Diamond-like carbon coating for optical windows

Hard, low stress diamond-like carbon films have been deposited by plasma assisted chemical vapour deposition technique, The various substrates include soft IR components like ZnS and ZnSe windows, Gaseous precursors such as propene, ethyl alcohol and acetone have been used to synthesize the films to study the nature of precursors in determining the film compatibility with the underlying component (substrate), The residual compressive stresses, the Young's modulus and the adhesion energy of the films have been estimated to be 10(10) dynes/cm(2), 10(10) N/m(2) and 1000 ergs/cm(2) respectively. To alleviate film failure, a study on the effects of additive gases such as hydrogen and the use of buffer layers such as ZrO2, has been undertaken, The diamond-like carbon films produced here are hard (5000 kg/mm(2)), specularly smooth in the wavelength region from 2.5 mu m to 20 mu m, with no microstructural features and have excellent adhesion on ZnS and ZnSe windows. The figure of merit of these films for aero-space applications has been evaluated by subjecting the film-buffer layer ZnS or ZnSe composite stack to wind, dust and rain erosion studies and by establishing the integrity of the specular IR transmittance of the stack upto 16 or 20 mu m as the case may be.

Injection cooling of blunt bodies flying at high Mach numbers

A study of transpiration cooling of blunt bodies such as a hemicylinder is made by solving Navier-Stokes equations. An upwind, implicit time-marching code is developed for this purpose. The study is conducted for both perfect-gas and real-gas (chemical equilibrium) flows. Investigations are carried out for a special wall condition that is referred to as no heat flow into the wall condition. The effects of air injection on wall temperature are analyzed. Analyses are carried out for Mach numbers ranging between 6-10 and Reynolds numbers ranging between 10(6)-10(7). Studies are made for spatially constant as well as spatially varying mass injection rate distributions, White cold air injection reduces the wall temperature substantially, transpiration cooling is relatively less effective when the gas is in chemical equilibrium.

Transport properties, structure, and radiation induced defect studies in amorphous carbon films

Amorphous conducting carbon films are prepared by plasma assisted chemical vapour deposition and their d.c. conductivity (similar to 100 Scm(-1)) is studied from 300K down to 4.2K. The films were irradiated by high energy ion beam(I+13, 170 MeV) with a dose of 10(13) ions/cm(2). As a result a marked decrease in conductivity by two to three orders in magnitude was observed. The structural changes and the defects in the films caused by ion irradiation are studied using photoluminescence, persistent photoconductivity, and ESR spectroscopy.

Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic (beta) and hexagonal (alpha) modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN films grown with silicon nitride buffer layer grown at 800 degrees C when compared to the samples grown in the absence of silicon nitride buffer layer and with silicon nitride buffer layer grown at 600 degrees C. Core-level photoelectron spectroscopy of Si(x)N(y) layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism was observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibited superior rectifying nature with reduced trap concentrations. Lowest ideality factors (similar to 1.5) were observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658867]

Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy

This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) substrates along with photovoltaic characteristics of GaN/p-Si heterojunctions fabricated with substrate nitridation and in absence of substrate nitridation. The high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopic studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN epifilms grown with silicon nitride buffer layer when compared with the sample grown without silicon nitride buffer layer. The low temperature PL shows a free excitonic (FX) emission peak at 3.51 eV at the temperature of 5 K with a very narrow line width of 35 meV. Temperature dependent PL spectra follow the Varshni equation well and peak energy blue shifts by similar to 63 meV from 300 to 5 K. Raman data confirms the strain free nature and reasonably good crystallinity of the films. The GaN/p-Si heterojunctions fabricated without substrate nitridation show a superior photovoltaic performance compared to the devices fabricated in presence of substrate nitridation. The discussions have been carried out on the junction properties. Such single junction devices exhibit a promising fill factor and conversion efficiency of 23.36 and 0.12 %, respectively, under concentrated AM1.5 illumination.

Morphology and electrochemical performance of graphene nanosheet array for Li-ion thin film battery

Highly branched and porous graphene nanosheet synthesized over different substrates as anode for Lithium ion thin film battery. These films synthesized by microwave plasma enhanced chemical vapor deposition at temperature 700 degrees C. Scanning electron microscopy and X-ray photo electron spectroscopy are used to characterize the film surface. It is found that the graphene sheets possess a curled and flower like morphology. Electrochemical performances were evaluated in swezelock type cells versus metallic lithium. A reversible capacity of 520 mAh/g, 450 mAh/g and 637 mAh/g was obtained after 50 cycles when current rate at 23 mu A cm(2) for CuGNS, NiGNS and PtGNS electrodes, respectively. Electrochemical properties of thin film anode were measured at different current rate and gave better cycle life and rate capability. These results indicate that the prepared high quality graphene sheets possess excellent electrochemical performances for lithium storage. (C) 2013 Elsevier Ltd. All rights reserved.

Oxy-steam gasification of biomass for hydrogen rich syngas production using downdraft reactor configuration

The paper focuses on the use of oxygen and steam as the gasification agents in the thermochemical conversion of biomass to produce hydrogen rich syngas, using a downdraft reactor configuration. Performance of the reactor is evaluated for different equivalence ratios (ER), steam to biomass ratios (SBR) and moisture content in the fuel. The results are compared and evaluated with chemical equilibrium analysis and reaction kinetics along with the results available in the literature. Parametric study suggests that, with increase in SBR, hydrogen fraction in the syngas increases but necessitates an increase in the ER to maintain reactor temperature toward stable operating conditions. SBR is varied from 0.75 to 2.7 and ER from 0.18 to 0.3. The peak hydrogen yield is found to be 104g/kg of biomass at SBR of 2.7. Further, significant enhancement in H-2 yield and H-2 to CO ratio is observed at higher SBR (SBR=1.5-2.7) compared with lower range SBR (SBR=0.75-1.5). Experiments were conducted using wet wood chips to induce moisture into the reacting system and compare the performance with dry wood with steam. The results clearly indicate the both hydrogen generation and the gasification efficiency ((g)) are better in the latter case. With the increase in SBR, gasification efficiency ((g)) and lower heating value (LHV) tend to reduce. Gasification efficiency of 85.8% is reported with LHV of 8.9MJNm(-3) at SBR of 0.75 compared with 69.5% efficiency at SBR of 2.5 and lower LHV of 7.4 at MJNm(-3) at SBR of 2.7. These are argued on the basis of the energy required for steam generation and the extent of steam consumption during the reaction, which translates subsequently in the LHV of syngas. From the analysis of the results, it is evident that reaction kinetics plays a crucial role in the conversion process. The study also presents the importance of reaction kinetics, which controls the overall performance related to efficiency, H-2 yield, H-2 to CO fraction and LHV of syngas, and their dependence on the process parameters SBR and ER. Copyright (c) 2013 John Wiley & Sons, Ltd.

Correlating defect induced ferromagnetism and gas sensing properties of undoped tin oxide sensors

A correlation between gas sensing properties and defect induced Room Temperature Ferromagnetism (RTFM) is demonstrated in non-stoichiometric SnO2 prepared by solution combustion method. The presence of oxygen vacancies (V-O), confirmed by RTFM is identified as the primary factor for enhanced gas sensing effect. The as-prepared SnO2 shows high saturation magnetization of similar to 0.018 emu/g as compared to similar to 0.002 and similar to 0.0005 emu/g in annealed samples and SnO2 prepared by precipitation respectively. The SnO2 prepared by precipitation which is an equilibrium method of synthesis shows lesser defects compared to the combustion product and hence exhibits lesser sensitivity in spite of smaller crystallite size. The study utilizes RTFM as a potential tool to characterize metal oxide gas sensors and recognizes the significance of oxygen vacancies in sensing mechanism over the microstructure. (C) 2014 AIP Publishing LLC.

Stress Engineering using Si3N4 for stiction free release of SOI beams

We report on the effect of thin silicon nitride (Si3N4) induced tensile stress on the structural release of 200nm thick SOI beam, in the surface micro-machining process. A thin (20nm / 100nm) LPCVD grown Si3N4 is shown to significantly enhance the yield of released beam in wet release technique. This is especially prominent with increase in beam length, where the beams have higher tendency for stiction. We attribute this yield enhancement to the nitride induced tensile stress, as verified by buckling tendency and resonance frequency data obtained from optical profilometry and laser doppler vibrometry.

Numerical Simulation of Nox Formation in Coal Combustion with Inlet Natural Gas Burning

A full two-fluid model of reacting gas-particle flows and coal combustion is used to simulate coal combustion with and without inlet natural gas added in the inlet. The simulation results for the case without natural gas burning is in fair agreement with the experimental results reported in references. The simulation results of different natural gas adding positions indicate that the natural gas burning can form lean oxygen combustion enviroment at the combustor inlet region and the NOz concentration is reduced. The same result can be obtained from chemical equilibrium analysis.

Integrating vertically aligned carbon nanotubes on micromechanical structures

The integration of high yield, uniform and preferential growth of vertically aligned carbon nanotubes (VACNT) on low stress micromechanical structures was analyzed. A combination of electron-beam crosslinked surface micromachining and direct current plasma enhanced chemical vapor deposition of electric field aligned carbon nanotubes was used for the analysis. The selective placement of high yield and uniform VACNTs on a partially suspended Ni/SiO2/Ti microstructure was also demonstrated.

Behaviour of Gaseous Chlorine and Alkali Metals During Biomass Thermal Utilisation

The behaviour of gaseous chlorine and alkali metals of three sorts of biomass (Danish straw, Swedish wood, and sewage sludge) in combustion or gasification is investigated by the chemical equilibrium calculating tool. The ranges of temperature, air-to-fuel ratio, and pressure are varied widely in the calculations (T=400-1800 K, gimel=0-1.8, and P=0.1-2.0 MPa). Results show that the air excess coefficient only has less significant influence on the release of gaseous chlorine and potassium or sodium during combustion. However, in biomass gasification, the influence of the air excess coefficient is very significant. Increasing air excess coefficient enhances the release of HCl(g), KOH(g), or NaOH(g) as well as it reduces the formation of KCl(g), NaCl(g), K(g), or Na(g). In biomass combustion or straw and sludge gasification, increasing pressure enhances the release of HCl(g) and reduces the amount of KCI(g), NaCl(g), KCI(g), or NaOH(g) at high temperatures. However, during wood gasification, the pressure enhances the formation of KOH(g) and KCI(g) and reduces the release of K(g) and HCl(g) at high temperatures. During wood and sewage sludge pyrolysis, nitrogen addition enhances the formation of KCN(g) and NaCN(g) and reduces the release of K(g) and Na(g). Kaolin addition in straw combustion may enhance the formation of potassium aluminosilicate in ash and significantly reduces the release of KCl(g) and KOH(g) and increases the formation of HCl(g).

Three-dimensional carbon nanowall structures

The authors report the growth of carbon nanowalls in freestanding, three-dimensional aggregates by microwave plasma-enhanced chemical vapor deposition. Carbon nanowalls extrude from plasma sites into three-dimensional space. The growth is catalyst-free and not limited by nucleating surfaces. The growth mechanism is discussed and compared with similar carbon nanomaterials. High surface area of as-grown carbon nanowalls indicates a potential for electrochemical applications. Field emission measurements show a low field turn-on and long-term stability. The results establish a scalable production method and possible applications using field emission or high surface area. © 2007 American Institute of Physics.

Hydrogen content estimation of hydrogenated amorphous carbon by visible Raman spectroscopy

In the present study, we report the hydrogen content estimation of the hydrogenated amorphous carbon (a-C:H) films using visible Raman spectroscopy in a fast and nondestructive way. Hydrogenated diamondlike carbon films were deposited by the plasma enhanced chemical vapor deposition, plasma beam source, and integrated distributed electron cyclotron resonance techniques. Methane and acetylene were used as source gases resulting in different hydrogen content and sp2/sp3 fraction. Ultraviolet-visible (UV-Vis) spectroscopic ellipsometry (1.5-5 eV) as well as UV-Vis spectroscopy were provided with the optical band gap (Tauc gap). The sp2/sp3 fraction and the hydrogen content were independently estimated by electron energy loss spectroscopy and elastic recoil detection analysis-Rutherford back scattering, respectively. The Raman spectra that were acquired in the visible region using the 488 nm line shows the superposition of Raman features on a photoluminescence (PL) background. The direct relationship of the sp2 content and the optical band gap has been confirmed. The difference in the PL background for samples of the same optical band gap (sp2 content) and different hydrogen content was demonstrated and an empirical relationship between the visible Raman spectra PL background slope and the corresponding hydrogen content was extracted. © 2004 American Institute of Physics.

Lateral field emitters fabricated using carbon nanotubes

We report on the fabrication of lateral emitters using carbon nanotubes (CNTs) grown via plasma enhanced chemical vapour deposition (PECVD). Carbon nanotubes are dispersed randomly onto a substrate, mapped, contacted with metal, and by etching the substrate, a suspended lateral emitter structure is formed. Field emission measurements from the lateral emitters show a turn-on voltage as low as 12 V. The emission characteristics showed good fits to the Fowler-Nordheim (FN) theory indicating that conventional field emission was indeed observed from these devices. © 2003 Elsevier Science B.V. All rights reserved.