Tailoring the surface density of silicon nanocrystals embedded in SiOx single layers

In this article, we explore the possibility of modifying the silicon nanocrystal areal density in SiOx single layers, while keeping constant their size. For this purpose, a set of SiOx monolayers with controlled thickness between two thick SiO2 layers has been fabricated, for four different compositions (x=1, 1.25, 1.5, or 1.75). The structural properties of the SiO x single layers have been analyzed by transmission electron microscopy (TEM) in planar view geometry. Energy-filtered TEM images revealed an almost constant Si-cluster size and a slight increase in the cluster areal density as the silicon content increases in the layers, while high resolution TEM images show that the size of the Si crystalline precipitates largely decreases as the SiO x stoichiometry approaches that of SiO2. The crystalline fraction was evaluated by combining the results from both techniques, finding a crystallinity reduction from 75% to 40%, for x = 1 and 1.75, respectively. Complementary photoluminescence measurements corroborate the precipitation of Si-nanocrystals with excellent emission properties for layers with the largest amount of excess silicon. The integrated emission from the nanoaggregates perfectly scales with their crystalline state, with no detectable emission for crystalline fractions below 40%. The combination of the structural and luminescence observations suggests that small Si precipitates are submitted to a higher compressive local stress applied by the SiO2 matrix that could inhibit the phase separation and, in turn, promotes the creation of nonradiative paths.

Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by Hot-Wire Chemical Vapour Deposition

The very usual columnar growth of nanocrystalline silicon leads to electronic transport anisotropies. Whereas electrical measurements with coplanar electrodes only provide information about the electronic transport parallel to the substrate, it is the transverse transport which determines the collection efficiency in thin film solar cells. Hence, Schottky diodes on transparent electrodes were obtained by hot-wire CVD in order to perform external quantum efficiency and surface photovoltage studies in sandwich configuration. These measurements allowed to calculate a transverse collection length, which must correlate with the photovoltaic performance of thin film solar cells. Furthermore, the density of charge trapped at localized states in the bandgap was estimated from the voltage dependence of the depletion capacitance of these rectifying contacts.

Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD

Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.

Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition

Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance.

Structure of a-Si:H/a-Si1-xCx:H multilayers deposited in a reactor with automated substrate holder

This paper deals with the structural properties of a-Si:H/a-Si1-xCx: H multilayers deposited by glow-discharge decomposition of SiH4 and SiH4 and CH4 mixtures. The main feature of the rf plasma reactor is an automated substrate holder. The plasma stabilization time and its influence on the multilayer obtained is discussed. A series of a-Si:H/a-Si1-xCx: H multilayers has been deposited and characterized by secondary ion mass spectrometry (SIMS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). No asymmetry between the two types of interface has been observed. The results show that the multilayers present a very good periodicity and low roughness. The difficulty of determining the abruptness of the multilayer at the nanometer scale is discussed.

Dissulfeto de molibdênio, um material multifuncional e surpreendente

The aim of this work is to review the chemical and physical properties of layered molybdenum disulfide. The three polymorphic/polytypic modifications of the compound were found, the polytypes 2H (molybdenite) and 3R are semiconductors while the polymorph 1T is an electronic conductor. 2H-MoS2 has several important industrial applications as hydrotreatment catalysts, energy storage devices, solar cells, solid lubricants, among others. When intercalated, the 2H phase changes to a distorted 1T phase, producing unstable intercalation compounds that can be exfoliated in solution, producing single layers and consequently nanocomposites. The direct synthesis of the 1T phase produces stable intercalation compounds. Recently molybdenum disulfide was prepared as nanotubes and fulerene-like structures that bring new insights in the investigation of this important material.

Celulas solares y sistemas fotovoltaicos. Manual de prácticas

Manual de prácticas de la asignatura optativa

DC Boost Stage in Photovoltaic Systems

The performance of Grid connected Photovoltaic System working with DCBoost stage is investigated. The DC-Boost Converter topology is deduced from three phase half controlled bridge and controlled by Sliding Mode Control. Due to the fact that Grid connected Photovoltaic System includes Solar cells as a DC source and inverter for grid connection, those are under the scope of this research as well. The advantages of using MPPT are analyzed. The system is simulated in Matlab-Simulink™ environment.

Em busca da sustentabilidade: células solares sensibilizadas por extratos naturais

The present work reports the use of anthocyanins extracted from mulberry (Morus Alba L.), raspberry (Rubus Idaeus L.) and blueberry (Vaccinium myrtillus L.) as sensitizers in dye-sensitized solar cells. The conversion efficiency of these devices is dependent on the extracts employed and can be rationalized in terms of their composition and spectral properties. Solar cells sensitized by the mulberry extract showed the highest efficiency among the fruits investigated. Moreover, a 16 cm² active area solar cell with the mulberry extract has presented fair good efficiency of conversion for natural dye-based solar cells, besides stability over twenty weeks, showing perspectives for developing these low cost devices with a commercial viability.

CÉLULAS SOLARES SENSIBILIZADAS POR CORANTES NATURAIS: UM EXPERIMENTO INTRODUTÓRIO SOBRE ENERGIA RENOVÁVEL PARA ALUNOS DE GRADUAÇÃO

An interesting practical experiment about the preparation of dye–sensitized solar cells (DSSC) using natural dyes were carried out by the undergraduate students in the chemistry course at UNICAMP . Natural dyes were extracted from blueberries (Vaccinium myrtillus L.), jabuticabas (Myrciaria cauliflora), raw and cooked beets (Beta vulgaris L.), and annattos (Bixa orellana L.), which were used to sensitize TiO2 films that composed the photoanode in the DSSC. A polymer electrolyte containing an iodide/triiodide redox couple was used in lieu of the use of liquid solutions to prevent any leakage in the devices. A maximum solar-to-electric energy conversion of 0.26 ± 0.02% was obtained for the solar cell prepared with annatto extracts. This experiment was an effective way to illustrate to the undergraduate students how to apply some of the chemical concepts that they learned during their chemistry course to produce electric energy from a clean and renewable energy source. Teachers could also exploit the basics of the electronic transitions in inorganic and organic compounds (e.g., metal-to-ligand charge transfer and ϖ-ϖ* transitions), thermodynamics (e.g., Gibbs free energy), acid–base reactions in the oxide solid surface and electrolyte, and band theory (i.e., the importance of the Fermi level energy).

PREPARAÇÃO DE PONTOS DE CARBONO E SUA CARACTERIZAÇÃO ÓPTICA: UM EXPERIMENTO PARA INTRODUZIR NANOCIÊNCIA NA GRADUAÇÃO

Carbon dots (CDs) constitute a new class of carbon-based nanomaterials that measure less than 10 nm and display attractive physical and chemical features such as fluorescence. CDs have been considered the new “power” carbon nanomaterials since their accidental discovery in 2004. This study reports a simple, easy, and accessible experiment for undergraduate courses. The experiment involves the preparation of CDs by pyrolysis using commercial gelatin as a low cost precursor as well as CD purification and optical characterization. The optical properties of CDs such as absorption and emission properties make them a promising material for teaching the basic concepts and techniques used for characterization of nanomaterials. Also, the reactants and final product are suitable for undergraduate courses since they are non-toxic materials. The prepared CDs can be used in such applications as bioimaging, solar cells, and photocatalysis.

Defects in Persistent Luminescence Materials

Persistent luminescence materials can store energy from solar radiation or artificial lighting and release it over a period of several hours without a continuous excitation source. These materials are widely used to improve human safety in emergency and traffic signalization. They can also be utilized in novel applications including solar cells, medical diagnostics, radiation detectors and structural damage sensors. The development of these materials is currently based on methods based on trial and error. The tailoring of new materials is also hindered by the lack of knowledge on the role of their intrinsic and extrinsic lattice defects in the appropriate mechanisms. The goal of this work was to clarify the persistent luminescence mechanisms by combining ab initio density functional theory (DFT) calculations with selected experimental methods. The DFT approach enables a full control of both the nature of the defects and their locations in the host lattice. The materials studied in the present work, the distrontium magnesium disilicate (Sr₂MgSi₂O₇) and strontium aluminate (SrAl₂O₄) are among the most efficient persistent luminescence hosts when doped with divalent europium Eu²⁺ and co-doped with trivalent rare earth ions R³⁺ (R: Y, La-Nd, Sm, Gd-Lu). The polycrystalline materials were prepared with the solid state method and their structural and phase purity was confirmed by X-ray powder diffraction. Their local crystal structure was studied by high-resolution transmission electron microscopy. The crystal and electronic structure of the nondoped as well as Eu²⁺, R^2+/3+ and other defect containing materials were studied using DFT calculations. The experimental trap depths were obtained using thermoluminescence (TL) spectroscopy. The emission and excitation of Sr₂MgSi₂O₇:Eu²+,Dy³⁺ were also studied. Significant modifications in the local crystal structure due to the Eu²⁺ ion and lattice defects were found by the experimental and DFT methods. The charge compensation effects induced by the R³⁺ co-doping further increased the number of defects and distortions in the host lattice. As for the electronic structure of Sr₂MgSi₂O₇ and SrAl₂O₄, the experimental band gap energy of the host materials was well reproduced by the calculations. The DFT calculated Eu²⁺ and R^2+/3+ 4fn as well as 4f^n-15d¹ ground states in the Sr₂MgSi₂O₇ band structure provide an independent verification for an empirical model which is constructed using rather sparse experimental data for the R³⁺ and especially the R²⁺ ions. The intrinsic and defect induced electron traps were found to act together as energy storage sites contributing to the materials’ efficient persistent luminescence. The calculated trap energy range agreed with the trap structure of Sr₂MgSi₂O₇ obtained using TL measurements. More experimental studies should be carried out for SrAl₂O₄ to compare with the DFT calculations. The calculated and experimental results show that the electron traps created by both the rare earth ions and vacancies are modified due to the defect aggregation and charge compensation effects. The relationships between this modification and the energy storage properties of the solid state materials are discussed.

Unusual bismuth-containing surface layers of III-V compound semiconductors

The understanding and engineering of bismuth (Bi) containing semiconductor surfaces are signi cant in the development of novel semiconductor materials for electronic and optoelectronic devices such as high-e ciency solar cells, lasers and light emitting diodes. For example, a Bi surface layer can be used as a surfactant which oats on a III-V compound-semiconductor surface during the epitaxial growth of IIIV lms. This Bi surfactant layer improves the lm-growth conditions if compared to the growth without the Bi layer. Therefore, detailed knowledge of the properties of the Bi/III-V surfaces is needed. In this thesis, well-de ned surface layers containing Bi have been produced on various III-V semiconductor substrates. The properties of these Bi-induced surfaces have been measured by low-energy electron di raction (LEED), scanning-tunneling microscopy and spectroscopy (STM), and synchrotron-radiation photoelectron spectroscopy. The experimental results have been compared with theoretically calculated results to resolve the atomic structures of the studied surfaces. The main ndings of this research concern the determination of the properties of an unusual Bi-containing (2×1) surface structure, the discovery and characterization of a uniform pattern of Bi nanolines, and the optimization of the preparation conditions for this Bi-nanoline pattern.

Kaksisuuntaisen DC/DC-hakkurin virtasäätö polttokennosovelluksessa

Ilmastonmuutos ja fossiilisten polttoaineiden ehtyminen ovat edesauttaneet uusiutuvien energialähteiden tutkimusta huomattavasti. Lisäksi alati kasvava sähköenergian tarve lisää hajautetun sähköntuotannon ja vaihtoehtoisten energialähteiden kiinnostavuutta. Yleisimpiä hajautetun sähköntuotannon energialähteitä ovat tuulivoima, aurinkovoima ja uutena tulokkaana polttokennot. Polttokennon kytkeminen sähköverkkoon vaatii tehoelektroniikkaa, ja yleensä yksinkertaisessa polttokennosovelluksessa polttokenno kytketään galvaanisesti erottavan yksisuuntaisen DC/DC-hakkurin ja vaihtosuuntaajan kanssa sarjaan. Polttokennon rinnalla voidaan käyttää akkua tasaamaan polttokennon syöttämää jännitettä, jolloin akun ja polttokennon väliin tarvitaan kaksisuuntainen DC/DC-hakkuri, joka pystyy siirtämään energiaa molempiin suuntiin. Tässä diplomityössä on esitetty kaksisuuntaisen DC/DC-hakkurin tilayhtälökeskiarvoistusmenetelmään perustuva malli sekä mallin perusteella toteutettu virtasäätö. Tutkittava hakkuritopologia on kokosilta-tyyppinen boost-hakkuri, ja säätömenetelmä keskiarvovirtasäätö. Työn tuloksena syntyi tilayhtälömalli kaksisuuntaiselle FB boost -hakkurille sekä sen tulokelan virran säätämiseen soveltuva säädin. Säädin toimii normaalitilanteissa hyvin, mutta erikoistilanteissa, kuten hakkurin tulojännitteen äkillisessä muutostilanteessa, vaadittaisiin tehokkaampi säädin, jolla saavutettaisiin nopeampi nousuaika ilman ylitystä ja oskillointia.

Computational modeling of the properties of TiO2 nanoparticles

In this study we discuss the electronic, structural, and optical properties of titanium dioxide nanoparticles, and also the properties of Ni(II) diimine dithiolato complexes as dyes in dye-sensitized TiO2 based solar cells. The abovementioned properties have been modeled by using computational codes based on the density functional theory. The results achieved show slight evidence on the structure-dependent band gap broadening, and clear blue-shifts in absorption spectra and refractive index functions of ultra-small TiO2 particles. It is also shown that these properties are strongly dependent on the shape of the nanoparticles. Regarding the Ni(II) diimine dithiolato complexes as dyes in dye-sensitized TiO2 based solar cells, it is shown that based on the experimental electrochemical investigation and DFT studies all studied diimine derivatives could serve as potential candidates for the light harvesting, but the e ciencies of the dyes studied are not very promising.