Single crystal diamond schottky diodes - Practical design considerations for enhanced device performance

Novel alternatives to the conventional single crystal diamond Schottky metal-intrinsic-p+ (m-i-p+) diode is presented in this work. The conduction mechanism of the device is analysed and structural modifications to enhance its performance are proposed. The periodic inclusion of highly p+ doped thin δ-layers and p+ spots in the intrinsic voltage blocking layer of the diode drastically improves the forward performance of these devices enhancing the forward current of the device by a factor of 10 - 17 with a maximum forward current density of ̃ 40 A/cm 2 for a 2 kV device.

Reducing energy demand: what are the practical limits?

Concern over the global energy system, whether driven by climate change, national security, or fears of shortage, is being discussed widely and in every arena but with a bias toward energy supply options. While demand reduction is often mentioned in passing, it is rarely a priority for implementation, whether through policy or through the search for innovation. This paper aims to draw attention to the opportunity for major reduction in energy demand, by presenting an analysis of how much of current global energy demand could be avoided. Previous work led to a "map" of global energy use that traces the flow of energy from primary sources (fuels or renewable sources), through fuel refinery, electricity generation, and end-use conversion devices, to passive systems and the delivery of final energy services (transport, illumination, and sustenance). The key passive systems are presented here and analyzed through simple engineering models with scalar equations using data based on current global practice. Physically credible options for change to key design parameters are identified and used to predict the energy savings possible for each system. The result demonstrates that 73% of global energy use could be saved by practically achievable design changes to passive systems. This reduction could be increased by further efficiency improvements in conversion devices. A list of the solutions required to achieve these savings is provided.

Electroosmotic flow analysis of a branched U-turn nanofluidic device.

In this paper, we present the analysis of electroosmotic flow in a branched -turn nanofluidic device, which we developed for detection and sorting of single molecules. The device, where the channel depth is only 150 nm, is designed to optically detect fluorescence from a volume as small as 270 attolitres (al) with a common wide-field fluorescent setup. We use distilled water as the liquid, in which we dilute 110 nm fluorescent beads employed as tracer-particles. Quantitative imaging is used to characterize the pathlines and velocity distribution of the electroosmotic flow in the device. Due to the device's complex geometry, the electroosmotic flow cannot be solved analytically. Therefore we use numerical flow simulation to model our device. Our results show that the deviation between measured and simulated data can be explained by the measured Brownian motion of the tracer-particles, which was not incorporated in the simulation.

Analytic model for turn off in the silicon-on-insulator LIGBT

Lateral insulated gate bipolar transistors (LIGBTs) in silicon-on-insulator (SOI) show a unique turn off characteristic when compared to junction-isolated RESURF LIGBTs or vertical IGBTs. The turn off characteristic shows an extended `terrace' where, after the initial fast transient characteristic of IGBTs due to the loss of the electron current, the current stays almost at the same value for an extended period of time, before suddenly dropping to zero. In this paper, we show that this terrace arises because there is a value of LIGBT current during switch off where the rate of expansion of the depletion region with respect to the anode current is infinite. Once this level of anode current is approached, the depletion region starts to expand very rapidly, and is only stopped when it reaches the n-type buffer layer surrounding the anode. Once this happens, the current rapidly drops to zero. A quasi-static analytic model is derived to explain this behaviour. The analytically modelled turn off characteristic agrees well with that found by numerical simulation.

Salinity measurements and use of the Practical Salinity Scale (PSS)

Salinity, temperature and pressure are parameters which govern the oceanographic state of a marine water body and together they make up density of seawater. In this contribution we will focus our interest on one of these parameters, the salinity: accuracy in relation to different purposes as well as observation technique and instrumentation. We will also discuss the definition of salinity. For example most of the Indian Ocean waters are within the salinity range from 34.60-34.80, which emphasize the importance of careful observations and clear definitions of salinity, in such a way that it is possible to define water masses and predict their movements. In coastal waters the salinity usually features much larger variation in time and space and thus less accuracy is sometimes needed. Salinity has been measured and defined in several ways over the past century. While early measurements were based on the amount of salt in a sea water sample, today the salinity of seawater is most often determined from its conductivity. As conductivity is a function of salinity and temperature, determination involves also measurement of the density of seawater is now more precisely estimated and thus the temperature. As a result of this method the Practical Salinity Scale (PSS) was developed. The best determination of salinity from conductivity and the temperature measurements gives salinity with resolution of 0.001 psu, while the accuracy of titration method was about ± 0.02‰. Because of that, even calculation of movements in the ocean is also improved.

Fast and compact simulation models for a variety of FET nano devices by the CMOS EKV equations

In this paper we explore the possibility of using the equations of a well known compact model for CMOS transistors as a parameterized compact model for a variety of FET based nano-technology devices. This can turn out to be a practical preliminary solution for system level architectural researchers, who could simulate behaviourally large scale systems, while more physically based models become available for each new device. We have used a four parameter version of the EKV model equations and verified that fitting errors are similar to those when using them for standard CMOS FET transistors. The model has been used for fitting measured data from three types of FET nano-technology devices obeying different physics, for different fabrication steps, and under different programming conditions. © 2009 IEEE NANO Organizers.

A practical demonstration of scalable, parallel mesh generation

Cambridge Flow Solutions Ltd, Compass House, Vision Park, Cambridge, CB4 9AD, UK Real-world simulation challenges are getting bigger: virtual aero-engines with multistage blade rows coupled with their secondary air systems & with fully featured geometry; environmental flows at meta-scales over resolved cities; synthetic battlefields. It is clear that the future of simulation is scalable, end-to-end parallelism. To address these challenges we have reported in a sequence of papers a series of inherently parallel building blocks based on the integration of a Level Set based geometry kernel with an octree-based cut-Cartesian mesh generator, RANS flow solver, post-processing and geometry management & editing. The cut-cells which characterize the approach are eliminated by exporting a body-conformal mesh driven by the underpinning Level Set and managed by mesh quality optimization algorithms; this permits third party flow solvers to be deployed. This paper continues this sequence by reporting & demonstrating two main novelties: variable depth volume mesh refinement enabling variable surface mesh refinement and a radical rework of the mesh generation into a bottom-up system based on Space Filling Curves. Also reported are the associated extensions to body-conformal mesh export. Everything is implemented in a scalable, parallel manner. As a practical demonstration, meshes of guaranteed quality are generated for a fully resolved, generic aircraft carrier geometry, a cooled disc brake assembly and a B747 in landing configuration. Copyright © 2009 by W.N.Dawes.

Soft turn-on of NPT IGBT under Active Voltage Control

In this paper the soft turn-on of NPT IGBT under Active Voltage Control (AVC) is presented. The AVC technique is able to control the IGBT switching trajectory according to a pre-defined reference signal generated by a FPGA chip. By applying a special designed reference signal at turn-on, the IGBT turn-on current overshoot and diode recovery can be optimized. Experiments of soft turn-on with different reference signal are presented in this paper. This technique can be used to reduce the switching stress on the device and on other components of the circuit. © 2011 IEEE.