response certainly close above to the T700 without coating (42.8 s). As a conclusion, the dynamic response of temperature sensors within wireless and RFID nodes is dramatically influenced by the way they are housed (to protect them from the environment) as well as by the heat released by the node electronics itself; its characterization is basic to allow monitoring of high rate temperature changes and to certify the cold chain. Besides the time to rise and to recover is significantly different being mostly higher for the latter than for the former.

Effect of Sb incorporation on the electronic structure of InAs quantum dots

On the basis of optical characterization experiments and an eight band kp model, we have studied the effect of Sb incorporation on the electronic structure of InAs quantum dots (QDs). We have found that Sb incorporation in InAs QDs shifts the hole wave function to the center of the QD from the edges of the QD where it is otherwise pinned down by the effects of shear stress. The observed changes in the ground-state energy cannot merely be explained by a composition change upon Sb exposure but can be accounted for when the change in lateral size is taken into consideration. The Sb distribution inside the QDs produces distinctive changes in the density of states, particularly, in the separation between excitation shells. We find a 50% increase in the thermal escape activation energy compared with reference InAs quantum dots as well as an increment of the fundamental transition decay time with Sb incorporation. Furthermore, we find that Sb incorporation into quantum dots is strongly nonlinear with coverage, saturating at low doses. This suggests the existence of a solubility limit of the Sb incorporation into the quantum dots during growth.

Virtual-bound, filamentary and layered states in a box-shaped quantum dot of square potential form the exact numerical solution of the effective mass Schrodinger equation

The effective mass Schrodinger equation of a QD of parallelepipedic shape with a square potential well is solved by diagonalizing the exact Hamiltonian matrix developed in a basis of separation-of-variables wavefunctions. The expected below bandgap bound states are found not to differ very much from the former approximate calculations. In addition, the presence of bound states within the conduction band is confirmed. Furthermore, filamentary states bounded in two dimensions and extended in one dimension and layered states with only one dimension bounded, all within the conduction band which are similar to those originated in quantum wires and quantum wells coexist with the ordinary continuum spectrum of plane waves. All these subtleties are absent in spherically shaped quantum dots, often used for modeling.

A Semi-Lagrangian Particle Level Set Finite Element Method for Interface Problems

We present a quasi-monotone semi-Lagrangian particle level set (QMSL-PLS) method for moving interfaces. The QMSL method is a blend of first order monotone and second order semi-Lagrangian methods. The QMSL-PLS method is easy to implement, efficient, and well adapted for unstructured, either simplicial or hexahedral, meshes. We prove that it is unconditionally stable in the maximum discrete norm, � · �h,∞, and the error analysis shows that when the level set solution u(t) is in the Sobolev space Wr+1,∞(D), r ≥ 0, the convergence in the maximum norm is of the form (KT/Δt)min(1,Δt � v �h,∞ /h)((1 − α)hp + hq), p = min(2, r + 1), and q = min(3, r + 1),where v is a velocity. This means that at high CFL numbers, that is, when Δt > h, the error is O( (1−α)hp+hq) Δt ), whereas at CFL numbers less than 1, the error is O((1 − α)hp−1 + hq−1)). We have tested our method with satisfactory results in benchmark problems such as the Zalesak’s slotted disk, the single vortex flow, and the rising bubble.

Effect of conservation tillage on soil physical properties, in-situ rainwater harvesting, and erosion control in arid and semi-arid regions

La escasez del agua en las regiones áridas y semiáridas se debe a la escasez de precipitaciones y la distribución desigual en toda la temporada, lo que hace de la agricultura de secano una empresa precaria. Un enfoque para mejorar y estabilizar el agua disponible para la producción de cultivos en estas regiones es el uso de tecnologías de captación de agua de lluvia in situ y su conservación. La adopción de los sistemas de conservación de la humedad del suelo in situ, tales como la labranza de conservación, es una de las estrategias para mejorar la gestión de la agricultura en zonas áridas y semiáridas. El objetivo general de esta tesis ha sido desarrollar una metodología de aplicación de labranza de depósito e investigar los efectos a corto plazo sobre las propiedades físicas del suelo de las diferentes prácticas de cultivo que incluyen labranza de depósito: (reservoir tillage, RT), la laboreo mínimo: (minimum tillage, MT), la no laboreo: (zero tillage, ZT) y laboreo convencional: (conventional tillage, CT) Así como, la retención de agua del suelo y el control de la erosión del suelo en las zonas áridas y semiáridas. Como una primera aproximación, se ha realizado una revisión profunda del estado de la técnica, después de la cual, se encontró que la labranza de depósito es un sistema eficaz de cosecha del agua de lluvia y conservación del suelo, pero que no ha sido evaluada científicamente tanto como otros sistemas de labranza. Los trabajos experimentales cubrieron tres condiciones diferentes: experimentos en laboratorio, experimentos de campo en una región árida, y experimentos de campo en una región semiárida. Para investigar y cuantificar el almacenamiento de agua a temperatura ambiente y la forma en que podría adaptarse para mejorar la infiltración del agua de lluvia recolectada y reducir la erosión del suelo, se ha desarrollado un simulador de lluvia a escala de laboratorio. Las características de las lluvias, entre ellas la intensidad de las precipitaciones, la uniformidad espacial y tamaño de la gota de lluvia, confirmaron que las condiciones naturales de precipitación son simuladas con suficiente precisión. El simulador fue controlado automáticamente mediante una válvula de solenoide y tres boquillas de presión que se usaron para rociar agua correspondiente a diferentes intensidades de lluvia. Con el fin de evaluar el método de RT bajo diferentes pendientes de superficie, se utilizaron diferentes dispositivos de pala de suelo para sacar un volumen idéntico para hacer depresiones. Estas depresiones se compararon con una superficie de suelo control sin depresión, y los resultados mostraron que la RT fue capaz de reducir la erosión del suelo y la escorrentía superficial y aumentar significativamente la infiltración. Luego, basándonos en estos resultados, y después de identificar la forma adecuada de las depresiones, se ha diseñado una herramienta combinada (sistema integrado de labranza de depósito (RT)) compuesto por un arado de una sola línea de chisel, una sola línea de grada en diente de pico, sembradora modificada, y rodillo de púas. El equipo fue construido y se utiliza para comparación con MT y CT en un ambiente árido en Egipto. El estudio se realizó para evaluar el impacto de diferentes prácticas de labranza y sus parámetros de funcionamiento a diferentes profundidades de labranza y con distintas velocidades de avance sobre las propiedades físicas del suelo, así como, la pérdida de suelo, régimen de humedad, la eficiencia de recolección de agua, y la productividad de trigo de invierno. Los resultados indicaron que la RT aumentó drásticamente la infiltración, produciendo una tasa que era 47.51% más alta que MT y 64.56% mayor que la CT. Además, los resultados mostraron que los valores más bajos de la escorrentía y pérdidas de suelos 4.91 mm y 0.65 t ha-1, respectivamente, se registraron en la RT, mientras que los valores más altos, 11.36 mm y 1.66 t ha-1, respectivamente, se produjeron en el marco del CT. Además, otros dos experimentos de campo se llevaron a cabo en ambiente semiárido en Madrid con la cebada y el maíz como los principales cultivos. También ha sido estudiado el potencial de la tecnología inalámbrica de sensores para monitorizar el potencial de agua del suelo. Para el experimento en el que se cultivaba la cebada en secano, se realizaron dos prácticas de labranza (RT y MT). Los resultados mostraron que el potencial del agua del suelo aumentó de forma constante y fue consistentemente mayor en MT. Además, con independencia de todo el período de observación, RT redujo el potencial hídrico del suelo en un 43.6, 5.7 y 82.3% respectivamente en comparación con el MT a profundidades de suelo (10, 20 y 30 cm, respectivamente). También se observaron diferencias claras en los componentes del rendimiento de los cultivos y de rendimiento entre los dos sistemas de labranza, el rendimiento de grano (hasta 14%) y la producción de biomasa (hasta 8.8%) se incrementaron en RT. En el experimento donde se cultivó el maíz en regadío, se realizaron cuatro prácticas de labranza (RT, MT, ZT y CT). Los resultados revelaron que ZT y RT tenían el potencial de agua y temperatura del suelo más bajas. En comparación con el tratamiento con CT, ZT y RT disminuyó el potencial hídrico del suelo en un 72 y 23%, respectivamente, a la profundidad del suelo de 40 cm, y provocó la disminución de la temperatura del suelo en 1.1 y un 0.8 0C respectivamente, en la profundidad del suelo de 5 cm y, por otro lado, el ZT tenía la densidad aparente del suelo y resistencia a la penetración más altas, la cual retrasó el crecimiento del maíz y disminuyó el rendimiento de grano que fue del 15.4% menor que el tratamiento con CT. RT aumenta el rendimiento de grano de maíz cerca de 12.8% en comparación con la ZT. Por otra parte, no hubo diferencias significativas entre (RT, MT y CT) sobre el rendimiento del maíz. En resumen, según los resultados de estos experimentos, se puede decir que mediante el uso de la labranza de depósito, consistente en realizar depresiones después de la siembra, las superficies internas de estas depresiones se consolidan de tal manera que el agua se mantiene para filtrarse en el suelo y por lo tanto dan tiempo para aportar humedad a la zona de enraizamiento de las plantas durante un período prolongado de tiempo. La labranza del depósito podría ser utilizada como un método alternativo en regiones áridas y semiáridas dado que retiene la humedad in situ, a través de estructuras que reducen la escorrentía y por lo tanto puede resultar en la mejora de rendimiento de los cultivos. ABSTRACT Water shortage in arid and semi-arid regions stems from low rainfall and uneven distribution throughout the season, which makes rainfed agriculture a precarious enterprise. One approach to enhance and stabilize the water available for crop production in these regions is to use in-situ rainwater harvesting and conservation technologies. Adoption of in-situ soil moisture conservation systems, such as conservation tillage, is one of the strategies for upgrading agriculture management in arid and semi-arid environments. The general aim of this thesis is to develop a methodology to apply reservoir tillage to investigate the short-term effects of different tillage practices including reservoir tillage (RT), minimum tillage (MT), zero tillage (ZT), and conventional tillage (CT) on soil physical properties, as well as, soil water retention, and soil erosion control in arid and semi-arid areas. As a first approach, a review of the state of the art has been done. We found that reservoir tillage is an effective system of harvesting rainwater and conserving soil, but it has not been scientifically evaluated like other tillage systems. Experimental works covered three different conditions: laboratory experiments, field experiments in an arid region, and field experiments in a semi-arid region. To investigate and quantify water storage from RT and how it could be adapted to improve infiltration of harvested rainwater and reduce soil erosion, a laboratory-scale rainfall simulator was developed. Rainfall characteristics, including rainfall intensity, spatial uniformity and raindrop size, confirm that natural rainfall conditions are simulated with sufficient accuracy. The simulator was auto-controlled by a solenoid valve and three pressure nozzles were used to spray water corresponding to different rainfall intensities. In order to assess the RT method under different surface slopes, different soil scooping devices with identical volume were used to create depressions. The performance of the soil with these depressions was compared to a control soil surface (with no depression). Results show that RT was able to reduce soil erosion and surface runoff and significantly increase infiltration. Then, based on these results and after selecting the proper shape of depressions, a combination implement integrated reservoir tillage system (integrated RT) comprised of a single-row chisel plow, single-row spike tooth harrow, modified seeder, and spiked roller was developed and used to compared to MT and CT in an arid environment in Egypt. The field experiments were conducted to evaluate the impact of different tillage practices and their operating parameters at different tillage depths and different forward speeds on the soil physical properties, as well as on runoff, soil losses, moisture regime, water harvesting efficiency, and winter wheat productivity. Results indicated that the integrated RT drastically increased infiltration, producing a rate that was 47.51% higher than MT and 64.56% higher than CT. In addition, results showed that the lowest values of runoff and soil losses, 4.91 mm and 0.65 t ha-1 respectively, were recorded under the integrated RT, while the highest values, 11.36 mm and 1.66 t ha -1 respectively, occurred under the CT. In addition, two field experiments were carried out in semi-arid environment in Madrid with barley and maize as the main crops. For the rainfed barley experiment, two tillage practices (RT, and MT) were performed. Results showed that soil water potential increased quite steadily and were consistently greater in MT and, irrespective of the entire observation period, RT decreased soil water potential by 43.6, 5.7, and 82.3% compared to MT at soil depths (10, 20, and 30 cm, respectively). In addition, clear differences in crop yield and yield components were observed between the two tillage systems, grain yield (up to 14%) and biomass yield (up to 8.8%) were increased by RT. For the irrigated maize experiment, four tillage practices (RT, MT, ZT, and CT) were performed. Results showed that ZT and RT had the lowest soil water potential and soil temperature. Compared to CT treatment, ZT and RT decreased soil water potential by 72 and 23% respectively, at soil depth of 40 cm, and decreased soil temperature by 1.1 and 0.8 0C respectively, at soil depth of 5 cm. Also, ZT had the highest soil bulk density and penetration resistance, which delayed the maize growth and decreased the grain yield that was 15.4% lower than CT treatment. RT increased maize grain yield about 12.8% compared to ZT. On the other hand, no significant differences among (RT, MT, and CT) on maize yield were found. In summary, according to the results from these experiments using reservoir tillage to make depressions after seeding, these depression’s internal surfaces are consolidated in such a way that the water is held to percolate into the soil and thus allowing time to offer moisture to the plant rooting zone over an extended period of time. Reservoir tillage could be used as an alternative method in arid and semi-arid regions and it retains moisture in-situ, through structures that reduce runoff and thus can result in improved crop yields.

Information reconciliation for Quantum Key Distribution

Secret-key agreement, a well-known problem in cryptography, allows two parties holding correlated sequences to agree on a secret key communicating over a public channel. It is usually divided into three different procedures: advantage distillation, information reconciliation and privacy amplification. The efficiency of each one of these procedures is needed if a positive key rate is to be attained from the legitimate parties? correlated sequences. Quantum key distribution (QKD) allows the two parties to obtain correlated sequences, provided that they have access to an authenticated channel. The new generation of QKD devices is able to work at higher speeds and in noisier or more absorbing environments. This exposes the weaknesses of current information reconciliation protocols, a key component to their performance. Here we present a new protocol based in low-density parity-check (LDPC) codes that presents the advantages of low interactivity, rate adaptability and high efficiency,characteristics that make it highly suitable for next generation QKD devices.

Energy saving potential of semi-transparent photovoltaic elements for building integration

Within the building energy saving strategies, BIPV (building integrated photovoltaic systems) present a promising potential based on the close relationship existing between these multifunctional systems and the overall building energy balance. Building integration of STPV (semi-transparent photovoltaic) elements affects deeply the building energy demand since it influences the heating, cooling and lighting loads as well as the local electricity generation. This work analyses over different window-to-wall ratios the overall energy performance of five STPV elements, each element having a specific degree of transparency, in order to assess the energy saving potential compared to a conventional solar control glass compliant with the local technical standard. The prior optical characterization, focused to measure the spectral properties of the elements, was experimentally undertaken. The obtained data were used to perform simulations based on a reference office building using a package of specific software tools (DesignBuilder, EnergyPlus, PVsyst, and COMFEN) to take proper account of the STPV peculiarities. To evaluate the global energy performance of the STPV elements a new Energy Balance Index was formulated. The results show that for intermediate and large façade openings the energy saving potential provided by the STPV solutions ranges between 18% and 59% compared to the reference glass.

Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications

El objetivo de este trabajo es un estudio profundo del crecimiento selectivo de nanoestructuras de InGaN por epitaxia de haces moleculares asistido por plasma, concentrandose en el potencial de estas estructuras como bloques constituyentes en LEDs de nueva generación. Varias aproximaciones al problema son discutidas; desde estructuras axiales InGaN/GaN, a estructuras core-shell, o nanoestructuras crecidas en sustratos con orientaciones menos convencionales (semi polar y no polar). La primera sección revisa los aspectos básicos del crecimiento auto-ensamblado de nanocolumnas de GaN en sustratos de Si(111). Su morfología y propiedades ópticas son comparadas con las de capas compactas de GaN sobre Si(111). En el caso de las columnas auto-ensambladas de InGaN sobre Si(111), se presentan resultados sobre el efecto de la temperatura de crecimiento en la incorporación de In. Por último, se discute la inclusión de nanodiscos de InGaN en las nanocolumnas de GaN. La segunda sección revisa los mecanismos básicos del crecimiento ordenado de nanoestructuras basadas en GaN, sobre templates de GaN/zafiro. Aumentando la relación III/V localmente, se observan cambios morfológicos; desde islas piramidales, a nanocolumnas de GaN terminadas en planos semipolares, y finalmente, a nanocolumnas finalizadas en planos c polares. Al crecer nanodiscos de InGaN insertados en las nanocolumnas de GaN, las diferentes morfologias mencionadas dan lugar a diferentes propiedades ópticas de los nanodiscos, debido al diferente carácter (semi polar o polar) de los planos cristalinos involucrados. La tercera sección recoge experimentos acerca de los efectos que la temperatura de crecimiento y la razón In/Ga tienen en la morfología y emisión de nanocolumnas ordenadas de InGaN crecidas sobre templates GaN/zafiro. En el rango de temperaturas entre 650 y 750 C, la incorporacion de In puede modificarse bien por la temperatura de crecimiento, o por la razón In/Ga. Controlar estos factores permite la optimización de la longitud de onda de emisión de las nanocolumnas de InGaN. En el caso particular de la generación de luz blanca, se han seguidos dos aproximaciones. En la primera, se obtiene emisión amarilla-blanca a temperatura ambiente de nanoestructuras donde la región de InGaN consiste en un gradiente de composiciones de In, que se ha obtenido a partir de un gradiente de temperatura durante el crecimiento. En la segunda, el apilamiento de segmentos emitiendo en azul, verde y rojo, consiguiendo la integración monolítica de estas estructuras en cada una de las nanocolumnas individuales, da lugar a emisores ordenados con un amplio espectro de emisión. En esta última aproximación, la forma espectral puede controlarse con la longitud (duración del crecimiento) de cada uno de los segmentos de InGaN. Más adelante, se presenta el crecimiento ordenado, por epitaxia de haces moleculares, de arrays de nanocolumnas que son diodos InGaN/GaN cada una de ellas, emitiendo en azul (441 nm), verde (502 nm) y amarillo (568 nm). La zona activa del dispositivo consiste en una sección de InGaN, de composición constante nominalmente y longitud entre 250 y 500 nm, y libre de defectos extendidos en contraste con capas compactas de InGaN de similares composiciones y espesores. Los espectros de electroluminiscencia muestran un muy pequeño desplazamiento al azul al aumentar la corriente inyectada (desplazamiento casi inexistente en el caso del dispositivo amarillo), y emisiones ligeramente más anchas que en el caso del estado del arte en pozos cuánticos de InGaN. A continuación, se presenta y discute el crecimiento ordenado de nanocolumnas de In(Ga)N/GaN en sustratos de Si(111). Nanocolumnas ordenadas emitiendo desde el ultravioleta (3.2 eV) al infrarrojo (0.78 eV) se crecieron sobre sustratos de Si(111) utilizando una capa compacta (“buffer”) de GaN. La morfología y eficiencia de emisión de las nanocolumnas emitiendo en el rango espectral verde pueden ser mejoradas ajustando las relaciones In/Ga y III/N, y una eficiencia cuántica interna del 30% se deriva de las medidas de fotoluminiscencia en nanocolumnas optimizadas. En la siguiente sección de este trabajo se presenta en detalle el mecanismo tras el crecimiento ordenado de nanocolumnas de InGaN/GaN emitiendo en el verde, y sus propiedades ópticas. Nanocolumnas de InGaN/GaN con secciones largas de InGaN (330-830 nm) se crecieron tanto en sustratos GaN/zafiro como GaN/Si(111). Se encuentra que la morfología y la distribución espacial del In dentro de las nanocolumnas dependen de las relaciones III/N e In/Ga locales en el frente de crecimiento de las nanocolumnas. La dispersión en el contenido de In entre diferentes nanocolumnas dentro de la misma muestra es despreciable, como indica las casi identicas formas espectrales de la catodoluminiscencia de una sola nanocolumna y del conjunto de ellas. Para las nanocolumnas de InGaN/GaN crecidas sobre GaN/Si(111) y emitiendo en el rango espectral verde, la eficiencia cuántica interna aumenta hasta el 30% al disminuir la temperatura de crecimiento y aumentar el nitrógeno activo. Este comportamiento se debe probablemente a la formación de estados altamente localizados, como indica la particular evolución de la energía de fotoluminiscencia con la temperatura (ausencia de “s-shape”) en muestras con una alta eficiencia cuántica interna. Por otro lado, no se ha encontrado la misma dependencia entre condiciones de crecimiento y efiencia cuántica interna en las nanoestructuras InGaN/GaN crecidas en GaN/zafiro, donde la máxima eficiencia encontrada ha sido de 3.7%. Como alternativa a las nanoestructuras axiales de InGaN/GaN, la sección 4 presenta resultados sobre el crecimiento y caracterización de estructuras core-shell de InGaN/GaN, re-crecidas sobre arrays de micropilares de GaN fabricados por ataque de un template GaN/zafiro (aproximación top-down). El crecimiento de InGaN/GaN es conformal, con componentes axiales y radiales en el crecimiento, que dan lugar a la estructuras core-shell con claras facetas hexagonales. El crecimiento radial (shell) se ve confirmado por medidas de catodoluminiscencia con resolución espacial efectuadas en un microscopio electrónico de barrido, asi como por medidas de microscopía de transmisión de electrones. Más adelante, el crecimiento de micro-pilares core-shell de InGaN se realizó en pilares GaN (cores) crecidos selectivamente por epitaxia de metal-orgánicos en fase vapor. Con el crecimiento de InGaN se forman estructuras core-shell con emisión alrededor de 3 eV. Medidas de catodoluminiscencia resuelta espacialmente indican un aumento en el contenido de indio del shell en dirección a la parte superior del pilar, que se manifiesta en un desplazamiento de la emisión de 3.2 eV en la parte inferior, a 3.0 eV en la parte superior del shell. Este desplazamiento está relacionado con variaciones locales de la razón III/V en las facetas laterales. Finalmente, se demuestra la fabricación de una estructura pin basada en estos pilares core-shell. Medidas de electroluminiscencia resuelta espacialmente, realizadas en pilares individuales, confirman que la electroluminiscencia proveniente del shell de InGaN (diodo lateral) está alrededor de 3.0 eV, mientras que la emisión desde la parte superior del pilar (diodo axial) está alrededor de 2.3 eV. Para finalizar, se presentan resultados sobre el crecimiento ordenado de GaN, con y sin inserciones de InGaN, en templates semi polares (GaN(11-22)/zafiro) y no polares (GaN(11-20)/zafiro). Tras el crecimiento ordenado, gran parte de los defectos presentes en los templates originales se ven reducidos, manifestándose en una gran mejora de las propiedades ópticas. En el caso de crecimiento selectivo sobre templates con orientación GaN(11-22), no polar, la formación de nanoestructuras con una particular morfología (baja relación entre crecimiento perpedicular frente a paralelo al plano) permite, a partir de la coalescencia de estas nanoestructuras, la fabricación de pseudo-templates no polares de GaN de alta calidad. ABSTRACT The aim of this work is to gain insight into the selective area growth of InGaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. Several nanocolumn-based approaches such as standard axial InGaN/GaN structures, InGaN/GaN core-shell structures, or InGaN/GaN nanostructures grown on semi- and non-polar substrates are discussed. The first section reviews the basics of the self-assembled growth of GaN nanocolumns on Si(111). Morphology differences and optical properties are compared to those of GaN layer grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanocolumns grown on Si(111) is described. The second section reviews the basic growth mechanisms of selectively grown GaNbased nanostructures on c-plane GaN/sapphire templates. By increasing the local III/V ratio morphological changes from pyramidal islands, to GaN nanocolumns with top semi-polar planes, and further to GaN nanocolumns with top polar c-planes are observed. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semipolar and polar nature of the crystal planes involved. The third section reports on the effect of the growth temperature and In/Ga ratio on the morphology and light emission characteristics of ordered InGaN nanocolumns grown on c-plane GaN/sapphire templates. Within the growth temperature range of 650 to 750oC the In incorporation can be modified either by the growth temperature, or the In/Ga ratio. Control of these factors allows the optimization of the InGaN nanocolumns light emission wavelength. In order to achieve white light emission two approaches are used. First yellow-white light emission can be obtained at room temperature from nanostructures where the InGaN region is composition-graded by using temperature gradients during growth. In a second approach the stacking of red, green and blue emitting segments was used to achieve the monolithic integration of these structures in one single InGaN nanocolumn leading to ordered broad spectrum emitters. With this approach, the spectral shape can be controlled by changing the thickness of the respective InGaN segments. Furthermore the growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells. Next the selective area growth of In(Ga)N/GaN nanocolumns on Si(111) substrates is discussed. Ordered In(Ga)N/GaN nanocolumns emitting from ultraviolet (3.2 eV) to infrared (0.78 eV) were then grown on top of GaN-buffered Si substrates. The morphology and the emission efficiency of the In(Ga)N/GaN nanocolumns emitting in the green could be substantially improved by tuning the In/Ga and total III/N ratios, where an estimated internal quantum efficiency of 30 % was derived from photoluminescence data. In the next section, this work presents a study on the selective area growth mechanisms of green-emitting InGaN/GaN nanocolumns and their optical properties. InGaN/GaN nanocolumns with long InGaN sections (330-830nm) were grown on GaN/sapphire and GaN-buffered Si(111). The nanocolumn’s morphology and spatial indium distribution is found to depend on the local group (III)/N and In/Ga ratios at the nanocolumn’s top. A negligible spread of the average indium incorporation among different nanostructures is found as indicated by similar shapes of the cathodoluminescence spectra taken from single nanocolumns and ensembles of nanocolumns. For InGaN/GaN nanocolumns grown on GaN-buffered Si(111), all emitting in the green spectral range, the internal quantum efficiency increases up to 30% when decreasing growth temperature and increasing active nitrogen. This behavior is likely due to the formation of highly localized states, as indicated by the absence of a complete s-shape behavior of the PL peak position with temperature (up to room temperature) in samples with high internal quantum efficiency. On the other hand, no dependence of the internal quantum efficiency on the growth conditions is found for InGaN/GaN nanostructures grown on GaN/sapphire, where the maximum achieved efficiency is 3.7%. As alternative to axial InGaN/GaN nanostructures, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods etched from a GaN/sapphire template. Growth of InGaN/GaN is conformal, with axial and radial growth components leading to core-shell structures with clear hexagonal facets. The radial InGaN growth (shell) is confirmed by spatially resolved cathodoluminescence performed in a scanning electron microscopy as well as in scanning transmission electron microscopy. Furthermore the growth of InGaN core-shell micro pillars using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template is demonstrated. Upon InGaN overgrowth core-shell structures with emission at around 3.0 eV are formed. With spatially resolved cathodoluminescence, an increasing In content towards the pillar top is found to be present in the InGaN shell, as indicated by a shift of CL peak position from 3.2 eV at the shell bottom to 3.0 eV at the shell top. This shift is related to variations of the local III/V ratio at the side facets. Further, the successful fabrication of a core-shell pin diode structure is demonstrated. Spatially resolved electroluminescence measurements performed on individual micro LEDs, confirm emission from the InGaN shell (lateral diode) at around 3.0 eV, as well as from the pillar top facet (axial diode) at around 2.3 eV. Finally, this work reports on the selective area growth of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the GaN templates is strongly reduced as indicated by TEM and a dramatic improvement of the optical properties. In case of SAG on non-polar (11-22) templates the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of the nanostructures.

Rate-Adaptive LDPC-based key reconciliation for high performance quantum key distribution

The postprocessing or secret-key distillation process in quantum key distribution (QKD) mainly involves two well-known procedures: information reconciliation and privacy amplification. Information or key reconciliation has been customarily studied in terms of efficiency. During this, some information needs to be disclosed for reconciling discrepancies in the exchanged keys. The leakage of information is lower bounded by a theoretical limit, and is usually parameterized by the reconciliation efficiency (or inefficiency), i.e. the ratio of additional information disclosed over the Shannon limit. Most techniques for reconciling errors in QKD try to optimize this parameter. For instance, the well-known Cascade (probably the most widely used procedure for reconciling errors in QKD) was recently shown to have an average efficiency of 1.05 at the cost of a high interactivity (number of exchanged messages). Modern coding techniques, such as rate-adaptive low-density parity-check (LDPC) codes were also shown to achieve similar efficiency values exchanging only one message, or even better values with few interactivity and shorter block-length codes.