A composite discrete traction vector.

Tesis (Maestría en Ciencias con Orientación en Ingeniería Estructural) UANL, 2013.

Estudio del crecimiento cristalino de nanovarillas de ZnO verticalmente alineadas.

Tesis (Maestría en Ingeniería Físico Industrial) UANL, 2014.

Degradación fotocatalítica con luz visible de los herbicidas 2,4-D y picloram usando como catalizador ZnO modificado con nitrógeno y seguimiento del proceso a través del sistema MSFIA.

Tesis (Maestría en Ciencias con orientación en Química Analítica Ambiental) UANL, 2014.

Síntesis de nanoestructuras en 1D de ZnO para su uso en aplicaciones de energía y ambientales.

Tesis (Doctor en Ingeniería Física Industrial) UANL, 2012.

Síntesis de nanoestructuras bidimensionales de oro y plata depositadas sobre TiO2 por rocío pirolítico asistido por ultrasonido.

Tesis (Doctorado en Química de los Materiales) UANL, 2011.

Aplicación de los catalizadores ZnO-Fe?O? y ZnO-Fe? en la degradación fotocatalítica solar de dicamba y 2,4-D.

Tesis (Doctor en Ciencias con orientación en Química Analítica Ambiental) UANL, 2013.

Carbon fiber recovery using subcritical and supercritical fluids for chemical recycling of thermoset composite materials.

Tesis (Doctor en Ingeniería de Materiales) UANL, 2014.

Caractérisation d'une nouvelle cytokine composite formée de CLF et de la sous-unité p28 de l'IL-27

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal

Influence de la taille de départ, de l’état d’agglomération et de la dose de nanoparticules de dioxyde de titane (TiO2) inhalées sur la réponse pulmonaire chez le rat

En raison de leur petite taille, les nanoparticules (NP) (< 100 nm) peuvent coaguler très rapidement ce qui favorise leur pénétration dans l’organisme sous forme d’agglomérats. L’objectif de cette recherche est d’étudier l’influence de l’état d’agglomération de NP de dioxyde de titane (TiO2) de trois tailles de départ différentes, 5, 10-30 ou 50 nm sur la toxicité pulmonaire chez le rat mâle (F344) exposé à des aérosols de 2, 7 ou 20 mg/m3 pendant 6 heures. Dans une chambre d’inhalation, six groupes de rats (n = 6 par groupe) ont été exposés par inhalation aiguë nez-seulement à des aérosols ayant une taille primaire de 5 nm, mais produits sous forme faiblement (< 100 nm) ou fortement (> 100 nm) agglomérée à 2, 7 et 20 mg/m3. De façon similaire, quatre autres groupes de rats ont été exposés à 20 mg/m3 à des aérosols ayant une taille primaire de 10-30 et 50 nm. Les différents aérosols ont été générés par nébulisation à partir de suspensions ou par dispersion à sec. Pour chaque concentration massique, un groupe de rats témoins (n = 6 par groupe) a été exposé à de l’air comprimé dans les mêmes conditions. Les animaux ont été sacrifiés 16 heures après la fin de l’exposition et les lavages broncho-alvéolaires ont permis de doser des marqueurs d’effets inflammatoires, cytotoxiques et de stress oxydant. Des coupes histologiques de poumons ont également été analysées. L’influence de l’état d’agglomération des NP de TiO2 n’a pu être discriminée à 2 mg/m3. Aux concentrations massiques de 7 et 20 mg/m3, nos résultats montrent qu’une réponse inflammatoire aiguë est induite suite à l'exposition aux aérosols fortement agglomérés. En plus de cette réponse, l’exposition aux aérosols faiblement agglomérés à 20 mg/m3 s’est traduite par une augmentation significative de la 8-isoprostane et de la lactate déshydrogénase. À 20 mg/m3, les effets cytotoxiques étaient plus importants suite à l’exposition aux NP de 5 nm faiblement agglomérées. Ces travaux ont montré dans l'ensemble que différents mécanismes de toxicité pulmonaire peuvent être empruntés par les NP de TiO2 en fonction de la taille de départ et de l’état d’agglomération.

Growth and Characterization of ZnO based Heterojunction diodes and ZnO Nanostructuresby Pulsed Laser Ablation

Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.

Luminescence from Surfactant-Free ZnO Quantum Dots Prepared by Laser Ablation in Liquid

Highly transparent, luminescent and biocompatible ZnO quantum dots were prepared in water, methanol, and ethanol using liquid-phase pulsed laser ablation technique without using any surfactant. Transmission electron microscopy analysis confirmed the formation of good crystalline ZnO quantum dots with a uniform size distribution of 7 nm. The emission wavelength could be varied by varying the native defect chemistry of ZnO quantum dots and the laser fluence. Highly luminescent nontoxic ZnO quantum dots have exciting application potential as florescent probes in biomedical applications.

Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

Heterojunction diodes of n-type ZnO/p-type silicon (100) were fabricated by 12 pulsed laser deposition of ZnO films on p-Si substrates in oxygen ambient at 13 different pressures. These heterojunctions were found to be rectifying with a 14 maximum forward-to-reverse current ratio of about 1,000 in the applied 15 voltage range of -5 V to +5 V. The turn-on voltage of the heterojunctions was 16 found to depend on the ambient oxygen pressure during the growth of the ZnO 17 film. The current density–voltage characteristics and the variation of the 18 series resistance of the n-ZnO/p-Si heterojunctions were found to be in line 19 with the Anderson model and Burstein-Moss (BM) shift.

Synthesis of ZnO nanoparticles by hydrothermal method

Stable, OH free zinc oxide (ZnO) nanoparticles were synthesized by hydrothermal method by varying the growth temperature and concentration of the precursors. The formation of ZnO nanoparticles were confirmed by x-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED) studies. The average particle size have been found to be about 7-24 nm and the compositional analysis is done with inductively coupled plasma atomic emission spectroscopy (ICP-AES). Diffuse reflectance spectroscopy (DRS) results shows that the band gap of ZnO nanoparticles is blue shifted with decrease in particle size. Photoluminescence properties of ZnO nanoparticles at room temperature were studied and the green photoluminescent emission from ZnO nanoparticles can originate from the oxygen vacancy or ZnO interstitial related defects.

Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

Transparent diode heterojunction on ITO coated glass substrates was fabricated using p-type AgCoO2 and n-type ZnO films by pulsed laser deposition (PLD). The PLD of AgCoO2 thin films was carried out using the pelletized sintered target of AgCoO2 powder, which was synthesized in-house by the hydrothermal process. The band gap of these thin films was found to be ~3.89 eV and they had transmission of~55% in the visible spectral region. Although Hall measurements could only indicate mixed carrier type conduction but thermoelectric power measurements of Seebeck coefficient confirmed the p-type conductivity of the grown AgCoO2 films. The PLD grown ZnO films showed a band gap of ~3.28 eV, an average optical transmission of ~85% and n-type carrier density of~4.6×1019 cm− 3. The junction between p-AgCoO2 and n-ZnO was found to be rectifying. The ratio of forward current to the reverse current was about 7 at 1.5 V. The diode ideality factor was much greater than 2.

Effect of processing parameters on the mechanical properties of short Kevlar aramid fibre-thermoplastic polyurethane composite

The effect of various processing parameters, such as nip gap, friction ratio and roll temperature, on the tensile properties of short Kevlar aramid fibre-thermoplastic polyurethane composite has been investigated and the tensile and tear fracture surfaces have been characterised using a scanning electron microscope. A nip gap of 0.45 mm, a friction ratio of 1.15 and a roll temperature of 62°C was found to give optimum mechanical properties. Scanning electron microscopy study revealed a higher extent of fibre orientation in the milling direction in the above condition.