994 resultados para voltage improvement
Resumo:
Non-linear resistors having current-limiting capabilities at lower field strengths, and voltage-limiting characteristics (varistors) at higher field strengths, were prepared from sintered polycrystalline ceramics of (Ba0.6Sr0.4)(Ti0.97Zr0.03)O3+0.3 at % La, and reannealed after painting with low-melting mixtures of Bi2O3 + PbO +B2O3. These types of non-linear characteristics were found to depend upon the non-uniform diffusion of lead and the consequent distribution of Curie points (T c) in these perovskites, resulting in diffuse phase transitions. Tunnelling of electrons across the asymmetric barrier at tetragonak-cubic interfaces changes to tunnelling across the symmetric barrier as the cubic phase is fully stabilized through Joule heating at high field strengths. Therefore the current-limiting characteristics switch over to voltage-limiting behaviour because tunnelling to acceptor-type mid-bandgap states gives way to band-to-band tunnelling.
Resumo:
In this paper, an effort is made to study accurately the field distribution for various types of ceramic insulators used for high-voltage transmission. The surface charge simulation method (SCSM) is employed for the field computation. With the help of SCSM program, a Novel field reduction electrode is designed and developed to reduce the maximum field around the pin region. In order to experimentally analyze the performance of discs with field reduction electrode, special artificial pollution test facility was built and utilized. The experimental results show better surface flashover performance of ceramic insulators used in high-voltage transmission and distribution systems.
Resumo:
This paper presents the analysis and study of voltage collapse at any converter bus in an AC system interconnected by multiterminal DC (MTDC) links. The analysis is based on the use of the voltage sensitivity factor (VSF) as a voltage collapse proximity indicator (VCPI). In this paper the VSF is defined as a matrix which is applicable to MTDC systems. The VSF matrix is derived from the basic steady state equations of the converter, control, DC and AC networks. The structure of the matrix enables the derivation of some of the basic properties which are generally applicable. A detailed case study of a four-terminal MTDC system is presented to illustrate the effects of control strategies at the voltage setting terminal (VST) and other terminals. The controls considered are either constant angle, DC voltage, AC voltage, reactive current and reactive power at the VST and constant power or current at the other terminals. The effect of the strength of the AC system (measured by short circuit ratio) on the VSF is investigated. Several interesting and new results are presented. An analytical expression for the self VSF at VST is also derived for some specific cases which help to explain the number of transitions in VSF around the critical values of SCR.
Resumo:
In order to answer the practically important question of whether the down conductors of lightning protection systems to tall towers and buildings can be electrically isolated from the structure itself, this work is conducted. As a first step in this regard, it is presumed that the down conductor placed on metallic tower will be a pessimistic representation of the actual problem. This opinion was based on the fact that the proximity of heavy metallic structure will have a large damping effect. The post-stroke current distributions along the down conductors and towers, which can be quite different from that in the lightning channel, govern the post-stroke near field and the resulting gradient in the soil. Also, for a reliable estimation of the actual stroke current from the measured down conductor currents, it is essential to know the current distribution characteristics along the down conductors. In view of these, the present work attempts to deduce the post-stroke current and voltage distribution along typical down conductors and towers. A solution of the governing field equations on an electromagnetic model of the system is sought for the investigation. Simulation results providing the spatio-temporal distribution of the post-stroke current and voltage has provided very interesting results. It is concluded that it is almost impossible to achieve electrical isolation between the structure and the down conductor. Furthermore, there will be significant induction into the steel matrix of the supporting structure.
Resumo:
The constructional details of an 18-bit binary inductive voltage divider (IVD) for a.c. bridge applications is described. Simplified construction with less number of windings, interconnection of winding through SPDT solid state relays instead of DPDT relays, improves reliability of IVD. High accuracy for most precision measurement achieved without D/A converters. The checks for self consistency in voltage division shows that the error is less than 2 counts in 2(18).
Resumo:
In this paper, a physically based analytical quantum linear threshold voltage model for short channel quad gate MOSFETs is developed. The proposed model, which is suitable for circuit simulation, is based on the analytical solution of 3-D Poisson and 2-D Schrodinger equation. Proposed model is fully validated against the professional numerical device simulator for a wide range of device geometries and also used to analyze the effect of geometry variation on the threshold voltage.
Resumo:
Epoxy nanocomposite samples with a good dispersion of alumina nanoparticles in epoxy matrix were prepared and experiments were performed to measure their partial discharge resistant characteristics. Epoxy alumina nanocomposites with 0.1, 1, 5, 10 and 15 wt% nanofillers were prepared in the laboratory and partial discharge (PD) experiments were conducted at a voltage of 10 kV for different durations using IEC (b) type electrodes. The degradation of the sample surfaces were analyzed using SEM techniques, surface profile studies, FTIR spectroscopy as well as PD studies. An attempt was made to understand the interaction dynamics between the nanoparticle and the epoxy chain by measuring the glass transition temperature of the nanocomposites. The partial discharge resistance obtained for the nanocomposites are compared with those of unfilled epoxy and epoxy microcomposites. It was observed that even with 0.1 wt% of nanofiller added to the epoxy matrix, the partial discharge resistance to degradation gets improved considerably. It was also observed that the inter particle distance has a significant effect on the discharge resistance to degradation. The improvement in the degradation resistance is attributed to the interactions between the nanoparticle and the epoxy chain. A possible mechanism for the surface degradation of nanocomposites has been proposed.
Resumo:
This paper investigates the diversity-multiplexing gain tradeoff (DMT) of a time-division duplex (TDD) single-input multiple-output (SIMO) system with perfect channel state information (CSI) at the receiver (CSIR) and partial CSI at the transmitter (CSIT). The partial CSIT is acquired through a training sequence from the receiver to the transmitter. The training sequence is chosen in an intelligent manner based on the CSIR, to reduce the training length by a factor of r, the number of receive antennas. We show that, for the proposed training scheme and a given channel coherence time, the diversity order increases linearly with r for nonzero multiplexing gain. This is a significant improvement over conventional orthogonal training schemes.
Resumo:
Surface flashover characteristics of solid spacers in a rod-plane configuration have been investigated in SF6, at pressures to 400 kPa, for switching impulse voltages to determine the effect of spacer, spacer materials and polarity of applied impulses. The effect of spacer material on the flashover voltage is not significant. For negative polarity impulses, the influence of the spacer is also insignificant. But for positive polarity impulses, at pressures < 200 kPa, the spacer efficiency becomes > 1.0. On the other hand, at pressures > 200 kPa, the presence of spacer drastically reduces the flashover voltage of the system. At about atmospheric pressure also, the spacer efficiency in air has been found to be > 1.0, with the same electrode geometry.
Resumo:
This paper presents the analysis and study of voltage collapse at any converter bus in A C-DC systems considering the dynamics of DC system. The problem of voltage instability is acute when HVDC links are connected to weak AC systems, the strength determined by short circuit ratio (SCR) at the converter bus. The converter control strategies are important in determining voltage instability. Small signal analysis is used to identify critical modes and evaluate the effect of AC system strength and control parameters. A sample two-terminal DC system is studied and the results compared with those obtained from static analysis. Also, the results obtained from small signal analysis are validated with nonlinear simulation.
Resumo:
This paper is devoted to the improvement in the range of operation (linearity range) of chimney weir (consisting of a rectangular weir or vertical slot over an inward trapezium), A new and more elegant optimization procedure is developed to analyse the discharge-head relationship in the weir. It is shown that a rectangular weir placed over an inverted V-notch of depth 0.90d gives the maximum operating range, where d is the overall depth of the inward trapezoidal weir (from the crest to the vertex). For all flows in the rectangular portion, the discharge is proportional to the linear power of the head, h, measured above a reference plane located at 0.292d below the weir crest, in the range 0.90d less than or equal to h less than or equal to 7.474: within a maximum error of +/-1.5% from the theoretical discharge. The optimum range of operation of the newly designed weir is 200% greater than that in the chimney weir designed by Keshava Murthy and Giridhar, and is nearly 950% greater than that in the inverted V-notch. Experiments with two weirs having half crest widths of 0.10 and 0.12 m yield a constant average coefficient of discharge of 0.634 and confirm the theory. The application of the weir in the design of rectangular grit chamber outlet is emphasized, in that the datum for the linear discharge-head relationship is below the crest level of the weir.
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An in-situ power monitoring technique for Dynamic Voltage and Threshold scaling (DVTS) systems is proposed which measures total power consumed by load circuit using sleep transistor acting as power sensor. Design details of power monitor are examined using simulation framework in UMC 90nm CMOS process. Experimental results of test chip fabricated in AMS 0.35µm CMOS process are presented. The test chip has variable activity between 0.05 and 0.5 and has PMOS VTH control through nWell contact. Maximum resolution obtained from power monitor is 0.25mV. Overhead of power monitor in terms of its power consumption is 0.244 mW (2.2% of total power of load circuit). Lastly, power monitor is used to demonstrate closed loop DVTS system. DVTS algorithm shows 46.3% power savings using in-situ power monitor.
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Treeing in polyethylene based nanocomposite samples as well as unfilled polyethylene samples were studied using 50Hz ac voltage. The tree inception voltage was observed for different types of samples. The tree initiation time as well as the tree growth patterns at a fixed ac voltage have also been studied. The results show that there is an improvement in tree inception voltage with nano filler loading in polyethylene. Different tree growth patterns for both the unfilled polyethylene and the polyethylene nanocomposites have been observed. A slower tree growth was observed in polyethylene nanocomposites. The partial discharge characteristics of unfilled and nano filled polyethylene samples during the electrical tree growth period was also studied. Decrease in PD magnitude as well as in the number of pd pulses with electrical tree growth duration in polyethylene nanocomposites has also been observed. The possible reasons for the improvement in electrical tree growth and PD resistance with the addition of nano fillers are discussed.