Minimization of the effects of harmonics and voltage dip caused by electric arc furnace

This study examines the thermal efficiency of the operation of arc furnace and the effects of harmonics and voltage dips of a factory located near Bangkok. It also attempts to find ways to improve the performance of the arc furnace operation and minimize the effects of both harmonics and voltage dips. A dynamic model of the arc furnace has been developed incorporating both electrical and thermal characteristics. The model can be used to identify potential areas for improvement of the furnace and its operation. Snapshots of waveforms and measurement of RMS values of voltage, current and power at the furnace, at other feeders and at the point of common coupling were recorded. Harmonic simulation program and electromagnetic transient simulation program were used in the study to model the effects of harmonics and voltage dips and to identify appropriate static and dynamic filters to minimize their effects within the factory. The effects of harmonics and voltage dips were identified in records taken at the point of common coupling of another factory supplied by another feeder of the same substation. Simulation studies were made to examine the results on the second feeder when dynamic filters were used in the factory which operated the arc furnace. The methodology used and the mitigation strategy identified in the study are applicable to general situation in a power distribution system where an arc furnace is a part of the load of a customer

Artificial neural network application to power system voltage stability improvement

As power systems grow in their size and interconnections, their complexity increases. Rising costs due to inflation and increased environmental concerns has made transmission, as well as generation systems be operated closer to design limits. Hence power system voltage stability and voltage control are emerging as major problems in the day-to-day operation of stressed power systems. For secure operation and control of power systems under normal and contingency conditions it is essential to provide solutions in real time to the operator in energy control center (ECC). Artificial neural networks (ANN) are emerging as an artificial intelligence tool, which give fast, though approximate, but acceptable solutions in real time as they mostly use the parallel processing technique for computation. The solutions thus obtained can be used as a guide by the operator in ECC for power system control. This paper deals with development of an ANN architecture, which provide solutions for monitoring, and control of voltage stability in the day-to-day operation of power systems.

Novel algorithm for online voltage stability assessment based on feed forward neural network

This paper presents an artificial feed forward neural network (FFNN) approach for the assessment of power system voltage stability. A novel approach based on the input-output relation between real and reactive power, as well as voltage vectors for generators and load buses is used to train the neural net (NN). The input properties of the feed forward network are generated from offline training data with various simulated loading conditions using a conventional voltage stability algorithm based on the L-index. The neural network is trained for the L-index output as the target vector for each of the system loads. Two separate trained NN, corresponding to normal loading and contingency, are investigated on the 367 node practical power system network. The performance of the trained artificial neural network (ANN) is also investigated on the system under various voltage stability assessment conditions. As compared to the computationally intensive benchmark conventional software, near accurate results in the value of L-index and thus the voltage profile were obtained. Proposed algorithm is fast, robust and accurate and can be used online for predicting the L-indices of all the power system buses. The proposed ANN approach is also shown to be effective and computationally feasible in voltage stability assessment as well as potential enhancements within an overall energy management system in order to determining local and global stability indices

Simulation of surface and volume stress for high voltage transmission insulators

The bulk of power transmission from the generating stations to the load centres is carried through overhead lines. The distances involved could span several hundreds of kilometres. To minimize line losses, power transmission over such long distances is carried out at high voltages (several hundreds of kV). A network of outdoor lines operating at different voltages has been found to be the most economical method of power delivery. The disc insulators perform dual task of mechanically supporting and electrically isolating the live phase conductors from the support tower. These insulators have to perform under various environmental conditions; hence the electrical stress distribution along the insulators governs the possible flashover, which is quite detrimental to the system. In view of this the present investigation aims to simulate the surface electric field stress on different types of porcelain/ceramic insulators; both normal and anti-fog type discs which are used for high voltage transmission/distribution systems are considered. The surface charge simulation method is employed for the field computation to simulate potential, electric field, surface and bulk/volume stress.

Construction of Equivalent Circuit of a Single and Isolated Transformer Winding From FRA Data Using the ABC Algorithm

This paper reports the results of employing an artificial bee colony search algorithm for synthesizing a mutually coupled lumped-parameter ladder-network representation of a transformer winding, starting from its measured magnitude frequency response. The existing bee colony algorithm is suitably adopted by appropriately defining constraints, inequalities, and bounds to restrict the search space and thereby ensure synthesis of a nearly unique ladder network corresponding to each frequency response. Ensuring near-uniqueness while constructing the reference circuit (i.e., representation of healthy winding) is the objective. Furthermore, the synthesized circuits must exhibit physical realizability. The proposed method is easy to implement, time efficient, and problems associated with the supply of initial guess in existing methods are circumvented. Experimental results are reported on two types of actual, single, and isolated transformer windings (continuous disc and interleaved disc).

Self Repair in Circuits-Automating Open Fault Repair in Integrated Circuits Using Field-Induced Aggregation of Carbon Nanotubes

This paper presents studies on the use of carbon nanotubes dispersed in an insulating fluid to serve as an automaton for healing open-circuit interconnect faults in integrated circuits. The physics behind the repair mechanism is the electric-field-induced diffusion limited aggregation. On the occurrence of an open fault, the repair is automatically triggered due to the presence of an electric field across the gap. We perform studies on the repair time as a function of the electric field and dispersion concentrations with the above application in mind.

Analysis of current voltage characteristics of MWIR homojunction photodiodes for uncooled operation

Dark currents n(+)/v/p(+) Hg0.69Cd0.Te-31 mid wave infrared photodiodes were measured at room temperature. The diodes exhibited negative differential resistance at room-temperature, but with increasing leakage currents as a function of reverse bias. The current-voltage characteristics were simulated and fitted by incorporating trap assisted tunneling via traps and Shockley-Read-Hall generation recombination process due to dislocations in the carrier transport equations. The thermal suppression of carriers was simulated by taking energy level of trap (E-t), trap density (N-t) and the doping concentrations of n(+) and v regions as fitting parameters. Values of E-t and N-t were 0.78E(g) and similar to 6-9 x 10(14) cm(-3) respectively for most of the diodes. Variable temperature current voltage measurements on variable area diode array (VADA) structures confirmed the fact that variation in zero bias resistance area product (R(0)A) is related to g-r processes originating from variation in concentration and kind of defects that intersect a junction area. (C) 2012 Elsevier B.V. All rights reserved.

Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

We report on the threshold voltage modeling of ultra-thin (1 nm-5 nm) silicon body double-gate (DG) MOSFETs using self-consistent Poisson-Schrodinger solver (SCHRED). We define the threshold voltage (V th) of symmetric DG MOSFETs as the gate voltage at which the center potential (Φ c) saturates to Φ c (s a t), and analyze the effects of oxide thickness (t ox) and substrate doping (N A) variations on V th. The validity of this definition is demonstrated by comparing the results with the charge transition (from weak to strong inversion) based model using SCHRED simulations. In addition, it is also shown that the proposed V t h definition, electrically corresponds to a condition where the inversion layer capacitance (C i n v) is equal to the oxide capacitance (C o x) across a wide-range of substrate doping densities. A capacitance based analytical model based on the criteria C i n v C o x is proposed to compute Φ c (s a t), while accounting for band-gap widening. This is validated through comparisons with the Poisson-Schrodinger solution. Further, we show that at the threshold voltage condition, the electron distribution (n(x)) along the depth (x) of the silicon film makes a transition from a strong single peak at the center of the silicon film to the onset of a symmetric double-peak away from the center of the silicon film. © 2012 American Institute of Physics.

A method for stabilizing the cis prolyl peptide bond: influence of an unusual n -> pi* interaction in 1,3-oxazine and 1,3-thiazine containing peptidomimetics

The cis/trans isomer ratios of the Xaa-Pyr (Pyr = pyrrolidine) 3 degrees amide bonds are significantly high (similar to 90% cis) in the novel peptidomimetics where Pyr contains 1,3-oxazine (Oxa) or 1,3-thiazine (Thi) at its 2 position. We find that an unusual n -> pi(i-1)* interaction, selectively stabilizes the cis conformer and the n X n repulsion destabilizes the trans conformer of these molecules. Both these electronic effects oppose the steric effects in the 3 degrees amide bond. The structural requirements for manifestation of these electronic effects are determined. (c) 2012 Elsevier Ltd. All rights reserved.

Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes

In this report, the currentvoltage (IV) characteristics of Au/GaN Schottky diodes have been carried out in the temperature range of 300510?K. The estimated values of the Schottky-barrier height (SBH) and the ideality factor of the diodes based on the thermionic emission (TE) mechanism were found to be temperature dependent. The barrier height was found to increase and the ideality factor to decrease with increasing temperature. The conventional Richardson plot of ln(Is/T2) versus 1/kT gives the SBH of 0.51?eV and Richardson constant value of 3.23?X?10-5?A?cm-2?K-2 which is much lower than the known value of 26.4?A?cm-2?K-2 for GaN. Such discrepancies of the SBH and Richardson constant value were attributed to the existence of barrier-height inhomogeneities at the Au/GaN interface. The modified Richardson plot of ln(Is/T2)q2 sigma 2/2k2T2 versus q/kT, by assuming a Gaussian distribution of barrier heights at the Au/GaN interface, provided the SBH of 1.47?eV and Richardson constant value of 38.8?A?cm-2?K-2. The temperature dependence of the barrier height is interpreted on the basis of existence of the Gaussian distribution of the barrier heights due to the barrier-height inhomogeneities at the Au/GaN interface.

Performance of telecommunication modules to 0.5µS-100kHz ring wave surges

This paper presents an experimental investigations performed on various electronic components used in telecommunication networks and those used in avionics for the ring wave surge voltages. IEEE Std C 62.41.1-2002 specifies a stringent requirement of waveforms to be applied for the evaluation of telecom components. To meet the necessary requirements in the absence of commercial equipment for generating the required waveforms, special efforts were made to fabricate a ring wave surge generator as per prescribed standards. The developed surge generator is capable of delivering an output of 0.5 mu s-100kHz which meets the requirements of telecom standards prescribed for evaluation of various modules used in low voltage ac power circuits used in communication networks. The results of the experimental investigations obtained on various modules used in communication networks are presented.