Electrical properties of some single crystal dodecaborides /|nby Jyoti Burte. -- 260 St. Catharines [Ont. : s. n.],

PreVi011.3 ':i or~ : indicat e('. tk~t ho t~)rE's sed ~-Al B 12 1i~2, ~' a semiconductor. r:Toreove r , the s i mpl.(~ electronic t heory also indi cates that ~ -AIB1 2 should be a semico nductor, since thf're is one nonbonding e 'Le ctrofl per AlB12- uni t. JPor these reasons, we decided to measure t he electrical n ropert i ~ s of ~ -AlB1 2 single crystal s . Singl e crystal s of¥- AIB 12 ab ou t 1 x 1 r1n1 . size were grown from a copper mel t at 12500 C. The melt technique coupled. 1,vi th slow cooling vilas used because of i ts advantages such as : siTYInle set- up of the expe rimon t ; only e ;l.sil y available c hemi cals are required and it i s a c omparatively strair::bt forvvard y,le t hod still yielding crystal s big enouGh for OtU' purpose . Copper rms used as a solvent , i nst8ad of previOl.wly used aluminum , because it allows c.l.'ystal growth at hig he r t emneratures. HovlGver, the cry s tals of ] -AlB12 shm'red very hi gh res i s t ance a t r oom temperature . From our neasureJ'lents we conclude that the r esistivity of j3- Al B12 is, at least, given as ~ = 4. x 107 oblD .em •• Those results are inc ons i s t ent wi 'uh the ones .. reported by IIiss Khin fo r bot- pressed j3-AlB12 g i ven a s = 7600 ohm . em . or I e s s . ' Since tbe hot pressing was done at about 800 - ' 9000C i n ~ rap hi te moul ds 1,7i th 97% AlB12- p oVJder, vie thi nk there is pas s ib i 1 i ty th a.t lower borides or borot] carbide are , being formed, ':.Jhich are k11 own to be good semiconductors . v7e tried to ro-pe r-AlB12 by addi'J,'?: agents s uch as l:Ig , IG.-InO 4. ' HgS04 , KI12PO 4·' etc. to t he melt .. However , all these re age 11 t eel either reduced the yield and size of t lJe crystals or r;ave crystals of high r esis'can ce again. We think tba t molten copper keeps t he i mpurities off . There is also a pos s i bil i ty t hc:!,t these doping agents get oxidi~::;ed at '1 250°C • Hence, we co ~ clud e that J -AIB12 has v~ ry high r es i stance at r oom temperature . This was a l s o C011 - fi rmed by checki ng the siYlgle and. polycrystals of .~-AIB12 from Norton Co., Ontario and Cooper Nletallurgical Association. Boron carbide has been reported to be a semiconductor with ~ - 0.3 to 0.8 ohm . cm. for hotpres sed s araples. Boron carbide b e inq: struct urally related to ¥-AIB12 , we de cided to study the electrical prone rties of it~ Single crystals. These crystals were cut from a Single melt grovvn crystal a t Norton Co., Ontario. The resistivity of th," se crystal s was measured by the Van der Pam-v' s ~ nethod, which \vas very c onvenient fo r our crystal sha-pp.s. Some of the crystals showed resistivity ~ == 0.50 ob,Tn.cr] . i n agreement with the previously reported results . However , a few crystals showed lower resistivity e.g . 0 .13 and 0.20 ohm.cra • • The Hall mobility could .not be measured and th8reiore i s lower than 0 .16 em 2 v - 1 sec -1 • This is in agreement \vith t he re1)orted Hall mobility for pyrolytic boron . _ 2 -1 -1 carbide as 0.13 cm v sec • We also studied the orientation of the boron carbide crystals by the Jjaue-method. The inclination of c-axis with res pect to x-ray be81Il was det ermined . This was found to be 100 t o 20° f or normal resistivity sarnples (0.5 ohm . cm.) and 27 - 30° for t he lower r esistivity samples (0.1 ~5 to 0.20 ohm.cm .). This indica tes the possibility that th.e r es if.1tivity of B13C3 i s orientation dependent.

Far-infrared optical properties of the heavy fermion superconductor UB[E13]

Temperature dependent resistivity, p, magnetic susceptibility, X, and far-infrared reflectance measurements were made on the low Tc superconductor UBe13. Two variants of UBe13 have been proposed, named 'L'- (for low Tc ) and 'H'-type (for high Tc ). Low temperature resistivity measurements confirmed that our sample was of H-type and that the transition temperature was at 0.9 K. This was further confirmed with the observation of this transition in the AC-susceptibility. Low temperature reflectance measurements showed a decrease in the reflectivity as the temperature is lowered from 300 to 10 K, which is in qualitative agreement with the increasing resistivity in this temperature range as temperature is lowered. No dramatic change in the reflectivity was observed between 10 and 0.75 K. A further decrease of the reflectance was observed for the temperature of 0.5 K. The calculated optical conductivity shows a broad minimum near 80 cm-1 below 45 K. Above 45 K the conductivity is relatively featureless. As the temperature is lowered, the optical conductivity decreases. The frequency dependent scattering rate was found to be flat for temperatures between 300 and 45 K. The development of a peak, at around 70 cm-1 was found for temperatures of 45 K and below. This peak has been associated with the energy at which the transition to a coherent state occurs from single impurity scattering in other heavy fermion systems. The frequency dependent mass enhancement coefficient was found to increase at low frequencies as the frequency decreases. Its' magnitude as frequency approaches zero also increased as the temperature decreased.

Far infrared spectroscopy of heavy fermion superconductor CeCoIn5

The optical response to far infrared radiation has been measured on a mosaic of heavy fermion CeColnssingle crystals. The superconducting transition temperature of the crystals has been determined by van der Pauw resistivity and ac-susceptibility measurements as Tc = 2.3 K. The optical measurements were taken above and below the transition temperature using a 3He cryostat and step and integrate Martin-Puplett type polarizing interferometer. The absolute reflectance of the heavy fermion CeColns in the superconducting state in range (0, 100)cm-1 was calculated from the measured thermal reflectance, using the normal state data of Singley et al and a low frequency extrapolation for a metallic material in the Hagen-Rubens regime. By means of Kramers-Kronig analysis the absolute reflectance was used to calculate the optical conductivity of the sample. The real part of the calculated complex conductivity 0-(w) ofCeColns indicates a possible opening of an energy gap close to 50 em-I.

Set-up and evaluation of a mid-infrared reflectometer and investigation of the optical properties of doped tin telluride

A system comprised of a Bomem interferometer and a LT3-110 Heli-Tran cryostat was set up to measure the reflectance of materials in the mid-infrared spectral region. Several tests were conducted to ensure the consistency and reliability of the system. Silicon and Chromium, two materials with well known optical properties were measured to test the accuracy of the system, and the results were found to be in good agreement with the literature. Reflectance measurements on pure SnTe and several Pb and Mn-doped alloys were carried out. These materials were chosen because they exhibit a strong plasma edge in the mid infrared region. The optical conductivity and several related optical parameters were calculated from the measured reflectance. Very low temperature measurements were carried out in the far-infrared on Sn9SMn2Te, and the results are indicative of a spin glass phase at 0.8 K. Resistivity measurements were made at room temperature. The resistivity values were found, as expected, to decrease with increasing carrier concentration and to increase with increasing manganese concentration.

Some electrical properties of semi-conductor crystals / |nPhyu Phyu Khin. -- 260 St. Catharines, Ont. : [s. n.],

SiC and AtB 12 have been prepared and their resistivities and Hall voltages measured. The resistivities and Hall voltages were measured by the Van der Pauw's method, using spring loaded tungsten contacts. In this method, the major requirement is to have samples of plane parallel surfaces of arbitrary shape with four small contacts at the circumference. Similar measurements were made with a number of SiC crystals obtained from the Norton Research Corporation (Canada)-Ltd., Carolina Aluminum Co., Exolon Co. and Carborundum Co. It was found that resistivity, carrier concentration and mobility of ions depend on the type of impurity. AtB 12 was prepared from the melt containing At and B in the ratio of 4:1. They formed amber-colour pseudo tetragonal crystals. As the crystals obtained were small for electrical measurements, hot pressed lumps have been used to measure their resistivity.

Specific heat of UPdâ Siâ

The specific heat of single-crystal U Pd2 Si2 has been studied using both the step heating and continious heating methods for the temperature range 2 to 250 K. Successive phase transitions at Tl = 136I< and T2 = 108I< are reported, which are consistent with current publications. The transition at 40K, which was previously reported, has not been detected. Recent published elastic neutron scattering data, magnetic susceptibility and resistivity results suggest that U Pd2 Si2 may be a heavy fermion compound, however, the electronic specific heat coefficient I (= 18.97 ;~), obtained from the specific heat Cv measurements, is smaller than that of the conventional heavy fermion system. The Debye temperature of U Pd2Si2 is found to be 116.55K. The possibility is discussed that the maximum in CIT in the low-temperature range 2 to 4K corresponds to Schottky anomaly induced by localized magnetic impurities .

Preparation of SrMgx-Ru1-xO3 thin films by pulsed laser deposition /

SrMg^Rui-iOa thin films were made by using pulsed laser deposition on SrTiOa (100) substrates in either O2 or Ar atmosphere. The thin films were characterized by x-ray diffraction, energy dispersive x-ray microanalysis, dc resistivity measurement, and dc magnetization measurement. The effect of Mg doping was observed. As soon as the amount of Mg increased in SrMg-cRui-iOa thin films, the magnetization decreased, and the resistivity increased. It had little effect on the Curie temperature (transition temperature). The magnetization states of SrMgiRui-iOa thin films, for x < 0.15, are similar to SrRuOs films. X-ray diffraction results for SrMga-Rui-iOa thin films made in oxygen showed that the films are epitaxial. The thin films could not be well made in Ar atmosphere during laser ablation as there was no clear peak of SrMg^Rui-iOa in x-ray diffraction results. Substrate temperatures had an effect on the resistivity of the films. The residual resistivity ratios were increased by increasing substrate temperature. It was observed that the thickness of thin films are another factor for film quality: Thin films were epitaxial, but thicker films were not epitaxial.

Far infrared spectroscopy of heavy fermion superconductor CeCoIn5 /

The optical response to far infrared radiation has been measured on a mosaic of heavy fermion CeCoIns single crystals. The superconducting transition temperature of the crystals has been determined by van der Pauw resistivity and ac-susceptibility measurements as Tc = 2.3 K. The optical measurements were taken above and below the transition temperature using a ^He cryostat and step and integrate Martin-Puplett type polarizing interferometer. The absolute reflectance of the heavy fermion CeCoIns in the superconducting state in range (0, 100)cm~^ was calculated from the measured thermal reflectance, using the normal state data of Singley et al and a low frequency extrapolation for a metallic material in the Hagen-Rubens regime. By means of Kramers-Kronig analysis the absolute reflectance was used to calculate the optical conductivity of the sample. The real part of the calculated complex conductivity a{u)) of CeCoIns indicates a possible opening of an energy gap close to 50 cm~^.

Electronic, magnetic and thermal properties of Pb₂₋x AxCrO₅ (A = K or La)

Lead chromium oxide is a photoconductive dielectric material tha t has great potential of being used as a room temperature photodetector. In this research, we made ceramic pellets of this compound as well as potassium doped compound Pb2-xKxCr05, where x=O, 0.05, 0.125. We also investigate the properties of the lanthanum doped sample whose chemical formula is Pb1.85Lao.15Cr05' The electronic, magnetic and thermal properties of these materials have been studied. Magnetization measurements of the Pb2Cr05 sample indicate a transition at about 310 K, while for the lanthanum doped sample the transition temperature is at about 295 K indicating a paramagnetic behavior. However, the potassium doped samples are showing the transition from paramagnetic state to diamagnetic state at different temperatures for different amounts of potassium atoms present in the sample. We have studied resistivity as a function of temperature in different gas environments from 300 K to 900 K. The resistivity measurement of the parent sample indicates a conducting to insulating transition at about 300 K and upon increasing the temperature further, above 450 K the sample becomes an ionic conductor. As temperature increases a decrease in resistance is observed in the lanthanum/potassium doped samples. Using Differential Scanning Calorimetry experiment an endothermic peak is observed for the Pb2Cr05 and lanthanum/potassium doped samples at about 285 K.

Crystallinity, Magnetic and Electrical Properties of Bi doped LaVO3

We report the results of crystal structure, magnetization and resistivity measurements of Bi doped LaVO3. X-ray diffraction (XRD) shows that if doping Bi in the La site is less than ten percent, the crystal structure of La1-xBixVO3 remains unchanged and its symmetry is orthorhombic. However, for higher Bi doping (>10%) composite compounds are found where the XRD patterns are characterized by two phases: LaVO3+V2O3. Energy-dispersive analysis of the x-ray spectroscopy (EDAX) results are used to find a proper atomic percentage of all samples. The temperature dependence of the mass magnetization of pure and single phase doped samples have transition temperatures from paramagnetic to antiferromagnetic region at TN=140 K. This measurement for bi-phasic samples indicates two transition temperatures, at TN=140 K (LaVO3) and TN=170 K (V2O3). The temperature dependence of resistivity reveals semiconducting behavior for all samples. Activation energy values for pure and doped samples are extracted by fitting resistivity versus temperature data in the framework of thermal activation process.

Crystal Growth and Characterization of Li0.9Mo6O17

Purple bronze Li0.9Mo6O17 has attracted researchers for its low dimensionality and corresponding properties. Although it has been studied for nearly two decades, there are still some unsolved puzzles with this unique material. Single crystals of Li0.9Mo6O17 were grown using the temperature gradient flux technique in this research. The crystal growth was optimized by experimenting different conditions and good quality crystals were obtained. X-ray diffraction results have confirmed the right phase of the crystals. Resistivity measurements and magnetic susceptibility measurements were carried out, and anomalous electronic behaviors were found. All of the samples showed the metal-insulator transition near 20K, followed by behavior that differs from sample to sample: either superconducting, metallic or insulating behavior was observed below 2K. Li0.9Mo6O17 was considered as a quasi-one-dimensional crystal and also a superconducting crystal, which implies a dimensional crossover may occur at the metal-insulator transition. A two-band scenario of the Luttinger liquid model was used to fit the resistivity data and excellent results were achieved, suggesting that the Luttinger theory is a very good candidate for the explanation of the anomalous behavior of Li0.9Mo6O17. In addition, the susceptibility measurements showed Curie paramagnetism and some temperature independent paramagnetism at low temperature. The absence of any anomalous magnetic feature near 20K where the resistivity upturn takes place, suggests that a charge density wave mechanism, which has been proposed by some researchers, is not responsible for the unique properties of Li0.9Mo6O17.

Remodelage du muscle lisse péribronchique dans l’inflammation respiratoire chronique

Le souffle chez les chevaux et l’asthme chez l’humain sont des maladies respiratoires qui partagent plusieurs caractéristiques, notamment des épisodes de bronchospasme et de détresse respiratoire dus à une inflammation pulmonaire inappropriée en réponse à une inhalation de substances antigéniques. Les manifestations cliniques incluent des efforts respiratoires augmentés, des sifflements et de la toux. Au niveau des voies respiratoires, on observe une augmentation du muscle lisse péribronchique, une fibrose sous épithéliale, une métaplasie/hyperplasie épithéliale et du mucus en quantité augmentée. L’augmentation du muscle lisse est particulièrement importante car elle n’affecte pas seulement le calibre basal des voies respiratoires, mais elle accentue l’obstruction respiratoire lors de bronchoconstriction. Ces changements sont regroupés sous le terme de « remodelage » et sont associés à un déclin accéléré de la fonction respiratoire chez les patients asthmatiques. Alors que les traitements actuels contrôlent efficacement le bronchospasme et relativement bien l’inflammation, leurs effets sur le remodelage sont mal connus. Dans le cadre de thèse, la réversibilité du remodelage musculaire péribronchique a été investiguée chez des chevaux atteints du souffle dans deux études longitudinales. Ces études, faites principalement sur du tissu pulmonaire prélevé par thoracoscopie, sont difficilement réalisables chez l’humain pour des raisons éthiques, ou chez d’autres animaux, car ceux-ci présentent rarement une inflammation de type asthmatique de façon spontanée. Les résultats démontrent que les chevaux atteints du souffle ont approximativement deux fois plus de muscle péribronchique que les chevaux sains d’âge similaire gardés dans les mêmes conditions, et que la prolifération des myocytes contribue à cette augmentation. Ils démontrent aussi qu’une stimulation antigénique relativement brève chez des chevaux atteints du souffle depuis plusieurs années n’accentue pas le remodelage, ce qui suggère que l’augmentation du muscle lisse atteint un plateau. Nous avons également montré que le remodelage du muscle lisse chez des chevaux adultes est partiellement réversible et que cette réversibilité peut être accélérée par l’administration de corticostéroïdes par inhalation. Il semble toutefois qu’une portion du remodelage chronique est irréversible puisque les corticostéroïdes ont accéléré la diminution du muscle mais sans toutefois mener à une amélioration plus marquée au terme de l’étude qu’avec une modification environnementale stricte. La diminution de trente pourcent observée sur un an paraît modeste mais elle démontre clairement, et pour une première fois, que le remodelage du muscle lisse présent chez des chevaux adultes malades depuis plusieurs années est au moins partiellement réversible.

Synthesis of polyelectrolyte brushes on silica-based substrates through surface-initiated polymerization : brush characterization and responsiveness to variation in pH and ionic strength

Les brosses de polyélectrolytes font l’objet d’une attention particulière pour de nombreuses applications car elles présentent la capacité de changer de conformation et, par conséquent, de propriétés de surface en réponse aux conditions environnementales appliquées. Le contrôle des principaux paramètres de ces brosses telles que l'épaisseur, la composition et l'architecture macromoléculaire, est essentiel pour obtenir des polymères greffés bien définis. Ceci est possible avec la Polymérisation Radicalaire par Transfert d’Atomes - Initiée à partir de la Surface (PRTA-IS), qui permet la synthèse de brosses polymériques de manière contrôlée à partir d’une couche d'amorceurs immobilisés de manière covalente sur une surface. Le premier exemple d’une synthèse directe de brosses de poly(acide acrylique) (PAA) par polymérisation radicalaire dans l’eau a été démontré. Par greffage d’un marqueur fluorescent aux brosses de PAA et via l’utilisation de la microscopie de fluorescence par réflexion totale interne, le dégreffage du PAA en temps réel a pu être investigué. Des conditions environnementales de pH ≥ 9,5 en présence de sel, se sont avérées critiques pour la stabilité de la liaison substrat-amorceur, conduisant au dégreffage du polymère. Afin de protéger de l’hydrolyse cette liaison substrat-amorceur sensible et prévenir le dégreffage non souhaité du polymère, un espaceur hydrophobique de polystyrène (PS) a été inséré entre l'amorceur et le bloc de PAA stimuli-répondant. Les brosses de PS-PAA obtenues étaient stables pour des conditions extrêmes de pH et de force ionique. La réponse de ces brosses de copolymère bloc a été étudiée in situ par ellipsométrie, et le changement réversible de conformation collapsée à étirée, induit par les variations de pH a été démontré. De plus, des différences de conformation provenant des interactions du bloc de PAA avec des ions métalliques de valence variable ont été obtenues. Le copolymère bloc étudié semble donc prometteur pour la conception de matériaux répondant rapidement a divers stimuli. Par la suite, il a été démontré qu’un acide phosphonique pouvait être employé en tant qu’ amorceur PRTA-IS comme alternative aux organosilanes. Cet amorceur phosphonate a été greffé pour la première fois avec succès sur des substrats de silice et une PRTA-IS en milieux aqueux a permis la synthèse de brosses de PAA et de poly(sulfopropyl méthacrylate). La résistance accrue à l’hydrolyse de la liaison Sisubstrat-O- Pamorceur a été confirmée pour une large gamme de pH 7,5 à 10,5 et a permis l’étude des propriétés de friction des brosses de PAA sous différentes conditions expérimentales par mesure de forces de surface. Malgré la stabilité des brosses de PAA à haute charge appliquée, les études des propriétés de friction ne révèlent pas de changement significatif du coefficient de friction en fonction du pH et de la force ionique.

An Integrated Hydro geological Study of the Muvattupuzha River Basin, Kerala, India

The present investigation on the Muvattupuzha river basin is an integrated approach based on hydrogeological, geophysical, hydrogeochemical parameters and the results are interpreted using satellite data. GIS also been used to combine the various spatial and non-spatial data. The salient finding of the present study are accounted below to provide a holistic picture on the groundwaters of the Muvattupuzha river basin. In the Muvattupuzha river basin the groundwaters are drawn from the weathered and fractured zones. The groundwater level fluctuations of the basin from 1992 to 2001 reveal that the water level varies between a minimum of 0.003 m and a maximum of 3.45 m. The groundwater fluctuation is affected by rainfall. Various aquifer parameters like transmissivity, storage coefficient, optimum yield, time for full recovery and specific capacity indices are analyzed. The depth to the bedrock of the basin varies widely from 1.5 to 17 mbgl. A ground water prospective map of phreatic aquifer has been prepared based on thickness of the weathered zone and low resistivity values (<500 ohm-m) and accordingly the basin is classified in three phreatic potential zones as good, moderate and poor. The groundwater of the Muvattupuzha river basin, the pH value ranges from 5.5 to 8.1, in acidic nature. Hydrochemical facies diagram reveals that most of the samples in both the seasons fall in mixing and dissolution facies and a few in static and dynamic natures. Further study is needed on impact of dykes on the occurrence and movement of groundwater, impact of seapages from irrigation canals on the groundwater quality and resources of this basin, and influence of inter-basin transfer of surface water on groundwater.

Spray Pyrolysed Zinc Oxide Thin Films : Effects of Doping and Ion Beam Irradiation

In recent years scientists have made rapid and significant advances in the field of semiconductor physics. One of the most important fields of current interest in materials science is the fundamental aspects and applications of conducting transparent oxide thin films (TCO). The characteristic properties of such coatings are low electrical resistivity and high transparency in the visible region. The first semitransparent and electrically conducting CdO film was reported as early as in 1907 [1]. Though early work on these films was performed out of purely scientific interest, substantial technological advances in such films were made after 1940. The technological interest in the study of transparent semiconducting films was generated mainly due to the potential applications of these materials both in industry and research. Such films demonstrated their utility as transparent electrical heaters for windscreens in the aircraft industry. However, during the last decade, these conducting transparent films have been widely used in a variety of other applications such as gas sensors [2], solar cells [3], heat reflectors [4], light emitting devices [5] and laser damage resistant coatings in high power laser technology [6]. Just a few materials dominate the current TCO industry and the two dominant markets for TCO’s are in architectural applications and flat panel displays. The architectural use of TCO is for energy efficient windows. Fluorine doped tin oxide (FTO), deposited using a pyrolysis process is the TCO usually finds maximum application. SnO2 also finds application ad coatings for windows, which are efficient in preventing radiative heat loss, due to low emissivity (0.16). Pyrolitic tin oxide is used in PV modules, touch screens and plasma displays. However indium tin oxide (ITO) is mostly used in the majority of flat panel display (FPD) applications. In FPDs, the basic function of ITO is as transparent electrodes. The volume of FPD’s produced, and hence the volume of ITO coatings produced, continues to grow rapidly. But the current increase in the cost of indium and the scarcity of this material created the difficulty in obtaining low cost TCOs. Hence search for alternative TCO materials has been a topic of active research for the last few decades. This resulted in the development of binary materials like ZnO, SnO2, CdO and ternary materials like II Zn2SnO4, CdSb2O6:Y, ZnSO3, GaInO3 etc. The use of multicomponent oxide materials makes it possible to have TCO films suitable for specialized applications because by altering their chemical compositions, one can control the electrical, optical, chemical and physical properties. But the advantages of using binary materials are the easiness to control the chemical compositions and depositions conditions. Recently, there were reports claiming the deposition of CdO:In films with a resistivity of the order of 10-5 ohm cm for flat panel displays and solar cells. However they find limited use because of Cd-Toxicity. In this regard, ZnO films developed in 1980s, are very useful as these use Zn, an abundant, inexpensive and nontoxic material. Resistivity of this material is still not very low, but can be reduced through doping with group-III elements like In, Al or Ga or with F [6]. Hence there is a great interest in ZnO as an alternative of ITO. In the present study, we prepared and characterized transparent and conducting ZnO thin films, using a cost effective technique viz Chemical Spray Pyrolysis (CSP). This technique is also suitable for large area film deposition. It involves spraying a solution, (usually aqueous) containing soluble salts of the constituents of the desired compound, onto a heated substrate.