Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm 2) when operated at a current density of 20 A/cm2. © 2013 AIP Publishing LLC.

Collapse of a composite beam made from ultra high molecular-weight polyethylene fibres

Hot-pressed laminates with a [0/90]48 lay-up, consisting of 83% by volume of ultra high molecular-weight polyethylene (UHMWPE) fibres, and 17% by volume of polyurethane (PU) matrix, were cut into cantilever beams and subjected to transverse end-loading. The collapse mechanisms were observed both visually and by X-ray scans. Short beams deform elastically and collapse plastically in longitudinal shear, with a shear strength comparable to that observed in double notch, interlaminar shear tests. In contrast, long cantilever beams deform in bending and collapse via a plastic hinge at the built-in end of the beam. The plastic hinge is formed by two wedge-shaped microbuckle zones that grow in size and in intensity with increasing hinge rotation. This new mode of microbuckling under macroscopic bending involves both elastic bending and shearing of the plies, and plastic shear of the interface between each ply. The double-wedge pattern contrasts with the more usual parallel-sided plastic microbuckle that occurs in uniaxial compression. Finite element simulations and analytical models give additional insight into the dominant material and geometric parameters that dictate the collapse response of the UHMWPE composite beam in bending. Detailed comparisons between the observed and predicted collapse responses are used in order to construct a constitutive model for laminated UHMWPE composites. © 2013 Elsevier Ltd.

EFFECT OF ELEVATED BICARBONATE CONCENTRATION ON GROWTH, CHLOROPHYLL A FLUORESCENCE AND ULTRA-STRUCTURE OF Microcystis aeruginosa (CYANOBACTERIUM)

The influence of bicarbonate (HCO3-) on Microcystis aeruginosa FACHB 905 was assessed in this study. Growth curves, chlorophyll a fluorescence and ultrastructure were measured at two HCO3- concentrations, 2.3 mM and 12.4 mM. A treatment of sodium chloride (NaCl) was also conducted alongside to establish the influence level of sodium. It was found that upon treatment with elevated HCO3- concentrations of 2.3 mM and 12.4 mM, cell densities were 13% and 27% (respectively) higher than controls. In photosynthetic performance, elevated HCO3- concentration initially stimulated Fv/Fm at the prophase of culture and then subsequently inhibited it. The inhibition of 2.3mM was higher than that of 12.4mM HCO3-. The maximum relative electron transport rate (ETRmax) exhibited inhibition at elevated HCO3- concentrations. DI0/CS was decreased at 2.3 mM and increased at 12.4mM. In the case of both treatments. ABS/CSI TR0/CS, ET0/CS, RC/CS0 and RC/CSm were decreased by elevated HCO3- concentrations, which indicated damage to photosynthetic apparati and an inactivation of a fraction of reaction centers. This point was also proven by ultrastructural photos. High HCO3--exposed cells lost the characteristic photosynthetic membrane arrangement compared with the control and high salinity treated samples. At the 2.3mM concentration of HCO3-. damage to photosynthetic apparati caused decreased photosynthetic activity. These findings suggested that elevated HCO3- concentration stimulated the growth and photosynthesis of M. aeruginosa FACHB 905 in a short time. Exposure to high HCO3- concentrations for a longer period of time will damage photosynthetic apparatus. In addition, the ultrastructure indicated that elevated HCO3--concentration lead to photosynthetic apparati damage. In our experiment, it was observed that the inhibition effect of 2.3mM HCO3- was higher than that of 12.4mM HCO3-. We hypothesized that M. aeruginosa FACHB 905 induced a protective mechanism under high concentrations of HCO3-.

Precision transfer printing of ultra-thin AlInGaN micron-size light-emitting diodes

We report the fabrication of a mechanically-flexible 16×16 array of thin-film, micron-size LEDs emitting at 480 nm. Devices were transfer-printed onto a mechanically-flexible ITO backplane using a modified, high-precision (placement accuracy ±25 nm) assembly system. © 2013 IEEE.

The absorption of sound by helmholtz resonators with and without flow

Helmholtz resonators are commonly used as absorbers of incident acoustic power. Theoretical and experimental investigations have been performed in the four cases of no mean flow, grazing mean flow, bias mean flow and a combination of grazing and bias mean flows. In the absence of a mean flow, the absorption coefficient (deflned as the proportion of incident energy absorbed) is a non-linear function of the acoustic pressure and high incident acoustic pressures are required before the absorption becomes signiflcant. In contrast, when there is a mean flow present, either grazing or bias, the absorption is linear and thus absorption coefficient is independent of the magnitude of the acoustic pressure, and absorption is obtained over a wider range of frequencies. Non-linear effects are only discernible very close to resonance and at very-high amplitude. With grazing mean flow, there is the undesirable effect that sound can be generated over a range of frequencies due to the interaction between the unsteadily shed vorticity waves and the downstream edge of the aperture. This production is not observed when there is a bias flow because here the vorticity is shed all around the rim of the aperture and swept away by the mean flow. When there is both a grazing mean flow and a mean bias flow, we flnd that only a small amount of bias mean flow, compared with grazing mean flow, is required to destroy the production of acoustic energy. © 2002 by the author(s). Published by the American Institute of Aeronautics and Astronautics, Inc.

Ultra-thin silicon nitride microring resonator for biophotonic applications at 970nm wavelength

We experimentally demonstrate an ultra-thin silicon nitride microring resonator operating at wavelength of 970nm that is favorable for large variety of biophotonic applications. Optimization parameters for improved sensitivity and light-mater interaction are presented. © 2010 Optical Society of America.

Silicon-Based Asymmetric Add-Drop Microring Resonators with Ultra-Large Through-Port Extinctions

We theoretically simulate and experimentally demonstrate ultra-large through-port extinctions in silicon-based asymmetrically-coupled add-drop microring resonators (MRs). Through-port responses in an add-drop MR are analyzed by simulations and large extinctions are found when the MR is near-critically coupled. Accurate fabrication techniques are applied in producing a series of 20 mu m-radii add-drop microrings with drop-side gap-widths in slight differences. A through-port extinction of about 42.7 dB is measured in an MR with through-and drop-side gap-width to be respectively 280 nm and 295 nm. The large extinction suggests about a 20.5 dB improvement from the symmetrical add-drop MR of the same size and the through-side gap-width. The experimental results are finally compared with the post-fabrication simulations, which show a gap-width tolerance of > 30 nm for the through-port extinction enhancement.

Study of GaN growth on ultra-thin Si membranes

10 mu m-thick ultra-thin Si (111) membranes for GaN epi-layers growth were successfully fabricated on silicon-on-insulator (SOI) substrate by backside etching the handle Si and buried oxide (BOX) layer. Then 1 mu m-thick GaN layers were deposited on these Si membranes by metal-organic chemical vapor deposition (MOCVD). The crack-free areas of 250 mu m, x 250 mu m were obtained on the GaN layers due to the reduction of thermal stress by using these ultra-thin Si membranes, which was further confirmed by the photoluminescence (PL) spectra and the simulation results from the finite element method calculation by using the software of ANSYS. In this paper, a newly developed approach was demonstrated to utilize micromechanical structures for GaN growth, which would improve the material quality of the epi-layers and facilitate GaN-based micro electro-mechanical system (MEMS) fabrication, especially the pressure sensor, in the future applications. (C) 2008 Elsevier Ltd. All rights reserved.

An ultra-low power CMOS random number generator

This paper proposes an ultra-low power CMOS random number generator (RING), which is based on an oscillator-sampling architecture. The noisy oscillator consists of a dual-drain MOS transistor, a noise generator and a voltage control oscillator. The dual-drain MOS transistor can bring extra-noise to the drain current or the output voltage so that the jitter of the oscillator is much larger than the normal oscillator. The frequency division ratio of the high-frequency sampling oscillator and the noisy oscillator is small. The RNG has been fabricated in a 0.35 mu m CMOS process. It can produce good quality bit streams without any post-processing. The bit rate of this RNG could be as high as 100 kbps. It has a typical ultra-low power dissipation of 0.91 mu W. This novel circuit is a promising unit for low power system and communication applications. (c) 2007 Elsevier Ltd. All rights reserved.

A lattice dynamical treatment for the total potential energy of single-walled carbon nanotubes and its applications: relaxed equilibrium structure, elastic properties, and vibrational modes of ultra-narrow tubes

In this paper, we propose a lattice dynamic treatment for the total potential energy of single-walled carbon nanotubes (SWCNTs) which is, apart from a parameter for the nonlinear effects, extracted from the vibrational energy of the planar graphene sheet. The energetics, elasticity and lattice dynamics are treated in terms of the same set of force constants, independently of the tube structures. Based upon this proposal, we have investigated systematically the relaxed lattice configuration for narrow SWCNTs, the strain energy, the Young's modulus and Poisson ratio, and the lattice vibrational properties with respect to the relaxed equilibrium tubule structure. Our calculated results for various physical quantities are nicely in consistency with existing experimental measurements. In particular, we verified that the relaxation effect makes the bond length longer and the frequencies of various optical vibrational modes softer. Our calculation provides evidence that the Young's modulus of an armchair tube exceeds that of the planar graphene sheet, and that the large diameter limits of the Young's modulus and Poisson ratio are in agreement with the experimental values of graphite; the calculated radial breathing modes for ultra-narrow tubes with diameters ranging between 2 and 5 angstrom coincide with the experimental results and the existing ab initio calculations with satisfaction. For narrow tubes with a diameter of 20 angstrom, the calculated frequencies of optical modes in the tubule's tangential plane, as well as those of radial breathing modes, are also in good agreement with the experimental measurements. In addition, our calculation shows that various physical quantities of relaxed SWCNTs can actually be expanded in terms of the chiral angle defined for the corresponding ideal SWCNTs.

Single-electron multiple-valued memory using ultra-small floating gate metal-oxide-semiconductor field effect transistor

This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconductor field effect transistor (MOS)-type memory with multiple separate control gates and floating gate layer, which consists of nano-crystal grains. The electron can tunnel among the grains (floating gates) and between the floating gate layer and the MOS channel. The memory can realize operations of 'write', 'store' and 'erase' of multiple-valued signals exceeding three values by controlling the single electron tunneling behavior. We use Monte Carlo method to simulate the operation of single-electron four-valued memory. The simulation results show that it can operate well at room temperature.

Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer

InAs quantum dots (QDs) were grown On Ultra-thin In0.15Ga0.85As strained layers by molecular beam epitaxy on GaAs (00 1) substrates. Combining reflection high-energy electron diffraction, atomic force microscopy and transmission electron microscopy, we analyzed the stress field of dislocations in the strained layer/substrate interface. Specially, we revealed the relative position of QDs and dislocations. We found that the difference of the stress field around dislocations is prominent when the strained layer is ultra-thin and the stress field will directly affect the following growth. On the strained layer surface, In0.15Ga0.85As ridges will form at the inclined upside of dislocations. Then, InAs QDs will prefer nucleating on the ridges, there is relatively small stress between InAs and In0.15Ga0.85As. By selecting ultra-thin In0.15Ga0.85As layer (50 nm) and controlling the QD layer at just form QDs, we obtained ordered InAs QDs. (C) 2004 Elsevier B.V. All rights reserved.