An evaluation of back-calculation methodology using simulated otolith data

I simulated somatic growth and accompanying otolith growth using an individual-based bioenergetics model in order to examine the performance of several back-calculation methods. Four shapes of otolith radius-total length relations (OR-TL) were simulated. Ten different back-calculation equations, two different regression models of radius length, and two schemes of annulus selection were examined for a total of 20 different methods to estimate size at age from simulated data sets of length and annulus measurements. The accuracy of each of the twenty methods was evaluated by comparing the back-calculated length-at-age and the true length-at-age. The best back-calculation technique was directly related to how well the OR-TL model fitted. When the OR-TL was sigmoid shaped and all annuli were used, employing a least squares linear regression coupled with a log-transformed Lee back-calculation equation (y-intercept corrected) resulted in the least error; when only the last annulus was used, employing a direct proportionality back-calculation equation resulted in the least error. When the OR-TL was linear, employing a functional regression coupled with the Lee back-calculation equation resulted in the least error when all annuli were used, and also when only the last annulus was used. If the OR-TL was exponentially shaped, direct substitution into the fitted quadratic equation resulted in the least error when all annuli were used, and when only the last annulus was used. Finally, an asymptotically shaped OR-TL was best modeled by the individually corrected Weibull cumulative distribution function when all annuli were used, and when only the last annulus was used.

Optimal H2 order-one reduction by solving eigenproblems for polynomial equations

A method is given for solving an optimal H2 approximation problem for SISO linear time-invariant stable systems. The method, based on constructive algebra, guarantees that the global optimum is found; it does not involve any gradient-based search, and hence avoids the usual problems of local minima. We examine mostly the case when the model order is reduced by one, and when the original system has distinct poles. This case exhibits special structure which allows us to provide a complete solution. The problem is converted into linear algebra by exhibiting a finite-dimensional basis for a certain space, and can then be solved by eigenvalue calculations, following the methods developed by Stetter and Moeller. The use of Buchberger's algorithm is avoided by writing the first-order optimality conditions in a special form, from which a Groebner basis is immediately available. Compared with our previous work the method presented here has much smaller time and memory requirements, and can therefore be applied to systems of significantly higher McMillan degree. In addition, some hypotheses which were required in the previous work have been removed. Some examples are included.

Fast and compact simulation models for a variety of FET nano devices by the CMOS EKV equations

In this paper we explore the possibility of using the equations of a well known compact model for CMOS transistors as a parameterized compact model for a variety of FET based nano-technology devices. This can turn out to be a practical preliminary solution for system level architectural researchers, who could simulate behaviourally large scale systems, while more physically based models become available for each new device. We have used a four parameter version of the EKV model equations and verified that fitting errors are similar to those when using them for standard CMOS FET transistors. The model has been used for fitting measured data from three types of FET nano-technology devices obeying different physics, for different fabrication steps, and under different programming conditions. © 2009 IEEE NANO Organizers.