Synthesis, evolved gas analysis (EGA) during pyrolysis and spectroscopic study of light lanthanide nicotinate in solid state

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Solid-state 2-methoxybenzoates of light trivalent lanthanides : SSSynthesis, characterization and thermal behaviour

Solid-state LnL(3) compounds, where L is 2-metboxybenzoate and Ln is light trivalent lanthanides, have been synthesized. Thermogravimetry (TG), differential scanning calorimetty (DSC), X-ray powder diffractometry, infrared spectroscopy and elementary analysis were used to characterize and to study the thermal behaviour of these compounds. The results led to information on the composition, dehydration, thermal stability and thermal decomposition of the isolated compounds. on heating these complexes decompose in three (Ce, Pr) or five (La, Nd, Sm) steps with the formation of the respective oxide: CeO2, Pr6O11 and Ln(2)O(3) (Ln=La, Nd, Sm) as final residues. The theoretical and experimental spectroscopic study suggests predominantly the ionic bond between the ligand and metallic center.

Efeitos das formulações nanoestruturadas de doxorrubicina e cisplatina em dispersão de óxido de grafeno reduzido no tratamento da progressão do câncer de bexiga Não-músculo invasivo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Structural study of copper oxide supported on a ceria-modified titania catalyst system

A structural study of CuO supported on a CeO2-TiO2 system was undertaken using X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) techniques. The results of XRD revealed the presence of only two phases, TiO2 anatase and CeO2 cerianite. A trend towards smaller TiO2 crystallites was observed when cerium content increased. When the amount of cerium increased, Ti K-edge XANES analysis showed an increasing distortion of Ti sites. The results of Ce LIII-edge EXAFS showed that Ce atoms are coordinated by eight oxygen atoms at 2.32 Å. For the sample containing a small amount of cerium, the EXAFS analysis indicated that the local structure around Ce atoms was highly distorted. The catalysts presented quite different Cu K-edge XANES spectra compared to the spectra of the CuO and Cu2O reference compounds. The Cu-O mean bond length was close to that of the CuO and the Cu atoms in the catalysts are surrounded by approximately four oxygen atoms in their first shell. Copper supported on the ceria-modified titania support catalysts displayed a better performance in the methanol dehydrogenation when compared to copper supported only on titania or on ceria. © 2002 Plenum Publishing Corporation.

Métodos Semi-Empíricos: princípios básicos e aplicações

Pós-graduação em Física - IGCE

Simulação atomística de sistema em nanoescala

Pós-graduação em Física - IGCE

Efeitos das correlações inter-átomos adsorvidos na densidade de estados do grafeno

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Simulação da nanoestruturação de nanofolhas de óxido de grafeno reduzido através de dinâmica molecular

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Anomalias e números fermiônicos induzidos em grafeno com deformações

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Capturando estados ligados no contínuo de átomos fantasmas no grafeno

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Desenvolvimento de sensor baseado em polímeros molecularmente impressos para determinação de álcoois superiores em óleo fúsel

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Vibrações em sistemas bidimensionais

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Potenciais reativos e simulação de sistemas nanoscópicos

Pós-graduação em Física - IGCE

Growth and Characterization of Silicon Carbide Thin Films Using a Nontraditional Hollow Cathode Sputtering Technique

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.

Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system

The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an unconventional behavior, different from the classical N-shaped dependence typical for bipolar systems with electron-hole asymmetry. The quantum features of magnetotransport are explained by means of numerical calculation of the Landau level spectrum based on the Kane Hamiltonian. The origin of the quantum Hall plateau sigma(xy) = 0 near the charge neutrality point is attributed to special features of Landau quantization in our system.