977 resultados para AC electric field


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采用1/4规整膜系,从电场强度、吸收损耗及散射损耗的分布几个方面,对影响193 nm反射膜性能的因素进行了分析。以分析结果为基础,对低损耗193 nm反射膜的设计进行了探讨。结果表明:在空气侧的外膜层中电场强度较大,随着层数向内过渡,电场强度迅速减小;高折射率材料膜层的吸收损耗明显高于低折射率材料膜层的吸收损耗,而且靠近空气侧最外层的高折射率膜层的吸收损耗最大;按由外层向内层过渡的方向,吸收损耗迅速减小,减小的速度与高低折射率材料折射率的比值相关;表面散射损耗与两种材料的折射率比值成正比,但折射率比值减小后只能通过增加膜层数来获得一定的反射率,而这样又会使表面粗糙度增加,并且引入其它的损耗。因此,选择折射率差值适当大一些的材料对降低散射损耗是有利的。设计了27层膜堆的193 nm反射膜,设计反射率在98%以上。

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We report on the design of a high diffraction efficiency multi-layer dielectric grating with wide incident angle and broad bandwidth for 800 nm. The optimized grating can achieve > 95% diffraction efficiency in the first order at an incident angle of 5 degrees from Littrow and a wavelength from 770nm to 830 nm, with peak diffraction efficiency of > 99.5% at 800 nm. The electric field distribution of the optimized multi-layer dielectric grating within the gratings ridge is 1.3 times enhancement of the incidence light, which presents potential high laser resistance ability. Because of its high-efficiency, wide incident, broad bandwidth and potential high resistance ability, the multi-layer dielectric grating should have practical application in Ti:sapphire laser systems.

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A series or Ta2O5 films with different SiO2 additional layers including overcoat, undercoat and interlayer was prepared by electron beam evaporation under the same deposition process. Absorption of samples was measured using the surface thermal lensing (STL) technique. The electric field distributions of the samples were theoretical predicted using thin film design software (TFCalc). The laser induced damage threshold (LIDT) was assessed using an Nd:YAG laser operating at 1064 nm with a pulse length of 12 ns. It was found that SiO2 additional layers resulted in a slight increase of the absorption, whereas they exerted little influence on the microdefects. The electric field distribution among the samples was unchanged by adding an SiO2 overcoat and undercoat, yet was changed by adding an interlayer. SiO2 undercoat. The interlayer improved the LIDT greatly, whereas the SiO2 overcoat had little effect on the LIDT. (C) 2007 Elsevier Ltd. All rights reserved.

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Ta2O5薄膜采用传统的电子束蒸发方法沉积在BK7基底上。文中对SiO2保护层和退火对Ta2O5薄膜的激光损伤阈值的不同影响进行了研究。结果表明,SiO2保护层不会影响薄膜内的电场分布,薄膜微结构和微缺陷密度,但是会使薄膜的吸收稍微增大;而退火对降低薄膜的微缺陷密度和吸收较有效。SiO2保护层和退火都有利于提高Ta2O5薄膜的抗激光损伤能力,并且退火对提高阈值的影响更为明显。此外,采用SiO2保护层和退火结合的方法,获得了具有最大激光损伤阈值的薄膜。

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用热舟蒸发法结合修正挡板技术制备了355 nm LaF3/MgF2增透膜,并对部分样品进行了真空退火。采用Lambda 900光谱仪测试了增透膜的低反光谱和透射光谱,并考察了其光谱稳定性;使用脉冲8 ns的355 nm激光测试了增透膜的激光损伤阈值(LIDT);采用Normarski显微镜对增透膜的表面缺陷密度和破斑形貌进行了观察。实验结果表明,制备得到的增透膜的剩余反射率较低,光谱稳定性好;真空退火对增透膜的激光损伤阈值没有改善;增透膜的破环形貌为散点形式,结合破斑深度测试表明薄膜的破坏源于薄膜和基底界面的缺陷点。JGS1熔石英基底由于有好的表面状况、固有的高激光损伤阈值和以其为基底的增透膜具有更低的表面场强,使得其上的增透膜有更高的抗激光损伤能力。

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In this paper, we design resonant reflection grating filters employing the second diffracted orders as the leaky modes, then analyze the bandwidth of the reflection peak and the electric field distributions inside the wavegude under resonance. The numeric calculation confirms that ultra-narrow resonant reflection peaks can be observed in these structures. At the same time, strong electric field enhancement appears under resonance. It provides a new approach to diversify the resonant reflection filters and may open a new way to the realization of ultra-narrow bandwidth filters. (C) 2008 Elsevier B.V. All rights reserved.

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It has been widely recognized that the combination of carbon nanotubes (CNTs) and low molar mass thermotropic liquid crystals (tLCs) not only provides a useful way to align CNTs, but also dramatically enhances the tLC performance especially in the liquid crystal display technology. Such CNT-tLC nanocomposites have ignited hopes to address many stubborn problems within the field, such as low contrast, slow response, and narrow view angle. However, this material development has been limited by the poor solubility of CNTs in tLCs. Here, we describe an effective strategy to solve the problem. Prior to integrating with tLCs, pristine CNTs are physically "coated" by a liquid crystalline polymer (LCP) which is compatible with tLCs. The homogeneous CNT-tLC composite obtained in this way is stable for over 6 months, and the concentration of CNTs in tLCs can reach 1 wt %. We further demonstrate the alignment of CNTs at high CNT concentrations by an electric field with a theory to model the impedance response of the CNT-tLC mixture.

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The electric field distribution in the super junction power MOSFET is analyzed using analytical modeling and numerical simulations in this paper. The single-event burn-out (SEB) and single-event gate rupture (SEGR) phenomena in this device are studied in detail. It is demonstrated that the super junction device is much less sensitive to SEB and SEGR compared to the standard power MOSFET. The physical mechanism is explained.

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In this paper, we demonstrate for the first time that insulative dielectrophoresis can induce size-dependent trajectories of DNA macromolecules. We experimentally use lambda (48.5 kbp) and T4GT7 (165.6 kbp) DNA molecules flowing continuously around a sharp corner inside fluidic channels with a depth of 0.4 mum. Numerical simulation of the electrokinetic force distribution inside the channels is in qualitative agreement with our experimentally observed trajectories. We discuss a possible physical mechanism for the DNA polarization and dielectrophoresis inside confining channels, based on the observed dielectrophoresis responses due to different DNA sizes and various electric fields applied between the inlet and the outlet. The proposed physical mechanism indicates that further extensive investigations, both theoretically and experimentally, would be very useful to better elucidate the forces involved at DNA dielectrophoresis. When applied for size-based sorting of DNA molecules, our sorting method offers two major advantages compared to earlier attempts with insulative dielectrophoresis: Its continuous operation allows for high-throughput analysis, and it only requires electric field strengths as low as approximately 10 Vcm.

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This paper describes a new way to perform hydrodynamic chromatography (HDC) for the size separation of particles based on a unique recirculating flow pattern. Pressure-driven (PF) and electro-osmotic flows (EOF) are opposed in narrow glass microchannels that expand at both ends. The resulting bidirectional flow turns into recirculating flow because of nonuniform microchannel dimensions. This hydrodynamic effect, combined with the electrokinetic migration of the particles themselves, results in a trapping phenomenon, which we have termed flow-induced electrokinetic trapping (FIET). In this paper, we exploit recirculating flow and FIET to perform a size-based separation of samples of microparticles trapped in a short separation channel using a HDC approach. Because these particles have the same charge (same zeta potential), they exhibit the same electrophoretic mobility, but they can be separated according to size in the recirculating flow. While trapped, particles have a net drift velocity toward the low-pressure end of the channel. When, because of a change in the externally applied PF or electric field, the sign of the net drift velocity reverses, particles can escape the separation channel in the direction of EOF. Larger particles exhibit a larger net drift velocity opposing EOF, so that the smaller particles escape the separation channel first. In the example presented here, a sample plug containing 2.33 and 2.82 microm polymer particles was introduced from the inlet into a 3-mm-long separation channel and trapped. Through tuning of the electric field with respect to the applied PF, the particles could be separated, with the advantage that larger particles remained trapped. The separation of particles with less than 500 nm differences in diameter was performed with an analytical resolution comparable to that of baseline separation in chromatography. When the sample was not trapped in the separation channel but located further downstream, separations could be carried out continuously rather than in batch. Smaller particles could successfully pass through the separation channel, and particles were separated by size. One of the main advantages of exploiting FIET for HDC is that this method can be applied in quite short (a few millimeters) channel geometries. This is in great contrast to examples published to date for the separation of nanoparticles in much longer micro- and nanochannels.

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The carbon nanotube-liquid-crystal (CNT-LC) nanophotonic device is a class of device based on the hybrid combination of a sparse array of multiwall carbon nanotube electrodes grown on a silicon surface in a liquid-crystal cell. The multiwall carbon nanotubes act as individual electrode sites that spawn an electric-field profile, dictating the refractive index profile within the liquid crystal and hence creating a series of graded index profiles, which form various optical elements such as a simple microlens array. We present the refractive index and therefore phase modulation capabilities of a CNT-LC nanophotonic device with experimental results as well as computer modeling and potential applications.

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The flexoelectro-optic effect describes the rotation of the optic axis of a short-pitch chiral nematic liquid crystal under the application of an electric field. We investigate the effect in the uniform standing helix, or "Grandjean" configuration. An in-plane electric field is applied. The director profile is determined numerically using a static one-dimensional continuum model with strong surface anchoring. The Berreman method is used to solve for plane-wave solutions to Maxwell's equations, and predict the optical properties of the resulting structure in general cases. By using a chiral nematic with short pitch between crossed polarizers an optical switch may be generated. With no applied field the configuration is nontransmissive at normal incidence, but becomes transmissive with an applied field. For this case, numerical results using the Berreman method are supplemented with an analytic theory and found to be in good agreement. The transmitted intensity as a function of tilt, the contrast ratio, and the tilt required for full intensity modulation are presented. The angular dependence of the transmission is calculated and the isocontrast curves are plotted. For typical material and cell parameters a switching speed of 0.017 ms and contrast ratio of 1500:1 at normal incidence are predicted, at a switch-on tilt of 41.5 degrees. Experimental verification of the analytic and numerical models is provided.

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We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure hydrogen annealing (HPHA) at relatively low temperature (400 °C). These ZnO nanowire devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We show that the memory characteristics are attributed to the movement of protons between the Si/SiO(2) interface and the SiO(2)/ZnO nanowire interface by the applied gate electric field. The memory mechanism is explained in terms of the tuning of interface properties, such as effective electric field, surface charge density, and surface barrier potential due to the movement of protons in the SiO(2) layer, consistent with the UV photoresponse characteristics of nanowire memory devices. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a modified CMOS platform for FET memory devices using nanomaterials.

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We present electro-optic characteristics of a transparent nanophotonic device fabricated on quartz substrate based on multiwall carbon nanotubes and nematic liquid crystals (LCs). The nanotube electrodes spawn a Gaussian electric field to three dimensionally address the LC molecules. The electro-optic characteristics of the device were investigated to optimize the device performance and it was found that lower driving voltages were suitable for microlens array and phase modulation applications, while higher driving voltages with a holding voltage can be used for display-related applications.

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This paper presents an analytical model for the determination of the basic breakdown properties of three-dimensional (3D)-RESURF/CoolMOS/super junction type structures. To account for the two-dimensional (2D) effect of the 3D-RESURF action, 2D models of the electric field distribution are developed. Based on these, expressions are derived for the breakdown voltage as a function of doping concentration and physical dimensions. In addition to cases where the drift regions are fully depleted, the model developed is also applicable to situations involving drift regions which are almost depleted. Accuracy of the analytical approach is verified by comparison with numerical results obtained from the MEDICI device simulator.