Fluorescenec Emission of SrS:Eu2+ Phosphor-Energy Level Splitting of Eu2+

A method of preparation of strontium sulphide phosphors doped with europium is given. Nitrogen laser excited fluorescence emission spectra of these phosphors in the visible region are recorded. A band with line structure in the region 350-430 nm and a new broad band at 460 nm are observed. The splitting pattern for the 6p levels of Eu 2+ are given.

Study of solvent effect in laser emission from Coumarin 540 dye solution

The results of a brief investigation of the amplified spontaneous emission and lasing characteristics of Coumarin 540 dye in as many as ten different solvents are reported. It has been found that C 540 dye solutions contained within a rectangular quartz cuvette give laser emission with well resolved equally spaced modes when pumped with a 476 nm beam. The modes were found to originate from the subcavities formed by the plane-parallel walls of the cuvette containing the high-gain medium. While the quantum yield remains a decisive factor, a clear correlation between the total width of the emission spectra and the refractive indices of the solvents of the respective samples has been demonstrated. The well-resolved mode structure exhibited by the emission spectra gives clear evidence of the lasing action taking place in the gain medium, and the number of modes enables us to compare the gain of the media in different samples. A detailed discussion of the solvent effect in the lasing characteristics of C540 in different solutions is given.

Effect of Ce3+ Ion on the X-Ray Induced Fluorescence Emission from CaS

The effect of Ce3+ on the fluorescence emission from CaS:Ce3+ phosphor is studied using X-ray excitation. Apart from the emission in the visible region, the phosphor also shows fluorescence emission in the ultraviolet region. Variation in wavelengths and intensities of these emissions due to change in dopant concentration is also analysed.

Fluorescence Decay Characteristics of the Green Emission From CaF2:Ho3+

Variations in the decay times of the characteristic green emissions at 522.7, 551.3, 549.6, 547.6, 542.2, 540.2, 535.9 and 533.5nm from CaF2 :H03+ with concentration are studied at RT and LNT. A pulsed N2 laser beam of power density 1.5 MW cm-2 is used for the excitation. Temperature dependent concentration quenching of the decay times are observed for all the emission bands. But an increase in the decay time due to the reabsorption process is also observed for a few of the above bands.

Excitation and Emission Characteristics of Pretreated SrS:Mn:Ce Phosphors

Excitation and emission spectra of SrS : Mn : Ce phosphors have been studied in detail at various Mn and Ce concentrations. In order to study the effect of external pressure on phosphors, the samples were pretreated under various pressures. Four bands around 470 nm, 530 nm, 310 nm and 620 nm were observed, when the samples were excited with 265 nm radiation. The effect of pressure is to reduce the fluorescence ability of the phosphors, and the luminescence vanishes above O· 1 ton m-2 pressure. The fluorescence ability, however, can be regained on retiring the sample. The emission mechanism has been attributed to two luminescentcenters in the forbidden gap. An appreciable amount of photocurrent has also been observed for the sample.

Plà de gestió i viabilitat econòmica. Millores al projecte de museïtzació i plà d'usos del museu Casa Amatller (MCA)

Màster Oficial en Gestió del Patrimoni Cultural

Studies an Optical and X-ray Emission Processes in Laser Produced Plasma

Developments in laser technology over the past few years have made it possible to do experiments with focused intensities of IO"-102' Wcm'z. Short-pulse high-intensity lasers are able to accelerate protons and heavier ions to multi-MeV energies during their interaction with solid targets, gas jets and clusters. When such a laser radiation is focused at the intensity above 10” Wcm'2, local electric field strength will be almost equivalent to that within an atom. Hence, new nonlinear optical phenomena will be expected in the field of light matter interaction. Most of the research in the material interaction using high power lasers, especially related to plasma interaction, has been directed to the short pulse x-ray generation- Nanosecond laser interactions with solid targets also generate plasmas which emit radiation mainly in the optical region, the understanding of which is far from satisfactory. This thesis deals with a detailed study of some of the dynamical processes in plasmas generated by nanosecond and femtosecond lasers

Photoluminescence studies of spray pyrolytically grown nanostructured tin oxide semiconductor thin films on glass substrates

SnO2 nanocrystalline thin films were deposited on glass substrates by the spray pyrolysis technique in air atmosphere at 375, 400, 425, 450 and 500 ◦C substrate temperatures. The obtained films were characterized by using XRD. The room temperature photoluminescence (PL) spectra of these films have near band edge (NBE) and deep level emission under the excitation of 325 nm radiation. NBE PL peak intensity decreased consistently with temperatures for samples prepared at 400, 450 and 500 ◦C, while a sudden reduction in intensity is observed for the sample prepared at 425 ◦C. A similar effect was observed for the optical transmittance spectra. These effects can be explained on the basis of the change in population of oxygen vacancies as indicated by the change in a values

Enhanced UV emission from ZnO nanoflowers synthesized by the hydrothermal process

ZnO nanoflowers were synthesized by the hydrothermal process at an optimized growth temperature of 200 ◦C and a growth/reaction time of 3 h. As-prepared ZnO nanoflowers were characterized by x-ray diffraction, scanning electron microscopy, UV–visible and Raman spectroscopy. X-ray diffraction and Raman studies reveal that the as-synthesized flower-like ZnO nanostructures are highly crystalline with a hexagonal wurtzite phase preferentially oriented along the (1 0 1 1) plane. The average length (234–347 nm) and diameter (77–106 nm) of the nanorods constituting the flower-like structure are estimated using scanning electron microscopy studies. The band gap of ZnO nanoflowers is estimated as 3.23 eV, the lowering of band gap is attributed to the flower-like surface morphology and microstructure of ZnO. Room temperature photoluminescence spectrum shows a strong UV emission peak at 392 nm, with a suppressed visible emission related to the defect states, indicating the defect free formation of ZnO nanoflowers that can be potentially used for UV light-emitting devices. The suppressed Raman bands at 541 and 583 cm−1 related to defect states in ZnO confirms that the ZnO nanoflowers here obtained have a reduced presence of defects

Boosted UV emission at 349 nm from mesoporous ZnS

Relatively oxygen-free mesoporous cubic ZnS particles were synthesised via a facile solvo-hydrothermal route using a water–acetonitrile combination. Boosted UV emission at 349 nm is observed from the ZnS prepared by the solvo-hydrothermal route. The increased intensity of this UV emission is attributed to activation of whispering gallery modes of almost elliptical microstructures made of porous nanostructures.

Photoluminescence Studies Of Microwave Assisted Synthesized Zno Micro Structures

ZnO micro particles in the range 0.4-0.6 μm were synthesized by microwave irradiation method. The XRD analysis reveals that the sample is in the wurtzite phase with orientation along the (101) plane. SAED pattern of the sample reveals the single crystalline nature of the micro grains. TEM images show the formation of cylindrical shaped ZnO micro structures with hexagonal faces. The optical phonon modes were slightly shifted in the Raman spectrum,attributed to the presence of various crystalline defects and laser induced local heating at the grain boundaries. A broad transmission profile was observed in the FTIR spectrum from 1550-3400 cm-1 which falls in the atmospheric transparency window region. PL spectrum centered at 500 nm with a broad band in the region 420-570 nm comprised of different emission peaks attributed to transition between defect levels. Various emission levels in the sample were expliained with a band diagram

Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique

This work projects photoluminescence (PL) as an alternative technique to estimate the order of resistivity of zinc oxide (ZnO) thin films. ZnO thin films, deposited using chemical spray pyrolysis (CSP) by varying the deposition parameters like solvent, spray rate, pH of precursor, and so forth, have been used for this study. Variation in the deposition conditions has tremendous impact on the luminescence properties as well as resistivity. Two emissions could be recorded for all samples—the near band edge emission (NBE) at 380 nm and the deep level emission (DLE) at ∼500 nm which are competing in nature. It is observed that the ratio of intensities of DLE to NBE ( DLE/ NBE) can be reduced by controlling oxygen incorporation in the sample. - measurements indicate that restricting oxygen incorporation reduces resistivity considerably. Variation of DLE/ NBE and resistivity for samples prepared under different deposition conditions is similar in nature. DLE/ NBE was always less than resistivity by an order for all samples.Thus from PL measurements alone, the order of resistivity of the samples can be estimated.