Alpha-band power in the left frontal cortex discriminates the execution of fixed stimulus during saccadic eye movement

Introduction: The saccadic paradigm has been used to investigate specific cortical networks involving attention. The behavioral and electrophysiological investigations of the SEM contribute significantly to the understanding of attentive patterns presented of neurological and psychiatric disorders and sports performance. Objective: The current study aimed to investigate absolute alpha power changes in sensorimotor brain regions and the frontal eye fields during the execution of a saccadic task. Methods: Twelve healthy volunteers (mean age: 26.25; SD: +/- 4.13) performed a saccadic task while the electroencephalographic signal was simultaneously recorded for the cerebral cortex electrodes. The participants were instructed to follow the LEDs with their eyes, being submitted to two different task conditions: a fixed pattern versus a random pattern. Results: We found a moment main effect for the C3, C4, F3 and F4 electrodes and a condition main effect for the F3 electrode. We also found interaction between factor conditions and frontal electrodes. Conclusions: We conclude that absolute alpha power in the left frontal cortex discriminates the execution of the two stimulus presentation patterns during SEM. (C) 2012 Elsevier Ireland Ltd. All rights reserved.

CNO and F abundances in the globular cluster M22 (NGC 6656)

Context. Recent studies have confirmed the long standing suspicion that M 22 shares a metallicity spread and complex chemical enrichment history similar to that observed in omega Cen. M 22 is among the most massive Galactic globular clusters and its color-magnitude diagram and chemical abundances reveal the existence of sub-populations. Aims. To further constrain the chemical diversity of M 22, necessary to interpret its nucleosynthetic history, we seek to measure relative abundance ratios of key elements (carbon, nitrogen, oxygen, and fluorine) best studied, or only available, using high-resolution spectra at infrared wavelengths. Methods. High-resolution (R = 50 000) and high S/N infrared spectra were acquired of nine red giant stars with Phoenix at the Gemini-South telescope. Chemical abundances were calculated through a standard 1D local thermodynamic equilibrium analysis using Kurucz model atmospheres. Results. We derive [Fe/H] = -1.87 to -1.44, confirming at infrared wavelengths that M 22 does present a [Fe/H] spread. We also find large C and N abundance spreads, which confirm previous results in the literature but based on a smaller sample. Our results show a spread in A(C+N+O) of similar to 0.7 dex. Similar to mono-metallic globular clusters, M 22 presents a strong [Na/Fe]-[O/Fe] anticorrelation as derived from Na and CO lines in the K band. For the first time we recover F abundances in M 22 and find that it exhibits a 0.6 dex variation. We find tentative evidence for a flatter A(F)-A(O) relation compared to higher metallicity globular clusters. Conclusions. Our study confirms and expands upon the chemical diversity seen in this complex stellar system. All elements studied to date show large abundance spreads which require contributions from both massive and low mass stars.

Valence band tail states in disordered superlattices embedded in wide parabolic AlGaAs well

Optical properties of intentionally disordered multiple quantum well (QW) system embedded in a wide AlGaAs parabolic well were investigated by photoluminescence (PL) measurements as functions of the laser excitation power and the temperature. The characterization of the carriers localized in the individual wells was allowed due to the artificial disorder that caused spectral separation of the photoluminescence lines emitted by different wells. We observed that the photoluminescence peak intensity from each quantum well shifted to high energy as the excitation power was increased. This blue-shift is associated with the filling of localized states in the valence band tail. We also found that the dependence of the peak intensity on the temperature is very sensitive to the excitation power. The temperature dependence of the photoluminescence peak energy from each QW was well fitted using a model that takes into account the thermal redistribution of the localized carriers. Our results demonstrate that the band tails in the studied structures are caused by alloy potential fluctuations and the band tail states dominate the emission from the peripheral wells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730769]

Non-Dominated Sorting Genetic Algorithm Based on Reinforcement Learning to Optimization of Broad-Band Reflector Antennas Satellite

This paper aims to provide an improved NSGA-II (Non-Dominated Sorting Genetic Algorithm-version II) which incorporates a parameter-free self-tuning approach by reinforcement learning technique, called Non-Dominated Sorting Genetic Algorithm Based on Reinforcement Learning (NSGA-RL). The proposed method is particularly compared with the classical NSGA-II when applied to a satellite coverage problem. Furthermore, not only the optimization results are compared with results obtained by other multiobjective optimization methods, but also guarantee the advantage of no time-spending and complex parameter tuning.

GaMnAs: Position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations

Among all magnetic semiconductors, GaMnAs seems to be the most important one. In this work, we present accurate first-principles calculations of GaMnAs within the GGA-1/2 approach: We concentrate our efforts in obtaining the position of the peak of Mn-d levels in the valence band and also the majority spin band gap. For the position of the Mn-d peak, we find a value of 3.3 eV below the Fermi level, in good agreement with the most recent experimental results of 3.5 and 3.7 eV. An analytical expression that fits the calculated E-g(x) for majority spin is derived in order to provide ready access to the band gap for the composition range from 0 to 0.25. We found a value of 3.9 eV for the gap bowing parameter. The results agree well with the most recent experimental data. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718602]

Polarimetric X-band weather radar measurements in the tropics: radome and rain attenuation correction

A polarimetric X-band radar has been deployed during one month (April 2011) for a field campaign in Fortaleza, Brazil, together with three additional laser disdrometers. The disdrometers are capable of measuring the raindrop size distributions (DSDs), hence making it possible to forward-model theoretical polarimetric X-band radar observables at the point where the instruments are located. This setup allows to thoroughly test the accuracy of the X-band radar measurements as well as the algorithms that are used to correct the radar data for radome and rain attenuation. For the campaign in Fortaleza it was found that radome attenuation dominantly affects the measurements. With an algorithm that is based on the self-consistency of the polarimetric observables, the radome induced reflectivity offset was estimated. Offset corrected measurements were then further corrected for rain attenuation with two different schemes. The performance of the post-processing steps was analyzed by comparing the data with disdrometer-inferred polarimetric variables that were measured at a distance of 20 km from the radar. Radome attenuation reached values up to 14 dB which was found to be consistent with an empirical radome attenuation vs. rain intensity relation that was previously developed for the same radar type. In contrast to previous work, our results suggest that radome attenuation should be estimated individually for every view direction of the radar in order to obtain homogenous reflectivity fields.

Study of singlet excited state absorption spectrum of lutetium bisphthalocyanine using the femtosecond Z-scan technique

In this study we investigate the singlet excited state absorption of lutetium bisphthalocyanine (LuPc2) over a wide spectral range. It was observed distinct nonlinear absorption behaviors; saturable (SA) and reverse saturable absorption (RSA). The RSA effect was observed below 640 and above 680 nm, while SA occurs around the Q-band region, located around 660 nm. To describe the main singlet-singlet transitions, we employed the rate equation model considering the simplified three-energy level diagram. Our results reveal a ratio between excited and ground state absorption smaller than 0.05 at the Q-band region, and of approximately 4 for the other regions. (C) 2012 Elsevier B.V. All rights reserved.

Type Ia Supernovae : Homogeneity and Diversity

The use of type Ia supernovae as distance estimators has shown that about 75% of the energy content of the universe has a negative equation of state parameter and thus, drives the acceleration of the universe. Constraining the exact nature of this energy is one of the main goals in cosmology. As the statistics of observed high-redshift supernovae increases, systematic effects become the limiting factor to pursue such investigations, thus deeper understanding of the physical properties of SNe is of great importance. In this thesis we investigate spectral homogeneity and diversity of local and high redshift supernovae. Special emphasis has been given to the analysis of optical spectra of local peculiar supernovae 1999aa and 1999ac. The study of the spectra of SN 1999aa pointed out that this SN could be a link between the extreme peculiar SN 1991T and normal SNe. Moreover, the identification of a high velocity component of Ca II and possibly of a low velocity component of C III suggests some degree of asphericity in the ejecta of this supernova. Evidence for a deflagration of a C+O white dwarf was found in the early spectra of SN 1999ac. The spectral proprieties of a vast sample of local SNe are also studied by means of newly introduced spectral indicators. These were used to possibly improve the intrinsic spread of SN peak magnitudes to 0.15 mag, independently of light curve parameters. The first quantitative comparison between local and high redshift supernova is carried out. No evidence for extreme peculiar sub-luminous SNe was found in our data set including 13 SNe with redshift range z=0.279-0.912. Furthermore, SN2002fd (z=0.279) was found to show spectral characteristics similar to SN 1991T/SN 1999aa-like supernovae. We also present a feasibility study of the Hubble diagram in rest frame I-band up to z~0.5, and show the possibility to probe the presence of intergalactic dust, which could possibly mimic the effect of dark energy in the Hubble diagram.

Diseño de un amplificador distribuido para ultra wide band basado en HBT de la tecnología SIGE 0.35 μm de AMS

Memoria y presentación del Proyecto Fin de Carrera titulado "DISEÑO DE UN AMPLIFICADOR DISTRIBUIDO PARA ULTRA WIDE BAND BASADO EN HBT DE LA TECNOLOGÍA SIGE 0.35 μm DE AMS"

Design of radio frequency integrated circuits for ultra wide band communications

Programa de doctorado: Tecnologías de Telecomunicación Avanzadas

Spectrum shaping and its application: spread-spectrum clock generator and circuits for ultra wide band

Electromagnetic spectrum can be identified as a resource for the designer, as well as for the manufacturer, from two complementary points of view: first, because it is a good in great demand by many different kind of applications; second, because despite its scarce availability, it may be advantageous to use more spectrum than necessary. This is the case of Spread-Spectrum Systems, those systems in which the transmitted signal is spread over a wide frequency band, much wider, in fact, than the minimum bandwidth required to transmit the information being sent. Part I of this dissertation deals with Spread-Spectrum Clock Generators (SSCG) aiming at reducing Electro Magnetic Interference (EMI) of clock signals in integrated circuits (IC) design. In particular, the modulation of the clock and the consequent spreading of its spectrum are obtained through a random modulating signal outputted by a chaotic map, i.e. a discrete-time dynamical system showing chaotic behavior. The advantages offered by this kind of modulation are highlighted. Three different prototypes of chaos-based SSCG are presented in all their aspects: design, simulation, and post-fabrication measurements. The third one, operating at a frequency equal to 3GHz, aims at being applied to Serial ATA, standard de facto for fast data transmission to and from Hard Disk Drives. The most extreme example of spread-spectrum signalling is the emerging ultra-wideband (UWB) technology, which proposes the use of large sections of the radio spectrum at low amplitudes to transmit high-bandwidth digital data. In part II of the dissertation, two UWB applications are presented, both dealing with the advantages as well as with the challenges of a wide-band system, namely: a chaos-based sequence generation method for reducing Multiple Access Interference (MAI) in Direct Sequence UWB Wireless-Sensor-Networks (WSNs), and design and simulations of a Low-Noise Amplifier (LNA) for impulse radio UWB. This latter topic was studied during a study-abroad period in collaboration with Delft University of Technology, Delft, Netherlands.

Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

In-situ-Hochtemperatur-Mössbauer-Spektroskopie und Bandstruktur-Rechnungen an Eisennitriden und gemischtvalenten Verbindungen

Zusammenfassung

Die stöchiometrischen Eisennitride g'-Fe₄N, e-Fe₃N und z-Fe₂N sind durchRöntgen- und Neutronenstreuung gut charakterisiert. Allerdings weist das Fe/N-Phasendiagramm noch vieleungeklärte Stellen auf. So konnten im Bereich von alpha-Fe bis g'-Fe₄N noch keine weiterenNitride isoliert werden. Die Verbindung a''-Fe₁₆N₂ konntenoch nicht rein darzustellen werden.

Besonderes Interesse besteht in der Aufklärung desMechanismus der Entstehung der Eisennitride bei derUmsetzung von a-Eisen mitAmmoniak. Diese Reaktion wird großtechnisch zurNitridierhärtung von Eisenwerkstücken genutzt.

Als Messmethode wurde die⁵⁷Fe-Mößbauer-Spektroskopiegewählt, die auf Kernspinübergängen von⁵⁷Fe beruht. Um in situ-Nitridierungen von Eisenproben mit Ammoniak mitder ⁵⁷Fe-Mößbauer-Spektroskopieverfolgen zu können, wurde eineHochtemperatur-Messzelle entwickelt, die es erlaubt,Messungen bis 1100 K durchzuführen. Die Messzelle wurde durch Messungen an Eisennitriden mitbekannter Stöchiometrie, wie z.B. g'-Fe₄N und e-Fe₃N, durchgeführt.

Neben ⁵⁷Fe-Mößbauer-Messungen wurdenim Rahmen des DFG-Schwerpunkt-Programms Reaktivitätin Festkörpern weitere Messungen (u.a.Hochtemperatur-Leitfähigkeitsmessungen)durchgeführt.

Die experimentellen Methoden wurden durchBandstruktur-Rechnungen ergänzt. Mit Hilfe der TB-LMTO-ASA-Methode erfolgten Rechnungen anÜbergangsmetallnitriden M₃N (M = Mn, Fe, Co,Ni, Cu) der 3d-Reihe. Hierbei konnte der experimentell bestimmte strukturelleÜbergang von hexagonalem Ni₃N zu kubischemCu₃N bestätigt werden.